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51. 发明申请

US20150221481A1 ELECTROSTATIC CHUCK WITH MAGNETIC CATHODE LINER FOR CRITICAL DIMENSION (CD) TUNING 审中-公开
标题翻译：带静音卡带的静电卡盘，用于关键尺寸（CD）调谐
公开(公告)号：US20150221481A1
公开(公告)日：2015-08-06
申请号：US14169528
申请日：2014-01-31
申请人： Michael D. Willwerth , Chih-Hsun Hsu , Valentin N. Todorow
发明人： Michael D. Willwerth , Chih-Hsun Hsu , Valentin N. Todorow
IPC分类号： H01J37/32 , H01L21/67 , H01L21/683
CPC分类号： H01J37/32715 , H01J37/32568 , H01J37/3266 , H01J37/32669 , H01J37/32697 , H01L21/6833
摘要： Electrostatic chucks with magnetic cathode liners for critical dimension (CD) tuning are described. For example, an electrostatic chuck (ESC) includes a cathode region. A wafer processing region is disposed above the cathode region. A magnetic cathode liner surrounds the cathode region, below the wafer processing region. The magnetic cathode liner is configured to provide magnetic field tuning capability for the ESC.
摘要翻译：描述了具有用于关键尺寸（CD）调谐的磁性阴极衬垫的静电吸盘。例如，静电卡盘（ESC）包括阴极区域。晶圆处理区域设置在阴极区域的上方。磁性阴极衬垫包围在晶片加工区域下面的阴极区域。磁性阴极衬套被配置为为ESC提供磁场调谐能力。

52. 发明授权

US08492980B2 Methods for calibrating RF power applied to a plurality of RF coils in a plasma processing system 有权
标题翻译：用于校准施加到等离子体处理系统中的多个RF线圈的RF功率的方法
公开(公告)号：US08492980B2
公开(公告)日：2013-07-23
申请号：US13090916
申请日：2011-04-20
申请人： Samer Banna , Valentin N. Todorow , Tse-Chiang Wang , Xing Lin
发明人： Samer Banna , Valentin N. Todorow , Tse-Chiang Wang , Xing Lin
IPC分类号： H05B31/26
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/32926 , H01J37/3299
摘要： Methods for calibrating RF power applied to a plurality of RF coils are provided. In some embodiments, a method of calibrating RF power applied to a first and second RF coil of a process chamber having a power divider to control a first ratio equal to a first magnitude of RF power provided to the first RF coil divided by a second magnitude of RF power provided to the second RF coil, may include measuring a plurality of first ratios over a range of setpoint values of the power divider, comparing the plurality of measured first ratios to a plurality of reference first ratios, and adjusting an actual value of the power divider at a given setpoint value such that the first ratio of the power divider at the given setpoint matches the corresponding reference first ratio to within a first tolerance level.
摘要翻译：提供了用于校准施加到多个RF线圈的RF功率的方法。在一些实施例中，一种校准施加到具有功率分配器的处理室的第一和第二RF线圈的RF功率的方法，以控制提供给第一RF线圈的第一幅度等于第二幅度的第一比率提供给第二RF线圈的RF功率可以包括在功率分配器的设定值的范围内测量多个第一比值，将多个测量的第一比值与多个参考第一比较，并且调整实际值所述功率分配器在给定设定点值处，使得给定设定点处的功率分配器的第一比例与相应的参考第一比率匹配到第一容限水平内。

53. 发明授权

US08360003B2 Plasma reactor with uniform process rate distribution by improved RF ground return path 有权
标题翻译：等离子体反应器具有均匀的加工速率分布，通过改进的射频接地回路
公开(公告)号：US08360003B2
公开(公告)日：2013-01-29
申请号：US12501966
申请日：2009-07-13
申请人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
发明人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/16 , H01J37/321 , H01J37/32623 , H01J37/32633 , H01J37/32642 , H01L31/18
摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.
摘要翻译：在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度在房间里侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

54. 发明授权

US08299391B2 Field enhanced inductively coupled plasma (Fe-ICP) reactor 有权
标题翻译：场增强电感耦合等离子体（Fe-ICP）反应器
公开(公告)号：US08299391B2
公开(公告)日：2012-10-30
申请号：US12182342
申请日：2008-07-30
申请人： Valentin N. Todorow , Samer Banna , Kartik Ramaswamy , Michael D. Willwerth
发明人： Valentin N. Todorow , Samer Banna , Kartik Ramaswamy , Michael D. Willwerth
IPC分类号： B23K10/00
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/321
摘要： Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly.
摘要翻译：本文提供了场增强电感耦合等离子体反应器的实施例及其使用方法。在一些实施例中，场增强感应耦合等离子体处理系统可包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。等离子体源组件包括一个或多个线圈，其配置成将RF能量感应耦合到处理室中以在其中形成和维持等离子体，一个或多个电极被配置为将RF能量电容耦合到处理室中以在其中形成等离子体，其中，或多个电极电耦合到所述一个或多个线圈中的一个，以及耦合到所述一个或多个感应线圈和所述一个或多个电极的RF发生器。在一些实施例中，加热器元件可以设置在电介质盖和等离子体源组件之间。

55. 发明授权

US07737042B2 Pulsed-plasma system for etching semiconductor structures 有权
标题翻译：用于蚀刻半导体结构的脉冲等离子体系统
公开(公告)号：US07737042B2
公开(公告)日：2010-06-15
申请号：US11678041
申请日：2007-02-22
申请人： Tae Won Kim , Kyeong-Tae Lee , Alexander Paterson , Valentin N. Todorow , Shashank C. Deshmukh
发明人： Tae Won Kim , Kyeong-Tae Lee , Alexander Paterson , Valentin N. Todorow , Shashank C. Deshmukh
IPC分类号： H01L21/302
CPC分类号： H01L21/32136 , H01L21/31116 , H01L21/31122 , H01L21/67069
摘要： A pulsed plasma system for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. The ON state of a duty cycle is of a duration sufficiently short to substantially inhibit micro-loading in a reaction region adjacent to the sample, while the OFF state of the duty cycle is of a duration sufficiently long to substantially enable removal of a set of etch by-products from the reaction region. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.
摘要翻译：描述了用于蚀刻半导体结构的脉冲等离子体系统。在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。占空比的导通状态具有足够短的持续时间，从而基本上抑制了与样品相邻的反应区域中的微负荷，同时占空比的关闭状态持续足够长，从而基本上能够去除一组蚀刻来自反应区域的副产物。在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。

56. 发明授权

US06414648B1 Plasma reactor having a symmetric parallel conductor coil antenna 有权
标题翻译：具有对称并联导体线圈天线的等离子体反应器
公开(公告)号：US06414648B1
公开(公告)日：2002-07-02
申请号：US09611168
申请日：2000-07-06
申请人： John Holland , Valentin N. Todorow , Michael Barnes
发明人： John Holland , Valentin N. Todorow , Michael Barnes
IPC分类号： C23C1600
CPC分类号： H01J37/321
摘要： The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. A RF plasma source power supply is connected across each of the plural conductors. In another embodiment, the antenna is a solenoidal segmented parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric side-by-side helical solenoids, each helical solenoid being offset by a distance on the order of a conductor width of the plurality of conductors from the nearest other helical solenoids in a direction perpendicular to the axis of symmetry, whereby each helical solenoid has slightly different diameter.
摘要翻译：在一个实施例中的本发明在用于处理半导体工件的等离子体反应器中实现。反应器包括具有侧壁和天花板的真空室，腔室内的工件支撑基座，并且大致面对天花板，能够将工艺气体供应到室中的气体入口和覆盖在天花板上的螺线管交错的并行导体线圈天线并且包括缠绕在大致垂直于天花板的相应同心螺旋螺线管中的对称轴线的第一多个导体，其具有来自对称轴线的至少几乎均匀的横向位移，每个螺旋螺线管在与另一个螺旋螺线管平行的方向上偏离对称轴。 RF等离子体源电源连接在多个导体中的每一个上。在另一个实施例中，天线是覆盖天花板的螺线管分段并行导体线圈天线，并且包括缠绕在大致垂直于天花板的对称轴对称的第一多个导体，每个螺旋螺线管被偏置在垂直于对称轴的方向上距离最近的其他螺旋螺线管的多根导体的导体宽度的数量级的距离，由此每个螺旋螺线管具有略微不同的直径。

57. 发明授权

US06409933B1 Plasma reactor having a symmetric parallel conductor coil antenna 有权
标题翻译：具有对称并联导体线圈天线的等离子体反应器
公开(公告)号：US06409933B1
公开(公告)日：2002-06-25
申请号：US09610800
申请日：2000-07-06
申请人： John Holland , Valentin N. Todorow , Michael Barnes
发明人： John Holland , Valentin N. Todorow , Michael Barnes
IPC分类号： H01L2100
CPC分类号： H01J37/321
摘要： The invention is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of supplying a process gas into the chamber and a solenoidal interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. An RF plasma source power supply is connected across each of the plural conductors.
摘要翻译：本发明在用于处理半导体工件的等离子体反应器中实现。反应器包括具有侧壁和天花板的真空室，腔室内的工件支撑基座，并且大致面对天花板，能够将工艺气体供应到室中的气体入口和覆盖在天花板上的螺线管交错的并行导体线圈天线并且包括缠绕在大致垂直于天花板的相应同心螺旋螺线管中的对称轴线的第一多个导体，其具有来自对称轴线的至少几乎均匀的横向位移，每个螺旋螺线管在与另一个螺旋螺线管平行的方向上偏离对称轴。 RF等离子体源电源连接在多个导体中的每一个上。

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