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51. 发明授权

US08902691B2 Semiconductor device having charge pump circuit and information processing apparatus including the same 有权
标题翻译：具有电荷泵电路的半导体器件和包括该电荷泵电路的信息处理设备
公开(公告)号：US08902691B2
公开(公告)日：2014-12-02
申请号：US13607146
申请日：2012-09-07
申请人： Seiji Narui , Hitoshi Tanaka
发明人： Seiji Narui , Hitoshi Tanaka
IPC分类号： G11C5/14 , G11C16/30
CPC分类号： G11C5/145 , G11C5/14 , G11C16/30
摘要： Disclosed herein is a device that includes a capacitor, a pumping circuit supplying a pumping signal changed between first and second potential to a first electrode of the capacitor, and an output circuit precharging a second electrode of the capacitor to a third potential different from the first and second potentials. The second electrode of the capacitor is thereby changed from the third potential to a fourth potential higher than the third potential when the pumping signal is changed from the first potential to the second potential.
摘要翻译：这里公开了一种装置，其包括电容器，提供在第一和第二电位之间改变到电容器的第一电极的泵浦信号的泵浦电路，以及将电容器的第二电极预充电到与第一电位不同的第三电位的输出电路和第二个潜力。因此当泵浦信号从第一电位变为第二电位时，电容器的第二电极从第三电位变为高于第三电位的第四电位。

52. 发明授权

US08770743B2 Eyewear 有权
标题翻译：眼镜
公开(公告)号：US08770743B2
公开(公告)日：2014-07-08
申请号：US13299357
申请日：2011-11-18
申请人： Kazuo Tsubota , Hitoshi Tanaka
发明人： Kazuo Tsubota , Hitoshi Tanaka
IPC分类号： G02C11/00 , G02C5/00
CPC分类号： G02C5/001 , A61F9/0008 , G02C11/00
摘要： Eyewear comprising a frame and a liquid storage portion that is disposed within the frame and that includes a cavity for storing liquid. The liquid storage portion includes a gas passing section that allows gas to pass therethrough from the cavity to an inside surface of the frame, which is a surface facing a head of a wearer when the frame is worn on the head, but does not allow liquid to pass therethrough from the cavity to the inside surface of the frame. The liquid storage portion may be disposed such that an outer surface of the liquid storage portion is further inside the frame than an outer surface of the frame.
摘要翻译：眼镜包括框架和液体储存部分，其设置在框架内并且包括用于储存液体的空腔。液体储存部分包括气体通过部分，其允许气体从腔体通过到框架的内表面，该框架是当框架佩戴在头部上时面向佩戴者头部的表面，但不允许液体从腔中通过到框架的内表面。液体储存部可以布置成使得液体存储部分的外表面在框架内部比框架的外表面更进一步。

53. 发明授权

US08703890B2 Polyfunctional polymer of high stereoregularity and method for producing the same 有权
标题翻译：高立体规整性的多官能聚合物及其制备方法
公开(公告)号：US08703890B2
公开(公告)日：2014-04-22
申请号：US13138210
申请日：2010-01-25
申请人： Hitoshi Tanaka
发明人： Hitoshi Tanaka
IPC分类号： C08F24/00 , C08F34/02 , C07D317/34
CPC分类号： C07D317/34 , C08F8/02 , C08F8/04 , C08F8/12 , C08F8/30 , C08F24/00
摘要： This invention provides a polyfunctional polymer having high stereoregularity, in particular, isotacticity, and provides a production process thereof. The present invention relates to a polymer having, in a molecule, a repeating unit represented by General Formula (2): wherein R1 and R2 are different, and each represents a hydrogen atom, an alkyl group and an aryl group; * represents an asymmetrical carbon, the polymer containing meso diad (m) and racemo diad (r) at a proportion of 60:40 to 100:0 (m:r). The invention also relates to chemical modifications and a production process of the polymer.
摘要翻译：本发明提供具有高立构规整性，特别是全同立构规整度的多官能聚合物，并提供其制备方法。本发明涉及在分子中具有由通式（2）表示的重复单元的聚合物：其中R1和R2不同，并且各自表示氢原子，烷基和芳基; *表示不对称碳，聚合物含有以60:40至100:0（m:r）的比例含有内消旋二（m）和赛摩摩二烯（r）。本发明还涉及聚合物的化学改性和生产方法。

54. 发明申请

US20120303248A1 ABNORMALITY DETECTION APPARATUS AND ABNORMALITY DETECTION METHOD FOR MULTI-CYLINDER INTERNAL COMBUSTION ENGINE 有权
标题翻译：多缸内燃机异常检测装置及异常检测方法
公开(公告)号：US20120303248A1
公开(公告)日：2012-11-29
申请号：US13480921
申请日：2012-05-25
申请人： Masashi Hakariya , Isao Nakajima , Yoshihisa Oda , Hitoshi Tanaka , Kiyotaka Kushihama , Shota Kitano , Kazuyuki Noda , Katsumi Adachi , Yuichi Kohara , Akihiro Katayama
发明人： Masashi Hakariya , Isao Nakajima , Yoshihisa Oda , Hitoshi Tanaka , Kiyotaka Kushihama , Shota Kitano , Kazuyuki Noda , Katsumi Adachi , Yuichi Kohara , Akihiro Katayama
IPC分类号： F02D41/30 , F02D41/26
CPC分类号： F02D41/1498 , F02D41/0085 , F02D41/1495 , F02D41/22 , F02D41/3076
摘要： An abnormality detection apparatus for a multi-cylinder internal combustion engine changes a fuel injection quantity of a predetermined target cylinder to detect an abnormality of an internal combustion engine based on values of rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity. The abnormality detection apparatus corrects the values of the rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity based on at least one of the number of revolutions of the engine and an engine load at a corresponding detection time.
摘要翻译：用于多气缸内燃机的异常检测装置根据与在目标气缸的变化之前和之后检测到的目标气缸相关的旋转变化的值来改变预定目标气缸的燃料喷射量以检测内燃机的异常燃油喷射量。异常检测装置在相应的检测时间的基础上，基于发动机的转数和发动机负荷中的至少一方来校正与燃料喷射量的变化前后检测到的目标气缸的旋转变动的值。

55. 发明申请

US20120253642A1 APPARATUS FOR DETECTING IMBALANCE ABNORMALITY IN AIR-FUEL RATIO BETWEEN CYLINDERS IN MULTI-CYLINDER INTERNAL COMBUSTION ENGINE 有权
标题翻译：用于检测多缸内燃机中气缸之间的空燃比不平衡异常的装置
公开(公告)号：US20120253642A1
公开(公告)日：2012-10-04
申请号：US13386260
申请日：2011-03-28
申请人： Shota Kitano , Hitoshi Tanaka , Isao Nakajima , Yoshihisa Oda , Masashi Hakariya , Kiyotaka Kushihama , Kazuyuki Noda , Akihiro Katayama , Yuichi Kohara , Katsumi Adachi
发明人： Shota Kitano , Hitoshi Tanaka , Isao Nakajima , Yoshihisa Oda , Masashi Hakariya , Kiyotaka Kushihama , Kazuyuki Noda , Akihiro Katayama , Yuichi Kohara , Katsumi Adachi
IPC分类号： F02D41/30
CPC分类号： F02D41/0085 , F02D41/126 , F02D41/1441 , F02D41/1443 , F02D41/1456 , F02D41/1498 , F02D2200/0816 , F02D2200/1012
摘要： An apparatus for detecting imbalance abnormality in an air-fuel ratio between cylinders in a multi-cylinder internal combustion engine according to the present invention increases a fuel injection quantity to a predetermined target cylinder to detect imbalance abnormality in an air-fuel ratio between cylinders at least based upon a rotation variation of the target cylinder after increasing the fuel injection quantity. The increase in the fuel injection quantity is carried out in the middle of performing the post-fuel-cut rich control. Since timing of the post-fuel cut rich control is used to increase the fuel injection quantity, the exhaust emission deterioration due to abnormality detection execution can be prevented as much as possible.
摘要翻译：根据本发明的用于检测多缸内燃机中的气缸之间的空燃比的不平衡异常的装置将预定目标气缸的燃料喷射量增加以检测气缸之间的空燃比的不平衡异常至少基于在增加燃料喷射量之后目标气缸的旋转变化。燃料喷射量的增加在执行后燃料切断浓缩控制的中间进行。由于使用后燃料切断浓缩控制的定时来增加燃料喷射量，所以可以尽可能地防止由异常检测执行引起的废气劣化。

56. 发明授权

US08222952B2 Semiconductor device having a complementary field effect transistor 失效
标题翻译：具有互补场效应晶体管的半导体器件
公开(公告)号：US08222952B2
公开(公告)日：2012-07-17
申请号：US12662038
申请日：2010-03-29
申请人： Shinichi Miyatake , Seiji Narui , Hitoshi Tanaka
发明人： Shinichi Miyatake , Seiji Narui , Hitoshi Tanaka
IPC分类号： H03K3/01
CPC分类号： H03K19/00361 , H03K19/0008 , H03K2217/0018
摘要： A semiconductor device prevents the OFF current of a complementary field effect transistor from varying with changes in ambient temperature. The semiconductor device includes: a substrate voltage generating circuit that generates the substrate voltage of an n-channel MOS transistor forming a CMOS; a replica transistor that is a replica of the n-channel MOS transistor, and is diode-connected; and a voltage applier that applies a voltage of a predetermined voltage value between the anode and cathode of the replica transistor. In this semiconductor device, the substrate voltage of the replica transistor is the substrate voltage generated by the substrate voltage generating circuit. The substrate voltage generating circuit controls the substrate voltage to be generated so that the current value of the current flowing into the replica transistor becomes equal to a given target value.
摘要翻译：半导体器件防止互补场效应晶体管的截止电流随着环境温度的变化而变化。半导体器件包括：衬底电压产生电路，其产生形成CMOS的n沟道MOS晶体管的衬底电压; 复制晶体管，其是n沟道MOS晶体管的复制品，并且是二极管连接的; 以及在复制晶体管的阳极和阴极之间施加预定电压值的电压的施加电压器。在该半导体器件中，复制晶体管的衬底电压是由衬底电压产生电路产生的衬底电压。衬底电压产生电路控制要产生的衬底电压，使得流入复制晶体管的电流的电流值等于给定的目标值。

57. 发明授权

US08171062B2 File management system 有权
标题翻译：文件管理系统
公开(公告)号：US08171062B2
公开(公告)日：2012-05-01
申请号：US12219097
申请日：2008-07-16
申请人： Koichi Hachio , Hitoshi Tanaka , Makoto Nakamoto
发明人： Koichi Hachio , Hitoshi Tanaka , Makoto Nakamoto
IPC分类号： G06F12/00 , G06F17/30
CPC分类号： G06F17/30115
摘要： Since both a physical storage place and a logical storage place in a storage system are separately managed as a directory structure, or a hierarchical structure, even in such a case that the physical storage place has been changed, the logical storage place which is displayed to the user is not changed, and thus, the user can use the file while the user need not become aware of the change of the file. When the contents of a file is displayed, a physical storage destination of the file is acquired based upon both a reference path and a relative path of the file, and then, the file is acquired from the physical storage destination.
摘要翻译：由于存储系统中的物理存储位置和逻辑存储位置都作为目录结构或层次结构分别管理，即使在物理存储位置已经改变的情况下，显示的逻辑存储位置用户没有改变，因此用户可以在用户不需要知道文件的改变的情况下使用该文件。当显示文件的内容时，基于文件的参考路径和相对路径获取文件的物理存储目的地，然后从物理存储目的地获取文件。

58. 发明授权

US07994894B2 Varistor 有权
标题翻译：压敏电阻
公开(公告)号：US07994894B2
公开(公告)日：2011-08-09
申请号：US12426589
申请日：2009-04-20
申请人： Hiroyuki Sato , Makoto Numata , Yo Saito , Hitoshi Tanaka , Goro Takeuchi , Osamu Taguchi , Ryuichi Tanaka
发明人： Hiroyuki Sato , Makoto Numata , Yo Saito , Hitoshi Tanaka , Goro Takeuchi , Osamu Taguchi , Ryuichi Tanaka
IPC分类号： H01C7/10
CPC分类号： H01C7/108 , H01C7/1006 , H01L23/62 , H01L23/647 , H01L33/641 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16268 , H01L2924/00014 , H01L2924/01046 , H01L2924/01079 , H01L2924/09701 , H01L2924/1305 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A varistor having a favorable heat-dissipating property is provided.In the varistor, a composite part having a favorable heat-dissipating property formed by a composite material composed of ZnO and Ag is arranged between main faces of a varistor matrix. Therefore, the heat transmitted from a semiconductor light-emitting device to a varistor part through an outer electrode can rapidly be transferred toward a main face on the opposite side through the composite part. In this varistor, side faces excluding inner side faces are exposed at side faces of the varistor matrix. Such a structure yields a favorable heat-dissipating property.
摘要翻译：提供具有良好的散热特性的变阻器。在变阻器中，通过由ZnO和Ag组成的复合材料形成的具有良好的散热特性的复合部件设置在压敏电阻矩阵的主面之间。因此，通过外部电极从半导体发光元件传递到变阻器部分的热量可以快速地通过复合部件向相反侧的主面转移。在该压敏电阻中，除了内侧面的侧面在压敏电阻矩阵的侧面露出。这种结构产生良好的散热性能。

59. 发明授权

US07873692B2 Instrumentation and control information providing method, instrumentation and control information providing system, instrumentation and control information providing server, and instrumentation and control equipment 有权
标题翻译：仪表控制信息提供方法，仪表控制信息提供系统，仪器仪表控制信息提供服务器，仪表控制设备
公开(公告)号：US07873692B2
公开(公告)日：2011-01-18
申请号：US10738988
申请日：2003-12-19
申请人： Takaaki Yamada , Ikuo Nanno , Kosaku Ando , Hitoshi Tanaka , Hiroyuki Togawa
发明人： Takaaki Yamada , Ikuo Nanno , Kosaku Ando , Hitoshi Tanaka , Hiroyuki Togawa
IPC分类号： G06F15/16
CPC分类号： G05B17/02 , G05B23/0243 , G05B2223/06 , G05D23/1905
摘要： A customer submits a service application by accessing the home page of a service provider through a personal computer 3, and transmits the data including the operation amount and the control amount of a temperature controller 4 to a server 2 of the service provider. The server 2 accumulates the received data, and in accordance with the contents of the received service application, processes the accumulated data and provides the services of calculating the control parameter for the temperature controller 4, producing a model of the object of control and making a diagnosis by checking for a temperature control fault.
摘要翻译：客户通过个人计算机3访问服务提供商的主页来提交服务应用程序，并将包括温度控制器4的操作量和控制量的数据发送到服务提供商的服务器2。服务器2累积接收到的数据，根据接收到的服务应用的内容，处理累积的数据并提供计算温度控制器4的控制参数的服务，生成控制对象的模型，通过检查温度控制故障进行诊断。

60. 发明申请

US20100244936A1 Semiconductor device having a complementary field effect transistor 失效
标题翻译：具有互补场效应晶体管的半导体器件
公开(公告)号：US20100244936A1
公开(公告)日：2010-09-30
申请号：US12662038
申请日：2010-03-29
申请人： Shinichi Miyatake , Seiji Narui , Hitoshi Tanaka
发明人： Shinichi Miyatake , Seiji Narui , Hitoshi Tanaka
IPC分类号： G05F1/10
CPC分类号： H03K19/00361 , H03K19/0008 , H03K2217/0018
摘要： A semiconductor device prevents the OFF current of a complementary field effect transistor from varying with changes in ambient temperature. The semiconductor device includes: a substrate voltage generating circuit that generates the substrate voltage of an n-channel MOS transistor forming a CMOS; a replica transistor that is a replica of the n-channel MOS transistor, and is diode-connected; and a voltage applier that applies a voltage of a predetermined voltage value between the anode and cathode of the replica transistor. In this semiconductor device, the substrate voltage of the replica transistor is the substrate voltage generated by the substrate voltage generating circuit. The substrate voltage generating circuit controls the substrate voltage to be generated so that the current value of the current flowing into the replica transistor becomes equal to a given target value.
摘要翻译：半导体器件防止互补场效应晶体管的截止电流随着环境温度的变化而变化。半导体器件包括：衬底电压产生电路，其产生形成CMOS的n沟道MOS晶体管的衬底电压; 复制晶体管，其是n沟道MOS晶体管的复制品，并且是二极管连接的; 以及在复制晶体管的阳极和阴极之间施加预定电压值的电压的施加电压器。在该半导体器件中，复制晶体管的衬底电压是由衬底电压产生电路产生的衬底电压。衬底电压产生电路控制要产生的衬底电压，使得流入复制晶体管的电流的电流值等于给定的目标值。

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