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    • 60. 发明申请
    • EFAB methods including controlled mask to substrate mating
    • EFAB方法包括受控掩模与底物交配
    • US20050205430A1
    • 2005-09-22
    • US10997709
    • 2004-11-24
    • Jeffrey Thompson
    • Jeffrey Thompson
    • C25D5/02C25D5/10
    • C25D1/003C25D5/022C25D5/10
    • Embodiments include treatment of substrates, formation of structures, and formation of multilayer structures using contact masks where a controlled mating of the contact masks and substrates is used. Some embodiments involve controlled mating at speeds equal to or less than 10 microns/second, more preferably equal to or less than 5 microns/second, and even more preferably equal to or less than 1 micron/second. Some embodiments involve controlled mating that uses a higher speed of approach when further away followed by a slower speed of approach to cause mating. Some embodiments involve controlled mating that uses a higher speed of approach when making preliminary contact, then backing away a desired distance, and then making a mating approach that causes mating while using a slower mating speed.
    • 实施例包括基底的处理,结构的形成,以及使用接触掩模和基底的受控配合的接触掩模的多层结构的形成。 一些实施例涉及以等于或小于10微米/秒,更优选等于或小于5微米/秒,甚至更优选等于或小于1微米/秒的速度的受控配合。 一些实施例涉及受控配合,当进一步远离时,使用较高的接近速度,随后较慢的接近速度导致配合。 一些实施例涉及受控配合,其在进行初步接触时使用更高的接近速度,然后退回期望的距离,然后进行使用较慢配合速度时配合的配合方法。