会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 52. 发明授权
    • Centrifugal compressor and dry gas seal system for use in it
    • 离心式压缩机和干气密封系统用于其中
    • US07854587B2
    • 2010-12-21
    • US11635551
    • 2006-12-08
    • Toshio ItoHiroshi Yamada
    • Toshio ItoHiroshi Yamada
    • F01D11/06F04D29/08
    • F01D11/04F04D29/124
    • The present invention relates to a centrifugal compressor using a dry gas seal system for protecting seal means. A multistage centrifugal compressor has primary dry gas seal means for preventing leakage of working gas from a machine inner side, and secondary dry gas seal means for backing up the first dry gas seal means. A seal gas line for introducing the gas leaked from the first and second dry gas seal means to the outside of the machine is installed between the primary dry gas seal means and the secondary dry gas seal means. The gas seal line has an orifice and a check valve, and buffer means is installed between the orifice and the check valve.
    • 本发明涉及一种使用干燥气体密封系统来保护密封装置的离心式压缩机。 多级离心压缩机具有用于防止工作气体从机器内侧泄漏的主要干燥气体密封装置和用于支撑第一干燥气体密封装置的二次干燥气体密封装置。 用于将从第一和第二干燥气体密封装置泄漏的气体引入机器外部的密封气体管线安装在主干燥气体密封装置和次级干燥气体密封装置之间。 气体密封线具有孔口和止回阀,缓冲装置安装在孔口和止回阀之间。
    • 53. 发明授权
    • Error correction apparatus
    • 纠错装置
    • US07793197B2
    • 2010-09-07
    • US11509282
    • 2006-08-24
    • Toshio ItoToshihiko Morita
    • Toshio ItoToshihiko Morita
    • H03M13/00
    • G11B20/1833H03M13/1515H03M13/152H03M13/1525H03M13/1545
    • One set of syndromes is calculated from a first data string from among a plurality thereof including at least 2t+1 pieces of symbols as a parity string, and coefficients of an error locator polynomial from the one set of the syndromes. Whether or not a correction is successful is judged by using the coefficients of the error locator polynomial and the same calculation is performed for a second data string if a correction failure is judged. Contrarily, if a correction success is judged, an error of the first data string is corrected by using the aforementioned set of the syndromes and the coefficients of the error locator polynomial.
    • 从包括至少2t + 1个符号作为奇偶校验串的多个第一数据串中计算一组综合征,以及来自一组综合征的误差定位多项式的系数。 通过使用误差定位多项式的系数来判断校正是否成功,如果判断出校正失败,则对第二数据串执行相同的计算。 相反,如果判断校正成功,则通过使用上述的校正子集和误差定位多项式的系数来校正第一数据串的错误。
    • 57. 发明申请
    • Semiconductor memory device
    • 半导体存储器件
    • US20060076594A1
    • 2006-04-13
    • US11155609
    • 2005-06-20
    • Toshio Ito
    • Toshio Ito
    • H01L29/94
    • H01L27/11502H01L27/11507H01L28/57H01L28/65
    • The present invention provides a semiconductor memory device which comprises an interlayer insulating film formed on a semiconductor substrate, a contact plug formed in the interlayer insulating film and having one end electrically connected to the semiconductor substrate, a ferroelectric capacitor formed on the interlayer insulating film and comprising a first electrode, a ferroelectric film and a second electrode electrically connected to the other end of the contact plug, an insulating film which covers the ferroelectric capacitor and has an opening that exposes the first electrode, and a wiring film which covers the ferroelectric capacitor and the insulating film and is electrically connected to the first electrode exposed through the opening and which consists of a material having conductivity and even a hydrogen diffusion preventing function.
    • 本发明提供一种半导体存储器件,其包括形成在半导体衬底上的层间绝缘膜,形成在层间绝缘膜中并具有与半导体衬底电连接的一端的接触插塞,形成在层间绝缘膜上的铁电电容器和 包括电连接到所述接触插塞的另一端的第一电极,铁电体膜和第二电极,覆盖所述铁电电容器并具有暴露所述第一电极的开口的绝缘膜,以及覆盖所述铁电电容器的布线膜 和绝缘膜,并且电连接到通过开口暴露的第一电极,并且由具有导电性和甚至氢扩散防止功能的材料构成。