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51. 发明授权

US08048783B2 Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same 有权
标题翻译：形成多晶硅层的方法和用于其的原子层沉积装置
公开(公告)号：US08048783B2
公开(公告)日：2011-11-01
申请号：US12714252
申请日：2010-02-26
申请人： Yun-Mo Chung , Ki-Yong Lee , Min-Jae Jeong , Jin-Wook Seo , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Tae-Hoon Yang , Ji-Su Ahn , Young-Dae Kim , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Maxim Lisachenko
发明人： Yun-Mo Chung , Ki-Yong Lee , Min-Jae Jeong , Jin-Wook Seo , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Tae-Hoon Yang , Ji-Su Ahn , Young-Dae Kim , Byoung-Keon Park , Kil-Won Lee , Dong-Hyun Lee , Sang-Yon Yoon , Jong-Ryuk Park , Bo-Kyung Choi , Maxim Lisachenko
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , C23C14/04 , H01L21/02422 , H01L21/02488 , H01L21/02672
摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.
摘要翻译：一种形成多晶硅层的方法和用于其的原子层沉积装置。该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

52. 发明授权

US07999261B2 Thin film transistor, method of fabricating the same, and organic light emitting diode display device having the TFT 有权
标题翻译：薄膜晶体管，其制造方法以及具有该TFT的有机发光二极管显示装置
公开(公告)号：US07999261B2
公开(公告)日：2011-08-16
申请号：US12357513
申请日：2009-01-22
申请人： Ji-Su Ahn , Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Kil-Won Lee , Ki-Yong Lee , Sung-Chul Kim
发明人： Ji-Su Ahn , Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Kil-Won Lee , Ki-Yong Lee , Sung-Chul Kim
IPC分类号： H01L29/10
CPC分类号： H01L29/458 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/66765
摘要： A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT including a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer and crystallized using a metal catalyst, and source and drain electrodes disposed on the semiconductor layer and electrically connected to source and drain regions of the semiconductor layer. A second metal is diffused into a surface region of the semiconductor layer, to getter the metal catalyst from a channel region of the semiconductor layer. The second metal can have a lower diffusion coefficient in silicon than the metal catalyst.
摘要翻译：薄膜晶体管（TFT）及其制造方法以及具有TFT的有机发光二极管（OLED）显示装置，TFT包括基板，设置在基板上的栅极电极，设置在基板上的栅极绝缘层栅电极，设置在栅绝缘层上并使用金属催化剂结晶的半导体层，以及设置在半导体层上并电连接到半导体层的源极和漏极区的源极和漏极。第二金属被扩散到半导体层的表面区域中，以从半导体层的沟道区域吸收金属催化剂。第二种金属在硅中的扩散系数可以低于金属催化剂。

53. 发明申请

US20110120859A1 SPUTTERING APPARATUS 有权
标题翻译：溅射装置
公开(公告)号：US20110120859A1
公开(公告)日：2011-05-26
申请号：US12948650
申请日：2010-11-17
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park , Yun-Mo Chung , Dong-Hyun Lee , Kil-Won Lee , Jae-Wan Jung , Jong-Ryuk Park , Bo-Kyung Choi , Won-Bong Baek , Byung-Soo So , Jong-Won Hong , Min-Jae Jeong , Heung-Yeol Na , Ivan Maidanchuk , Eu-Gene Kang , Seok-Rak Chang
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park , Yun-Mo Chung , Dong-Hyun Lee , Kil-Won Lee , Jae-Wan Jung , Jong-Ryuk Park , Bo-Kyung Choi , Won-Bong Baek , Byung-Soo So , Jong-Won Hong , Min-Jae Jeong , Heung-Yeol Na , Ivan Maidanchuk , Eu-Gene Kang , Seok-Rak Chang
IPC分类号： C23C14/34 , C23C14/18
CPC分类号： C23C14/3407 , C23C14/185 , C23C14/34 , H01J37/3417 , H01J37/3435 , H01J37/3438
摘要： Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a length of the first shield is less than 3 cm.
摘要翻译：提供一种溅射装置，其以非常低的浓度将金属催化剂沉积在非晶硅层上以使非晶硅结晶，并且特别地最小化由预溅射工艺引起的金属催化剂的不均匀性而不降低工艺效率。该溅射装置以非常低的浓度提高沉积在非晶硅层上的金属催化剂的均匀性。溅射装置包括具有第一和第二区域的处理室，位于处理室内的金属靶，移动金属靶的靶转印单元，具有用于控制从金属靶排出的金属催化剂的行进方向的第一屏蔽件，以及设置在所述第二区域中以能够面对所述金属靶的衬底保持器。作为装载在基板保持架上的基板与金属对象物之间的距离的线性距离与第一屏蔽件的长度之间的距离差小于3cm。

54. 发明授权

US07838352B2 Thin film transistor and method for fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07838352B2
公开(公告)日：2010-11-23
申请号：US11493044
申请日：2006-07-25
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
IPC分类号： H01L21/84
CPC分类号： H01L29/78654 , H01L29/66757 , H01L29/66772 , H01L29/78675 , H01L29/78696
摘要： A thin film transistor that has improved characteristics and uniformity is developed by uniformly controlling low concentration of crystallization catalyst and controlling crystallization position so that no seed exists and no grain boundary exists, or one grain boundary exists in a channel layer of the thin film transistor. The thin film transistor includes a substrate; a semiconductor layer pattern which is formed on the substrate, the semiconductor layer pattern having a channel layer of which no seed exists and no grain boundary exists; a gate insulating film formed on the semiconductor layer pattern; and a gate electrode formed on the gate insulating film. A method for fabricating the thin film transistor includes forming an amorphous silicon layer on a substrate; forming a semiconductor layer pattern having a channel layer in which no seed exists and no grain boundary exists by crystallizing and patterning the amorphous silicon layer; forming a gate insulating film on the semiconductor layer pattern; and forming a gate electrode on the gate insulating film.
摘要翻译：通过均匀控制结晶催化剂的低浓度和控制结晶位置，使得不存在晶种并且不存在晶界，或者在薄膜晶体管的沟道层中存在一个晶界，开发出具有改善的特性和均匀性的薄膜晶体管。薄膜晶体管包括基板; 形成在所述基板上的半导体层图案，所述半导体层图案具有不存在种子的沟道层，并且不存在晶界; 形成在半导体层图案上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。一种薄膜晶体管的制造方法，包括在基板上形成非晶硅层; 形成具有不存在种子的沟道层的半导体层图案，并且通过对非晶硅层进行结晶和图案化而不存在晶界; 在半导体层图案上形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

55. 发明申请

US20100263594A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20100263594A1
公开(公告)日：2010-10-21
申请号：US12714019
申请日：2010-02-26
申请人： Heung-Yeol NA , Ki-Yong Lee , Jin-Wook Seo , Min-Jae Jeong , Jong-Won Hong , Seok-Rak Chang , Yun-Mo Chung , Tae-Hoon Yang , Byung-Soo So , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Won-Bong Baek , Jae-Wan Jung
发明人： Heung-Yeol NA , Ki-Yong Lee , Jin-Wook Seo , Min-Jae Jeong , Jong-Won Hong , Seok-Rak Chang , Yun-Mo Chung , Tae-Hoon Yang , Byung-Soo So , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Won-Bong Baek , Jae-Wan Jung
IPC分类号： C23C16/00
CPC分类号： H01L21/67109
摘要： A substrate processing apparatus that forms thin films on a plurality of substrates and thermally processes the substrates, by uniformly heating the substrates. The substrate processing apparatus includes a processing chamber, a boat in which substrates are stacked, an external heater located outside of the processing chamber, a feeder to move the boat into and out of the processing chamber, a lower heater located below the feeder, and a central heater located in the center of the boat.
摘要翻译：一种基板处理装置，其通过均匀加热基板，在多个基板上形成薄膜并对基板进行热处理。基板处理装置包括处理室，堆叠基板的船，位于处理室外的外部加热器，将船移入和移出处理室的进给器，位于进料器下方的下加热器，以及位于船中心的中央加热器。

56. 发明申请

US20100163885A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管，其制造方法和有机发光二极管显示装置，包括薄膜晶体管
公开(公告)号：US20100163885A1
公开(公告)日：2010-07-01
申请号：US12649718
申请日：2009-12-30
申请人： Byoung-Keon PARK , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee , Dong-Hyun Lee , Maxim Lisachenko , Ki-Yong Lee
发明人： Byoung-Keon PARK , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee , Dong-Hyun Lee , Maxim Lisachenko , Ki-Yong Lee
IPC分类号： H01L33/00 , H01L29/786 , H01L21/336 , H01L29/04 , H01L21/20
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1281 , H01L29/04 , H01L29/78606
摘要： A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and including source and drain regions, each having a first metal catalyst crystallization region and a second metal catalyst crystallization region, and a channel region having the second metal catalyst crystallization region, a gate electrode disposed in a position corresponding to the channel region of the semiconductor layer, a gate insulating layer interposed between the semiconductor layer and the gate electrode to electrically insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically insulated from the gate electrode and electrically connected to the source and drain regions, respectively. An OLED display device includes the thin film transistor and a first electrode, an organic layer, and a second electrode electrically connected to the source and drain electrodes.
摘要翻译：薄膜晶体管（TFT）包括衬底，设置在衬底上并包括源区和漏区的半导体层，每个具有第一金属催化剂结晶区和第二金属催化剂结晶区，以及具有第二金属催化剂的沟道区结晶区域，设置在与半导体层的沟道区域对应的位置的栅极电极，插入在半导体层和栅电极之间以将半导体层与栅电极电绝缘的栅极绝缘层，以及电极和漏极电极与栅电极绝缘并分别电连接到源极和漏极区。 OLED显示装置包括薄膜晶体管和电连接到源极和漏极的第一电极，有机层和第二电极。

57. 发明申请

US20100163855A1 METHOD OF FABRICATING POLYSILICON, THIN FILM TRANSISTOR, METHOD OF FABRICATING THE THIN FILM TRANSISTOR, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR 失效
标题翻译：制造多晶硅，薄膜晶体管的方法，制造薄膜晶体管的方法和包括薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US20100163855A1
公开(公告)日：2010-07-01
申请号：US12649980
申请日：2009-12-30
申请人： Dong-Hyun LEE , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Maxim Lisachenko , Byoung-Keon Park , Kil-Won Lee , Jae-Wan Jung
发明人： Dong-Hyun LEE , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Maxim Lisachenko , Byoung-Keon Park , Kil-Won Lee , Jae-Wan Jung
IPC分类号： H01L51/50 , H01L29/786 , H01L21/336 , H01L33/00
CPC分类号： H01L29/66765 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L29/66757 , H01L29/78696
摘要： A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device equipped with the thin film transistor of which the thin film transistor includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer and a second semiconductor layer disposed on the buffer layer, a gate electrode insulated from the first semiconductor layer and the second semiconductor layer, a gate insulating layer insulating the gate electrode from the first semiconductor layer and the second semiconductor layer, and source and drain electrodes insulated from the gate electrode and partially connected to the second semiconductor layer, wherein the second semiconductor layer is disposed on the first semiconductor layer.
摘要翻译：薄膜晶体管，薄膜晶体管的制造方法以及配备有薄膜晶体管的有机发光二极管（OLED）显示装置，其中薄膜晶体管包括基板，设置在基板上的缓冲层，第一半导体层和设置在缓冲层上的第二半导体层，与第一半导体层和第二半导体层绝缘的栅电极，将栅电极与第一半导体层和第二半导体层绝缘的栅极绝缘层，以及源极以及与栅电极绝缘并部分地连接到第二半导体层的漏电极，其中第二半导体层设置在第一半导体层上。

58. 发明授权

US07683373B2 Thin film transistor and method of fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07683373B2
公开(公告)日：2010-03-23
申请号：US11017688
申请日：2004-12-22
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
IPC分类号： H01L31/036
CPC分类号： H01L29/66757 , H01L27/1277 , H01L27/1281 , H01L29/04 , H01L29/78675
摘要： Provided are a thin film transistor and method of fabricating the same, in which an amorphous silicon layer is formed on a substrate, a capping layer containing a metal catalyst having a different concentration according to its thickness is formed on the amorphous silicon layer, the capping layer is patterned to form a capping layer pattern, and the amorphous silicon layer is crystallized, such that the density and position of seeds formed at an interface between the amorphous silicon layer and the capping layer pattern is controlled, thereby improving the size and uniformity of grains, and in which polycrystalline silicon of desired size and uniformity is selectively formed at a desired position by one crystallization process, resulting in a thin film transistor having excellent and desired properties. The thin film transistor includes a substrate; a plurality of semiconductor layers formed on the substrate, the semiconductor layers including grains of different sizes obtained by crystallizing an amorphous silicon layer beneath a capping layer into a polycrystalline silicon layer using the capping layer pattern containing a metal catalyst with a predetermined distribution and having a predetermined height and width; and a gate insulating layer, a gate electrode, an interlayer insulting layer, and source and drain electrodes formed on the semiconductor layers. Therefore, the crystallization process is performed using the capping layer pattern containing the metal catalyst, which has concentration and distribution varying depending on the thickness of the capping layer pattern, thereby improving the size and uniformity of grains. In addition, the polycrystalline silicon of desired size and uniformity is selectively formed in a desired position by one crystallization process, resulting in the thin film transistor having excellent and desired properties.
摘要翻译：本发明提供一种薄膜晶体管及其制造方法，其中在基板上形成非晶硅层，在非晶硅层上形成包含不同浓度的金属催化剂的覆盖层图案化以形成覆盖层图案，并且使非晶硅层结晶化，使得在非晶硅层和覆盖层图案之间的界面处形成的晶种的密度和位置受到控制，从而提高了非晶硅层的尺寸和均匀性晶粒，并且其中通过一次结晶工艺在期望的位置选择性地形成所需尺寸和均匀性的多晶硅，导致具有优异和期望性能的薄膜晶体管。薄膜晶体管包括基板; 形成在所述基板上的多个半导体层，所述半导体层包括通过使用包含具有预定分布的金属催化剂的覆盖层图案将覆盖层下面的非晶硅层结晶成多晶硅层而获得的不同尺寸的晶粒，并且具有预定高度和宽度; 以及形成在半导体层上的栅极绝缘层，栅极电极，层间绝缘层以及源极和漏极。因此，使用含有金属催化剂的覆盖层图案进行结晶化处理，其具有随封盖层图案的厚度而变化的浓度和分布，从而提高了晶粒的尺寸和均匀性。此外，所需尺寸和均匀性的多晶硅通过一次结晶工艺选择性地形成在期望的位置，导致薄膜晶体管具有优异和期望的性能。

59. 发明申请

US20090001380A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME AND METHOD OF FABRICATING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法，包括其的有机发光二极管显示装置及其制造方法
公开(公告)号：US20090001380A1
公开(公告)日：2009-01-01
申请号：US12163074
申请日：2008-06-27
申请人： Tae-Hoon Yang , Byoung-Keon Park , Jin-Wook Seo , Ki-Yong Lee , Kil-Won Lee
发明人： Tae-Hoon Yang , Byoung-Keon Park , Jin-Wook Seo , Ki-Yong Lee , Kil-Won Lee
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L27/12 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1277
摘要： A thin film transistor includes a substrate, a semiconductor layer disposed on the substrate, including a channel region and source and drain regions and crystallized using a metal catalyst, a gate electrode disposed to correspond to a predetermined region of the semiconductor layer, a gate insulating layer disposed between the gate electrode and the semiconductor layer to insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer, respectively. The metal catalyst within 150 Å from a surface of the semiconductor layer in a vertical direction is formed to have a concentration exceeding 0 and not exceeding 6.5×E17 atoms per cm3 in the channel region of the semiconductor layer. An organic light emitting diode (OLED) display device includes the thin film transistor.
摘要翻译：薄膜晶体管包括：衬底，设置在衬底上的半导体层，包括沟道区和源极和漏极区，并使用金属催化剂结晶;栅电极，其设置成对应于半导体层的预定区域;栅绝缘层层，其设置在栅电极和半导体层之间，以使半导体层与栅电极绝缘，以及分别与半导体层的源极和漏极区电连接的源极和漏极。在半导体层的垂直方向上的表面内的金属催化剂形成为在半导体层的沟道区域中具有超过0且不超过6.5×E17原子/ cm3的浓度。有机发光二极管（OLED）显示装置包括薄膜晶体管。

60. 发明申请

US20080308809A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE THIN FILM TRANSISTOR, AND DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管，薄膜晶体管的制造方法和包括薄膜晶体管的显示器件
公开(公告)号：US20080308809A1
公开(公告)日：2008-12-18
申请号：US12138884
申请日：2008-06-13
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L27/12 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1277
摘要： A thin film transistor (TFT), a method of fabricating the TFT, and a display device including the TFT are provided. The TFT includes a semiconductor layer having a channel region and source and drain regions is crystallized using a crystallization-inducing metal. The crystallization-inducing metal is gettered by either a metal other than the crystallization-inducing metal or a metal silicide of a metal other than the crystallization-inducing metal. A length and width of the channel region of the semiconductor layer and a leakage current of the semiconductor layer satisfy the following equation: Ioff/W=3.4E-15 L2+2.4E-12 L+c, wherein Ioff (A) is the leakage current of the semiconductor layer, W (mm) is the width of the channel region, L(μm) is the length of the channel region, and “c” is a constant ranging from 2.5E-13 to 6.8E-13.
摘要翻译：提供薄膜晶体管（TFT），制造TFT的方法以及包括TFT的显示装置。 TFT包括具有沟道区的半导体层，并且使用结晶诱导金属使源和漏区结晶。结晶诱导金属除了结晶诱导金属之外的金属或不同于结晶诱导金属的金属的金属硅化物所吸收。半导体层的沟道区域的长度和宽度以及半导体层的漏电流满足下式：Ioff / W = 3.4E-15 L2 + 2.4E-12L + c，其中Ioff（A）为半导体层的漏电流W（mm）是沟道区的宽度，L（mum）是沟道区的长度，“c”是从2.5E-13到6.8E-13的常数。

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