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51. 发明申请

US20070111488A1 FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROSTRUCTURES AND DEVICES BY METALORGANIC CHEMICAL VAPOR DEPOSITION 有权
标题翻译：通过金属化学气相沉积制备非金属氮化物薄膜，异质结构和器件
公开(公告)号：US20070111488A1
公开(公告)日：2007-05-17
申请号：US11621479
申请日：2007-01-09
申请人： Arpan Chakraborty , Benjamin Haskell , Stacia Keller , James Speck , Steven DenBaars , Shuji Nakamura , Umesh Mishra
发明人： Arpan Chakraborty , Benjamin Haskell , Stacia Keller , James Speck , Steven DenBaars , Shuji Nakamura , Umesh Mishra
IPC分类号： H01L21/20
CPC分类号： H01L33/06 , B82Y20/00 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01S5/0213 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
摘要翻译：制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。

52. 发明授权

US11114594B2 Light emitting device packages using light scattering particles of different size 有权
公开(公告)号：US11114594B2
公开(公告)日：2021-09-07
申请号：US11895573
申请日：2007-08-24
申请人： Arpan Chakraborty
发明人： Arpan Chakraborty
IPC分类号： H01L33/56 , H01L33/50 , H01L33/58 , H01L25/075 , H01L33/54
摘要： A radiation emitting device comprising light scattering particles of different sizes that at least partially surround an emitter, improving the spatial color mixing and color uniformity of the device. Multiple sizes of light scattering particles are dispersed in a medium to at least partially surround a single- or multiple-chip polychromatic emitter package. The different sizes of light scattering particles interact with corresponding wavelength ranges of emitted radiation. Thus, radiation emitted over multiple wavelength ranges or sub-ranges can be efficiently scattered to eliminate (or intentionally create) spatially non-uniform color patterns in the output beam.

53. 发明授权

US09287469B2 Encapsulation for phosphor-converted white light emitting diode 有权
公开(公告)号：US09287469B2
公开(公告)日：2016-03-15
申请号：US12151089
申请日：2008-05-02
申请人： Arpan Chakraborty
发明人： Arpan Chakraborty
IPC分类号： H01L33/44 , H01L33/50 , H01L33/60
CPC分类号： H01L33/501 , H01L33/56 , H01L33/60 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： An improved light emitting device, especially a phosphor-converted white light device, wherein the light extraction efficiency and the color temperature distribution uniformity are improved by the introduction of both nanoparticles and light scattering particles proximate to the light source. Nanoparticles having a high index of refraction are dispersed throughout a wavelength conversion layer to adjust the index of refraction of the layer for improved light extraction. Light scattering particles may be dispersed in the wavelength conversion layer and/or in a surrounding medium to improve the spatial correlated color temperature uniformity.

54. 发明授权

US09236530B2 Miscut bulk substrates 有权
标题翻译： Miscut散装衬底
公开(公告)号：US09236530B2
公开(公告)日：2016-01-12
申请号：US13431834
申请日：2012-03-27
申请人： Arpan Chakraborty , Michael Grundmann , Anurag Tyagi
发明人： Arpan Chakraborty , Michael Grundmann , Anurag Tyagi
IPC分类号： H01L33/00 , H01L21/00 , H01L33/32 , H01L21/02 , H01L33/16
CPC分类号： H01L33/32 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16
摘要： A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.
摘要翻译：一种在Ga面c面（Al，Ga，In）N基板上使用具有大于至少0.35度朝向m方向的晶面的c面表面提供（Al，Ga，In）N薄膜的方法。发光器件形成在光滑（Al，Ga，In）N薄膜上。在光滑表面上制造的器件表现出改进的性能。

55. 发明授权

US09159888B2 Wafer level phosphor coating method and devices fabricated utilizing method 有权
标题翻译：晶圆级荧光粉涂布方法及利用方法制造的器件
公开(公告)号：US09159888B2
公开(公告)日：2015-10-13
申请号：US11899790
申请日：2007-09-07
申请人： Ashay Chitnis , James Ibbetson , Bernd Keller , David T. Emerson , John Edmond , Michael J. Bergmann , Jasper S. Cabalu , Jeffrey C. Britt , Arpan Chakraborty , Eric Tarsa , Yankun Fu
发明人： Ashay Chitnis , James Ibbetson , Bernd Keller , David T. Emerson , John Edmond , Michael J. Bergmann , Jasper S. Cabalu , Jeffrey C. Britt , Arpan Chakraborty , Eric Tarsa , James Seruto , Yankun Fu
IPC分类号： H01L33/00 , H01L33/50 , H01L33/62 , H01L33/38 , H01L33/36 , H01L33/44 , H01L33/54
CPC分类号： H01L33/508 , H01L33/0095 , H01L33/36 , H01L33/387 , H01L33/44 , H01L33/505 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
摘要翻译：制造发光二极管（LED）芯片的方法包括通常在衬底上提供多个LED。基座沉积在LED上，每个基座与其中一个LED电接触。在LED上形成涂层，其中涂层埋入至少一些基座。然后将涂层平坦化以暴露至少一些埋置的基座，同时在所述LED上留下至少一些所述涂层。然后可以例如通过引线接合露出的基座。本发明公开了用于制造LED芯片的类似方法，所述LED芯片具有倒装芯片接合在载体基板上并用于制造其它半导体器件的LED。还公开了使用所公开的方法制造的LED芯片晶片和LED芯片。

56. 发明授权

US08998444B2 Solid state lighting devices including light mixtures 有权
标题翻译：固体照明装置，包括轻质混合物
公开(公告)号：US08998444B2
公开(公告)日：2015-04-07
申请号：US12491654
申请日：2009-06-25
申请人： John Roberts , Gerald H. Negley , Antony P. van de Ven , Arpan Chakraborty , Bernd Keller , Ronan P. Le Toquin
发明人： John Roberts , Gerald H. Negley , Antony P. van de Ven , Arpan Chakraborty , Bernd Keller , Ronan P. Le Toquin
IPC分类号： F21V9/00 , F21K99/00 , F21S4/00 , F21Y101/02 , F21Y105/00 , H01L25/075 , H01L33/50 , F21Y103/00
CPC分类号： F21K9/00 , F21S4/20 , F21Y2103/10 , F21Y2105/10 , F21Y2105/12 , F21Y2115/10 , H01L25/0753 , H01L33/50 , H01L2924/0002 , Y10S362/80 , H01L2924/00
摘要： A solid state lighting apparatus includes a plurality of light emitting diodes (LEDs) including at least a first LED and a second LED. Chromaticities of the first and second LEDs are selected so that a combined light generated by a mixture of light from the pair of LEDs has about a target chromaticity. The first LED may include a first LED chip that emits light in the blue portion of the visible spectrum and a phosphor that emits red light in response to blue light emitted by the first LED chip. The second LED emits light having a color point that is above the planckian locus of a 1931 CIE Chromaticity diagram, and in particular may have a yellow green, greenish yellow or green hue.
摘要翻译：固态照明装置包括至少包括第一LED和第二LED的多个发光二极管（LED）。选择第一和第二LED的色度，使得由来自该对LED的光的混合产生的组合光具有约目标色度。第一LED可以包括发射可见光谱的蓝色部分中的光的第一LED芯片和响应于由第一LED芯片发射的蓝光发射红光的荧光体。第二个LED发出具有高于1931 CIE色度图的平底轨迹的色点的光，特别是可以具有黄绿色，绿黄色或绿色。

57. 发明申请

US20120007102A1 High Voltage Device and Method for Optical Devices 审中-公开
标题翻译：光电器件高压器件及方法
公开(公告)号：US20120007102A1
公开(公告)日：2012-01-12
申请号：US13179346
申请日：2011-07-08
申请人： Daniel Feezell , Rajat Sharma , Arpan Chakraborty , Troy Anthony Trottier , Thomas Katona , Mark D'Evelyn
发明人： Daniel Feezell , Rajat Sharma , Arpan Chakraborty , Troy Anthony Trottier , Thomas Katona , Mark D'Evelyn
IPC分类号： H01L33/02
CPC分类号： H01L27/156 , H01L33/14
摘要： A light emitting device comprising a gallium and nitrogen containing substrate. The device also has an electrically isolating material grown between the substrate and an active region such that the light emitting device is operable at a voltage greater than 10V.
摘要翻译：一种包含含镓和氮的衬底的发光器件。该器件还具有在衬底和有源区之间生长的电隔离材料，使得发光器件可工作在大于10V的电压。

58. 发明申请

US20110062449A1 TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (GA,AL,IN,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES 有权
标题翻译：用于生长和制造半透明（GA，AL，IN，B）N薄膜，异构体和器件的技术
公开(公告)号：US20110062449A1
公开(公告)日：2011-03-17
申请号：US12953029
申请日：2010-11-23
申请人： Robert M. Farrell, JR. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell, JR. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L33/30 , H01L21/20
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
摘要翻译：一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

59. 发明授权

US07846757B2 Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices 有权
标题翻译：用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的技术
公开(公告)号：US07846757B2
公开(公告)日：2010-12-07
申请号：US11444946
申请日：2006-06-01
申请人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L33/00 , H01L27/15
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
摘要翻译：一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

60. 发明申请

US20090236621A1 Low index spacer layer in LED devices 有权
标题翻译： LED设备中的低折射率间隔层
公开(公告)号：US20090236621A1
公开(公告)日：2009-09-24
申请号：US12077638
申请日：2008-03-19
申请人： Arpan Chakraborty
发明人： Arpan Chakraborty
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/22 , H01L33/507 , H01L2933/0091
摘要： A light emitting diode (LED) device having a low index of refraction spacer layer separating the LED chip and a functional layer. The LED chip has a textured light emission surface to increase light extraction from the chip. The spacer layer has an index of refraction that is lower than both the LED chip and the functional layer. Most of the light generated in the LED chip passes easily into the spacer layer due to the textured surface of the chip. At the interface of the spacer layer and the functional layer the light sees a step-up in index of refraction which facilitates transmission. A portion of the light that has passed into the functional layer will be reflected or scattered back toward the spacer layer where some of it will experience total internal reflection. Total internal reflection at this interface may increase extraction efficiency by reducing the amount of light that re-enters the spacer layer and, ultimately, the LED chip where it may be absorbed. The spacer layer also provides a thermal buffer between the LED chip and the functional layer. Thus, the functional layer, which may be a wavelength conversion layer comprising phosphors, for example, is insulated from direct thermal transfer from the LED chip. The spacer layer can also function as a passivation layer.
摘要翻译：一种具有分离LED芯片和功能层的低折射率间隔层的发光二极管（LED）装置。 LED芯片具有纹理化的光发射表面，以增加芯片的光提取。间隔层的折射率低于LED芯片和功能层。 LED芯片中产生的大部分光由于芯片的纹理表面而容易地进入间隔层。在间隔层和功能层的界面处，光看起来有助于传播的折射率升高。已经进入功能层的光的一部分将被反射或散射回间隔层，其中一些将经历全内反射。在该界面处的全内反射可以通过减少重新进入间隔层的光量以及最终可以吸收的LED芯片来提高提取效率。间隔层还在LED芯片和功能层之间提供热缓冲器。因此，例如可以是包括磷光体的波长转换层的功能层与来自LED芯片的直接热转移绝缘。间隔层也可以用作钝化层。

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