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51. 发明申请

US20080014664A1 MANUFACTURING METHOD OF LIGHT EMITTING DIODE 审中-公开
标题翻译：发光二极管的制造方法
公开(公告)号：US20080014664A1
公开(公告)日：2008-01-17
申请号：US11862193
申请日：2007-09-27
申请人： Cheng-Yi Liu , Shih-Chieh Hsu
发明人： Cheng-Yi Liu , Shih-Chieh Hsu
IPC分类号： H01L33/00
CPC分类号： H01L33/0079
摘要： A method for fabricating a light emitting diode (LED) is provided. A first-type doped semiconductor layer, a light emitting layer and a second-type doped semiconductor layer are formed on an epitaxy substrate sequentially. Then, a gold layer is formed on the second-type doped semiconductor layer. Next, a bonding substrate is provided. The bonding substrate includes a silicon substrate and a germanium-contained layer disposed on the silicon substrate. Then, a bonding process is performed on the bonding substrate and the gold layer. Next, the epitaxy substrate is removed. Accordingly, a LED with better reliability and light-emitting efficiency can be made. Moreover, a LED is also provided.
摘要翻译：提供一种制造发光二极管（LED）的方法。依次在外延基板上形成第一掺杂半导体层，发光层和第二掺杂半导体层。然后，在第二掺杂半导体层上形成金层。接下来，提供接合基板。接合基板包括硅基板和设置在硅基板上的含锗层。然后，对接合基板和金层进行接合处理。接下来，除去外延基板。因此，可以实现具有更好的可靠性和发光效率的LED。此外，还提供了LED。

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