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    • 52. 发明授权
    • Eyewear
    • 眼镜
    • US08770743B2
    • 2014-07-08
    • US13299357
    • 2011-11-18
    • Kazuo TsubotaHitoshi Tanaka
    • Kazuo TsubotaHitoshi Tanaka
    • G02C11/00G02C5/00
    • G02C5/001A61F9/0008G02C11/00
    • Eyewear comprising a frame and a liquid storage portion that is disposed within the frame and that includes a cavity for storing liquid. The liquid storage portion includes a gas passing section that allows gas to pass therethrough from the cavity to an inside surface of the frame, which is a surface facing a head of a wearer when the frame is worn on the head, but does not allow liquid to pass therethrough from the cavity to the inside surface of the frame. The liquid storage portion may be disposed such that an outer surface of the liquid storage portion is further inside the frame than an outer surface of the frame.
    • 眼镜包括框架和液体储存部分,其设置在框架内并且包括用于储存液体的空腔。 液体储存部分包括气体通过部分,其允许气体从腔体通过到框架的内表面,该框架是当框架佩戴在头部上时面向佩戴者头部的表面,但不允许液体 从腔中通过到框架的内表面。 液体储存部可以布置成使得液体存储部分的外表面在框架内部比框架的外表面更进一步。
    • 56. 发明授权
    • Semiconductor device having a complementary field effect transistor
    • 具有互补场效应晶体管的半导体器件
    • US08222952B2
    • 2012-07-17
    • US12662038
    • 2010-03-29
    • Shinichi MiyatakeSeiji NaruiHitoshi Tanaka
    • Shinichi MiyatakeSeiji NaruiHitoshi Tanaka
    • H03K3/01
    • H03K19/00361H03K19/0008H03K2217/0018
    • A semiconductor device prevents the OFF current of a complementary field effect transistor from varying with changes in ambient temperature. The semiconductor device includes: a substrate voltage generating circuit that generates the substrate voltage of an n-channel MOS transistor forming a CMOS; a replica transistor that is a replica of the n-channel MOS transistor, and is diode-connected; and a voltage applier that applies a voltage of a predetermined voltage value between the anode and cathode of the replica transistor. In this semiconductor device, the substrate voltage of the replica transistor is the substrate voltage generated by the substrate voltage generating circuit. The substrate voltage generating circuit controls the substrate voltage to be generated so that the current value of the current flowing into the replica transistor becomes equal to a given target value.
    • 半导体器件防止互补场效应晶体管的截止电流随着环境温度的变化而变化。 半导体器件包括:衬底电压产生电路,其产生形成CMOS的n沟道MOS晶体管的衬底电压; 复制晶体管,其是n沟道MOS晶体管的复制品,并且是二极管连接的; 以及在复制晶体管的阳极和阴极之间施加预定电压值的电压的施加电压器。 在该半导体器件中,复制晶体管的衬底电压是由衬底电压产生电路产生的衬底电压。 衬底电压产生电路控制要产生的衬底电压,使得流入复制晶体管的电流的电流值等于给定的目标值。
    • 57. 发明授权
    • File management system
    • 文件管理系统
    • US08171062B2
    • 2012-05-01
    • US12219097
    • 2008-07-16
    • Koichi HachioHitoshi TanakaMakoto Nakamoto
    • Koichi HachioHitoshi TanakaMakoto Nakamoto
    • G06F12/00G06F17/30
    • G06F17/30115
    • Since both a physical storage place and a logical storage place in a storage system are separately managed as a directory structure, or a hierarchical structure, even in such a case that the physical storage place has been changed, the logical storage place which is displayed to the user is not changed, and thus, the user can use the file while the user need not become aware of the change of the file. When the contents of a file is displayed, a physical storage destination of the file is acquired based upon both a reference path and a relative path of the file, and then, the file is acquired from the physical storage destination.
    • 由于存储系统中的物理存储位置和逻辑存储位置都作为目录结构或层次结构分别管理,即使在物理存储位置已经改变的情况下,显示的逻辑存储位置 用户没有改变,因此用户可以在用户不需要知道文件的改变的情况下使用该文件。 当显示文件的内容时,基于​​文件的参考路径和相对路径获取文件的物理存储目的地,然后从物理存储目的地获取文件。
    • 60. 发明申请
    • Semiconductor device having a complementary field effect transistor
    • 具有互补场效应晶体管的半导体器件
    • US20100244936A1
    • 2010-09-30
    • US12662038
    • 2010-03-29
    • Shinichi MiyatakeSeiji NaruiHitoshi Tanaka
    • Shinichi MiyatakeSeiji NaruiHitoshi Tanaka
    • G05F1/10
    • H03K19/00361H03K19/0008H03K2217/0018
    • A semiconductor device prevents the OFF current of a complementary field effect transistor from varying with changes in ambient temperature. The semiconductor device includes: a substrate voltage generating circuit that generates the substrate voltage of an n-channel MOS transistor forming a CMOS; a replica transistor that is a replica of the n-channel MOS transistor, and is diode-connected; and a voltage applier that applies a voltage of a predetermined voltage value between the anode and cathode of the replica transistor. In this semiconductor device, the substrate voltage of the replica transistor is the substrate voltage generated by the substrate voltage generating circuit. The substrate voltage generating circuit controls the substrate voltage to be generated so that the current value of the current flowing into the replica transistor becomes equal to a given target value.
    • 半导体器件防止互补场效应晶体管的截止电流随着环境温度的变化而变化。 半导体器件包括:衬底电压产生电路,其产生形成CMOS的n沟道MOS晶体管的衬底电压; 复制晶体管,其是n沟道MOS晶体管的复制品,并且是二极管连接的; 以及在复制晶体管的阳极和阴极之间施加预定电压值的电压的施加电压器。 在该半导体器件中,复制晶体管的衬底电压是由衬底电压产生电路产生的衬底电压。 衬底电压产生电路控制要产生的衬底电压,使得流入复制晶体管的电流的电流值等于给定的目标值。