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    • 52. 发明授权
    • Three terminal magnetic sensor having an in-stack longitudinal biasing layer structure and a self-pinned layer structure
    • 三端子磁传感器具有叠层纵向偏置层结构和自固定层结构
    • US07636223B2
    • 2009-12-22
    • US11032491
    • 2005-01-10
    • Jeffrey S. Lille
    • Jeffrey S. Lille
    • G11B5/33
    • G11B5/3932B82Y25/00G01R33/093G11B5/3903H01L29/66984H01L43/08
    • In one illustrative example, a three terminal magnetic sensor (TTM) has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer is located between the emitter region and the base region, and a second barrier layer is located between the collector region and the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. The collector region is or includes a layer of semiconductor material. The base region includes a free layer structure. The TTM further includes a self-pinned layer structure and an in-stack longitudinal biasing layer (LBL) structure formed in stack with the sensor stack structure, with a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure.
    • 在一个说明性示例中,三端子磁传感器(TTM)具有包括基极区域,集电极区域和发射极区域的传感器堆叠结构。 第一阻挡层位于发射极区域和基极区域之间,第二阻挡层位于集电极区域和基极区域之间。 TTM的多个端子包括耦合到基极区域的基极引线,耦合到集电极区域的集电极引线和耦合到发射极区域的发射极引线。 集电极区域是或包括半导体材料层。 基区包括自由层结构。 TTM还包括自固定层结构和与传感器堆叠结构堆叠形成的堆叠内纵向偏置层(LBL)结构,其具有平行于TTM的感测平面的磁矩,用于磁偏置自由 层结构。
    • 53. 发明申请
    • METHOD, SYSTEM, AND COMPUTER PROGRAM PRODUCT FOR THERMALLY ASSISTED RECORDING SYSTEMS
    • 用于热辅助记录系统的方法,系统和计算机程序产品
    • US20090195905A1
    • 2009-08-06
    • US12024018
    • 2008-01-31
    • Jeffrey S. Lille
    • Jeffrey S. Lille
    • G11B5/02
    • G11B5/40G11B5/02G11B19/046G11B2005/0005G11B2005/0021
    • A method according to one embodiment comprises using a heating device, inducing localized heating on a magnetic medium during a recording operation; detecting a temperature in a vicinity of the heating device; detecting a current of the heating device; and performing an action if a function of at least one of the temperature and the current is outside an acceptable operation zone. A method according to another embodiment comprises selecting an initial current of a heating device for inducing localized heating on a magnetic medium during recording operations; initiating the heating device; performing recording operations; monitoring a temperature in a vicinity of the heating device during the recording operations; and if a function of the temperature and the current is outside an acceptable operation zone, changing an operating parameter such that the function of the temperature and the current is in the acceptable operation zone.
    • 根据一个实施例的方法包括使用加热装置,在记录操作期间在磁介质上引起局部加热; 检测加热装置附近的温度; 检测加热装置的电流; 以及如果所述温度和电流中的至少一个的功能在可接受的操作区域之外,则执行动作。 根据另一实施例的方法包括:在记录操作期间选择用于在磁介质上引起局部加热的加热装置的初始电流; 启动加热装置; 执行录音操作; 在记录操作期间监视加热装置附近的温度; 并且如果温度和电流的功能在可接受的操作区域之外,则改变操作参数使得温度和电流的功能处于可接受的操作区域。
    • 54. 发明授权
    • Method and apparatus for an enhanced coplanar conductance structure for inductive heads
    • 用于感应头的增强型共面电导结构的方法和装置
    • US07509730B2
    • 2009-03-31
    • US11247666
    • 2005-10-11
    • Jeffrey S. Lille
    • Jeffrey S. Lille
    • G11B5/17
    • G11B5/17Y10T29/4906Y10T29/49064Y10T29/49073
    • A method and apparatus for forming a high conductance, high aspect ratio structure in a single low temperature copper chemical vapor deposition step. A trench for a winding of a coil is formed by forming a first length of the trench in the insulation layer. The first length of the trench forms a first portion of the winding of the coil in a confined area proximate a yoke region. A second length of trench is formed in the insulation layer extending away from the first length of the trench and the yoke region. The second length of trench includes parallel trenches for forming a second portion of the winding in a nonconfined area. A metal is deposited into the first length of the trench and the second length of the trench to form the first and second portions of the winding of the coil.
    • 在单个低温铜化学气相沉积步骤中形成高电导率,高纵横比结构的方法和装置。 通过在绝缘层中形成沟槽的第一长度来形成线圈绕组的沟槽。 沟槽的第一长度形成线圈的绕组的第一部分在靠近磁轭区域的限制区域中。 在绝缘层中形成第二长度的沟槽,其远离沟槽和轭区域的第一长度延伸。 沟槽的第二长度包括用于在非限制区域中形成绕组的第二部分的平行沟槽。 金属沉积在沟槽的第一长度和沟槽的第二长度中以形成线圈的绕组的第一和第二部分。
    • 55. 发明授权
    • Lead configuration for reduced capacitive interference in a magnetic read/write head
    • 引线配置,用于降低磁读/写磁头的电容干扰
    • US07466516B2
    • 2008-12-16
    • US11046444
    • 2005-01-28
    • Jeffrey S. Lille
    • Jeffrey S. Lille
    • G11B5/60G11B5/33G11B5/127
    • G11B5/4853
    • A slider having a lead circuitry configured to minimize capacitive coupling between leads in a slider having a read head, a write head and an extra device such as a heater element. The leads are configures so that wherever a pair of leads cross one another, they do so at right angles or at nearly right angles. The leads can cross one another at angles of between 45 and 135 degrees, but preferably cross one another at an angle of about 90 degrees. The leads are electrically insulated from one another by a dielectric material formed between them. By crossing a pair of leads at right angles to one another, the overlapping area between the leads is minimized, thereby minimizing the capacitive coupling between them.
    • 具有引线电路的滑块,该引线电路被配置为使具有读头的滑块中的引线之间的电容耦合最小化,写头和诸如加热器元件的附加装置。 引线是配置,使得一对引线交叉的地方,它们以直角或几乎成直角的方式进行。 引线可以以45度和135度之间的角度相互交叉,但优选以大约90度的角度相互交叉。 引线通过在它们之间形成的电介质材料彼此电绝缘。 通过将一对引线彼此成直角交叉,引线之间的重叠区域被最小化,从而最小化它们之间的电容耦合。
    • 56. 发明申请
    • Method for fabricating a three terminal magnetic sensor for magnetic heads with a semiconductor junction
    • 用于制造具有半导体结的磁头的三端磁传感器的方法
    • US20080151440A1
    • 2008-06-26
    • US12009427
    • 2008-01-17
    • Jeffrey S. Lille
    • Jeffrey S. Lille
    • G11B5/33
    • B82Y25/00B82Y10/00G01R33/06G11B5/3903G11B2005/3996Y10T29/49032Y10T29/49043Y10T29/49044
    • The TTM sensor includes a semiconductor structure and a spin valve structure, where the semiconductor structure includes at least two layers. Two of the three leads of the TTM sensor are engaged to the semiconductor layers, where a semiconductor junction between the layers is disposed between the two leads. Generally, the junction may comprise a P-N junction between a P-type layer and an N-type layer and in an embodiment of the present invention the collector lead is engaged to the P-type semiconductor layer and the base lead is connected to the N-type semiconductor layer. The spin valve structure is fabricated upon the semiconductor structure and the emitter is engaged to the spin valve structure. In this configuration, a free magnetic layer of the spin valve structure is fabricated upon the semiconductor material, such that a schottky barrier is formed between the metallic free magnetic layer material and the semiconductor material.
    • TTM传感器包括半导体结构和自旋阀结构,其中半导体结构包括至少两层。 TTM传感器的三个引线中的两个接合到半导体层,其中层之间的半导体结被设置在两个引线之间。 通常,结可以包括P型层和N型层之间的PN结,并且在本发明的实施例中,集电极引线接合到P型半导体层,并且基极连接到N型层 型半导体层。 自旋阀结构被制造在半导体结构上,并且发射极接合到自旋阀结构。 在该结构中,在半导体材料上制造自旋阀结构的自由磁性层,使得在金属自由磁性层材料和半导体材料之间形成肖特基势垒。
    • 57. 发明授权
    • Three terminal magnetic sensor for magnetic heads with a semiconductor junction
    • 具有半导体结的磁头的三端磁传感器
    • US07349185B2
    • 2008-03-25
    • US10902995
    • 2004-07-30
    • Jeffrey S. Lille
    • Jeffrey S. Lille
    • G11B5/39
    • B82Y25/00B82Y10/00G01R33/06G11B5/3903G11B2005/3996Y10T29/49032Y10T29/49043Y10T29/49044
    • The TTM sensor includes a semiconductor structure and a spin valve structure, where the semiconductor structure includes at least two layers. Two of the three leads of the TTM sensor are engaged to the semiconductor layers, where a semiconductor junction between the layers is disposed between the two leads. Generally, the junction may comprise a P-N junction between a P-type layer and an N-type layer and in an embodiment of the present invention the collector lead is engaged to the P-type semiconductor layer and the base lead is connected to the N-type semiconductor layer. The spin valve structure is fabricated upon the semiconductor structure and the emitter is engaged to the spin valve structure. In this configuration, a free magnetic layer of the spin valve structure is fabricated upon the semiconductor material, such that a schottky barrier is formed between the metallic free magnetic layer material and the semiconductor material.
    • TTM传感器包括半导体结构和自旋阀结构,其中半导体结构包括至少两层。 TTM传感器的三个引线中的两个接合到半导体层,其中层之间的半导体结被设置在两个引线之间。 通常,结可以包括P型层和N型层之间的PN结,并且在本发明的实施例中,集电极引线接合到P型半导体层,并且基极连接到N型层 型半导体层。 自旋阀结构被制造在半导体结构上,并且发射极接合到自旋阀结构。 在该结构中,在半导体材料上制造自旋阀结构的自由磁性层,使得在金属自由磁性层材料和半导体材料之间形成肖特基势垒。
    • 58. 发明授权
    • Electro-thermal micromechanical actuator for finitely positioning a storage device slider and methods of use and manufacture
    • 用于有限定位存储装置滑块的电热微机械致动器以及使用和制造方法
    • US07230799B2
    • 2007-06-12
    • US09933218
    • 2001-08-20
    • Jeffrey S. Lille
    • Jeffrey S. Lille
    • G11B5/56
    • G11B5/5521
    • A system and method for controlling the position of a digital data storage device slider through the use of an electro-thermal micromechanical actuator is disclosed. A movable member is etched into a face of a slider opposite the air-bearing surface of the slider. The movable member is substantially freestanding in relation to the slider, having only a single end connected to the slider. An electrically actuated heater element with two parallel current paths is disposed on the movable member. One of the current paths is substantially narrower than the other current path. When a current is passed through the heater element, the narrower current path heats up more quickly than the wider current path. By varying the current passed through the heater element in a selected manner, a distortion of the movable member is harnessed and used to create a relative motion in the slider body, allowing the slider to be quickly and exactly located over the centerline of a track of a storage device.
    • 公开了一种通过使用电热微机械致动器来控制数字数据存储装置滑块的位置的系统和方法。 可动构件被蚀刻到与滑块的空气轴承表面相对的滑块的表面中。 可移动构件相对于滑块基本独立,仅具有连接到滑块的单个端部。 具有两个平行电流路径的电致动加热器元件设置在可动件上。 当前路径中的一条实际上比其他电流路径窄。 当电流通过加热器元件时,较窄的电流路径比较宽的电流通路加热得更快。 通过以选择的方式改变通过加热器元件的电流,利用可移动部件的变形并用于在滑块体中产生相对运动,从而允许滑块快速且精确地位于轨道的中心线之上 存储设备。
    • 60. 发明授权
    • Magnetic head having magnetic pole with lengthened neck pole tip and coplanar yoke, and method of fabrication thereof
    • 具有加长的颈极端和共面磁轭的磁极的磁头及其制造方法
    • US07133255B2
    • 2006-11-07
    • US10650943
    • 2003-08-27
    • Jeffrey S. LilleNeil Smith
    • Jeffrey S. LilleNeil Smith
    • G11B5/147
    • G11B5/187
    • A magnetic head having a magnetic pole that includes a pole tip and a yoke. The pole tip includes an elongated neck, having an anchor piece on one end and a yoke interconnection piece on the other end. The air bearing surface of the head is located approximately at the midpoint of the elongated neck, and shadowing effects of the end pieces during the ion milling notching process do not create significant variations in the width of the neck at locations near the midpoint of the neck. As a result, variations of the pole tip width at the ABS of fabricated magnetic heads is significantly reduced, and processing yield is therefore increased. The yoke is engaged to the pole tip at a location along the neck that is close to the air bearing surface. In a preferred embodiment, the yoke interconnect piece is encapsulated within the yoke.
    • 具有磁极的磁头,其包括极尖和磁轭。 极尖包括细长的颈部,在一端具有锚固件,另一端具有轭互连件。 头部的空气支承表面大致位于细长颈部的中点处,并且离子铣削切口过程中端部件的阴影效应在颈部中点附近的位置处不会产生明显的颈部宽度变化 。 结果,制造的磁头的ABS的极尖宽度的变化显着降低,因此加工产量增加。 磁轭在颈部靠近空气轴承表面的位置处接合到磁极尖端。 在优选实施例中,磁轭互连件被封装在磁轭内。