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51. 发明申请

US20120187333A1 ADJUVANT FOR CONTROLLING POLISHING SELECTIVITY AND CHEMICAL MECHANICAL POLISHING SLURRY COMPRISING THE SAME 有权
标题翻译：用于控制抛光选择性和化学机械抛光浆料的添加剂
公开(公告)号：US20120187333A1
公开(公告)日：2012-07-26
申请号：US13420815
申请日：2012-03-15
申请人： Gi Ra Yi , Jong Pil Kim , Jung Hee Lee , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
发明人： Gi Ra Yi , Jong Pil Kim , Jung Hee Lee , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.
摘要翻译：公开了一种用于同时抛光阳离子充电材料和阴离子充电材料的助剂，其中助剂包含聚电解质盐，该聚电解质盐包含：（a）重均分子量为2,000〜50,000的线性聚电解质与接枝型聚电解质，其重均分子量为1,000〜20,000，包含骨架和侧链; 和（b）基本材料。还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。包含线性聚电解质与接枝型聚电解质的混合物的佐剂使得可以使用单独的线性聚电解质与CMP浆料相比提高抛光选择性，并且通过控制线性聚电解质与接枝型聚电解质。

52. 发明授权

US08147711B2 Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry 有权
标题翻译：用于控制抛光选择性和化学机械抛光浆料的辅助剂
公开(公告)号：US08147711B2
公开(公告)日：2012-04-03
申请号：US12086155
申请日：2006-12-08
申请人： Jung Hee Lee , Jong Pil Kim , Gi Ra Yi , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
发明人： Jung Hee Lee , Jong Pil Kim , Gi Ra Yi , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.
摘要翻译：公开了用于在与阴离子充电材料同时研磨阳离子充电材料时控制抛光选择性的佐剂。还公开了包含佐剂的CMP浆料。助剂包括：（a）在阳离子充电材料上形成吸附层的聚电解质，以增加阴离子充电材料的抛光选择性; （b）基本材料; 和（c）氟系化合物。当将用于控制根据本发明的CMP浆料的抛光选择性的佐剂应用于CMP工艺时，可以增加氧化硅层的抛光选择性，以获得CMP浆料的均匀粒度，以稳定化在外力下的粘度并且在抛光过程中最小化微细纹的产生。因此，根据本发明的用于CMP浆料的助剂可以在制造非常大规模的集成半导体期间提高可靠性和生产率。

53. 发明申请

US20120034713A1 PROCESS, VOLTAGE, TEMPERATURE SENSOR 有权
标题翻译：过程，电压，温度传感器
公开(公告)号：US20120034713A1
公开(公告)日：2012-02-09
申请号：US13275721
申请日：2011-10-18
申请人： Jung Hee Lee
发明人： Jung Hee Lee
IPC分类号： H01L21/66
CPC分类号： G01R31/2601 , H03F1/30 , H03F2200/447
摘要： An integrated circuit includes a process sensor, a temperature sensor, and a voltage sensor. The process sensor is configured to sense a process parameter indicative of a semiconductor process by which the integrated circuit is formed and, based upon the sensed process parameter, to provide a characterization of the semiconductor process to the output of the process sensor. The temperature sensor is configured to provide an indication of a temperature of the integrated circuit to an output of the temperature sensor and the voltage sensor is configured to provide an indication of a power supply voltage level of the integrated circuit to an output of the voltage sensor. The output of the process sensor is coupled to at least one of the temperature sensor and the voltage sensor to compensate at least one of the indication of the temperature and the indication of the power supply voltage level.
摘要翻译：集成电路包括过程传感器，温度传感器和电压传感器。过程传感器被配置为感测指示形成集成电路的半导体工艺的工艺参数，并且基于所感测的工艺参数，以提供对工艺传感器的输出的半导体工艺的表征。温度传感器被配置为提供集成电路的温度到温度传感器的输出的指示，并且电压传感器被配置为提供集成电路的电源电压电平到电压传感器的输出的指示。过程传感器的输出耦合到温度传感器和电压传感器中的至少一个，以补偿温度指示和电源电压电平指示中的至少一个。

54. 发明申请

US20110254057A1 NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING OF THE SAME 有权
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US20110254057A1
公开(公告)日：2011-10-20
申请号：US12842303
申请日：2010-07-23
申请人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
发明人： Woo Chul Jeon , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/205 , H01L21/20 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： Disclosed herein is a nitride based semiconductor device. The nitride based semiconductor device includes: a base substrate; an epitaxial growth layer disposed on the base substrate and having a defect generated due to lattice disparity with the base substrate; a leakage current barrier covering the epitaxial growth layer while filling the defect; and an electrode part disposed on the epitaxial growth layer.
摘要翻译：本文公开了一种氮化物基半导体器件。氮化物基半导体器件包括：基底; 外延生长层，其设置在所述基底基板上，并且由于与所述基底基板的晶格差异而产生缺陷; 在填充缺陷的同时覆盖外延生长层的漏电流屏障; 以及设置在外延生长层上的电极部分。

55. 发明申请

US20110233520A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233520A1
公开(公告)日：2011-09-29
申请号：US12964218
申请日：2010-12-09
申请人： Woo Chul JEON , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
发明人： Woo Chul JEON , Ki Yeol Park , Young Hwan Park , Jung Hee Lee
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/0847 , B82Y10/00 , H01L29/15 , H01L29/2003 , H01L29/41766 , H01L29/51 , H01L29/518 , H01L29/7787 , H01L29/812
摘要： There is provided a semiconductor device including a base substrate; a semiconductor layer formed on the base substrate and having a mesa protrusion including a receiving groove; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer, the source electrode having a source leg and the drain electrode having a drain leg; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part received into the receiving groove. The mesa protrusion has a superlattice structure including at least one trench at an interface between the mesa protrusion and the source electrode and between the mesa protrusion and the drain electrode, respectively, and the source leg and the drain leg are received in the trench.
摘要翻译：提供了一种包括基底的半导体器件; 半导体层，形成在所述基底基板上，并且具有包括接收槽的台面突起; 源电极和漏电极，设置成在半导体层上彼此间隔开，源电极具有源极脚，漏电极具有排放支路; 以及与源电极和漏电极绝缘并且具有容纳在接收槽中的凹部的栅电极。台面突起具有超晶格结构，其包括分别在台面突起和源电极之间以及台面突起和漏电极之间的界面处的至少一个沟槽，并且源极腿和排出支路分别容纳在沟槽中。

56. 发明申请

US20110057257A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110057257A1
公开(公告)日：2011-03-10
申请号：US12654942
申请日：2010-01-08
申请人： Ki Yeol Park , Jung Hee Lee , Jong Bong Ha , Young Hwan Park , Woo Chul Jeon
发明人： Ki Yeol Park , Jung Hee Lee , Jong Bong Ha , Young Hwan Park , Woo Chul Jeon
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/4236 , H01L29/0657 , H01L29/2003 , H01L29/42376 , H01L29/66462 , H01L29/7787
摘要： The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a recess structure formed thereon; a gate structure covering the recess structure; a source electrode and a drain electrode which are disposed to be spaced apart from each other with respect to the gate structure interposed therebetween, on the semiconductor layer, wherein the semiconductor layer having an upper layer whose thickness is increased toward a first direction facing the drain electrode from the gate structure.
摘要翻译：本发明提供一种半导体器件，包括：基底; 半导体层，其设置在所述基底基板上并具有形成在其上的凹部结构; 覆盖所述凹部结构的栅极结构; 源极电极和漏极电极，被设置成相对于介于它们之间的栅极结构彼此间隔开，在半导体层上，其中半导体层的厚度朝着面向漏极的第一方向上增加电极从栅极结构。

57. 发明申请

US20090267020A1 Adjuvant for Controlling Polishing Selectivity and Chemical Mechanical Polishing Slurry 有权
标题翻译：控制抛光选择性和化学机械抛光浆料的辅助剂
公开(公告)号：US20090267020A1
公开(公告)日：2009-10-29
申请号：US12086155
申请日：2006-12-08
申请人： Jung Hee Lee , Jong Pil Kim , Gi Ra Yi , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
发明人： Jung Hee Lee , Jong Pil Kim , Gi Ra Yi , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
IPC分类号： C09K3/14
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.
摘要翻译：公开了用于在与阴离子充电材料同时研磨阳离子充电材料时控制抛光选择性的佐剂。还公开了包含佐剂的CMP浆料。助剂包括：（a）在阳离子充电材料上形成吸附层的聚电解质，以增加阴离子充电材料的抛光选择性; （b）基本材料; 和（c）氟系化合物。当将用于控制根据本发明的CMP浆料的抛光选择性的佐剂应用于CMP工艺时，可以增加氧化硅层的抛光选择性，以获得CMP浆料的均匀粒度，以稳定化在外力下的粘度并且在抛光过程中最小化微细纹的产生。因此，根据本发明的用于CMP浆料的助剂可以在制造非常大规模的集成半导体期间提高可靠性和生产率。

58. 发明授权

US07436481B2 Liquid crystal display device having digitizer and method for fabricating the same 有权
标题翻译：具有数字化仪的液晶显示装置及其制造方法
公开(公告)号：US07436481B2
公开(公告)日：2008-10-14
申请号：US10736665
申请日：2003-12-17
申请人： Dong Jac You , Jung Hee Lee , Nam Do Son , Sung Hoon Lee
发明人： Dong Jac You , Jung Hee Lee , Nam Do Son , Sung Hoon Lee
IPC分类号： G02F1/1345
CPC分类号： G06F3/046 , G02F1/13338 , G02F2202/28
摘要： A liquid crystal display device having a digitizer and a method for fabricating the same are disclosed in the present invention. The liquid crystal display device includes a liquid crystal display device module, a printed circuit board located in close proximity to a support main of the liquid crystal display device module, and a fixing device to insert a digitizer.
摘要翻译：在本发明中公开了具有数字转换器及其制造方法的液晶显示装置。液晶显示装置包括液晶显示装置模块，位于液晶显示装置模块的支撑主体附近的印刷电路板和插入数字化仪的固定装置。

59. 发明申请

US20080150086A1 Nitride based semiconductor device and process for preparing the same 审中-公开
公开(公告)号：US20080150086A1
公开(公告)日：2008-06-26
申请号：US11987706
申请日：2007-12-04
申请人： Jae Hoon Lee , Jung Hee Lee , Hyun Ick Cho
发明人： Jae Hoon Lee , Jung Hee Lee , Hyun Ick Cho
IPC分类号： H01L29/20
CPC分类号： C30B29/403 , C30B25/02 , C30B29/406 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02636
摘要： A process for preparing a nitride based semiconductor device in accordance with the present invention comprises growing a high temperature AlN single crystal layer on a substrate; growing a first GaN layer on the high temperature AlN single crystal layer in a first V/III ratio, under a first pressure of 300 Torr or more, such that the predominant direction of growth is the lateral direction; and growing a second GaN layer on the first GaN layer in a second V/III ratio lower than the first V/III ratio, under a second pressure lower than the first pressure such that the predominant direction of growth is the lateral direction.

60. 发明授权

US07319064B2 Nitride based semiconductor device and process for preparing the same 有权
标题翻译：基于氮化物的半导体器件及其制备方法
公开(公告)号：US07319064B2
公开(公告)日：2008-01-15
申请号：US11203132
申请日：2005-08-15
申请人： Jae Hoon Lee , Jung Hee Lee , Hyun Ick Cho
发明人： Jae Hoon Lee , Jung Hee Lee , Hyun Ick Cho
IPC分类号： H01L21/28
CPC分类号： C30B29/403 , C30B25/02 , C30B29/406 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02636
摘要： A process for preparing a nitride based semiconductor device in accordance with the present invention comprises growing a high temperature AlN single crystal layer on a substrate; growing a first GaN layer on the high temperature AlN single crystal layer in a first V/III ratio, under a first pressure of 300 Torr or more, such that the predominant direction of growth is the lateral direction; and growing a second GaN layer on the first GaN layer in a second V/III ratio lower than the first V/III ratio, under a second pressure lower than the first pressure such that the predominant direction of growth is the lateral direction.
摘要翻译：根据本发明的制备氮化物基半导体器件的方法包括在衬底上生长高温AlN单晶层; 在300Torr以上的第一压力下以第一V / III比在高温AlN单晶层上生长第一GaN层，使得主要生长方向为横向; 以及在比所述第一压力低的第二压力下，以比所述第一V / III比低的第二V / III比在所述第一GaN层上生长第二GaN层，使得所述主要生长方向为横向。

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