会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 51. 发明授权
    • Silicon device
    • 硅器件
    • US06759591B2
    • 2004-07-06
    • US10343963
    • 2003-02-06
    • Yukihisa YoshidaMunehito KumagaiKazuhiko Tsutsumi
    • Yukihisa YoshidaMunehito KumagaiKazuhiko Tsutsumi
    • H01L2302
    • G01C19/5755G01P1/023G01P15/0802G01P15/125G01P2015/0814Y10T428/24612
    • A silicon device includes an insulating substrate having a recess on the surface of the substrate, and a beam-like structure made of silicon on the front surface of the insulating substrate, surrounds the recess. The beam-like structure includes at least one functional section having a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The silicon device also includes a frame made of silicon surrounding and spaced from the beam-like structure and on the insulating substrate. The silicon device also includes a conductive film having electrical continuity with the frame and on the surface of the insulating substrate, at least in a portion directly opposite the cantilever. The conductive film prevents the insulating substrate from being charged, thereby significantly suppressing damage of the beam-like structure during dry etching.
    • 硅器件包括在衬底的表面上具有凹陷的绝缘衬底和在绝缘衬底的前表面上由硅制成的梁状结构,围绕凹部。 束状结构包括至少一个功能部分,其具有结合到绝缘基板的支撑部分和至少一个与支撑部分一体并延伸穿过凹部的悬臂。 硅器件还包括围绕并与波束状结构隔开并在绝缘基片上的由硅制成的框架。 硅器件还包括与框架电连续并且在绝缘衬底的表面上至少在直接与悬臂相对的部分中的导电膜。 导电膜防止绝缘基板被充电,从而显着地抑制干蚀刻期间的束状结构的损坏。
    • 52. 发明授权
    • Pressure sensor
    • 压力传感器
    • US06619130B1
    • 2003-09-16
    • US10148809
    • 2002-06-05
    • Naoki YutaniHiroshi OhjiKazuhiko Tsutsumi
    • Naoki YutaniHiroshi OhjiKazuhiko Tsutsumi
    • G01L1302
    • G01L11/002
    • A pressure sensor includes a first diaphragm having a first surface receiving pressure, a first thermal detection section located opposite a central section of the first diaphragm, and a second thermal detection section having little displacement by pressure, and located opposite the first diaphragm The pressure sensor amplifies and outputs a difference between the first thermal detection section for pressure measurement and the second thermal detection section for reference output. Since the diaphragm to which the second thermal detection section is opposed is equal in thickness to the diaphragm to which the first thermal detection section is opposed, pressure can be accurately measured relative to a sudden change in atmospheric temperature.
    • 压力传感器包括具有第一表面接收压力的第一隔膜,与第一隔膜的中心部分相对的第一热检测部分和具有几乎没有压力位移并且位于第一隔膜相对的第二热检测部分。压力传感器 放大并输出用于压力测量的第一热检测部和用于参考输出的第二热检测部之间的差。 由于第二热检测部相对的隔膜的厚度与第一热检测部相对的隔膜的厚度相等,因此能够相对于大气温度的突然变化来精确地测量压力。
    • 53. 发明授权
    • Microdevice and its production method
    • 微设备及其生产方法
    • US06528724B1
    • 2003-03-04
    • US09889424
    • 2001-10-19
    • Yukihisa YoshidaMartial ChablozJiwei JiaoTsukasa MatsuuraKazuhiko Tsutsumi
    • Yukihisa YoshidaMartial ChablozJiwei JiaoTsukasa MatsuuraKazuhiko Tsutsumi
    • H01L2302
    • G01P15/125B81B2201/0228B81B2203/0136B81C1/0015B81C1/00579G01P1/023G01P15/0802G01P2015/0814Y10T29/49002Y10T29/49117
    • A micro device including an insulating substrate having a recess formed on a surface, and a beam-like silicon structure on the front surface of the insulating substrate surrounding the recess. The beam-like structure includes at least one functional section, and the functional section has a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The micro device also has an electrically conductive film electrically connected to the supporting section, on the surface of the recess at least directly under a cantilever. The electrically conductive film prevents the surface of the recess from being positively charged in the dry etching process. Thus, an etching gas having a positive charge is not subjected to electrical repulsion from the recess and does not impinge on the back surface of the silicon substrate, and therefore erosion of the cantilever does not occur. As a result, since the beam-like structure is formed with high accuracy in shape and dimensions, the micro device has improved reliability and an improved degree of freedom in design.
    • 一种微型器件,包括具有形成在表面上的凹部的绝缘基板和围绕凹部的绝缘基板的前表面上的梁状硅结构。 梁状结构包括至少一个功能部分,并且功能部分具有结合到绝缘基板的支撑部分和与支撑部分一体并延伸穿过凹部的至少一个悬臂。 微型装置还具有导电膜,该导电膜电连接到支撑部分,至少在悬臂下方的凹部的表面上。 在干蚀刻工艺中,导电膜防止凹部的表面带正电。 因此,具有正电荷的蚀刻气体不会受到来自凹部的电斥力,并且不会撞击到硅衬底的背面,因此不会发生悬臂的侵蚀。 结果,由于在形状和尺寸方面形成了高度精确的束状结构,所以微型器件具有提高的可靠性和改进的设计自由度。
    • 59. 发明授权
    • Phosphonic diester derivatives
    • 膦酸二酯衍生物
    • US5527786A
    • 1996-06-18
    • US424345
    • 1995-04-19
    • Kazuyoshi MiyataYasuhisa KurogiYoshihiko TsudaKazuhiko TsutsumiTakeshi IwamotoChieko Naba
    • Kazuyoshi MiyataYasuhisa KurogiYoshihiko TsudaKazuhiko TsutsumiTakeshi IwamotoChieko Naba
    • C07F9/655A61K31/675A61K31/665C07F9/28
    • C07F9/65522
    • The present invention provides a phosphonic diester derivative of the formula: ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 are the same or different and they each represent a hydrogen atom, a lower alkyl group, a halogen atom, a cyano group, a hydroxyl group, or a lower alkoxy group optionally having a halogen atom, a phenyl group or a hydroxypiperidino group as a substituent; R.sup.4 represents a hydrogen atom, a lower alkoxy group, a halogen atom, or a lower alkyl group optionally having a halogen atom or a cyano group as a substituent; and R.sup.5 and R.sup.6 are the same or different and they each represent a hydrogen atom or a lower alkyl group.The derivative of the present invention has excellent hypolipidemic, vasodepressor and hypoglycemic activities and is useful as therapeutic and preventive agents for hyperlipidemic diseases, hypertension and diabetes.
    • PCT No.PCT / JP94 / 01307 Sec。 371日期1995年04月19日 102(e)1995年4月19日PCT PCT 1994年8月8日PCT公布。 出版物WO95 / 06051 日本3月2日公开本发明提供下式的膦酸二酯衍生物:其中R 1,R 2和R 3相同或不同,它们各自表示氢原子,低级烷基,卤素原子, 氰基,羟基或任选具有卤素原子的低级烷氧基,苯基或羟基哌啶子基作为取代基; R4表示氢原子,低级烷氧基,卤素原子或任选具有卤素原子或氰基作为取代基的低级烷基; R 5和R 6相同或不同,它们各自表示氢原子或低级烷基。 本发明的衍生物具有优异的降血脂,血管抑制剂和降血糖活性,可用作高脂血症和高血压病和糖尿病的治疗和预防剂。