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51. 发明申请

US20120280276A1 Single Crystal Ge On Si 审中-公开
标题翻译：单晶晶硅
公开(公告)号：US20120280276A1
公开(公告)日：2012-11-08
申请号：US13425079
申请日：2012-03-20
申请人： Rytis Dargis , Erdem Arkun , Andrew Clark , Michael Lebby
发明人： Rytis Dargis , Erdem Arkun , Andrew Clark , Michael Lebby
IPC分类号： H01L21/20 , H01L29/165
CPC分类号： H01L21/02488 , H01L21/02381 , H01L21/02483 , H01L21/02502 , H01L21/02532
摘要： A single crystal germanium-on-silicon structure includes a single crystal silicon substrate. A single crystal layer of gadolinium oxide is epitaxially grown on the substrate. The gadolinium oxide has a cubic crystal structure and a lattice spacing approximately equal to the lattice spacing or a multiple of the single crystal silicon. A single crystal layer of lanthanum oxide is epitaxially grown on the gadolinium oxide with a thickness of approximately 12 nm or less. The lanthanum oxide has a lattice spacing approximately equal to the lattice spacing or a multiple of single crystal germanium and a cubic crystal structure approximately similar to the cubic crystal structure of the gadolinium oxide. A single crystal layer of germanium with a (111) crystal orientation is epitaxially grown on the layer of lanthanum oxide.
摘要翻译：单晶硅硅结构包括单晶硅衬底。在衬底上外延生长氧化钆单晶层。氧化钆具有立方晶体结构和大约等于晶格间距或单晶硅倍数的晶格间距。在氧化钆上外延生长氧化镧单晶层，厚度约为12nm以下。氧化镧具有大约等于晶格间距的晶格间距或单晶锗的倍数和与氧化钆近似相似的立方晶体结构。具有（111）晶体取向的锗的单晶层外延生长在氧化镧层上。

52. 发明申请

US20120019902A1 INTERGRATED PUMP LASER AND RARE EARTH WAVEGUIDE AMPLIFIER 有权
标题翻译：互动泵激光器和稀土波导放大器
公开(公告)号：US20120019902A1
公开(公告)日：2012-01-26
申请号：US12840538
申请日：2010-07-21
申请人： David L. Williams , Andrew Clark , Michael Lebby
发明人： David L. Williams , Andrew Clark , Michael Lebby
IPC分类号： H01S3/00 , H01L21/30
CPC分类号： H01S3/0632 , H01S3/0635 , H01S3/0637 , H01S3/0941 , H01S3/09415 , H01S3/1603 , H01S5/0207 , H01S5/0218 , H01S5/026 , H01S5/183 , H01S5/32341 , H01S5/42
摘要： A light amplifier includes a single crystal semiconductor substrate with a rare earth oxide, light amplifying gain medium deposited on the substrate and formed into a light waveguide, and a pump laser. A lattice matching virtual substrate integrates the pump laser to the gain medium with a first opposed surface crystal lattice matched to the gain medium and second opposed surface crystal lattice matched to the pump laser. The pump laser is positioned with a light output surface coupled to a light input surface of the gain medium so as to introduce pump energy into the light waveguide. The light amplifier has a very small footprint and allows the integration of control and monitoring electronics.
摘要翻译：光放大器包括具有稀土氧化物的单晶半导体衬底，沉积在衬底上并形成光波导的光放大增益介质和泵浦激光器。晶格匹配虚拟衬底将泵浦激光器与增益介质集成，其具有与与激光器匹配的增益介质和第二相对表面晶格匹配的第一相对表面晶格。泵浦激光器定位成具有耦合到增益介质的光输入表面的光输出表面，以将泵浦能量引入到光波导中。光放大器占地面积很小，可以集成控制和监控电子产品。

53. 发明授权

US08823055B2 REO/ALO/A1N template for III-N material growth on silicon 有权
标题翻译： REO / ALO / A1N模板，用于在硅上进行III-N材料生长
公开(公告)号：US08823055B2
公开(公告)日：2014-09-02
申请号：US13717211
申请日：2012-12-17
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L31/0336
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L29/1075 , H01L29/66462 , H01L29/7786 , H01L33/007 , H01L33/12
摘要： A method of forming a template on a silicon substrate includes providing a single crystal silicon substrate. The method further includes epitaxially depositing a layer of rare earth oxide on the surface of the silicon substrate. The rare earth oxide being substantially crystal lattice matched to the surface of the silicon substrate. The method further includes forming an aluminum oxide layer on the rare earth oxide, the aluminum oxide being substantially crystal lattice matched to the surface of the rare earth oxide and epitaxially depositing a layer of aluminum nitride (AlN) on the aluminum oxide layer substantially crystal lattice matched to the surface of the aluminum oxide.
摘要翻译：在硅衬底上形成模板的方法包括提供单晶硅衬底。该方法还包括在硅衬底的表面上外延沉积稀土氧化物层。稀土氧化物基本上与硅衬底的表面晶格匹配。所述方法还包括在所述稀土氧化物上形成氧化铝层，所述氧化铝基本上与所述稀土氧化物的表面晶格匹配，并且在所述氧化铝层上外延沉积基本上晶格上的氮化铝（AlN）层与氧化铝的表面匹配。

54. 发明申请

US20140167057A1 REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON 有权
标题翻译： REO / ALO / AlN模板用于III-N材料在硅上的生长
公开(公告)号：US20140167057A1
公开(公告)日：2014-06-19
申请号：US13717211
申请日：2012-12-17
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L21/02 , H01L29/20 , H01L29/267
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L29/1075 , H01L29/66462 , H01L29/7786 , H01L33/007 , H01L33/12
摘要： A method of forming a template on a silicon substrate includes providing a single crystal silicon substrate. The method further includes epitaxially depositing a layer of rare earth oxide on the surface of the silicon substrate. The rare earth oxide being substantially crystal lattice matched to the surface of the silicon substrate. The method further includes forming an aluminum oxide layer on the rare earth oxide, the aluminum oxide being substantially crystal lattice matched to the surface of the rare earth oxide and epitaxially depositing a layer of aluminum nitride (AlN) on the aluminum oxide layer substantially crystal lattice matched to the surface of the aluminum oxide.
摘要翻译：在硅衬底上形成模板的方法包括提供单晶硅衬底。该方法还包括在硅衬底的表面上外延沉积稀土氧化物层。稀土氧化物基本上与硅衬底的表面晶格匹配。所述方法还包括在所述稀土氧化物上形成氧化铝层，所述氧化铝基本上与所述稀土氧化物的表面晶格匹配，并且在所述氧化铝层上外延沉积基本上晶格上的氮化铝（AlN）层与氧化铝的表面匹配。

55. 发明申请

US20120104443A1 IIIOxNy ON SINGLE CRYSTAL SOI SUBSTRATE AND III n GROWTH PLATFORM 有权
标题翻译： IIIOxNY单晶硅基板和III n增长平台
公开(公告)号：US20120104443A1
公开(公告)日：2012-05-03
申请号：US13221474
申请日：2011-08-30
申请人： Andrew Clark , Michael Lebby , Erdem Arkun , Rytis Dargis
发明人： Andrew Clark , Michael Lebby , Erdem Arkun , Rytis Dargis
IPC分类号： H01L33/60 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76248 , H01L21/02381 , H01L21/02483 , H01L21/02488 , H01L21/02507 , H01L21/02532 , H01L29/7842 , H01L29/78603 , H01L33/007 , H01L33/12 , H01L33/46
摘要： A silicon-on-insulator (SOI) substrate structure and method of fabrication including a single crystal silicon substrate, a layer of single crystal rare earth oxide formed on the substrate, a layer of engineered single crystal silicon formed on the layer of single crystal rare earth oxide, and a single crystal insulator layer of IIIOxNy formed on the engineered single crystal silicon layer. In some embodiments the III material in the insulator layer includes more than on III material. In a preferred embodiment the single crystal rare earth oxide includes Gd2O3 and the single crystal insulator layer of IIIOxNy includes one of AlOxNy and AlGaOxNy.
摘要翻译：一种绝缘体上硅（SOI）衬底结构及其制造方法，包括单晶硅衬底，在衬底上形成的单晶稀土氧化物层，在单晶稀土层上形成的工程化单晶硅层在工程化的单晶硅层上形成IIIOxNy的单晶绝缘体层。在一些实施例中，绝缘体层中的III材料包括多于III族材料。在优选的实施方案中，单晶稀土氧化物包括Gd 2 O 3，并且IIIO x N y的单晶绝缘体层包括AlO x N y和AlGaO x N y之一。

56. 发明申请

US20110203666A1 HIGH EFFICIENCY SOLAR CELL USING IIIB MATERIAL TRANSITION LAYERS 失效
标题翻译：使用IIIB材料过渡层的高效太阳能电池
公开(公告)号：US20110203666A1
公开(公告)日：2011-08-25
申请号：US12708969
申请日：2010-02-19
申请人： Michael Lebby , Andrew Clark
发明人： Michael Lebby , Andrew Clark
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： H01L31/0687 , H01L31/0725 , H01L31/18 , H01L31/1848 , H01L31/1852 , Y02E10/544
摘要： A solar cell including a base of single crystal silicon with a cubic crystal structure and a single crystal layer of a second material with a higher bandgap than the bandgap of silicon. First and second single crystal transition layers are positioned in overlying relationship with the layers graduated from a cubic crystal structure at one surface to a hexagonal crystal structure at an opposed surface. The first and second transition layers are positioned between the base and the layer of second material with the one surface lattice matched to the base and the opposed surface lattice matched to the layer of second material.
摘要翻译：一种太阳能电池，其包括具有立方晶体结构的单晶硅的基底和具有比硅的带隙更高的带隙的第二材料的单晶层。第一和第二单晶过渡层与从一个表面的立方晶体结构分级到在相对表面处的六方晶系结构的层的重叠关系定位。第一和第二过渡层位于基底和第二材料层之间，其中一个表面晶格与基底相匹配，而相对的表面晶格与第二材料层相匹配。

57. 发明申请

US20100112736A1 FULL COLOR DISPLAY 有权
标题翻译：全彩色显示
公开(公告)号：US20100112736A1
公开(公告)日：2010-05-06
申请号：US12568620
申请日：2009-09-28
申请人： Michael Lebby , Vijit Sabnis , Petar B. Atanackovic
发明人： Michael Lebby , Vijit Sabnis , Petar B. Atanackovic
IPC分类号： H01L21/18 , H01L33/00
CPC分类号： H01L27/156 , H01L33/105 , H01L33/343 , H01L33/44
摘要： A full color display comprising a red, a green, and a blue light emitting diode, each light emitting diode including a light emitting region having at least one layer of single crystal rare earth material, the rare earth material in each of the light emitting diodes having at least one radiative transition, and the rare earth material producing a radiation wavelength of approximately 640 nm in the red light emitting diode, 540 nm in the green light emitting diode, and 460 nm in the blue light emitting diode. Generally, the color of each LED is determined by selecting a rare earth with a radiative transition producing a radiation wavelength at the selected color. In cases where the rare earth has more than one radiative transition, tuned mirrors can be used to select the desired color.
摘要翻译：包括红色，绿色和蓝色发光二极管的全色显示器，每个发光二极管包括具有至少一层单晶稀土材料的发光区域，每个发光二极管中的稀土材料具有至少一个辐射跃迁，并且在红色发光二极管中产生约640nm的发射波长的稀土材料，绿色发光二极管中的540nm，以及蓝色发光二极管中的460nm。通常，通过选择具有产生所选颜色的辐射波长的辐射跃迁的稀土来确定每个LED的颜色。在稀土具有多于一个辐射跃迁的情况下，可以使用调整后的反射镜来选择所需的颜色。

58. 发明授权

US07643526B1 Spontaneous/stimulated light emitting μ-cavity device 失效
标题翻译：自发/受激发光的mu腔装置
公开(公告)号：US07643526B1
公开(公告)日：2010-01-05
申请号：US11472087
申请日：2006-06-21
申请人： Michael Lebby , Vijit Sabnis , Petar B. Atanackovic
发明人： Michael Lebby , Vijit Sabnis , Petar B. Atanackovic
IPC分类号： H01S3/16
CPC分类号： H01S3/0627 , H01S3/0604 , H01S3/08009 , H01S3/09 , H01S3/16
摘要： A light emitting device with a μ-cavity including a first spacer of single crystal dielectric material and an active area including single crystal erbium dielectric material positioned on the first spacer. The erbium dielectric material and the single crystal dielectric material of the first spacer are substantially crystal lattice matched at their juncture. A second spacer of single crystal dielectric material is positioned on the active area. The erbium dielectric material and the single crystal dielectric material of the second spacer are substantially crystal lattice matched at the second surface. The high-κ erbium dielectric provides a high gain κ-cavity that emits increased amounts of light in either spontaneous or stimulated modes of operation.
摘要翻译：一种具有包括单晶介质材料的第一间隔物的μ腔的发光器件和包括位于第一间隔物上的单晶铒介电材料的有源区。铒电介质材料和第一间隔物的单晶介电材料在其接合处基本上晶格匹配。单晶介质材料的第二间隔物位于有源区上。铒电介质材料和第二间隔物的单晶介电材料在第二表面上基本上晶格匹配。高kappa铒电介质提供高增益κ空腔，其在自发或刺激的操作模式中发射增加量的光。

59. 发明申请

US20090291535A1 STACKED TRANSISTORS AND PROCESS 有权
标题翻译：堆叠晶体管和工艺
公开(公告)号：US20090291535A1
公开(公告)日：2009-11-26
申请号：US12534011
申请日：2009-07-31
申请人： Petar B. Atanackovic , Michael Lebby
发明人： Petar B. Atanackovic , Michael Lebby
IPC分类号： H01L29/786
CPC分类号： H01L21/8221 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L27/0688 , H01L27/1203
摘要： A method of horizontally stacking transistors on a common semiconductor substrate is initiated by providing a single crystal, generally silicon, semiconductor substrate. A plurality of transistors are formed on the single crystal semiconductor substrate and encapsulated in an insulating layer, such as silicon dioxide. One or more openings are formed through the insulating layer between the plurality of transistors so as to expose a surface of the single crystal semiconductor substrate. A layer of single crystal rare earth insulator material is epitaxially grown on the exposed surface of the single crystal semiconductor substrate. A layer of single crystal semiconductor material, generally silicon, is epitaxially grown on the layer of single crystal rare earth insulator material. An intermixed transistor is formed on the layer of single crystal semiconductor material.
摘要翻译：在公共半导体衬底上水平堆叠晶体管的方法是通过提供单晶体，一般为硅的半导体衬底来启动的。在单晶半导体基板上形成多个晶体管，并封装在二氧化硅等绝缘层中。通过多个晶体管之间的绝缘层形成一个或多个开口，以暴露单晶半导体衬底的表面。在单晶半导体衬底的暴露表面上外延生长单晶稀土绝缘体材料层。在单晶稀土绝缘体材料层上外延生长单层半导体材料（通常为硅）层。在单晶半导体材料层上形成混合晶体管。

60. 发明授权

US07605531B1 Full color display including LEDs with rare earth active areas and different radiative transistions 有权
标题翻译：全彩显示屏，包括具有稀土活性区域和不同辐射传输的LED
公开(公告)号：US07605531B1
公开(公告)日：2009-10-20
申请号：US11257517
申请日：2005-10-25
申请人： Michael Lebby , Vijit Sabnis , Petar B. Atanackovic
发明人： Michael Lebby , Vijit Sabnis , Petar B. Atanackovic
IPC分类号： H01J1/62 , H01J63/04 , H01L31/00
CPC分类号： H01L27/156 , H01L33/105 , H01L33/343 , H01L33/44
摘要： A full color display comprising a red, a green, and a blue light emitting diode, each light emitting diode including a light emitting region having at least one layer of single crystal rare earth material, the rare earth material in each of the light emitting diodes having at least one radiative transition, and the rare earth material producing a radiation wavelength of approximately 640 nm in the red light emitting diode, 540 nm in the green light emitting diode, and 460 nm in the blue light emitting diode. Generally, the color of each LED is determined by selecting a rare earth with a radiative transition producing a radiation wavelength at the selected color. In cases where the rare earth has more than one radiative transition, tuned mirrors can be used to select the desired color.
摘要翻译：包括红色，绿色和蓝色发光二极管的全色显示器，每个发光二极管包括具有至少一层单晶稀土材料的发光区域，每个发光二极管中的稀土材料具有至少一个辐射跃迁，并且在红色发光二极管中产生约640nm的发射波长的稀土材料，绿色发光二极管中的540nm，以及蓝色发光二极管中的460nm。通常，通过选择具有产生所选颜色的辐射波长的辐射跃迁的稀土来确定每个LED的颜色。在稀土具有多于一个辐射跃迁的情况下，可以使用调整后的反射镜来选择所需的颜色。

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