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51. 发明申请

US20070215040A1 METHOD AND RELATED OPERATION SYSTEM FOR IMMERSION LITHOGRAPHY 有权
标题翻译：方法及其相关操作系统
公开(公告)号：US20070215040A1
公开(公告)日：2007-09-20
申请号：US11308245
申请日：2006-03-14
申请人： Yong-Fa Huang , Benjamin Szu-Min Lin , Chun-Chi Yu , Huan-Ting Tseng , Bo-Jou Lu
发明人： Yong-Fa Huang , Benjamin Szu-Min Lin , Chun-Chi Yu , Huan-Ting Tseng , Bo-Jou Lu
IPC分类号： B05C13/00
CPC分类号： G03F7/70341 , G03F7/70533
摘要： To avoid the yield of wafers that undergo immersion lithography influencing by delay of post exposure baking (PEB), an operation system adjusts a speed of inputting the wafers to undergo immersion lithography according to a status of wafers that have finished exposure and are waiting for baking. Therefore, the wafers that have finished exposure are transmitted to be baked efficiently and on time.
摘要翻译：为了避免经历后曝光烘烤（PEB）延迟影响的浸没光刻的晶片的产量，操作系统根据已经完成曝光并正在等待烘焙的晶片的状态来调节输入晶片以进行浸渍光刻的速度。因此，已经完成曝光的晶片被传输以有效地并且准时地被烘烤。

52. 发明申请

US20070190805A1 METHOD FOR IMPROVING THE ALIGNMENT ACCURACY OF SEMICONDUCTOR PROCESS AND METHOD OF FORMING OPENING 审中-公开
标题翻译：改善半导体工艺的对准精度的方法及其形成方法
公开(公告)号：US20070190805A1
公开(公告)日：2007-08-16
申请号：US11307507
申请日：2006-02-10
申请人： Benjamin Szu-Min Lin
发明人： Benjamin Szu-Min Lin
IPC分类号： H01L21/31 , H01L21/302 , H01L21/76
CPC分类号： H01L21/31144 , G03F9/7076 , H01L22/34
摘要： A method of improving the alignment accuracy of the semiconductor devices is described. The method is used for photolithography process, and the photolithography process is aimed at the dielectric layer covered by a hard mask layer, wherein alignment marks are formed under the dielectric layer. The hard mask layer has an absorption index and a thickness, and the product of the absorption index multiplied by the thickness is between 100 and 750. Thereby, the better range of the thickness can be determined to improve the accuracy of alignment.
摘要翻译：描述了提高半导体器件的对准精度的方法。该方法用于光刻工艺，并且光刻工艺针对由硬掩模层覆盖的介电层，其中在电介质层下方形成对准标记。硬掩模层具有吸收指数和厚度，并且吸收指数乘以厚度的乘积在100和750之间。因此，可以确定更好的厚度范围以提高对准精度。

53. 发明申请

US20070020532A1 METHOD FOR DESIGNING PHOTOMASK 有权
标题翻译：设计光子的方法
公开(公告)号：US20070020532A1
公开(公告)日：2007-01-25
申请号：US11161084
申请日：2005-07-22
申请人： Ming-Feng Shieh , Benjamin Szu-Min Lin , Chun-Chi Yu , Jian-Shin Liou
发明人： Ming-Feng Shieh , Benjamin Szu-Min Lin , Chun-Chi Yu , Jian-Shin Liou
IPC分类号： G03C5/00 , G06F17/50 , G03F1/00
CPC分类号： G03F1/32 , G03F1/36
摘要： The present invention provides a method for designing a mask. First, a main pattern including at least a strip pattern is formed on the mask substrate. A shift feature is added to one end of the strip pattern of the main pattern. Either the phase shift or the optical transmission or both of the shift feature can be adjusted to optimize the resultant critical dimension between line-ends of the main pattern, thus improving pullback of the line-ends of the strip pattern in the main pattern.
摘要翻译：本发明提供一种掩模设计方法。首先，在掩模基板上形成至少包括带状图案的主图案。移位功能被添加到主图案的条纹图案的一端。可以调整相移或光学传输或移位特征两者以优化主图案的线端之间的合成临界尺寸，从而改善主图案中带状图案的线端的拉回。

54. 发明申请

US20060133222A1 LITHOGRAPHY METHOD 审中-公开
标题翻译： LITHOGRAPHY方法
公开(公告)号：US20060133222A1
公开(公告)日：2006-06-22
申请号：US10905265
申请日：2004-12-22
申请人： Benjamin Szu-Min Lin
发明人： Benjamin Szu-Min Lin
IPC分类号： G11B21/08
CPC分类号： G03F7/70325
摘要： A lithography method for improving contrast includes the following steps: To provide a light source. To provide a first plate including at least one opening rotates according to at least one angular velocity. To provide a mask having patterns on it. To provide a second plate including at least one block corresponding to the opening rotates according to the same angular velocity as the first plate. The method also includes a step to perform an exposure process such that zero order light diffracted by the mask is hindered by the block.
摘要翻译：用于改善对比度的光刻方法包括以下步骤：提供光源。提供包括至少一个开口的第一板根据至少一个角速度旋转。提供具有图案的面具。为了提供一种包括至少一个对应于开口的块的第二板，根据与第一板相同的角速度旋转。该方法还包括执行曝光处理的步骤，使得由掩模衍射的零级光被块阻挡。

55. 发明授权

US06844143B2 Sandwich photoresist structure in photolithographic process 有权
标题翻译：光刻工艺中的三明治光刻胶结构
公开(公告)号：US06844143B2
公开(公告)日：2005-01-18
申请号：US10064649
申请日：2002-08-02
申请人： Benjamin Szu-Min Lin , Vencent Chang , George Liu , Cheng-Chung Chen
发明人： Benjamin Szu-Min Lin , Vencent Chang , George Liu , Cheng-Chung Chen
IPC分类号： G03F7/00 , H01L21/027 , H01L21/311 , H01L21/768 , G03F7/20
CPC分类号： G03F7/0035 , H01L21/0271 , H01L21/31144 , H01L21/76807 , Y10S430/151
摘要： A photolithographic process that involves building a sandwich photoresist structure. A first photoresist layer is formed over a substrate. An anti-reflection layer is formed over the first photoresist layer. A second photoresist layer is formed over the anti-reflection layer. A first photo-exposure is conducted and the exposed second photoresist layer is developed to pattern the second photoresist layer and the anti-reflection layer. Using the second photoresist layer and the anti-reflection layer as a mask, a second photo-exposure and a second photoresist development are conducted to pattern the first photoresist layer.
摘要翻译：涉及建立夹心光刻胶结构的光刻工艺。在衬底上形成第一光致抗蚀剂层。在第一光致抗蚀剂层上形成防反射层。在防反射层上形成第二光致抗蚀剂层。进行第一次曝光并且曝光的第二光致抗蚀剂层被显影以对第二光致抗蚀剂层和抗反射层进行图案化。使用第二光致抗蚀剂层和抗反射层作为掩模，进行第二光曝光和第二光致抗蚀剂显影以对第一光致抗蚀剂层进行图案化。

56. 发明授权

US06511891B2 Method of preventing toppling of lower electrode through flush cleaning 失效
标题翻译：通过冲洗清洗防止下电极倒塌的方法
公开(公告)号：US06511891B2
公开(公告)日：2003-01-28
申请号：US09882747
申请日：2001-06-14
申请人： Nathna Sun , Benjamin Szu-Min Lin , Chuan-Fu Wang
发明人： Nathna Sun , Benjamin Szu-Min Lin , Chuan-Fu Wang
IPC分类号： H01L2120
CPC分类号： H01L28/60 , H01L21/02052 , H01L21/32134
摘要： A method of forming the lower electrode of a capacitor capable of withstanding the flushing force produced by a cleaning agent. A lower electrode having a rectangular profile when viewed from the top is provided. The lower electrode is bounded by a pair of ends and a pair of sides. The ends and the sides are linked together. The ends have a wedge shape. The sides have edges that cave in towards the center, thereby forming a recess region between the sides. A flushing operation is carried out using a cleaning solution. The cleaning solution flows from one end of the electrode to the other end along the sides.
摘要翻译：一种形成能够承受由清洁剂产生的冲洗力的电容器的下电极的方法。提供从顶部观察时具有矩形轮廓的下电极。下电极由一对端部和一对侧面限定。端部和侧面连接在一起。端部具有楔形。这些侧面具有朝向中心凹陷的边缘，从而在两侧之间形成凹陷区域。使用清洁溶液进行冲洗操作。清洗液从电极的一端流向另一端。

57. 发明授权

US06277685B1 Method of forming a node contact hole on a semiconductor wafer 有权
标题翻译：在半导体晶片上形成节点接触孔的方法
公开(公告)号：US06277685B1
公开(公告)日：2001-08-21
申请号：US09421261
申请日：1999-10-20
申请人： Benjamin Szu-Min Lin , Jung-Chao Chiou , Chin-Hui Lee , Chuan-Fu Wang
发明人： Benjamin Szu-Min Lin , Jung-Chao Chiou , Chin-Hui Lee , Chuan-Fu Wang
IPC分类号： H01L218242
CPC分类号： H01L27/10855 , H01L21/76802 , H01L21/76831 , H01L21/76895 , H01L21/76897
摘要： The present invention provides a method of forming a node contact hole on a semiconductor wafer. The semiconductor wafer comprises a silicon substrate, a first dielectric layer positioned on the silicon substrate, two bit lines positioned on the first dielectric layer which form a first groove between the two bit lines and the surface of the first dielectric layer, and a second dielectric layer positioned on each of the two bit lines. A lithographic process is performed to form a photoresist layer on the second dielectric layer with at least one second groove extending down to the second dielectric layer wherein the second groove is positioned above the first groove and is perpendicular to the first groove. An etching process is performed along the second groove of the photoresist layer to remove the second dielectric layer and the first dielectric layer under the second groove down to the surface of the silicon substrate so as to approximately form the node contact hole. Finally, a spacer is formed using an insulating material on the walls of the node contact hole to complete the node contact hole. The spacer completely covers the walls of the two bit lines within the node contact hole but the surface of the silicon substrate exposed at the bottom of the node contact hole is not completely covered by the spacer.
摘要翻译：本发明提供一种在半导体晶片上形成节点接触孔的方法。半导体晶片包括硅衬底，位于硅衬底上的第一电介质层，位于第一电介质层上的两个位线，其在两个位线之间形成第一沟槽和第一电介质层的表面;以及第二电介质层位于两个位线中的每一个上。执行平版印刷工艺以在第二介电层上形成光致抗蚀剂层，其中至少一个第二凹槽向下延伸到第二介电层，其中第二凹槽位于第一凹槽的上方并且垂直于第一凹槽。沿着光致抗蚀剂层的第二凹槽进行蚀刻处理，以将第二介电层和第二凹槽下的第一介电层向下移动到硅衬底的表面，以便大致形成节点接触孔。最后，在节点接触孔的壁上使用绝缘材料形成间隔物，以完成节点接触孔。间隔件完全覆盖节点接触孔内的两个位线的壁，但是在节点接触孔的底部露出的硅衬底的表面不完全被间隔件覆盖。

58. 发明授权

US6100014A Method of forming an opening in a dielectric layer through a photoresist layer with silylated sidewall spacers 失效
标题翻译：通过具有甲硅烷化侧壁间隔物的光致抗蚀剂层在电介质层中形成开口的方法
公开(公告)号：US6100014A
公开(公告)日：2000-08-08
申请号：US199883
申请日：1998-11-24
申请人： Benjamin Szu-Min Lin , Kun-Chi Lin
发明人： Benjamin Szu-Min Lin , Kun-Chi Lin
IPC分类号： G03F7/40 , G03F7/00
CPC分类号： G03F7/405 , G03F7/40
摘要： A semiconductor fabrication method is provided for forming an opening in a dielectric layer, which can help downsize the critical dimension of the resulting opening through the use of a photoresist layer with silylated sidewall spacers. By this method, the first step is to coat a base photoresist layer over the dielectric layer. Next, a photolithographic process is performed to remove a selected part of the base photoresist layer. Then, a conformational coating process is performed to coat a silylatable photoresist layer over the base photoresist layer to a controlled predefined thickness. Subsequently, a silylation process is performed on the silylatable photoresist layer so as to form a silylated photoresist layer over all the exposed surfaces of the base photoresist layer. After this, a first etching process is performed on the silylated photoresist layer, with the remaining portions of the silylated photoresist layer serving as silylated sidewall spacers on the base photoresist layer. Then, with the combined structure of the base photoresist layer and the overlying silylated sidewall spacers serving as mask, a second etching process is performed on the dielectric layer to etch away the unmasked part of the dielectric layer to form the intended opening in the dielectric layer.
摘要翻译：提供半导体制造方法用于在电介质层中形成开口，这有助于通过使用具有甲硅烷化侧壁间隔物的光致抗蚀剂层来减小所得开口的临界尺寸。通过该方法，第一步是在介电层上涂覆基底光致抗蚀剂层。接下来，进行光刻工艺以去除基底光致抗蚀剂层的选定部分。然后，进行构象涂覆工艺以将基础光致抗蚀剂层上的可甲硅烷化的光致抗蚀剂层涂覆到受控的预定厚度。随后，对可甲硅烷化的光致抗蚀剂层进行甲硅烷基化处理，以在基底光致抗蚀剂层的所有暴露表面上形成甲硅烷基化的光致抗蚀剂层。之后，对甲硅烷基化的光致抗蚀剂层进行第一蚀刻工艺，其中甲基化光致抗蚀剂层的其余部分用作基底光致抗蚀剂层上的甲硅烷基化侧壁间隔物。然后，利用基底光致抗蚀剂层和上覆的甲硅烷基化侧壁间隔物用作掩模的组合结构，对电介质层进行第二蚀刻工艺，以蚀刻掉电介质层的未屏蔽部分以在电介质层中形成预期的开口。

59. 发明授权

US6015642A Method for forming a photomask 失效
标题翻译：形成光掩模的方法
公开(公告)号：US6015642A
公开(公告)日：2000-01-18
申请号：US197271
申请日：1998-11-20
申请人： Benjamin Szu-Min Lin
发明人： Benjamin Szu-Min Lin
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/50
摘要： A fabrication process for a multi-layer photomask. A transparent substrate is provided. An anti-reflecting layer is formed on the substrate. First blinding blocks are formed on the anti-reflecting layer by defining a first blinding layer. A transparent layer is formed along the profile of the structure surface described above. Second blinding blocks are formed on the transparent layer between the first blinding blocks by defining a second blinding layer, wherein a part of the transparent layer on the first blocks is exposed.
摘要翻译：多层光掩模的制造工艺。提供透明基板。在基板上形成防反射层。通过限定第一致盲层，在抗反射层上形成第一致密块。沿着上述结构表面的轮廓形成透明层。通过限定第二堵塞层，在第一堵塞块之间的透明层上形成第二堵塞块，其中露出第一块上的透明层的一部分。

60. 发明授权

US06004845A Method for fabricating a crown-shaped capacitor 失效
标题翻译：制造冠状电容器的方法
公开(公告)号：US06004845A
公开(公告)日：1999-12-21
申请号：US111306
申请日：1998-07-07
申请人： Benjamin Szu-Min Lin , Der-Yuan Wu
发明人： Benjamin Szu-Min Lin , Der-Yuan Wu
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L27/10852 , H01L27/10817
摘要： A method for fabricating crown-shaped a capacitor is provided. The method is comprised of the following steps. First, a dielectric layer is formed on a substrate having a pre-formed field effect transistor, then a contact hole which exposes one of the source/drain regions of the field effect transistor is defined and formed. Then a first conductive layer is formed in the contact hole and on the dielectric layer, a crown-shaped photoresist layer is formed by employing a mask comprising a transmission layer, a partial transmission layer, and a non-transmission layer. Next, the pattern on the photoresist layer is transferred onto the first conductive layer to form a crown-shaped conductive layer. Then, a dielectric film is formed on the top of the crown-shaped conductive layer, and a second conductive layer on the top of the dielectric film.
摘要翻译：提供一种用于制造冠状电容器的方法。该方法包括以下步骤。首先，在具有预形成的场效应晶体管的基板上形成电介质层，然后形成露出场效应晶体管的源/漏区之一的接触孔。然后在接触孔和电介质层上形成第一导电层，通过采用包括透射层，部分透射层和非透射层的掩模形成冠状光致抗蚀剂层。接下来，将光致抗蚀剂层上的图案转印到第一导电层上以形成冠状导电层。然后，在冠状导电层的顶部形成电介质膜，在电介质膜的顶部形成第二导电层。

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