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51. 发明申请

US20070037367A1 Apparatus for plasma doping 有权
标题翻译：等离子体掺杂装置
公开(公告)号：US20070037367A1
公开(公告)日：2007-02-15
申请号：US11585938
申请日：2006-10-25
申请人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
IPC分类号： H05H1/24 , H01L21/04
CPC分类号： H01J37/32412 , C23C8/36 , C23C14/48 , H01J37/32467 , H01L21/2236 , H05H1/46
摘要： A doping device is provided having a vacuum container defining a chamber therein. The container has a portion made of dielectric material and bears an impurity to be doped in a substrate provided in the chamber. Also provided is a plasma source for generating a plasma in the chamber by forming an electric field through the portion of the container, such that ion in the plasma impinges against the portion of the container, feeding the impurity out of the portion of the container into the chamber.
摘要翻译：提供一种具有在其中限定室的真空容器的掺杂装置。容器具有由电介质材料制成的部分，并且在设置在腔室中的衬底中掺杂杂质。还提供了一种用于通过在容器的一部分形成电场来产生等离子体的等离子体源，使得等离子体中的离子撞击容器的部分，将杂质从容器的一部分供给到房间。

52. 发明授权

US06784080B2 Method of manufacturing semiconductor device by sputter doping 失效
标题翻译：通过溅射掺杂制造半导体器件的方法
公开(公告)号：US06784080B2
公开(公告)日：2004-08-31
申请号：US09840306
申请日：2001-04-24
申请人： Bunji Mizuno , Hiroaki Nakaoka , Michihiko Takase , Ichiro Nakayama
发明人： Bunji Mizuno , Hiroaki Nakaoka , Michihiko Takase , Ichiro Nakayama
IPC分类号： H01L2104
CPC分类号： H01L29/66106 , H01J37/32082 , H01J37/32192 , H01J37/32412 , H01J37/32678 , H01L21/2236
摘要： A semiconductor substrate and an impurity solid that comprises of impurity to be introduced to a diode formation region are held in a vacuum chamber. Inert or reactive gas is introduced into the vacuum chamber to generate plasma composed of the inert or reactive gas. A first voltage allowing the impurity solid to serve as a cathode for the plasma is applied to the said impurity solid and the said impurity solid is sputtered by ions in the plasma, thereby mixing the impurity within the said impurity solid into the plasma. A second voltage allowing a semiconductor substrate to serve as a cathode for the plasma is applied to the said semiconductor substrate, thereby directly introducing the impurity within the plasma to the surface portion of the diode formation region of the said semiconductor substrate, generating a impurity layer.
摘要翻译：将包含待引入到二极管形成区域的杂质的半导体衬底和杂质固体保持在真空室中。将惰性或反应性气体引入真空室以产生由惰性或反应性气体组成的等离子体。将杂质固体用作等离子体的阴极的第一电压施加到所述杂质固体上，并且所述杂质固体被等离子体中的离子溅射，从而将所述杂质固体内的杂质混合到等离子体中。将半导体衬底用作等离子体的阴极的第二电压被施加到所述半导体衬底，从而将等离子体内的杂质直接引入到所述半导体衬底的二极管形成区域的表面部分，产生杂质层。

53. 发明授权

US4912065A Plasma doping method 失效
标题翻译：等离子体掺杂法
公开(公告)号：US4912065A
公开(公告)日：1990-03-27
申请号：US198827
申请日：1988-05-26
申请人： Bunji Mizuno , Masafumi Kubota , Ichiro Nakayama , Masuo Tanno
发明人： Bunji Mizuno , Masafumi Kubota , Ichiro Nakayama , Masuo Tanno
IPC分类号： H01L21/223 , H01L21/22 , H01L21/268
CPC分类号： H01L21/2236
摘要： Disclosed is a plasma doping method capable of introducing a large quantity of impurities into a substrate at a relatively low temperature (200.degree. to 600.degree. C.). In the LSI fabrication process represented by Si process, it is necessary to introduce impurities at a properly controlled concentration into desired positions. In this plasma doping method, in order to satisfy this application, the doping temperature may be controlled around 100.degree. C. at high degree of vacuum and by ECR discharge or the like, and a process capable of using a resist mask generally used in the LSI fabrication step and controlling the concentration in a wide range is enabled, so that an extremely shallow impurity profile is realized.
摘要翻译：公开了能够在较低温度（200〜600℃）下将大量杂质引入基板的等离子体掺杂方法。在由Si工艺表示的LSI制造工艺中，需要以适当控制的浓度将杂质引入所需位置。在该等离子体掺杂方法中，为了满足该应用，掺杂温度可以在高真空度和通过ECR放电等控制在约100℃，以及能够使用通常用于能够进行LSI的制造工序和浓度的大范围的控制，从而实现极浅的杂质分布。

54. 发明申请

US20080210167A1 IMPURITY INTRODUCING APPARATUS AND IMPURITY INTRODUCING METHOD 失效
公开(公告)号：US20080210167A1
公开(公告)日：2008-09-04
申请号：US12122492
申请日：2008-05-16
申请人： Bunji Mizino , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
发明人： Bunji Mizino , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
IPC分类号： C23C16/44
CPC分类号： H01L21/67167 , H01J37/32412 , H01L21/2236
摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

55. 发明申请

US20070059848A1 Method of controlling impurity doping and impurity doping apparatus 失效
标题翻译：控制杂质掺杂和杂质掺杂装置的方法
公开(公告)号：US20070059848A1
公开(公告)日：2007-03-15
申请号：US10570787
申请日：2004-09-06
申请人： Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
发明人： Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
IPC分类号： H01L21/66 , H01L21/26 , H01L21/04 , H01L21/00
CPC分类号： H01L21/265
摘要： Disclosed here is a method of controlling a dose amount of dopant to be doped into object (1) to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of object (1), the amount of ions having dopant in plasma that collide with object (1), and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of object (1), and a dose amount by ions from the determined amount of ions containing dopant that collide with object (1); and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.
摘要翻译：这里公开了一种控制待掺杂到待等离子体掺杂的物体（1）中的掺杂剂的剂量的方法。根据该方法，掺杂控制由以下处理形成：确定物体（1）的温度，与物体（1）碰撞的等离子体中具有掺杂剂的离子的量以及掺杂期间的等离子体中的气体的种类; 根据物体（1）的温度由中性气体计算剂量，以及来自与物体（1）碰撞的确定量的含离子的离子的剂量; 并进行掺杂，使得中性气体的剂量量与离子的剂量之和等于预定剂量的量。

56. 发明授权

US07666770B2 Method of controlling impurity doping and impurity doping apparatus 失效
标题翻译：控制杂质掺杂和杂质掺杂装置的方法
公开(公告)号：US07666770B2
公开(公告)日：2010-02-23
申请号：US10570787
申请日：2004-09-06
申请人： Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
发明人： Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
IPC分类号： H01L21/42
CPC分类号： H01L21/265
摘要： A method is provided for controlling a dose amount of dopant to be doped into an object to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of the object, the amount of ions having dopant in plasma that collide with the object, and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of the object, and a dose amount by ions from the determined amount of ions containing dopant that collide with the object; and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.
摘要翻译：提供了一种方法，用于控制掺杂到等离子体掺杂中待处理物体中的掺杂剂的剂量。根据该方法，掺杂控制由以下处理形成：确定物体的温度，与物体相撞的等离子体中具有掺杂剂的离子的量以及掺杂期间的等离子体中的气体的种类; 根据物体的温度由中性气体计算剂量，以及从确定量的与物体碰撞的掺杂剂的离子的离子的剂量; 并进行掺杂，使得中性气体的剂量量与离子的剂量之和等于预定剂量的量。

57. 发明授权

US08772067B2 Silicon substrate having textured surface, solar cell having same, and method for producing same 有权
标题翻译：具有纹理表面的硅衬底，具有其的太阳能电池及其制造方法
公开(公告)号：US08772067B2
公开(公告)日：2014-07-08
申请号：US13823470
申请日：2012-04-13
申请人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
发明人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/18 , H01L31/0236 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/02245 , H01L31/022458 , H01L31/02363 , H01L31/068 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.
摘要翻译：本发明的目的是获得具有纹理表面的硅衬底的更细的纹理，从而获得更薄的太阳能电池用硅衬底。本发明提供了一种硅衬底，其具有50μm或更小的厚度和衬底表面取向（111），并且其具有纹理表面已形成纹理表面。这样的硅衬底通过包括用于制备优选厚度为50μm或更小的衬底表面取向（111）的硅衬底的步骤（A）和用于通过在制备的硅衬底的表面上进行包含含氟气体的蚀刻。

58. 外观设计

USD561666S1 Foot brake lock 有权
标题翻译：脚制动锁
公开(公告)号：USD561666S1
公开(公告)日：2008-02-12
申请号：US29248576
申请日：2006-08-22
申请人： Ichiro Nakayama
设计人： Ichiro Nakayama

59. 发明授权

US5332880A Method and apparatus for generating highly dense uniform plasma by use of a high frequency rotating electric field 失效
标题翻译：通过使用高频旋转电场产生高密度均匀等离子体的方法和装置
公开(公告)号：US5332880A
公开(公告)日：1994-07-26
申请号：US40348
申请日：1993-03-30
申请人： Masafumi Kubota , Kenji Harafuji , Tokuhiko Tamaki , Mitsuhiro Ohkuni , Noboru Nomura , Ichiro Nakayama
发明人： Masafumi Kubota , Kenji Harafuji , Tokuhiko Tamaki , Mitsuhiro Ohkuni , Noboru Nomura , Ichiro Nakayama
IPC分类号： C23C16/509 , H01J37/32 , H05H1/46 , B23K9/00 , H01L21/306
CPC分类号： H01J37/32091 , C23C16/509 , H01J37/32165 , H01J37/32623 , H05H1/46 , Y10S977/724 , Y10S977/844
摘要： At lateral sides of a plasma generating part under a vacuum, first to fourth lateral electrodes are so disposed as to surround the plasma generating part. High frequency electric power is supplied to the first lateral electrode from a first high frequency power supply, high frequency electric power is supplied to the second lateral electrode from the first high frequency power supply through a first delay circuit, high frequency electric power is supplied to the third lateral electrode from the first high frequency power supply through the first delay circuit and through a second delay circuit, and high frequency electric power is supplied to the fourth lateral electrode from the first high frequency power supply through the first and second delay circuits and through a third delay circuit. Accordingly, there are respectively applied, to the first to fourth lateral electrodes, the high frequency electric powers of which frequencies are equal to one another and of which phases are successively different from one another, and there is excited, in the plasma generating part, a rotational electric field to cause electrons in the plasma generating part to present rotational motions.
摘要翻译：在真空下的等离子体产生部分的侧面，第一至第四横向电极被设置成围绕等离子体产生部分。从第一高频电源向第一横向电极提供高频电力，通过第一延迟电路从第一高频电源向第二横向电极提供高频电力，将高频电力供给至来自第一高频电源的第三横向电极通过第一延迟电路和第二延迟电路，并且高频电力通过第一和第二延迟电路从第一高频电源提供给第四横向电极;以及通过第三个延迟电路。因此，分别向第一至第四横向电极施加频率彼此相等且相位相互不同的高频电力，并且在等离子体产生部分中激发，使等离子体产生部中的电子产生旋转运动的旋转电场。

60. 发明授权

US08821053B2 Paper discharge guide with protruding part for supporting paper at an angle 有权
标题翻译：纸张排出导轨，凸出部分用于一角度支撑纸张
公开(公告)号：US08821053B2
公开(公告)日：2014-09-02
申请号：US13469687
申请日：2012-05-11
申请人： Ichiro Nakayama
发明人： Ichiro Nakayama
IPC分类号： B41J11/70 , B41J13/10
CPC分类号： B41J11/70 , B26D1/305 , B26D7/015 , B41J11/006 , B41J13/106
摘要： A paper discharge device has a paper feed mechanism configured to convey recording paper; an automatic cutter that has a drive unit and configured to cut the recording paper conveyed by the paper feed mechanism into a slip by drive power from the drive unit; and a paper guide unit that has a paper guide surface configured to support the slip cut by the automatic cutter, and a protruding part that is disposed proximate to the guide surface and supports part of the cut end of the slip at a position configured to cause the part of the cut end to contact the recording paper conveyed by the paper feed mechanism.
摘要翻译：排纸装置具有被配置为传送记录纸的供纸机构; 具有驱动单元并被配置为通过来自驱动单元的驱动力将由进纸机构传送的记录纸切割成滑动件的自动切割器; 以及纸引导单元，其具有构造成支撑由所述自动切割器进行的滑动切割的纸张引导表面，以及突出部分，所述突出部分设置在所述引导表面附近并且支撑所述滑动部的所述切割端的一部分，切割端的一部分接触由进纸机构输送的记录纸。

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