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51. 发明授权

US06700141B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06700141B2
公开(公告)日：2004-03-02
申请号：US09978847
申请日：2001-10-17
申请人： Susumu Iwamoto , Tatsuhiko Fujihira , Katsunori Ueno , Yasuhiko Onishi , Takahiro Sato
发明人： Susumu Iwamoto , Tatsuhiko Fujihira , Katsunori Ueno , Yasuhiko Onishi , Takahiro Sato
IPC分类号： H01L2936
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/7802
摘要： A reliable super-junction semiconductor device is provided that facilitates relaxing the tradeoff relation between the on-resistance and the breakdown voltage and improving the avalanche withstanding capability under an inductive load. The super-junction semiconductor device includes an active region including a thin first alternating conductivity type layer and a heavily doped n+-type intermediate drain layer between first alternating conductivity type layer and an n++-type drain layer, and a breakdown withstanding region including a thick second alternating conductivity type layer. Alternatively, active region includes a first alternating conductivity type layer and a third alternating conductivity type layer between first alternating conductivity type layer and n++-type drain layer, third alternating conductivity type layer being doped more heavily than first alternating conductivity type layer.
摘要翻译：提供了可靠的超结半导体器件，其有助于放松导通电阻和击穿电压之间的折衷关系，并提高在感性负载下的雪崩耐受能力。超结半导体器件包括在第一交替导电型层和n ++类漏极层之间包括薄的第一交替导电型层和重掺杂n +型中间漏极层的有源区，以及包括厚的第二交替导电类型层的击穿耐受区域。或者，有源区包括第一交替导电类型层和第n +型漏极之间的第一交变导电类型层和第三交变导电类型层，第三交变导电类型层比第一交变导电类型层更重掺杂。

52. 发明授权

US06677643B2 Super-junction semiconductor device 有权
标题翻译：超结半导体器件
公开(公告)号：US06677643B2
公开(公告)日：2004-01-13
申请号：US09811727
申请日：2001-03-19
申请人： Susumu Iwamoto , Tatsuhiko Fujihira , Katsunori Ueno , Yasuhiko Onishi , Takahiro Sato
发明人： Susumu Iwamoto , Tatsuhiko Fujihira , Katsunori Ueno , Yasuhiko Onishi , Takahiro Sato
IPC分类号： H01L2976
CPC分类号： H01L21/26513 , H01L21/266 , H01L29/0634 , H01L29/1095 , H01L29/7802
摘要： A super-junction semiconductor is provided that facilitates easy mass-production thereof, reducing the tradeoff relation between the on-resistance and the breakdown voltage, obtaining a high breakdown voltage and reducing the on-resistance to increase the current capacity thereof. The super-junction semiconductor device includes a semiconductor chip having a first major surface and a second major surface facing in opposite to the first major surface; a layer with low electrical resistance on the side of the second major surface; a first alternating conductivity type layer on low resistance layer, and a second alternating conductivity type layer on the first alternating conductivity type layer. The first alternating conductivity type layer including regions of a first conductivity type and regions of a second conductivity type arranged alternately with each other. The second alternating conductivity type layer including regions of the first conductivity type and regions of the second conductivity type arranged alternately with each other. The spacing between the pn-junctions in the second alternating conductivity type layer is wider than the spacing between the pn-junctions in the first alternating conductivity type layer.
摘要翻译：提供了一种能够容易地进行批量生产，降低导通电阻和击穿电压之间的折衷关系的超结半导体，获得高的击穿电压并降低导通电阻以增加其电流容量。超结半导体器件包括具有第一主表面和面向第一主表面的第二主表面的半导体芯片; 在第二主表面侧具有低电阻的层; 低电阻层上的第一交替导电类型层和第一交变导电类型层上的第二交变导电类型层。第一交变导电类型层包括彼此交替排列的第一导电类型的区域和第二导电类型的区域。包括第一导电类型的区域和第二导电类型的区域的第二交替导电类型层彼此交替排列。第二交变导电类型层中的pn结之间的间隔比第一交变导电类型层中的pn结之间的间隔宽。

53. 发明授权

US06639927B2 Surface emitting semiconductor laser, and its fabrication method 失效
标题翻译：表面发射半导体激光器及其制造方法
公开(公告)号：US06639927B2
公开(公告)日：2003-10-28
申请号：US09749820
申请日：2000-12-28
申请人： Takahiro Sato , Hajime Sakata
发明人： Takahiro Sato , Hajime Sakata
IPC分类号： H01S506
CPC分类号： H01S5/18305 , H01S5/02272 , H01S5/02461 , H01S5/0422 , H01S5/0425 , H01S5/18311 , H01S5/423
摘要： A surface emitting semiconductor laser includes an active region formed on a growth substrate, upper and lower mirror layers that sandwich the active region to construct a vertical cavity, a selective oxidization layer, and a current injecting unit for injecting a current into the active region. The selective oxidization layer is selectively oxidized and insulated and is provided on the side of the active region opposite to the side of the substrate. In this structure, a post portion is formed by removing semiconductor material formed on the substrate down to an uppermost or halfway level of the selective oxidization layer while the selective oxidization layer is used as an etch stop layer, and the selective oxidization layer acts as both a current confinement layer for the current injection and an insulating layer for the current injecting unit.
摘要翻译：表面发射半导体激光器包括形成在生长衬底上的有源区，夹持有源区以构成垂直腔的上镜和下镜层，选择性氧化层和用于将电流注入到有源区中的电流注入单元。选择性氧化层被选择性地氧化和绝缘，并且设置在与衬底侧相对的有源区的一侧。在这种结构中，通过将形成在衬底上的半导体材料移除到选择性氧化层的最上层或中间层，同时选择性氧化层用作蚀刻停止层，并且选择性氧化层用作两者用于电流注入的电流限制层和用于电流注入单元的绝缘层。

54. 发明授权

US06621132B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06621132B2
公开(公告)日：2003-09-16
申请号：US09942378
申请日：2001-08-30
申请人： Yasuhiko Onishi , Tatsuhiko Fujihira , Katsunori Ueno , Susumu Iwamoto , Takahiro Sato
发明人： Yasuhiko Onishi , Tatsuhiko Fujihira , Katsunori Ueno , Susumu Iwamoto , Takahiro Sato
IPC分类号： H01L2976
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0696
摘要： The super-junction semiconductor device, which facilitates increased switching speed and reduced on-resistance, includes an alternating conductivity type layer formed of n-type drift regions and p-type partition regions arranged alternately, a pair of the n-type drift region and p-type partition region repeating at a first repeating pitch, and trenches each containing a gate electrode buried therein, the trenches being arranged repeatedly at a second repeating pitch wider than the first repeating pitch. The device further includes one or more n-type channel regions between a p-type partition regions and a p-type well region.
摘要翻译：有助于提高开关速度和降低导通电阻的超结半导体器件包括由n型漂移区和交替布置的p型分隔区形成的交替导电型层，一对n型漂移区和以第一重复间距重复的p型分隔区和每个包含埋入其中的栅电极的沟槽，所述沟槽以比第一重复间距更宽的第二重复间距重复布置。该装置还包括在p型分隔区域和p型阱区域之间的一个或多个n型沟道区域。

55. 发明授权

US06576935B2 Bidirectional semiconductor device and method of manufacturing the same 有权
公开(公告)号：US06576935B2
公开(公告)日：2003-06-10
申请号：US09894989
申请日：2001-06-28
申请人： Yasuhiko Onishi , Tatsuhiko Fujihira , Susumu Iwamoto , Takahiro Sato
发明人： Yasuhiko Onishi , Tatsuhiko Fujihira , Susumu Iwamoto , Takahiro Sato
IPC分类号： H01L2974
CPC分类号： H01L29/7824 , H01L29/0634 , H01L29/0696 , H01L29/7801 , H01L29/7802 , H01L29/7825 , H01L29/7831
摘要： A bidirectional semiconductor device facilitates making a current flow from the first MOSFET to the second MOSFET and vice versa across low on-resistance and exhibits a high breakdown voltage. The bidirectional semiconductor device includes a first n-channel MOSFET including base regions, a second n-channel MOSFET including base regions, and an alternating conductivity type layer formed of drift region and partition regions arranged alternately. Partition regions are isolated from base regions by a high resistivity region and from base regions by a high resistivity region to maintaining a high breakdown voltage between first MOSFET and the second MOSFET. By connecting high resistivity regions and via drift regions to each other, a current is made flow from the first MOSFET to the second MOSFET and vice versa and the on-voltage is reduced.

56. 发明授权

US06519128B1 Gas-type power breaker 有权
标题翻译：燃气式断路器
公开(公告)号：US06519128B1
公开(公告)日：2003-02-11
申请号：US09639638
申请日：2000-08-16
申请人： Goro Nakamura , Takahiro Sato
发明人： Goro Nakamura , Takahiro Sato
IPC分类号： H01H7300
CPC分类号： H01H39/00 , H01H2039/008
摘要： A reset knob 20 is mounted to a tip end of a shaft. A front cover 24 having a resilient locking arm 23 is mounted to the reset knob 20. The base body 15 is formed with an engaging projection 25. The resilient locking arm 23 and the engaging projection 25 are engaged with each other at an initial position of the shaft, thereby forming an engaging portion B between the base body 15 and the front cover 24. Therefore, it is possible to prevent the shaft from sliding by factor such as impact and vibration other than sublimation of the gas-starting agent, and to prevent the power circuit from being interrupted.
摘要翻译：复位旋钮20安装到轴的末端。具有弹性锁定臂23的前盖24安装到复位旋钮20.基体15形成有接合突起25.弹性锁定臂23和接合突起25在初始位置处彼此接合轴，从而在基体15和前盖24之间形成接合部分B.因此，除了气体起动剂的升华之外，可以防止轴因冲击和振动等因素而滑动，并且防止电源电路中断。

57. 发明授权

US06417415B1 Methods of solidifying low-boiling-point hydrocarbon and handling the same, and regeneration thereof 失效
标题翻译：凝固低沸点烃并进行处理的方法及其再生
公开(公告)号：US06417415B1
公开(公告)日：2002-07-09
申请号：US09539717
申请日：2000-03-31
申请人： Hiroshi Sakaguchi , Tomokazu Yoshimura , Rumiana Tzoneva , Takashi Masuda , Takahiro Sato , Akio Matsuda
发明人： Hiroshi Sakaguchi , Tomokazu Yoshimura , Rumiana Tzoneva , Takashi Masuda , Takahiro Sato , Akio Matsuda
IPC分类号： C07C720
CPC分类号： C07C9/00 , Y10S585/932
摘要： Disclosed are a method of solidifying a low-boiling-point hydrocarbon, wherein the low-boiling-point hydrocarbon (including hydrocarbons which are gaseous at ordinary temperature) is brought into contact with a metal salt of an aliphatic carboxylic acid, and if necessary a high-boiling-point hydrocarbon, suspended in water, to form a solid aggregate substance, a method of handling the low-boiling-point hydrocarbon, wherein the solid aggregate substance is stored or transported, and a method of regenerating the low-boiling-point hydrocarbon, wherein the solid aggregate substance is decomposed by opening or heating, to obtain the low-boiling-point hydrocarbon. According to the methods, a wide variety of gaseous and highly volatile liquid hydrocarbons can be safely and easily solidified without using harmful reagent, and during storage, transportation, etc., the gaseous hydrocarbons and highly volatile liquids can be handled as a solid material. Further, by releasing under atmospheric pressure at room temperature or by heating if necessary, the original hydrocarbons can be easily obtained.
摘要翻译：公开了一种固化低沸点烃的方法，其中低沸点烃（包括常温下为气态的烃）与脂族羧酸的金属盐接触，如果需要，悬浮在水中的高沸点烃形成固体骨料物质，其中贮存或运输固体骨料物质的低沸点烃的处理方法，以及低沸点烃的再生方法，其中固体骨料通过开放或加热分解，得到低沸点烃。根据该方法，可以在不使用有害试剂的情况下安全且容易地固化各种气态和高挥发性液体烃，并且在储存，运输等期间，气态烃和高挥发性液体可以作为固体材料处理。此外，通过在常压下在室温下放出或者根据需要进行加热，可以容易地获得原始的碳氢化合物。

58. 发明授权

US06407159B2 Silicone rubber composition for keypads 失效
标题翻译：用于键盘的硅橡胶组合物
公开(公告)号：US06407159B2
公开(公告)日：2002-06-18
申请号：US09731192
申请日：2000-12-06
申请人： Seiichi Sugimoto , Takahiro Sato
发明人： Seiichi Sugimoto , Takahiro Sato
IPC分类号： C08K310
CPC分类号： C08L83/04 , C08G77/12 , C08K2003/265 , C08L83/00 , C08L2666/54
摘要： A silicone rubber composition useful for keypads comprising a silicone rubber base produced by mixing under heat (A) a cross-linkable diorganopolysiloxane and (B) 20 to about 250 parts by weight calcium carbonate powder per 100 parts by weight of component (A), and (C) a curing agent consisting of (i) an organic peroxide or (ii) an organohydrogenpolysiloxane and a platinum catalyst in an amount sufficient to effect cure of the composition.
摘要翻译：一种可用于小键盘的硅橡胶组合物，其包含通过在加热下（A）可交联的二有机聚硅氧烷混合而制备的硅橡胶基质和（B）每100重量份组分（A）为20至约250重量份的碳酸钙粉末，和（C）由（i）有机过氧化物或（ii）有机氢聚硅氧烷和铂催化剂组成的固化剂，其量足以实现组合物的固化。

59. 发明授权

US06362447B1 Electrode wire for electrical discharge machining apparatus 有权
公开(公告)号：US06362447B1
公开(公告)日：2002-03-26
申请号：US09264863
申请日：1999-03-09
申请人： Kiyoshi Shimojima , Seigi Aoyama , Hideo Kawano , Koichi Tamura , Takahiro Sato , Takamitsu Kimura , Masato Watabe
发明人： Kiyoshi Shimojima , Seigi Aoyama , Hideo Kawano , Koichi Tamura , Takahiro Sato , Takamitsu Kimura , Masato Watabe
IPC分类号： B23H100
摘要： It is an object of the invention to provide an electrode wire for an electrical discharge machining apparatus, which is low-priced in cost of production, has sufficient conductivity and strength at high temperature and is suited for improving the speed of electrical discharge machining. Cu—Zn alloy covering layer is formed around a core metallic wire formed of Cu—0.02 to 0.2 Zr alloy or Cu—0.15 to 0.25 Sn—0.15 to 0.25 In alloy.

60. 发明授权

US6068896A Molded colored articles 失效
标题翻译：模制彩色文章
公开(公告)号：US6068896A
公开(公告)日：2000-05-30
申请号：US808839
申请日：1997-02-28
申请人： Harutaka Manabe , Daiichiro Kawashima , Tomokazu Nishikawa , Takahiro Sato , Hiroshi Mukai , Masao Kobayashi
发明人： Harutaka Manabe , Daiichiro Kawashima , Tomokazu Nishikawa , Takahiro Sato , Hiroshi Mukai , Masao Kobayashi
IPC分类号： B29C45/00 , B29C45/16 , B60R13/04
CPC分类号： B60R13/04 , B29C45/0013 , B29C45/0025 , B29C45/1642 , B29C2045/0093 , B29K2105/16 , B29K2995/002 , Y10T428/24901
摘要： An injection molded colored article produced from colored material prepared by blending a coloring pigment with a synthetic resin. The article has the shape of a long main body section and a thin plate section integrally molded along a side edge of the main body section. A back surface of the main body has a curve formed from an inner end thereof. The thin plate section is formed into a tapered shape, having its thickness decreased toward its outer edge. An inclined angle .theta. defined between a upper surface and a back surface of said thin plate section, a ratio of distance A between an inner edge of said upper surface and an outer edge of said thin plate section to a distance B between said inner end of said back surface of said thin plate section and said outer edge, A/B, and a thickness C of said main body section are selected to fall within the following ranges;5.ltoreq..theta..ltoreq.45.degree.;0.3.ltoreq.A/B.ltoreq.1; and1.5.ltoreq.C.ltoreq.10 mm.
摘要翻译：由着色颜料与合成树脂混合制备的由有色材料制成的注射成型的有色制品。该制品具有沿着主体部分的侧边缘整体模制的长主体部分和薄板部分的形状。主体的后表面具有从其内端形成的曲线。薄板部分形成为其厚度朝向其外边缘减小的锥形形状。限定在所述薄板部分的上表面和后表面之间的倾斜角θ，所述上表面的内边缘和所述薄板部分的外边缘之间的距离A与所述薄板部分的所述内端之间的距离B的比率所述薄板部分的所述后表面和所述外边缘A / B，并且所述主体部分的厚度C被选择为落在以下范围内; 5

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