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51. 发明申请

US20050104202A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20050104202A1
公开(公告)日：2005-05-19
申请号：US11024459
申请日：2004-12-30
申请人： Yoshihiro Tomita , Shinji Baba
发明人： Yoshihiro Tomita , Shinji Baba
IPC分类号： H01L23/12 , H01L21/301 , H01L21/304 , H01L21/56 , H01L23/498 , H01L25/065 , H01L25/07 , H01L25/18 , H01L23/34
CPC分类号： H01L24/32 , H01L23/49822 , H01L24/97 , H01L2224/16225 , H01L2224/27013 , H01L2224/32225 , H01L2224/73204 , H01L2224/83051 , H01L2224/83102 , H01L2224/92125 , H01L2224/97 , H01L2924/00014 , H01L2924/01004 , H01L2924/01033 , H01L2924/01082 , H01L2924/15153 , H01L2924/1517 , H01L2924/18161 , H01L2224/81 , H01L2224/83 , H01L2924/00012 , H01L2924/3512 , H01L2924/00 , H01L2224/0401
摘要： A plurality of chips are mounted on a substrate, coupling portions between the chips and the substrate are sealed, the chips have rear surfaces thereof collectively polished, and the substrate with the chips thereon are separated into independent semiconductor devices.
摘要翻译：多个芯片安装在基板上，芯片和基板之间的耦合部分被密封，芯片的后表面被共同抛光，并且其上具有芯片的基板被分离成独立的半导体器件。

52. 发明授权

US06704415B1 Echo canceler 失效
标题翻译：回波消除器
公开(公告)号：US06704415B1
公开(公告)日：2004-03-09
申请号：US09354185
申请日：1999-07-15
申请人： Hiroshi Katayama , Yasushi Yamazaki , Hitoshi Matsuzawa , Yoshihiro Tomita , Mutsumi Saito , Hisanari Kimura
发明人： Hiroshi Katayama , Yasushi Yamazaki , Hitoshi Matsuzawa , Yoshihiro Tomita , Mutsumi Saito , Hisanari Kimura
IPC分类号： H04M100
CPC分类号： H04M9/082
摘要： An echo canceler makes it possible to adaptably control a power of speech reception voice and to reduce distortion of a voice output from a speaker. The echo canceler has a basic structure includes a power control section controlling a power for a speech reception voice, a first filtering section removing a particular component from an output of the power control section, an echo canceling section removing echo components of a speech reception voice, which are added to a speech transmission voice, a second filtering section filtering particular components of the speech reception and transmission voices, and a state judgement section judging existences of the speech reception and transmission voices from an output of the second filtering section and controlling a power attenuation amount of the power control section based on the judgement result.
摘要翻译：回波消除器使得可以适应性地控制语音接收语音的功率并且减少来自扬声器的语音输出的失真。回波消除器具有基本结构，包括控制语音接收语音的功率的功率控制部分，从功率控制部分的输出中去除特定分量的第一滤波部分，去除语音接收语音的回声分量的回声消除部分，其被添加到语音传输语音中，第二滤波部分滤除语音接收和传输语音的特定分量，以及状态判断部分，从第二滤波部分的输出判断语音接收和传输语音的存在，并且控制功率控制部的功率衰减量基于判断结果。

53. 发明授权

US06288851B1 Optical semiconductor device with convergent lens 失效
标题翻译：具有会聚透镜的光学半导体器件
公开(公告)号：US06288851B1
公开(公告)日：2001-09-11
申请号：US09425211
申请日：1999-10-22
申请人： Yoshihiro Tomita
发明人： Yoshihiro Tomita
IPC分类号： G02B300
CPC分类号： H01L31/0203 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： An optical semiconductor device with a convergent lens comprising: a convergent lens 1, a wiring pattern 11 formed on a surface of the convergent lens 1, wherein the wiring pattern has an opening for converging a light, and a semiconductor element 2 electrically directly connected with a back surface of the wiring pattern 11 for electrically connecting this to an outside, whereby the size of the device can be miniaturized by preventing outer terminals from protruding from a side surface of a hollow package, and a cost of the device is low.
摘要翻译：一种具有会聚透镜的光学半导体器件，包括：会聚透镜1，形成在会聚透镜1的表面上的布线图案11，其中布线图案具有用于会聚光的开口;以及半导体元件2，其与布线图案11的后表面，用于将其电连接到外部，由此通过防止外部端子从中空封装的侧表面突出而能够使装置的尺寸小型化，并且该装置的成本低。

54. 发明授权

US06243933B1 Piezoelectric resonator and method for fabricating the same 有权
标题翻译：压电谐振器及其制造方法
公开(公告)号：US06243933B1
公开(公告)日：2001-06-12
申请号：US09303682
申请日：1999-05-03
申请人： Masato Sugimoto , Katsu Takeda , Yoshihiro Tomita , Osamu Kawasaki
发明人： Masato Sugimoto , Katsu Takeda , Yoshihiro Tomita , Osamu Kawasaki
IPC分类号： H04R1700
CPC分类号： H03H9/177 , H03H3/04 , H03H9/02031 , H03H9/0207 , H03H9/176 , Y10T29/42 , Y10T29/49004
摘要： A wafer with a reversed domain is prepared for two piezoelectric single crystal plates and of about the same thickness by using direct bonding without any adhesive. Driving electrodes are formed on two principal planes of the wafer with a reversed domain to provide a piezoelectric resonator. A piezoelectric resonator having the structure with a reversed polarization and using odd-order vibration modes vibrating with a fundamental wave has a wavelength of a thickness thereof and suppresses scattering of the thickness of the domains with a reversed polarization. In the direct bonding, the axes of the spontaneous polarization of the two piezoelectric single crystal plates are reverse to each other and crystalline axes other than the axes of polarization are shifted intentionally by an angle other than zero. Thus, spurious modes are suppressed in a simple way.
摘要翻译：对于两个压电单晶板制备具有反向畴的晶片，并且通过直接接合而没有任何粘合剂制备大约相同的厚度。在晶片的两个主平面上形成驱动电极，具有反向的畴，以提供压电谐振器。具有反极化结构和使用基波振荡的奇数振动模式的压电谐振器具有其厚度的波长，并且抑制具有反向偏振的畴的厚度的散射。在直接接合中，两个压电单晶板的自发极化的轴线彼此相反，并且除偏振轴之外的结晶轴有意地以不同于零的角度移动。因此，以简单的方式抑制杂散模式。

55. 发明授权

US5994821A Displacement control actuator 失效
标题翻译：位移控制执行器
公开(公告)号：US5994821A
公开(公告)日：1999-11-30
申请号：US978422
申请日：1997-11-25
申请人： Katsumi Imada , Tetsuro Otsuchi , Masato Sugimoto , Yoshihiro Tomita , Osamu Kawasaki
发明人： Katsumi Imada , Tetsuro Otsuchi , Masato Sugimoto , Yoshihiro Tomita , Osamu Kawasaki
IPC分类号： H01L41/09 , H01L41/04
CPC分类号： H01L41/094
摘要： Rectangular piezoelectric substrates each of which has main surfaces opposed to each other, measures 50 .mu.m thick by 1 mm wide by 8 mm long, and is made of lithium niobate (LiNbO.sub.3), are directly bonded on the main surfaces so that their axes of polarization are set in directions reverse to each other, thereby composing a piezoelectric element. Electrodes which are 0.2 .mu.m thick and made of chromium-nickel are formed on the two main surfaces of the piezoelectric element opposed to each other, thereby resulting in a precision displacement control actuator of a bimorph type mechanical-electrical converter element. This configuration makes it possible to provide a compact precision displacement control actuator which has a large displacement and extremely small variations of characteristics such as displacement and resonance frequency.
摘要翻译：矩形压电基板各自具有彼此相对的主表面，其厚度为50μm厚×1mm×8mm长，由铌酸锂（LiNbO 3）构成，直接接合在主表面上，使得它们的轴线极化被设置在彼此相反的方向上，从而构成压电元件。在压电元件的两个主表面上形成厚度为0.2μm，由铬镍制成的电极，从而形成双压电晶片式机电转换元件的精密位移控制致动器。这种构造使得可以提供一种紧凑的精确位移控制致动器，其具有大的位移和极小的位移和共振频率等特性的变化。

56. 发明授权

US5969463A Energy trapping piezoelectric device and producing method thereof 失效
标题翻译：能量捕获压电器件及其制造方法
公开(公告)号：US5969463A
公开(公告)日：1999-10-19
申请号：US891132
申请日：1997-07-10
申请人： Yoshihiro Tomita , Tetsuyoshi Ogura , Atsushi Komatsu , Shinji Itamochi
发明人： Yoshihiro Tomita , Tetsuyoshi Ogura , Atsushi Komatsu , Shinji Itamochi
IPC分类号： H03H3/02 , H03H9/02 , H03H9/10 , H03H9/56 , H01L41/08
CPC分类号： H03H9/562 , H03H3/02 , H03H9/02118 , H03H9/177 , H03H2003/0428
摘要： An energy trapping piezoelectric device trapping a thickness vibration into projections which suppress a reflection of a vibration from end portions of electrodes provided substantially on a piezoelectric plate, and which suppress unnecessary spurious vibrations, low impedance and higher frequency, and a method of easily producing such a piezoelectric device are provided. The piezoelectric device has an energy trapping projection provided over a piezoelectric plate, and a top electrode is divided into a exciting electrode and dummy electrode. A small gap is provided between the divided electrodes, and the electrodes are electrically insulated from each other. The thickness vibration is not generally reflected, and vibrating energies due to the thickness vibrations are substantially trapped into the projections provided on the piezoelectric plate.
摘要翻译：将厚度振动捕获到突起中的能量捕获压电器件，其抑制基本上在压电板上提供的电极的端部的振动的反射，并且抑制不必要的寄生振动，低阻抗和更高的频率，以及容易地产生这样的方法提供压电装置。压电装置具有设置在压电板上的能量捕获突起，顶电极被分成激励电极和虚拟电极。在分割电极之间设置小间隙，电极彼此电绝缘。厚度振动通常不被反射，并且由于厚度振动引起的振动能量基本上被捕获到设置在压电板上的突起中。

57. 发明授权

US5959353A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5959353A
公开(公告)日：1999-09-28
申请号：US66859
申请日：1998-04-27
申请人： Yoshihiro Tomita
发明人： Yoshihiro Tomita
IPC分类号： H01L23/12 , H01L21/56 , H01L21/60 , H01L23/00 , H01L23/10 , H05K3/34 , H01L23/06
CPC分类号： H01L23/564 , H01L21/563 , H01L23/10 , H01L24/29 , H01L24/32 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/83102 , H01L2224/92125 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01078 , H01L2924/15311 , H01L2924/16195
摘要： A semiconductor device includes a plastic substrate with a multilayer structure having electrically conductive lines and an embedded planar metal layer, a semiconductor chip having electrodes connected to respective lines by solder, and a sealing member of a synthetic resin adhering the semiconductor chip tightly to the plastic substrate.
摘要翻译：半导体器件包括具有导电线和嵌入式平面金属层的多层结构的塑料基板，具有通过焊料连接到各线的电极的半导体芯片，以及将半导体芯片紧密地粘附到塑料上的合成树脂的密封构件基质。

58. 发明授权

US5929555A Piezoelectric resonator and method for fabricating the same 失效
标题翻译：压电谐振器及其制造方法
公开(公告)号：US5929555A
公开(公告)日：1999-07-27
申请号：US834207
申请日：1997-04-15
申请人： Masato Sugimoto , Katsu Takeda , Yoshihiro Tomita , Osamu Kawasaki
发明人： Masato Sugimoto , Katsu Takeda , Yoshihiro Tomita , Osamu Kawasaki
IPC分类号： H03H3/04 , H03H9/02 , H03H9/17 , H03H9/56 , H01L41/08
CPC分类号： H03H9/177 , H03H3/04 , H03H9/02031 , H03H9/0207 , H03H9/176 , Y10T29/42 , Y10T29/49004
摘要： A wafer with a reversed domain is prepared for two piezoelectric single crystal plates 11 and 12 having about the same thickness as each other by using direct bonding without any adhesive. Then, driving electrodes 13 are formed on two principal planes of the wafer with a reversed domain to provide a piezoelectric resonator. A piezoelectric resonator having the structure with a reverses polarization and using odd-order vibration modes vibrating with a fundamental wave has a wavelength of a thickness thereof suppresses scattering of the thickness of the domains with a reversed polarization. In the direct bonding, the axes of the spontaneous polarization of the two piezoelectric single crystal plates are reverse to each other and crystalline axes other than the axes of polarization are shifted intentionally by an angle other than zero. Thus, spurious modes are suppressed in a simple way.
摘要翻译：通过使用没有任何粘合剂的直接粘合，为具有彼此具有大致相同厚度的两个压电单晶板11和12制备具有反向畴的晶片。然后，驱动电极13形成在具有反向域的晶片的两个主平面上，以提供压电谐振器。具有反转偏振结构和使用基波振荡的奇数振动模式的压电谐振器具有其厚度的波长，抑制具有反向偏振的畴的厚度的散射。在直接接合中，两个压电单晶板的自发极化的轴线彼此相反，并且除偏振轴之外的结晶轴有意地以不同于零的角度移动。因此，以简单的方式抑制杂散模式。

59. 发明授权

US5759753A Piezoelectric device and method of manufacturing the same 失效
公开(公告)号：US5759753A
公开(公告)日：1998-06-02
申请号：US677548
申请日：1996-07-18
申请人： Akihiko Namba , Tetsuyoshi Ogura , Yoshihiro Tomita , Kazuo Eda
发明人： Akihiko Namba , Tetsuyoshi Ogura , Yoshihiro Tomita , Kazuo Eda
IPC分类号： H01L41/22 , H01L41/312 , H01L41/338 , H03H3/02 , H01L21/20 , H01L21/302 , H01L21/463 , H01L21/76
CPC分类号： H03H3/02 , H01L41/312 , H01L41/338
摘要： A piezoelectric device is manufactured by: (1) mirror finishing surfaces of a first substrate and a second substrate made of a piezoelectric element; (2) forming grooves on at least one of the two surfaces of the first and second substrates; (3) joining the mirror-finished surfaces of the first substrate and the second substrate; (4) applying heat to the joined substrates and bonding them; (5) forming an opening on the first substrate so that a part of the exposed areas of the second substrate is exposed through the opening; (6) forming piezoelectric devices by forming electrodes on at least one of the second substrate through the opening and a corresponding area to the exposed area on the rear side of the second substrate; and (7) dividing the bonded substrates into portions each having one of the piezoelectric devices. Through this manufacturing method, piezoelectric devices with high yield ratios and high reliability can be obtained.

60. 发明授权

US5708304A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5708304A
公开(公告)日：1998-01-13
申请号：US708615
申请日：1996-09-05
申请人： Yoshihiro Tomita
发明人： Yoshihiro Tomita
IPC分类号： H01L21/60 , H01L21/56 , H01L23/12 , H01L23/31 , H01L23/498 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/49816 , H01L23/3128 , H01L2224/16 , H01L2224/16225 , H01L2224/451 , H01L2224/48091 , H01L2224/73204 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/15311 , H01L2924/15312 , H01L2924/181 , H01L2924/1815 , H01L2924/30107
摘要： A semiconductor device is reduced in size and has a highly warp resistant structure. A sealing resin formed by transfer molding covers a whole semiconductor chip including pad electrodes, connecting bumps, an upper surface of a wiring board including a plurality of chip connecting patterns, a side surface of the wiring board, and a peripheral area of a lower surface of the wiring board surrounding an area where external electrode portions are located. The wiring board is substantially coextensive in an area with the semiconductor chip in plan configuration. The area occupied by the external electrode portions is smaller than the area occupied by the chip connecting patterns.
摘要翻译：半导体器件的尺寸减小并且具有高度经纱的结构。通过传递成型形成的密封树脂覆盖整个半导体芯片，其包括焊盘电极，连接凸块，包括多个芯片连接图案的布线板的上表面，布线板的侧表面和下表面的周边区域的布线基板围绕外部电极部分所在的区域。布线板在半导体芯片处于平面配置的区域中基本上共同延伸。由外部电极部分占据的面积小于由芯片连接图案占据的面积。

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