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51. 发明授权

US07145198B2 Compositions for thin-film capacitance device, high-dielectric constant insulating film, thin-film capacitance device, and thin-film multilayer capacitor 有权
标题翻译：薄膜电容器件，高介电常数绝缘膜，薄膜电容器件和薄膜多层电容器的组成
公开(公告)号：US07145198B2
公开(公告)日：2006-12-05
申请号：US10487782
申请日：2002-08-26
申请人： Yukio Sakashita , Hiroshi Funakubo
发明人： Yukio Sakashita , Hiroshi Funakubo
IPC分类号： H01L27/108
CPC分类号： H01L27/0805 , C04B35/475 , C04B2235/3213 , C04B2235/3251 , C04B2235/787 , C04B2235/963 , H01G4/10 , H01G4/30 , H01L21/31691 , H01L28/55
摘要： A thin-film capacitor(2) in which a lower electrode(6), a dielectric thin-film(8), and an upper electrode(10) are formed in order on a substrate(4). The dielectric thin-film(8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is oriented vertically to the substrate surface and which is expressed by a formula: (Bi2O2)2+(Am−1BmO3m+1)2−, or Bi2Am−1BmO3m+3 wherein “m” is an odd number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta Sb, V, Mo and W. Even if the dielectric thin-film is made more thinner, the dielectric constant is relatively high, and the loss is small. The leak characteristics are excellent, the temperature characteristics of the dielectric constant are excellent, the break-down voltage is improved and the surface smoothness is excellent.
摘要翻译：在基板（4）上依次形成下电极（6），电介质薄膜（8）和上电极（10）的薄膜电容器（2）。电介质薄膜（8）由用于薄膜电容器件的组合物制成。该组合物包括铋层结构化合物，其c轴垂直于衬底表面取向，并由下式表示：（Bi 2 O 2 O 2） > 2 + （A m-1 3 3m + 1）或者其中“m”是奇数，或者其中“m”是奇数， “A”是选自Na，K，Pb，Ba，Sr，Ca和Bi中的至少一种元素，“B”是选自Fe，Co，Cr，Ga，Ti，Nb，Ta Sb， V，Mo和W.即使电介质薄膜更薄，介电常数也相对较高，损耗小。泄漏特性优异，介电常数的温度特性优异，分解电压提高，表面平滑性优异。

52. 发明申请

US20050168112A1 Dielectric element, piezoelectric element, ink jet head and method for producing the same head 有权
标题翻译：电介质元件，压电元件，喷墨头及其制造方法
公开(公告)号：US20050168112A1
公开(公告)日：2005-08-04
申请号：US11024961
申请日：2004-12-30
申请人： Katsumi Aoki , Kenichi Takeda , Tetsuro Fukui , Hiroshi Funakubo , Shoji Okamoto , Goji Asano
发明人： Katsumi Aoki , Kenichi Takeda , Tetsuro Fukui , Hiroshi Funakubo , Shoji Okamoto , Goji Asano
IPC分类号： B41J2/01 , B41J2/045 , B41J2/14 , H01L41/047 , H01L41/09 , H01L41/316 , H01L41/319 , H01L41/187
CPC分类号： B41J2/14233 , B41J2202/03 , H01L41/0477 , H01L41/0973 , H01L41/1876 , H01L41/316 , H01L41/319
摘要： To provide a dielectric layer of crystal structure preferentially or uniaxially oriented on a common substrate. A dielectric element of desired quality can be stably produced even on a common substrate for film-making by forming a lower electrode layer, dielectric layer and upper electrode layer in this order on a substrate, wherein each of these layers are designed to be preferentially or uniaxially oriented, and to have a specific half bandwidth, determined by fitting a pseudo-Voigt function.
摘要翻译：提供在公共基板上优先或单向取向的晶体结构的介电层。通过在基板上依次形成下电极层，电介质层和上电极层，即使在通常的薄膜制造用基板上也可以稳定地制造所需品质的电介质元件，其中，各层被设计为优选地通过拟合伪Voigt函数确定具有特定的半带宽。

53. 发明授权

US08114307B2 Piezoelectric body and liquid discharge head 有权
标题翻译：压电体和排液头
公开(公告)号：US08114307B2
公开(公告)日：2012-02-14
申请号：US11849871
申请日：2007-09-04
申请人： Katsumi Aoki , Kenichi Takeda , Tetsuro Fukui , Hiroshi Funakubo , Shintaro Yasui , Ken Nishida
发明人： Katsumi Aoki , Kenichi Takeda , Tetsuro Fukui , Hiroshi Funakubo , Shintaro Yasui , Ken Nishida
IPC分类号： C04B35/495 , C04B35/00 , C01G51/04 , C01G29/00 , H01L41/00 , B41J2/045
CPC分类号： B41J2/14233 , B41J2202/03 , C01G29/00 , C01G37/033 , C01G49/009 , C01G51/006 , C01G51/40 , C01P2002/34 , C01P2002/76 , C01P2004/80 , C01P2006/40 , H01L41/0815 , H01L41/1878 , H01L41/316
摘要： The present invention provides a piezoelectric element and having a piezoelectric body and a pair of electrodes being contact with the piezoelectric body, wherein the piezoelectric body consists of an ABO3 perovskite oxide in which an A-site atom consists of Bi and a B-site atom is composed of an atom of at least two types of elements.
摘要翻译：本发明提供一种压电元件，具有压电体和与压电体接触的一对电极，其中压电体由ABO 3钙钛矿氧化物组成，其中A位原子由Bi和B位原子组成由至少两种元素的原子组成。

54. 发明授权

US07948154B2 Piezoelectric substance, piezoelectric element, and liquid discharge head and liquid discharge apparatus using piezoelectric element 有权
标题翻译：压电体，压电元件，液体排出头以及使用压电元件的液体排出装置
公开(公告)号：US07948154B2
公开(公告)日：2011-05-24
申请号：US12301567
申请日：2007-07-13
申请人： Toshihiro Ifuku , Kenichi Takeda , Tetsuro Fukui , Hiroshi Funakubo
发明人： Toshihiro Ifuku , Kenichi Takeda , Tetsuro Fukui , Hiroshi Funakubo
IPC分类号： H01L41/187
CPC分类号： B41J2/161 , B41J2/1646 , B41J2202/03 , H01L41/0805 , H01L41/0973 , H01L41/1875 , H01L41/316
摘要： A piezoelectric substance which is made of oxide with perovskite type structure which is made of ABO3, where a principal component of A is Pb, and principal components of B contain at least two kinds of elements among Nb, Mg, Zn, Sc, Cd, Ni, Mn, Co, Yb, In, and Fe, and Ti, characterized by being a uniaxial orientation crystal or a single crystal which has an a-domain and a c-domain of tetragonal.
摘要翻译：由ABO3制成的具有钙钛矿型结构的氧化物的压电体，其中A的主成分为Pb，B的主要成分含有Nb，Mg，Zn，Sc，Cd中的至少两种元素， Ni，Mn，Co，Yb，In和Fe以及Ti，其特征在于单轴取向晶体或单晶，其具有四方晶的a畴和c畴。

55. 发明申请

US20090026408A1 PIEZOELECTRIC MATERIAL 有权
标题翻译：压电材料
公开(公告)号：US20090026408A1
公开(公告)日：2009-01-29
申请号：US12135980
申请日：2008-06-09
申请人： Kaoru Miura , Toshihiro Ifuku , Kenichi Takeda , Tetsuro Fukui , Hiroshi Funakubo
发明人： Kaoru Miura , Toshihiro Ifuku , Kenichi Takeda , Tetsuro Fukui , Hiroshi Funakubo
IPC分类号： H01L41/187
CPC分类号： H01L41/1871 , H01L41/43
摘要： The present invention provides a piezoelectric material which can be applied even to the MEMS technique, exhibits satisfactory piezoelectricity even at high ambient temperatures and is environmentally clean, namely, a piezoelectric material including an oxide obtained by forming a solid solution composed of two perovskite oxides A(1)B(1)O3 and A(2)B(2)O3 different from each other in crystalline phase, the oxide being represented by the following general formula (1): X{A(1)B(1)O3}−(1−X){A(2)B(2)O3} (1) wherein “A(1)” and “A(2)” are each an element including an alkali earth metal and may be the same or different from each other; “B(1)” and “B(2)” each include two or more metal elements, and either one of “B(1)” and “B(2)” contains Cu in a content of 3 atm % or more; and “X” satisfies the relation 0
摘要翻译：本发明提供一种甚至可以应用于MEMS技术的压电材料，即使在高环境温度下也表现出令人满意的压电性，并且是环境清洁的，即包括通过形成由两种钙钛矿氧化物A形成的固溶体获得的氧化物的压电材料（1）在结晶相中彼此不同的B（1）O 3和A（2）B（2）O 3，所述氧化物由以下通式（1）表示：<？in-line-formula description =“In （1）B（1）O3} - （1-X）{A（2）B（2）O3}（1）<？在线公式 description =“In-line Formulas”end =“tail”？>其中“A（1）”和“A（2）”分别是包含碱土金属的元素，可以相同或不同; “B（1）”和“B（2）”各自包含两个或更多个金属元素，“B（1）”和“B（2）”中的任一个含有3atm％以上的Cu; 和“X”满足0

56. 发明申请

US20070241379A1 Compositions for thin-film capacitance device, high-dielectric constant insulating film, thin-film capacitance device and thin-film multilayer capacitor 审中-公开
标题翻译：薄膜电容器件，高介电常数绝缘膜，薄膜电容器件和薄膜多层电容器的组成
公开(公告)号：US20070241379A1
公开(公告)日：2007-10-18
申请号：US11808407
申请日：2007-06-08
申请人： Yukio Sakashita , Hiroshi Funakubo
发明人： Yukio Sakashita , Hiroshi Funakubo
IPC分类号： H01L29/76
CPC分类号： H01L21/02194 , B32B18/00 , C04B35/01 , C04B35/475 , C04B2235/3201 , C04B2235/3208 , C04B2235/3213 , C04B2235/3227 , C04B2235/3289 , C04B2235/963 , H01G4/10 , H01G4/1209 , H01G4/1272 , H01G4/33 , H01L21/02197 , H01L21/02205 , H01L21/02266 , H01L21/02271 , H01L21/31691 , H01L28/55
摘要： A thin-film capacitor (2) in which a lower electrode (6), a dielectric thin-film (8), and an upper electrode (10) are formed in order on a substrate (4). The dielectric thin-film (8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is oriented vertically to the substrate and which is expressed by a formula: (Bi2O2)2+(Am−1BmO3m+1)2−, or Bi2Am−1BmO3m+3 wherein “m” is an even number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta Sb, V, Mo and W. The temperature characteristics of the dielectric constant are excellent. Even if the dielectric thin-film is made more thinner, the dielectric constant is relatively high, and the loss is small. The leak characteristics are excellent, the break-down voltage is improved and the surface smoothness is excellent.
摘要翻译：在基板（4）上依次形成下电极（6），电介质薄膜（8）和上电极（10）的薄膜电容器（2）。电介质薄膜（8）由用于薄膜电容器件的组合物制成。该组合物包括铋层结构化合物，其c轴垂直于衬底取向，并由下式表示：（Bi 2 O 2 O 2） 2 +（A m-1）B m O 3 m + 1 + 2 - 或 - 其中“m”是偶数，“m”是3，其中“m”是偶数，“m” A“是选自Na，K，Pb，Ba，Sr，Ca和Bi中的至少一种元素，”B“是选自Fe，Co，Cr，Ga，Ti，Nb，Ta Sb，V ，Mo和W.介电常数的温度特性优异。即使使电介质薄膜更薄，介电常数也相对较高，损耗小。泄漏特性优异，分解电压提高，表面平滑性优异。

57. 发明授权

US07265483B2 Dielectric member, piezoelectric member, ink jet head, ink jet recording apparatus and producing method for ink jet recording apparatus 有权
标题翻译：电介质构件，压电构件，喷墨头，喷墨记录装置和喷墨记录装置的制造方法
公开(公告)号：US07265483B2
公开(公告)日：2007-09-04
申请号：US11085091
申请日：2005-03-22
申请人： Kenichi Takeda , Toshihiro Ifuku , Tetsuro Fukui , Hiroshi Funakubo , Shoji Okamoto
发明人： Kenichi Takeda , Toshihiro Ifuku , Tetsuro Fukui , Hiroshi Funakubo , Shoji Okamoto
IPC分类号： H01L41/047
CPC分类号： H01L41/0478 , H01L41/0973 , H01L41/1876 , H01L41/29 , H01L41/316
摘要： A dielectric member including, on a substrate, a lower electrode, an oriented dielectric layer, and an upper electrode, in which at least either of the electrodes has an at least two-layered structure constituted of perovskite type oxide conductive layers, and has an orientation.
摘要翻译：一种电介质构件，在基板上包括下电极，取向介质层和上电极，其中至少任一个电极具有由钙钛矿型氧化物导电层构成的至少两层结构，并且具有方向。

58. 发明授权

US06773750B2 Chemical vapor deposition method and related material 失效
标题翻译：化学气相沉积法及相关材料
公开(公告)号：US06773750B2
公开(公告)日：2004-08-10
申请号：US10422983
申请日：2003-04-25
申请人： Hiroshi Funakubo , Yasushi Murakami , Hideaki Machida
发明人： Hiroshi Funakubo , Yasushi Murakami , Hideaki Machida
IPC分类号： C23C1600
CPC分类号： C23C16/45523 , C23C16/18 , C23C16/40 , Y10T428/31678
摘要： A process for chemical vapor deposition includes depositing a film using a metal &bgr;-diketonate complex and an &agr;, &bgr;-unsaturated alcohol. The metal &bgr;-diketonate complex and the &agr;, &bgr;-unsaturated alcohol is contacted on the substrate at the same time, at different times or alternately.
摘要翻译：用于化学气相沉积的方法包括使用金属β-二酮络合物和α，β-不饱和醇沉积膜。金属β-二酮络合物和α，β-不饱和醇在不同时间或交替的同时在基材上接触。

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