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51. 发明申请

US20120240390A1 METHOD OF MANUFACTURING A MAGNETIC HEAD INCLUDING SHIELD LAYERS WHICH SURROUND A MR ELEMENT 有权
标题翻译：制造磁头的方法，其中包括围绕MR元件的屏蔽层
公开(公告)号：US20120240390A1
公开(公告)日：2012-09-27
申请号：US13052674
申请日：2011-03-21
申请人： Naomichi Degawa , Takumi Yanagisawa , Satoshi Miura , Yoshikazu Sawada , Takahiko Machita , Kenzo Makino , Takekazu Yamane , Shohei Kawasaki
发明人： Naomichi Degawa , Takumi Yanagisawa , Satoshi Miura , Yoshikazu Sawada , Takahiko Machita , Kenzo Makino , Takekazu Yamane , Shohei Kawasaki
IPC分类号： G11B5/127
CPC分类号： G11B5/3912 , G01R33/093 , G11B5/3163 , G11B5/398 , H01L43/12 , Y10T29/49021 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method of manufacturing a magnetic head that includes a magneto resistance effect (MR) element of which an electrical resistance changes according to an external magnetic field and shield layers surrounding the MR element, and that reads information of a magnetic recording medium is provided. The manufacturing method includes: a first step of forming a multilayer film including a plurality of layers configuring the MR element on a first shield layer; a second step of removing unnecessary portions of the multilayer film positioned on both sides so as to configure the MR element; a third step of forming an insulating layer on a surface exposed by removing the unnecessary portions; a fourth step of forming a soft magnetic layer covering the MR element in an integrated manner at once on both sides of the MR element and on the MR element so as to configure a second shield layer including the soft magnetic layer; and a fifth step of forming an anisotropy application layer on the second shield layer, the anisotropy application layer providing exchange anisotropy to the soft magnetic layer so as to magnetize the soft magnetic layer in a predetermined direction.
摘要翻译：提供一种制造磁头的方法，该磁头包括根据外部磁场电阻变化的磁阻效应（MR）元件和围绕MR元件的屏蔽层，并且读取磁记录介质的信息。该制造方法包括：第一步骤，在第一屏蔽层上形成包括构成MR元件的多个层的多层膜; 去除位于两侧的多层膜的不需要部分以构成MR元件的第二步骤; 第三步骤，通过去除不需要的部分在暴露的表面上形成绝缘层; 在MR元件和MR元件的两侧上一体地形成覆盖MR元件的软磁性层的第四步骤，以构成包括该软磁性层的第二屏蔽层; 以及在所述第二屏蔽层上形成各向异性施加层的第五步骤，所述各向异性施加层向所述软磁性层提供交换各向异性，以沿预定方向磁化所述软磁性层。

52. 发明授权

US08214537B2 Domain name system using dynamic DNS and global address management method for dynamic DNS server 有权
标题翻译：使用动态DNS的域名系统和动态DNS服务器的全局地址管理方法
公开(公告)号：US08214537B2
公开(公告)日：2012-07-03
申请号：US12162709
申请日：2007-01-30
申请人： Satoshi Miura
发明人： Satoshi Miura
IPC分类号： G06F15/16 , G06F15/173 , H04L12/28
CPC分类号： H04L61/2076 , H04L29/12066 , H04L29/12301 , H04L61/1511
摘要： In order to constitute a domain name system obtained by providing and utilizing a DNS service by using a self-supporting (not rented) DDNS server in a dynamic IP address environment, a DDNS server inside a network of a central site and routers which are DDNS clients inside networks of other sites are provided. The DDNS server includes: a means for registering a relationship between domain names of the DDNS clients and global addresses of the DDNS client; a means for responding to a request for resolving a name from the DDNS client; and a means which, at a time when a global address of the DDNS server is updated, notifies DDNS server information including the global address of the DDNS server to the DDNS client. Moreover, the DDNS client includes: a means for registering (updating) the global address of the DDNS server when the DDNS server information is notified; and a means for issuing a request for resolving a name to the DDNS server.
摘要翻译：为了构成通过在动态IP地址环境中使用自支持（未租用）DDNS服务器提供和利用DNS服务获得的域名系统，中心站点的网络内的DDNS服务器和DDNS的路由器提供其他站点网络内的客户端。 DDNS服务器包括：登录DDNS客户端的域名与DDNS客户端的全球地址之间的关系的装置; 一种响应DDNS客户端解析名称的请求的方法; 并且在DDNS服务器的全局地址被更新的时候向DDNS客户端通知DDNS服务器信息，包括DDNS服务器的全局地址。此外，DDNS客户端包括：当通知DDNS服务器信息时，用于注册（更新）DDNS服务器的全局地址的装置; 以及向DDNS服务器发出解析名称的请求的方法。

53. 发明授权

US08023214B2 Rework method and apparatus of magnetic record medium, information 有权
标题翻译：磁记录介质信息的返工方法和装置
公开(公告)号：US08023214B2
公开(公告)日：2011-09-20
申请号：US12585259
申请日：2009-09-10
申请人： Takumi Yanagisawa , Satoshi Miura
发明人： Takumi Yanagisawa , Satoshi Miura
IPC分类号： G11B27/36
CPC分类号： G11B20/10009 , G11B5/012 , G11B20/10083 , G11B2005/0002 , G11B2220/2516
摘要： A reproducing method of reproducing magnetic information written in each of bits of a recording medium using a magnetic head having a reading element configured to measure external magnetic field intensity includes moving, measuring and specifying steps. In the moving step, the magnetic head moves to a position where the reading element covers two bits, one bit having known magnetic information, the other bit being adjacent to the one bit and having unknown magnetic information. In the measuring step, the reading element measures magnetic field intensity coming from the recording medium. In the specifying step, magnetic information of the bit having the unknown magnetic information is specified based on the magnetic field intensity measured in the measuring step and magnetic information of the bit having the known magnetic information.
摘要翻译：使用具有用于测量外部磁场强度的读取元件的磁头来再现记录在记录介质的每个比特中的磁信息的再现方法包括移动，测量和指定步骤。在移动步骤中，磁头移动到读取元件覆盖两位的位置，一位具有已知的磁信息，另一位与该位相邻并具有未知的磁信息。在测量步骤中，读取元件测量来自记录介质的磁场强度。在指定步骤中，基于在测量步骤中测量的磁场强度和具有已知磁信息的位的磁信息来指定具有未知磁信息的位的磁信息。

54. 发明授权

US07692454B2 Signal converting circuit 有权
标题翻译：信号转换电路
公开(公告)号：US07692454B2
公开(公告)日：2010-04-06
申请号：US11910068
申请日：2006-05-17
申请人： Satoshi Miura , Makoto Masuda
发明人： Satoshi Miura , Makoto Masuda
IPC分类号： H03K5/22
CPC分类号： H03F3/45183 , H03F1/223 , H03F3/345 , H03F3/45475 , H03F3/505 , H03F2203/45288 , H03F2203/45352 , H03F2203/45612 , H03F2203/45652 , H03F2203/45702 , H03K17/04106
摘要： A signal conversion circuit 2 comprises a differential amplifier portion 10 and a source follower portion 20. When differential voltage signals INp and INn are input to a first input terminal 5 and second input terminal 6 respectively, operations occurs either in a mode in which only the differential amplifier portion 10 operates, or a mode in which both the differential amplifier portion 10 and the source follower portion 20 operate, or a mode in which only the source follower portion 20 operates, according to the levels of the differential voltage signals INp and INn. The differential amplifier portion 10 and source follower portion 20 have fewer components compared with a circuit comprising two differential amplifier circuits. By this means, the circuit area can be reduced, and in addition current consumption can be reduced. Also, because the source follower portion 20 performs non-inverting amplification of the differential voltage signals INp and INn, high-speed operation is possible.
摘要翻译：信号转换电路2包括差分放大器部分10和源极跟随器部分20.当差分电压信号INp和INn分别输入到第一输入端子5和第二输入端子6时，操作发生在只有差分放大器部分10或者差分放大器部分10和源极跟随器部分20工作的模式或仅源极跟随器部分20工作的模式，根据差分电压信号INp和INn的电平。与包括两个差分放大器电路的电路相比，差分放大器部分10和源极跟随器部分20具有较少的部件。通过这种方式，可以减少电路面积，并且可以减少电流消耗。此外，由于源极跟随器部分20执行差分电压信号INp和INn的非反相放大，因此可以进行高速操作。

55. 发明申请

US20090237839A1 CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT HAVING THREE MAGNETIC LAYERS 有权
标题翻译：具有三个磁性层的CPP型磁阻效应元件
公开(公告)号：US20090237839A1
公开(公告)日：2009-09-24
申请号：US12052633
申请日：2008-03-20
申请人： Kei Hirata , Satoshi Miura , Tomohito Mizuno , Takeo Kagami
发明人： Kei Hirata , Satoshi Miura , Tomohito Mizuno , Takeo Kagami
IPC分类号： G11B5/60 , G11B5/33
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01L43/08
摘要： A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first magnetic layer and the third magnetic layer; a first non-magnetic intermediate layer sandwiched between said first and second magnetic layers, said first non-magnetic intermediate layer allowing said first magnetic layer and said second magnetic layer to be exchange-coupled such that the magnetization directions thereof are anti-parallel to each other when no magnetic field is applied; and a second non-magnetic intermediate layer sandwiched between said second and third magnetic layers, said second non-magnetic intermediate layer producing a magnetoresistance effect between said second magnetic layer and said third magnetic layer; wherein sense current is adapted to flow in a direction perpendicular to a film plane; a bias magnetic layer provided on an opposite side of said magnetoresistive stack from an air bearing surface, said bias magnetic layer applying a bias magnetic field to said magnetoresistive stack in a direction perpendicular to the air bearing surface.
摘要翻译：磁阻效应元件包括：磁阻堆叠，其包括：其磁化方向根据外部磁场而变化的第一，第二和第三磁性层，所述第二磁性层位于所述第一磁性层和所述第三磁性层之间; 夹在所述第一和第二磁性层之间的第一非磁性中间层，所述第一非磁性中间层允许所述第一磁性层和所述第二磁性层交换耦合，使得其磁化方向与每个磁性层反平行另外当不施加磁场时; 以及夹在所述第二和第三磁性层之间的第二非磁性中间层，所述第二非磁性中间层在所述第二磁性层和所述第三磁性层之间产生磁阻效应; 其中感测电流适于在垂直于膜平面的方向上流动; 偏置磁性层，其设置在所述磁阻堆叠的与空气支承表面相反的一侧上，所述偏磁层在与所述空气轴承表面垂直的方向上向所述磁阻堆叠施加偏置磁场。

56. 发明申请

US20090165894A1 Methods of fabricating exchange-coupling film, magnetoresistive element, and thin-film magnetic head 有权
标题翻译：制造交换耦合膜，磁阻元件和薄膜磁头的方法
公开(公告)号：US20090165894A1
公开(公告)日：2009-07-02
申请号：US12003453
申请日：2007-12-26
申请人： Keita Kawamori , Satoshi Miura
发明人： Keita Kawamori , Satoshi Miura
IPC分类号： C21D1/04
CPC分类号： C21D1/04 , B82Y25/00 , B82Y40/00 , C21D9/0068 , G01R33/093 , G11B5/3163 , G11B5/3906 , H01F10/3295 , H01F41/304 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043
摘要： The method of fabricating an exchange-coupling film in accordance with the present invention comprises a multilayer body forming step of forming a multilayer body having an antiferromagnetic layer and a ferromagnetic layer laminated on the antiferromagnetic layer; and an annealing step of annealing the multilayer body in a magnetic field with a maximum temperature higher than a blocking temperature of the multilayer body by 15 to 60° C.
摘要翻译：根据本发明的制备交换耦合膜的方法包括：多层体形成步骤，其形成层叠在反铁磁层上的反铁磁层和铁磁层的多层体; 以及在多层体的最高温度高于多层体的阻挡温度15〜60℃的磁场中退火多层体的退火工序。

57. 发明授权

US07489481B2 CCP Head having leads of substantially the same size and shape and not intervening between a shield layer and a MR element 有权
标题翻译： CCP头部具有基本上相同尺寸和形状的引线，并且不插入屏蔽层和MR元件之间
公开(公告)号：US07489481B2
公开(公告)日：2009-02-10
申请号：US11067643
申请日：2005-02-28
申请人： Kentaro Nagai , Takeo Kagami , Noriaki Kasahara , Naoki Ohta , Satoshi Miura
发明人： Kentaro Nagai , Takeo Kagami , Noriaki Kasahara , Naoki Ohta , Satoshi Miura
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3912 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996
摘要： A magnetic head is provided for further improving a correlation between the dynamic characteristics and static characteristics. A lower magnetic shield layer, a magneto-resistive layer, and an upper magnetic shield layer are laminated on a base in this order. A lower lead layer and an upper lead layer apply a sense current to the magneto-resistive layer in a direction substantially perpendicular to the film plane thereof through the magnetic shield layers. The lower magnetic shield layer and upper magnetic shield layer have their shapes and sizes which substantially exactly overlap each other, when viewed in a laminating direction. The lower lead layer is electrically connected to the lower magnetic shield layer. At least a portion of the lower lead layer closer to the lower magnetic shield layer is made of a non-magnetic conductive material. The upper lead layer is electrically connected to the upper magnetic shield layer. At least a portion of the upper lead layer closer to the upper magnetic shield layer is made of a non-magnetic conductive material.
摘要翻译：提供磁头用于进一步改善动态特性和静态特性之间的相关性。下部磁屏蔽层，磁阻层和上部磁屏蔽层依次层压在基座上。下引线层和上引线层通过磁屏蔽层在大致垂直于其膜平面的方向上向磁阻层施加感测电流。当从层叠方向观察时，下磁屏蔽层和上磁屏蔽层具有基本精确地彼此重叠的形状和尺寸。下引线层电连接到下磁屏蔽层。下引线层的更靠近下磁屏蔽层的至少一部分由非磁性导电材料制成。上引线层电连接到上磁屏蔽层。上导电层的至少一部分靠近上磁屏蔽层由非磁性导电材料制成。

58. 发明申请

US20090033365A1 TRANSMITTING APPARATUS 有权
标题翻译：发送装置
公开(公告)号：US20090033365A1
公开(公告)日：2009-02-05
申请号：US11912800
申请日：2006-04-25
申请人： Satoshi Miura
发明人： Satoshi Miura
IPC分类号： H03K19/0175 , H03K3/00
CPC分类号： H04L25/0282 , H03K17/6872 , H04L25/0272
摘要： To provide a transmitting apparatus capable of suppressing the fluctuation of a common mode potential and performing high-speed, long-distance signal transmission. The transmitting apparatus has a main buffer circuit and a pre-emphasis buffer circuit 20. The pre-emphasis buffer circuit 20, which has a switch circuit 21, a first current source 22, and a second current source 23, uses the switch circuit 21 to output a current signal having the same direction as an output current of the main buffer circuit 10 during a certain time interval starting from a time point when the level of data to be transmitted changes, and brings the output terminals 201, 202 to a High-Z state during a time interval when the level is constant after a lapse of the abovementioned certain time interval. The output of the pre-emphasis buffer circuit 20 has no influence on the common mode potential of the output of the main buffer circuit but has influence only the amplitude of the current signal output to a differential transmission line. In this manner, the transmitting apparatus can suppress the fluctuation of the common mode potential and can perform high-speed, long-distance signal transmission.
摘要翻译：提供能够抑制共模电位波动并进行高速长距离信号传输的发送装置。发送装置具有主缓冲电路和预加重缓冲电路20.具有开关电路21，第一电流源22和第二电流源23的预加重缓冲电路20使用开关电路21 在从要发送的数据的电平改变的时间点开始的特定时间间隔期间输出具有与主缓冲电路10的输出电流相同方向的电流信号，并且使输出端子201,202变为高电平 -Z状态，在经过上述一定时间间隔后的电平恒定的时间间隔内。预加重缓冲器电路20的输出对主缓冲电路的输出的共模电位没有影响，但仅影响输出到差分传输线的电流信号的幅度。以这种方式，发送装置可以抑制共模电位的波动，并且可以执行高速，长距离的信号传输。

59. 发明申请

US20080272821A1 Signal Converting Circuit 有权
标题翻译：信号转换电路
公开(公告)号：US20080272821A1
公开(公告)日：2008-11-06
申请号：US11910068
申请日：2006-05-17
申请人： Satoshi Miura , Makoto Masuda
发明人： Satoshi Miura , Makoto Masuda
IPC分类号： H03L5/00 , H03F3/45
CPC分类号： H03F3/45183 , H03F1/223 , H03F3/345 , H03F3/45475 , H03F3/505 , H03F2203/45288 , H03F2203/45352 , H03F2203/45612 , H03F2203/45652 , H03F2203/45702 , H03K17/04106
摘要： A signal conversion circuit 2 comprises a differential amplifier portion 10 and a source follower portion 20. When differential voltage signals INp and INn are input to a first input terminal 5 and second input terminal 6 respectively, operations occurs either in a mode in which only the differential amplifier portion 10 operates, or a mode in which both the differential amplifier portion 10 and the source follower portion 20 operate, or a mode in which only the source follower portion 20 operates, according to the levels of the differential voltage signals INp and INn. The differential amplifier portion 10 and source follower portion 20 have fewer components compared with a circuit comprising two differential amplifier circuits. By this means, the circuit area can be reduced, and in addition current consumption can be reduced. Also, because the source follower portion 20 performs non-inverting amplification of the differential voltage signals INp and INn, high-speed operation is possible.
摘要翻译：信号转换电路2包括差分放大器部分10和源极跟随器部分20。当差分电压信号INp和INn分别输入到第一输入端子5和第二输入端子6时，操作以仅仅差分放大器部分10工作的模式或者差分放大器部分10和源极跟随器部分20根据差分电压信号INp和INn的电平来操作或仅源极跟随器部分20工作的模式。与包括两个差分放大器电路的电路相比，差分放大器部分10和源极跟随器部分20具有较少的部件。通过这种方式，可以减少电路面积，并且可以减少电流消耗。此外，由于源极跟随器部分20执行差分电压信号INp和INn的非反相放大，因此可以进行高速操作。

60. 发明申请

US20080170337A1 Tunnel Magnetoresistive Effect Element and Thin-Film Magnetic Head with Tunnel Magnetoresistive Effect Read Head Element 有权
标题翻译：隧道磁阻效应元件和具有隧道磁阻效应的薄膜磁头读头元件
公开(公告)号：US20080170337A1
公开(公告)日：2008-07-17
申请号：US11622603
申请日：2007-01-12
申请人： Kei Hirata , Satoshi Miura
发明人： Kei Hirata , Satoshi Miura
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3993 , H01F10/3272 , H01F41/307 , H01L43/10 , Y10T428/1114
摘要： A TMR element includes a lower electrode layer, a TMR multi-layer stacked on the lower electrode layer, and an upper electrode layer stacked on the TMR multi-layer. The TMR multi-layer includes a tunnel barrier layer having a three-layered structure of a first crystalline layer, a crystalline semiconductor layer and a second crystalline insulation layer stacked in this order.
摘要翻译： TMR元件包括下电极层，层叠在下电极层上的TMR多层和层叠在TMR多层上的上电极层。 TMR多层包括具有第一结晶层，结晶半导体层和第二晶体绝缘层的三层结构的隧道势垒层，该层结构按此顺序堆叠。

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