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51. 发明授权

US06541389B1 Method of patterning a thin layer by chemical etching 失效
标题翻译：通过化学蚀刻图案化薄层的方法
公开(公告)号：US06541389B1
公开(公告)日：2003-04-01
申请号：US09469166
申请日：1999-12-21
申请人： Akira Kubo , Kiyotsugu Mizouchi , Masahiko Machida
发明人： Akira Kubo , Kiyotsugu Mizouchi , Masahiko Machida
IPC分类号： H01L21302
CPC分类号： H01L29/78669 , C23F1/02 , H01L21/28008 , H01L21/32134 , H01L27/12 , H01L27/124 , H01L29/4908 , H01L29/66765
摘要： A method of patterning a thin layer into a predetermined shape on the basis of a pattern layer arranged in a thin layer formed in a substrate comprises a first step of soaking the substrate in a first solution to etch off the thin layer on the basis of the pattern layer, a second step of spraying a second solution having the same composition as that of an etching solution used in a third step to wash the substrate, and a third step of soaking the substrate in a third solution to further etch the thin layer.
摘要翻译：基于布置在形成在基板中的薄层中的图案层将薄层图案化成预定形状的方法包括：将基板浸入第一溶液中的第一步骤，以基于图案层，第二步骤，喷涂具有与在第三步骤中使用的蚀刻溶液相同的组成的第二溶液以洗涤衬底;以及第三步骤，将衬底浸泡在第三溶液中以进一步蚀刻薄层。

52. 发明授权

US06361708B1 Method and apparatus for polishing a metal film 失效
标题翻译：抛光金属膜的方法和装置
公开(公告)号：US06361708B1
公开(公告)日：2002-03-26
申请号：US09078559
申请日：1998-05-14
申请人： Akira Kubo , Mieko Suzuki
发明人： Akira Kubo , Mieko Suzuki
IPC分类号： H01L21302
CPC分类号： B24B37/042 , H01L21/3212 , H01L21/32134
摘要： A method and an apparatus for polishing a metal film formed on a semiconductor device are disclosed. A semiconductor wafer is immersed in an oxidizing solution before it is polished. As a result, the undesirable part of a W film deposited on the circumferential edge of the wafer is removed by etching.
摘要翻译：公开了一种用于抛光形成在半导体器件上的金属膜的方法和设备。将半导体晶片在抛光之前浸入氧化溶液中。结果，通过蚀刻去除沉积在晶片的圆周边缘上的W膜的不期望的部分。

53. 发明授权

US06132292A Chemical mechanical polishing method suitable for highly accurate planarization 有权
标题翻译：化学机械抛光方法适用于高精度平面化
公开(公告)号：US06132292A
公开(公告)日：2000-10-17
申请号：US161218
申请日：1998-09-28
申请人： Akira Kubo
发明人： Akira Kubo
IPC分类号： H01L21/3205 , B24B37/04 , H01L21/304 , H01L21/321 , H01L21/768 , B24B1/00
CPC分类号： B24B37/04 , H01L21/3212 , H01L21/7684
摘要： A method of forming interconnection layers within grooves of an insulating layer. The method includes the steps of: forming grooves in an upper portion of an insulating layer; depositing a conductive layer over a surface of the insulating layer and also within the grooves; and subjecting the conductive layer to a chemical mechanical polishing for polishing the conductive layer, so as to leave the conductive layer only within the grooves, thereby forming interconnection layers in the grooves. The chemical mechanical polishing is carried out by use of a polishing pad having a polyurethane foam polishing pad surface at a down pressure of no more than 420 gwt/cm.sup.2.
摘要翻译：在绝缘层的槽内形成互连层的方法。该方法包括以下步骤：在绝缘层的上部形成沟槽; 在绝缘层的表面上以及沟槽内沉积导电层; 并且对导电层进行化学机械抛光以抛光导电层，以便仅将导电层留在沟槽内，从而在槽中形成互连层。化学机械抛光通过使用具有聚氨酯泡沫抛光垫表面的抛光垫在不超过420g / cm 2的压力下进行。

54. 发明授权

US6078366A Array substrate comprising semiconductor contact layers having same outline as signal lines 有权
标题翻译：阵列基板包括具有与信号线相同轮廓的半导体接触层
公开(公告)号：US6078366A
公开(公告)日：2000-06-20
申请号：US187422
申请日：1998-11-06
申请人： Masayuki Dohjo , Hideo Kawano , Akira Kubo , Makoto Shibusawa , Tetsuya Iizuka , Tamio Nakai , Kazushige Mori
发明人： Masayuki Dohjo , Hideo Kawano , Akira Kubo , Makoto Shibusawa , Tetsuya Iizuka , Tamio Nakai , Kazushige Mori
IPC分类号： G02F1/13 , G02F1/1345 , G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , G02F1/136 , G02F1/1343 , H01L29/04
CPC分类号： G02F1/13458 , G02F1/1345 , G02F1/13452 , G02F1/136213 , G02F1/136227 , H01L27/1214 , G02F2001/13629
摘要： An array substrate includes plural scanning lines (111); a thin film transistor (112) having a first dielectric film (115), (117), a semiconductor film (120) thereon, and a source electrode (126b) electrically coupled to the semiconductor film (120) and a drain electrode (126a); a signal line (110) as taken out of the drain electrode (126a) to extend at substantially right angles to the scanning lines (111); and a pixel electrode (131) electrically connected to the source electrode (126b), wherein the pixel electrode (131) is electrically connected to the source electrode (126b) through a second dielectric film (127) as disposed on at least the signal line (110) while the pixel electrode (131) overlaps an elongate region (113) from its neighboring scanning line (111) through the first and second dielectric films (115), (117), (127). With such an arrangement, an appropriate storage capacitor can be formed by causing the scanning lines and pixel electrode to overlap each other without having to decrease the manufacturing yield while enabling achievement of high aperture ratio.
摘要翻译：阵列基板包括多个扫描线（111）; 具有第一电介质膜（115），（117），其上的半导体膜（120）和与半导体膜（120）电耦合的源电极（126b）和漏电极（126a）的薄膜晶体管（112））; 从所述漏电极（126a）取出以与所述扫描线（111）大致直角延伸的信号线（110）。以及与源电极（126b）电连接的像素电极（131），其中像素电极（131）通过设置在至少信号线上的第二电介质膜（127）与源电极（126b）电连接（110），而像素电极（131）通过第一和第二介电膜（115），（117），（127）与其相邻扫描线（111）的细长区域（113）重叠。通过这样的布置，可以通过使扫描线和像素电极彼此重叠而不必降低制造成品率而能够实现高开口率而形成适当的存储电容器。

55. 发明授权

US06048764A Method for producing semiconductor device with capacitor stacked 失效
标题翻译：制造具有电容器的半导体器件的方法
公开(公告)号：US06048764A
公开(公告)日：2000-04-11
申请号：US800121
申请日：1997-02-13
申请人： Hiroshi Suzuki , Akira Kubo
发明人： Hiroshi Suzuki , Akira Kubo
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10852
摘要： In forming a storage node with sidewalls on interlayer dielectric layer of a semiconductor device, the interlayer dielectric layer having an uppermost silicon oxide film, a silicon nitride film is formed as a protective film on the storage node of poly-silicon formed on the interlayer dielectric layer, and thereafter a poly-silicon layer is deposited and then subjected to an anisotropic etching to partially remove the polysilicon layer to remain, as the side walls, portions of the poly-silicon layer on side surfaces of the storage node, with protecting the storage node by the protective film from the etching and without etching the uppermost silicon oxide film. Alternatively, the uppermost silicon oxide film is subjected to a nitrogen plasma treatment before forming the storage node, and a silicon oxide film can be used as the protective film. The storage node with the side walls can be used as a lower electrode of a stack type capacitor in the semiconductor device after removing the protective film.
摘要翻译：在形成具有半导体器件的层间电介质层上的侧壁的存储节点的情况下，在层间电介质上形成的多晶硅的存储节点上形成具有最上层氧化硅膜的层间绝缘层，氮化硅膜作为保护膜然后沉积多晶硅层，然后进行各向异性蚀刻以部分去除多晶硅层，以保留作为侧壁的存储节点的侧表面上的多晶硅层的部分，同时保护存储节点由保护膜从蚀刻而不蚀刻最上面的氧化硅膜。或者，在形成存储节点之前，对最上面的氧化硅膜进行氮等离子体处理，可以使用氧化硅膜作为保护膜。在去除保护膜之后，具有侧壁的存储节点可用作半导体器件中的堆叠型电容器的下电极。

56. 发明授权

US6028652A Array substrate for display device and manufacturing method thereof 有权
标题翻译：显示装置用阵列基板及其制造方法
公开(公告)号：US6028652A
公开(公告)日：2000-02-22
申请号：US187919
申请日：1998-11-06
申请人： Masayuki Dohjo , Hideo Kawano , Akira Kubo , Makoto Shibusawa , Tetsuya Iizuka , Tamio Nakai , Kazushige Mori
发明人： Masayuki Dohjo , Hideo Kawano , Akira Kubo , Makoto Shibusawa , Tetsuya Iizuka , Tamio Nakai , Kazushige Mori
IPC分类号： G02F1/13 , G02F1/1345 , G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , G02F1/136 , G02F1/139 , H01L29/04
CPC分类号： G02F1/13458 , G02F1/1345 , G02F1/13452 , G02F1/136213 , G02F1/136227 , H01L27/1214 , G02F2001/13629
摘要： An array substrate includes plural scanning lines (111); a thin film transistor (112) having a first dielectric film (115), (117), a semiconductor film (120) thereon, and a source electrode (126b) electrically coupled to the semiconductor film (120) and a drain electrode (126a); a signal line (110) as taken out of the drain electrode (126a) to extend at substantially right angles to the scanning lines (111); and a pixel electrode (131) electrically connected to the source electrode (126b), wherein the pixel electrode (131) is electrically connected to the source electrode (126b) through a second dielectric film (127) as disposed on at least the signal line (110) while the pixel electrode (131) overlaps an elongate region (113) from its neighboring scanning line (111) through the first and second dielectric films (115), (117), (127).With such an arrangement, an appropriate storage capacitor can be formed by causing the scanning lines and pixel electrode to overlap each other without having to decrease the manufacturing yield while enabling achievement of high aperture ratio.
摘要翻译：阵列基板包括多个扫描线（111）; 具有第一电介质膜（115），（117），其上的半导体膜（120）和与半导体膜（120）电耦合的源电极（126b）和漏电极（126a）的薄膜晶体管（112））; 从所述漏电极（126a）取出以与所述扫描线（111）大致直角延伸的信号线（110）。以及与源电极（126b）电连接的像素电极（131），其中像素电极（131）通过设置在至少信号线上的第二电介质膜（127）与源电极（126b）电连接（110），而像素电极（131）通过第一和第二介电膜（115），（117），（127）与其相邻扫描线（111）的细长区域（113）重叠。通过这样的布置，可以通过使扫描线和像素电极彼此重叠而不必降低制造成品率而能够实现高开口率而形成适当的存储电容器。

57. 发明授权

US5503952A Method for manufacture of color filter and liquid crystal display 失效
公开(公告)号：US5503952A
公开(公告)日：1996-04-02
申请号：US404741
申请日：1995-03-15
申请人： Tameyuki Suzuki , Akira Kubo , Yoshikatsu Okada
发明人： Tameyuki Suzuki , Akira Kubo , Yoshikatsu Okada
IPC分类号： G02B5/20 , G03F9/00
CPC分类号： G02B5/201
摘要： A color filter having discrete color layers arrayed on a substrate and light screening coating films interlaced between the color layers and if desired seal part having no coating film thereon, with high precision is industrially advantageously manufactured by (a) forming a transparent electroconductive layer on a transparent substrate, (b) coating the transparent electroconductive layer with a positive photoresist composition to form a photoresist layer, (c) exposing the photoresist layer to light through a photomask and developing the light-exposed photoresist layer to form a circuit-form photoresist layer, (d) etching and eliminating the transparent electroconductive layer bared in the gaps between the circuit-form photoresist layer to obtain a substrate having thereon a circuit-form laminate, (e) exposing the laminate to light through a photomask and developing the light-exposed laminate to bare the transparent electroconductive layer discretely, (f) carrying out electrodeposition using a thermosetting or photosensitive resin material-containing electro-deposition bath to form colored layers on the discretely bared transparent electroconductive layers, (g) eliminating the photoresist layer remaining after the development of step (e) to obtain a substrate having discrete color layers, the gaps being bared substrate surface and bared transparent electroconductive layer, (h) coating the substrate with a light screening material-containing photosensitive resin composition to form a light screening resin layer, and (i) exposing the light screening resin layer to light from the back side and developing the substrate to eliminate the unexposed part of the light screening resin layer. The color filter is well prevented from leakage of light and clear in coloration and superior in optical properties. A liquid crystal display of high image quality is manufactured by the use of this color filter.

58. 发明授权

US4499225A Coating composition 失效
标题翻译：涂料组成
公开(公告)号：US4499225A
公开(公告)日：1985-02-12
申请号：US511294
申请日：1983-07-06
申请人： Akira Kubo , Akihiko Ishii , Ken Nishizaki , Tomoharu Saito
发明人： Akira Kubo , Akihiko Ishii , Ken Nishizaki , Tomoharu Saito
IPC分类号： C09D5/00 , C09D5/02 , C09D5/46 , C09D123/02 , C09D123/28 , C09D123/34 , C08L91/06
CPC分类号： C09D123/28 , C09D123/02 , C09D123/34
摘要： A coating composition is provided herein prepared by dispersing in water a film-forming component comprising about 60-99 wt. % of a powder containing as a main component one or more resins selected from polyethylene, polypropylene and their derivatives and about 1-40% by weight of a low molecular weight oxidized polyethylene and/or derivatives thereof. This coating can be used for coating various electrical parts, automobile parts, etc., and the coatings have an excellent appearance, good chemical resistance, high insulation properties and good water resistance.
摘要翻译：本文提供的涂料组合物通过在水中分散成膜组分制备，所述成膜组分包含约60-99重量％％的主要成分的一种或多种选自聚乙烯，聚丙烯及其衍生物的树脂和约1-40重量％的低分子量氧化聚乙烯和/或其衍生物的粉末。该涂层可用于涂覆各种电气部件，汽车部件等，并且涂层具有优异的外观，良好的耐化学性，高绝缘性和良好的耐水性。

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