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51. 发明申请

US20120042120A1 BACKWARD COMPATIBLE EXTENDED USB PLUG AND RECEPTACLE WITH DUAL PERSONALITY 有权
标题翻译：后退兼容扩展的USB插头和双人个人电脑
公开(公告)号：US20120042120A1
公开(公告)日：2012-02-16
申请号：US13280193
申请日：2011-10-24
申请人： Jim Chin-Nan Ni , David Q. Chow , Frank I-Kang Yu , Abraham C. Ma , Ming-Shiang Shen
发明人： Jim Chin-Nan Ni , David Q. Chow , Frank I-Kang Yu , Abraham C. Ma , Ming-Shiang Shen
IPC分类号： G06F12/00 , G06F13/42
CPC分类号： G06F12/1416 , G06F21/32 , G06F21/78 , G06K19/07 , G06K19/07354 , G07C9/00087 , Y02D10/13
摘要： An extended Universal-Serial-Bus (USB) connector plug and socket each have a pin substrate with one surface that supports the four metal contact pins for the standard USB interface. An extension of the pin substrate carries another 8 extension metal contact pins that mate when both the connector plug and socket are extended. The extension can be an increased length of the plug's and socket's pin substrate or a reverse side of the substrate. Standard USB connectors do not make contact with the extension metal contacts that are recessed, retracted by a mechanical switch, or on the extension of the socket's pin substrate that a standard USB connector cannot reach. Standard USB sockets do not make contact with the extension metal contacts because the extended connector's extension contacts are recessed, or on the extension of the connector pin substrate that does not fit inside a standard USB socket.
摘要翻译：扩展的通用串行总线（USB）连接器插头和插座每个都具有一个引脚基板，一个表面支持用于标准USB接口的四个金属触点引脚。当两个连接器插头和插座都延伸时，针脚衬底的延伸部分带有另外8个延伸金属接触针。扩展可以是插头和插座的引脚基板或基板的相反侧的增加的长度。标准USB连接器不能与通过机械开关凹入，缩回的扩展金属触点或标准USB连接器无法到达的插座引脚基板延伸部分接触。由于扩展连接器的扩展触点凹进，或者连接器针脚基座的延伸部分不符合标准USB插座，因此标准USB插座不会与延长金属触点接触。

52. 发明授权

US07806705B2 Slide flash memory devices 有权
标题翻译：滑动闪存设备
公开(公告)号：US07806705B2
公开(公告)日：2010-10-05
申请号：US12604309
申请日：2009-10-22
申请人： Frank I-Kang Yu , David Nguyen , Jim Chin-Nan Ni , Abraham C. Ma , Ming-Shiang Shen
发明人： Frank I-Kang Yu , David Nguyen , Jim Chin-Nan Ni , Abraham C. Ma , Ming-Shiang Shen
IPC分类号： H01R13/44
CPC分类号： C09D17/001
摘要： A portable USB device with an improved configuration is described herein. According to one embodiment, a portable USB device includes a core unit having a USB plug connector coupled to one or more flash memory devices and a flash controller disposed therein, where the flash controller is capable of exchanging data with a host via the USB plug connector using a bulk-only-transfer protocol. The portable USB device further includes a housing for enclosing the core unit, including a front end opening to allow the USB plug connector to be deployed. The portable USB device further includes a core unit carrier for carrying the core unit for deploying and retracting the core unit, including a slide button to allow a finger of a user to slide the USB plug connector of the core unit in and out of the housing via the front end opening of the housing.
摘要翻译：本文描述了具有改进的配置的便携式USB设备。根据一个实施例，便携式USB设备包括具有耦合到一个或多个闪存设备的USB插头连接器和设置在其中的闪存控制器的核心单元，其中闪存控制器能够经由USB插头连接器与主机交换数据使用批量传输协议。便携式USB设备还包括用于封装核心单元的壳体，包括前端开口以允许USB插头连接器被部署。便携式USB装置还包括用于承载用于部署和缩回核心单元的核心单元的核心单元载体，包括滑动按钮，以允许用户的手指将核心单元的USB插头连接器滑入和移出壳体通过外壳的前端开口。

53. 发明申请

US20080195817A1 SD Flash Memory Card Manufacturing Using Rigid-Flex PCB 审中-公开
标题翻译：使用刚性PCB的SD闪存卡制造
公开(公告)号：US20080195817A1
公开(公告)日：2008-08-14
申请号：US12106517
申请日：2008-04-21
申请人： Siew S. Hiew , Nan Nan , Paul Hsueh , I-Kang Yu , Abraham C. Ma
发明人： Siew S. Hiew , Nan Nan , Paul Hsueh , I-Kang Yu , Abraham C. Ma
IPC分类号： G06F13/00 , H05K3/20
CPC分类号： H05K3/284 , G06K19/077 , G06K19/07732 , H01L23/49855 , H01L24/73 , H01L24/83 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/83101 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/0665 , H01L2924/14 , H01L2924/19041 , H05K1/023 , H05K1/117 , H05K1/189 , H05K3/0052 , H05K2201/10159 , H05K2201/2009 , H05K2203/1316 , Y10T29/49128 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A memory card (e.g., SD or MMC) device including a PCBA in which components are mounted on a “rigid-flex” PCB including at least one rigid PCB section and at least one flexible PCB section, and a housing that includes both a pre-molded upper housing portion and a molded casing. The rigid-flex PCB is mounted into the upper housing portion such that standard metal contacts disposed on an upper surface of the rigid-flex PCB are exposed through openings defined the upper housing portion, and such that the flexible section of the rigid-flex PCB over any contours formed on the inside surface of the upper housing portion. The molded casing is then formed by depositing thermoset plastic over the lower surface of rigid-flex PCB.
摘要翻译：包括PCBA的存储卡（例如，SD或MMC）装置，其中部件安装在包括至少一个刚性PCB部分和至少一个柔性PCB部分的“刚性柔性”PCB上，以及壳体，模制的上壳体部分和模制壳体。刚性柔性PCB被安装到上部壳体部分中，使得设置在刚性 - 柔性PCB的上表面上的标准金属触点通过限定上部壳体部分的开口暴露，并且使得柔性柔性PCB的柔性部分超过形成在上壳体部分的内表面上的任何轮廓。然后通过在刚性柔性PCB的下表面上沉积热固性塑料形成模制套管。

54. 发明申请

US20120284587A1 Super-Endurance Solid-State Drive with Endurance Translation Layer (ETL) and Diversion of Temp Files for Reduced Flash Wear 有权
标题翻译：超耐力固态驱动器，具有耐力翻译层（ETL）和降低闪光磨损的温度文件转移
公开(公告)号：US20120284587A1
公开(公告)日：2012-11-08
申请号：US13540569
申请日：2012-07-02
申请人： Frank Yu , Abraham C. Ma , Shimon Chen
发明人： Frank Yu , Abraham C. Ma , Shimon Chen
IPC分类号： G06F11/16 , G06F12/00
CPC分类号： G06F12/0246 , G06F3/0608 , G06F3/0631 , G06F3/0688 , G06F12/0868 , G06F2212/401 , G06F2212/7203 , G06F2212/7208 , G11C11/5678 , G11C13/0004 , G11C14/0018 , G11C29/765
摘要： A flash drive has increased endurance and longevity by reducing writes to flash. An Endurance Translation Layer (ETL) is created in a DRAM buffer and provides temporary storage to reduce flash wear. A Smart Storage Switch (SSS) controller assigns data-type bits when categorizing host accesses as paging files used by memory management, temporary files, File Allocation Table (FAT) and File Descriptor Block (FDB) entries, and user data files, using address ranges and file extensions read from FAT. Paging files and temporary files are never written to flash. Partial-page data is packed and sector mapped by sub-sector mapping tables that are pointed to by a unified mapping table that stores the data-type bits and pointers to data or tables in DRAM. Partial sectors are packed together to reduce DRAM usage and flash wear. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.
摘要翻译：闪存驱动器通过减少对闪存的写入来提高耐用性和使用寿命。耐久性翻译层（ETL）在DRAM缓冲区中创建，并提供临时存储以减少闪存磨损。智能存储交换机（SSS）控制器将主机访问分类为内存管理，临时文件，文件分配表（FAT）和文件描述符块（FDB）条目所使用的页面文件以及用户数据文件时，分配数据类型位，使用地址从FAT读取的范围和文件扩展名。分页文件和临时文件不会写入闪存。部分页面数据由通过统一映射表指向的子扇区映射表进行打包和扇区映射，统一映射表将数据类型位和指针存储到DRAM中的数据或表。部分行业包装在一起，以减少DRAM的使用和闪存磨损。 DRAM中的备用/交换区域可减少闪存磨损。当纠错失败时，调整参考电压。

55. 发明授权

US08543742B2 Flash-memory device with RAID-type controller 有权
标题翻译：具有RAID型控制器的闪存设备
公开(公告)号：US08543742B2
公开(公告)日：2013-09-24
申请号：US13494409
申请日：2012-06-12
申请人： Frank Yu , Abraham C. Ma , Shimon Chen
发明人： Frank Yu , Abraham C. Ma , Shimon Chen
IPC分类号： G06F13/28 , G06F3/00 , G06F11/00
CPC分类号： G06F13/28 , G06F3/0604 , G06F3/0658 , G06F3/0688 , G06F11/1064 , G06F12/0246 , G06F12/0607 , G06F13/385 , G06F2212/7208 , G06F2212/7211 , G06F2213/3802
摘要： A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.
摘要翻译：智能闪存驱动器具有一个或多个级别的智能存储交换机和较低级别的单芯片闪存设备（SCFD）。 SCFD包含执行低级坏块映射和磨损均衡以及逻辑到物理块映射的闪存和控制器。 SCFD向上游智能存储交换机报告其容量，布置和最大磨损级数（WLC）和坏块号（BBN），将该信息存储在结构寄存器中。智能存储交换机选择具有最大BBN作为目标的SCFD，而当WLC超过随时间上升的阈值时，具有最低最大WLC的SCFD作为用于损耗均衡的交换的来源。顶级智能存储交换机从低级智能存储交换机接收统一的容量，安排，WLC和BBN信息。数据是条带化的，并且可选地由所有级别的智能存储交换机中的冗余冗余阵列（RAID）控制器加扰。

56. 发明授权

US08321597B2 Flash-memory device with RAID-type controller 有权
标题翻译：具有RAID型控制器的闪存设备
公开(公告)号：US08321597B2
公开(公告)日：2012-11-27
申请号：US13197721
申请日：2011-08-03
申请人： Frank Yu , Abraham C. Ma , Shimon Chen
发明人： Frank Yu , Abraham C. Ma , Shimon Chen
IPC分类号： G06F13/28 , G06F9/00
CPC分类号： G06F13/28 , G06F3/0658 , G06F3/0679 , G06F11/108 , G06F12/0246 , G06F13/385 , G06F21/79 , G06F2212/7208 , G06F2212/7211
摘要： A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.
摘要翻译：智能闪存驱动器具有一个或多个级别的智能存储交换机和较低级别的单芯片闪存设备（SCFD）。 SCFD包含执行低级坏块映射和磨损均衡以及逻辑到物理块映射的闪存和控制器。 SCFD向上游智能存储交换机报告其容量，布置和最大磨损级数（WLC）和坏块号（BBN），将该信息存储在结构寄存器中。智能存储交换机选择具有最大BBN作为目标的SCFD，并且具有最低最大WLC的SCFD作为WLC超过随时间上升的阈值时的损耗平衡的交换源。顶级智能存储交换机从低级智能存储交换机接收统一的容量，安排，WLC和BBN信息。数据是条带化的，并且可选地由所有级别的智能存储交换机中的冗余冗余阵列（RAID）控制器加扰。

57. 发明授权

US09389952B2 Green NAND SSD application and driver 有权
标题翻译：绿色NAND SSD应用和驱动程序
公开(公告)号：US09389952B2
公开(公告)日：2016-07-12
申请号：US14543472
申请日：2014-11-17
申请人： Frank Yu , Abraham C. Ma , Shimon Chen , Yao-Tse Chang , Yan Zhou
发明人： Frank Yu , Abraham C. Ma , Shimon Chen , Yao-Tse Chang , Yan Zhou
IPC分类号： G11C29/00 , G06F11/10 , G11C14/00 , G06F12/14 , H03M13/11 , G11C29/52
CPC分类号： G06F11/1072 , G06F11/1016 , G06F11/1044 , G06F12/0246 , G06F12/0804 , G06F12/1009 , G06F12/1408 , G06F17/30132 , G06F2212/1036 , G06F2212/2022 , G06F2212/60 , G11C14/0018 , G11C29/52 , H03M13/1102 , H03M13/1515 , H03M13/152 , H03M13/19 , H03M13/353 , H03M13/356
摘要： A GNSD (Green NAND Solid State Drive) Driver coupled to host DRAM, and having a memory manager, a data grouper engine, a data ungrouper engine, a power manager, and a flush/resume manager. The GNSD driver is coupled to a GNSD application, and the host DRAM to a Non-Volatile Memory Device. The GNSD Driver further includes a compression/decompression engine, a de-duplication engine, an encryption/decryption engine, or a high-level error correction code engine. The encryption/decryption engine encrypts according to DES (Data Encryption Standard) or AES (Advanced Encryption Standard). A method of operating a GNSD Driver and a GNSD application coupled to DRAM of a host, includes coupling: Configuration and Register O/S Settings to the host and the GNSD Application; a data grouper and data ungrouper to the host DRAM and to Upper and a Lower Filter; a power manager and a memory manager to the host; a flush/resume manager to the DRAM; and the DRAM to an (Super Enhanced Endurance Device) SEED SSD (Solid State Drive).
摘要翻译：耦合到主机DRAM的GNSD（绿色NAND固态驱动器）驱动器，并具有存储器管理器，数据分组器引擎，数据非分组引擎，电源管理器和刷新/恢复管理器。 GNSD驱动程序与GNSD应用程序相连，主机DRAM耦合到非易失性存储器设备。 GNSD驱动程序还包括压缩/解压缩引擎，重复数据删除引擎，加密/解密引擎或高级错误纠正码引擎。加密/解密引擎根据DES（数据加密标准）或AES（高级加密标准）进行加密。操作与主机的DRAM耦合的GNSD驱动程序和GNSD应用程序的方法包括：将主机和GNSD应用程序的配置和注册O / S设置进行耦合; 数据分组器和数据未分组到主机DRAM和上和下滤波器; 电源管理器和内存管理器; DRAM的刷新/恢复管理器; 和DRAM（超级增强型耐力设备）SEED SSD（固态硬盘）。

58. 发明申请

US20160139982A1 GREEN NAND SSD APPLICATION AND DRIVER 有权
标题翻译：绿色NAND SSD应用与驱动
公开(公告)号：US20160139982A1
公开(公告)日：2016-05-19
申请号：US14543472
申请日：2014-11-17
申请人： Frank Yu , Abraham C. Ma , Shimon Chen , Yao-Tse Chang , Yan Zhou
发明人： Frank Yu , Abraham C. Ma , Shimon Chen , Yao-Tse Chang , Yan Zhou
IPC分类号： G06F11/10 , G11C29/52 , H03M13/11 , G11C14/00 , G06F12/14
CPC分类号： G06F11/1072 , G06F11/1016 , G06F11/1044 , G06F12/0246 , G06F12/0804 , G06F12/1009 , G06F12/1408 , G06F17/30132 , G06F2212/1036 , G06F2212/2022 , G06F2212/60 , G11C14/0018 , G11C29/52 , H03M13/1102 , H03M13/1515 , H03M13/152 , H03M13/19 , H03M13/353 , H03M13/356
摘要： A GNSD Driver coupled to host DRAM, and having a memory manager, a data grouper engine, a data ungrouper engine, a power manager, and a flush/resume manager. The GNSD driver is coupled to a GNSD application, and the host DRAM to a Non-Volatile Memory Device. The GNSD Driver further includes a compression/decompression engine, a de-duplication engine, an encryption/decryption engine, or a high-level error correction code engine. The encryption/decryption engine encrypts according to DES or AES. A method of operating a GNSD Driver and a GNSD application coupled to DRAM of a host, includes coupling: Configuration and Register O/S Settings to the host and the GNSD Application; a data grouper and data ungrouper to the host DRAM and to Upper and a Lower Filter; a power manager and a memory manager to the host; a flush/resume manager to the DRAM; and the DRAM to an SEED SSD.
摘要翻译：连接到主机DRAM的GNSD驱动器，并具有存储器管理器，数据分组器引擎，数据非分组引擎，电源管理器和刷新/恢复管理器。 GNSD驱动程序与GNSD应用程序相连，主机DRAM耦合到非易失性存储器设备。 GNSD驱动程序还包括压缩/解压缩引擎，重复数据删除引擎，加密/解密引擎或高级错误纠正码引擎。加密/解密引擎根据DES或AES进行加密。操作与主机的DRAM耦合的GNSD驱动程序和GNSD应用程序的方法包括：将主机和GNSD应用程序的配置和注册O / S设置进行耦合; 数据分组器和数据未分组到主机DRAM和上和下滤波器; 电源管理器和内存管理器; DRAM的刷新/恢复管理器; 和DRAM到SEED SSD。

59. 发明申请

US20120278543A1 Flash-Memory Device with RAID-type Controller 有权
标题翻译：具有RAID型控制器的闪存设备
公开(公告)号：US20120278543A1
公开(公告)日：2012-11-01
申请号：US13494409
申请日：2012-06-12
申请人： Frank Yu , Abraham C. Ma , Shimon Chen
发明人： Frank Yu , Abraham C. Ma , Shimon Chen
IPC分类号： G06F12/02
CPC分类号： G06F13/28 , G06F3/0604 , G06F3/0658 , G06F3/0688 , G06F11/1064 , G06F12/0246 , G06F12/0607 , G06F13/385 , G06F2212/7208 , G06F2212/7211 , G06F2213/3802
摘要： A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.
摘要翻译：智能闪存驱动器具有一个或多个级别的智能存储交换机和较低级别的单芯片闪存设备（SCFD）。 SCFD包含执行低级坏块映射和磨损均衡以及逻辑到物理块映射的闪存和控制器。 SCFD向上游智能存储交换机报告其容量，布置和最大磨损级数（WLC）和坏块号（BBN），将该信息存储在结构寄存器中。智能存储交换机选择具有最大BBN作为目标的SCFD，并且具有最低最大WLC的SCFD作为WLC超过随时间上升的阈值时的损耗平衡的交换源。顶级智能存储交换机从低级智能存储交换机接收统一的容量，安排，WLC和BBN信息。数据是条带化的，并且可选地由所有级别的智能存储交换机中的冗余冗余阵列（RAID）控制器加扰。

60. 发明申请

US20110302358A1 Flash-Memory Device with RAID-type Controller 有权
标题翻译：具有RAID型控制器的闪存设备
公开(公告)号：US20110302358A1
公开(公告)日：2011-12-08
申请号：US13197721
申请日：2011-08-03
申请人： Frank Yu , Abraham C. Ma , Shimon Chen
发明人： Frank Yu , Abraham C. Ma , Shimon Chen
IPC分类号： G06F12/00
CPC分类号： G06F13/28 , G06F3/0658 , G06F3/0679 , G06F11/108 , G06F12/0246 , G06F13/385 , G06F21/79 , G06F2212/7208 , G06F2212/7211
摘要： A smart flash drive has one or more levels of smart storage switches and a lower level of single-chip flash devices (SCFD's). A SCFD contains flash memory and controllers that perform low-level bad-block mapping and wear-leveling and logical-to-physical block mapping. The SCFD report their capacity, arrangement, and maximum wear-level count (WLC) and bad block number (BBN) to the upstream smart storage switch, which stores this information in a structure register. The smart storage switch selects the SCFD with the maximum BBN as the target and the SCFD with the lowest maximum WLC as the source of a swap for wear leveling when a WLC exceeds a threshold that rises over time. A top-level smart storage switch receives consolidated capacity, arrangement, WLC, and BBN information from lower-level smart storage switch. Data is striped and optionally scrambled by Redundant Array of Individual Disks (RAID) controllers in all levels of smart storage switches.
摘要翻译：智能闪存驱动器具有一个或多个级别的智能存储交换机和较低级别的单芯片闪存设备（SCFD）。 SCFD包含执行低级坏块映射和磨损均衡以及逻辑到物理块映射的闪存和控制器。 SCFD向上游智能存储交换机报告其容量，布置和最大磨损级数（WLC）和坏块号（BBN），将该信息存储在结构寄存器中。智能存储交换机选择具有最大BBN作为目标的SCFD，并且具有最低最大WLC的SCFD作为WLC超过随时间上升的阈值时的损耗平衡的交换源。顶级智能存储交换机从低级智能存储交换机接收统一的容量，安排，WLC和BBN信息。数据是条带化的，并且可选地由所有级别的智能存储交换机中的冗余冗余阵列（RAID）控制器加扰。

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