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51. 发明申请

US20130287365A1 INFORMATION PROCESSING 有权
标题翻译：信息处理
公开(公告)号：US20130287365A1
公开(公告)日：2013-10-31
申请号：US13457520
申请日：2012-04-27
申请人： Santosh S. Basapur , Young S. Lee , Shirley A. Chaysinh , Hiren M. Mandalia , Ashley B. Novak , Narayanan Venkitaraman
发明人： Santosh S. Basapur , Young S. Lee , Shirley A. Chaysinh , Hiren M. Mandalia , Ashley B. Novak , Narayanan Venkitaraman
IPC分类号： H04N9/80 , G06T11/20 , G06F3/041
CPC分类号： H04N21/8547 , G06F2203/04104 , G06T11/206 , H04N5/775 , H04N21/251 , H04N21/25891 , H04N21/2665 , H04N21/4312 , H04N21/4756 , H04N21/6582 , H04N21/8133
摘要： Disclosed are methods and apparatus for displaying information relating to a portion of a multimedia presentation. A progress bar is provided and displayed. A length of the progress bar is representative of a duration of the multimedia presentation. A user selects a first and a second point in the multimedia presentation, thereby defining a portion of the presentation. Depending on the selection, one or more communications (e.g., comments, online postings, etc.) may be identified. Each of these communications may have been composed in relation to at least a point of the multimedia presentation that is within the defined portion. Information depending on those identified communications may then be displayed to the user.
摘要翻译：公开了用于显示与多媒体呈现的一部分有关的信息的方法和装置。提供并显示进度条。进度条的长度代表多媒体呈现的持续时间。用户选择多媒体呈现中的第一和第二点，由此定义呈现的一部分。根据选择，可以识别一个或多个通信（例如，注释，在线发布等）。这些通信中的每一个可以相对于在定义的部分内的多媒体呈现的至少一个点来组成。然后可以向用户显示取决于所识别的通信的信息。

52. 发明申请

US20130089988A1 SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION 有权
标题翻译：通过可转化氢终止方式选择性硅
公开(公告)号：US20130089988A1
公开(公告)日：2013-04-11
申请号：US13439079
申请日：2012-04-04
申请人： Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01L21/3081 , H01L21/32137
摘要： Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

53. 发明申请

US20130052827A1 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN 有权
标题翻译：选择性抑制含有硅和氧的材料的干蚀速率
公开(公告)号：US20130052827A1
公开(公告)日：2013-02-28
申请号：US13449543
申请日：2012-04-18
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/308
CPC分类号： H01L21/31116 , H01J37/32357 , H01L21/3065 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该技术提高其选择性的材料的实例包括氮化硅和硅。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性固体副产物。第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

54. 发明申请

US20120325773A1 INTEGRATED PROCESS MODULATION FOR PSG GAPFILL 失效
标题翻译： PSG GAPFILL的集成过程调制
公开(公告)号：US20120325773A1
公开(公告)日：2012-12-27
申请号：US13490426
申请日：2012-06-06
申请人： Young S. Lee , Anchuan Wang , Lan Chia Chan , Shankar Venkataraman
发明人： Young S. Lee , Anchuan Wang , Lan Chia Chan , Shankar Venkataraman
IPC分类号： C23C16/50 , C23C16/56
CPC分类号： C23C16/56 , C23C16/045 , C23C16/401 , H01L21/02129 , H01L21/02274 , H01L21/0234 , H01L21/76224
摘要： A method of depositing a phosphosilicate glass (PSG) film on a substrate disposed in a substrate processing chamber includes depositing a first portion of the PSG film over the substrate using a high-density plasma process. Thereafter, a portion of the first portion of the PSG film may be etched back. The etch back process may include flowing a halogen precursor to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the etch back. The method also includes flowing a halogen scavenger to the substrate processing chamber to react with residual halogen in the substrate processing chamber, and exposing the first portion of the PSG film to a phosphorus-containing gas to provide a substantially uniform phosphorus concentration throughout the first portion of the PSG film.
摘要翻译：在设置在衬底处理室中的衬底上沉积磷硅玻璃（PSG）膜的方法包括使用高密度等离子体工艺在衬底上沉积第一部分PSG膜。此后，PSG膜的第一部分的一部分可被回蚀刻。回蚀工艺可以包括将卤素前体流动到衬底处理室，从卤素前体形成高密度等离子体，并且在回蚀刻之后使卤素前体终止流动。该方法还包括使卤素清除剂流到衬底处理室以与衬底处理室中的残留卤素反应，并将PSG膜的第一部分暴露于含磷气体，以在整个第一部分中提供基本均匀的磷浓度的PSG电影。

55. 发明授权

US07972968B2 High density plasma gapfill deposition-etch-deposition process etchant 失效
标题翻译：高密度等离子体填隙沉积 - 蚀刻沉积工艺蚀刻剂
公开(公告)号：US07972968B2
公开(公告)日：2011-07-05
申请号：US12193162
申请日：2008-08-18
申请人： Young S. Lee , Ying Rui , Dmitry Lubomirsky , Daniel J. Hoffman , Jang Gyoo Yang , Anchuan Wang
发明人： Young S. Lee , Ying Rui , Dmitry Lubomirsky , Daniel J. Hoffman , Jang Gyoo Yang , Anchuan Wang
IPC分类号： H01L21/461
CPC分类号： H01L21/76224 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.
摘要翻译：将介电膜沉积在设置在基板处理室中的基板上的相邻凸起结构之间的间隙中的高密度等离子体蚀刻/蚀刻/蚀刻方法。该方法通过从流入处理室的第一气体混合物形成高密度等离子体，将电介质膜的第一部分沉积在间隙内，通过流过包含CxFy的蚀刻剂气体来蚀刻沉积的电介质膜的第一部分，的x至y大于或等于1：2，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将第二部分电介质膜沉积在第一部分上。

56. 发明授权

US07967913B2 Remote plasma clean process with cycled high and low pressure clean steps 失效
标题翻译：远程等离子清洁工艺，循环高低压清洁步骤
公开(公告)号：US07967913B2
公开(公告)日：2011-06-28
申请号：US12508381
申请日：2009-07-23
申请人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
发明人： Zhong Qiang Hua , Sanjay Kamath , Young S. Lee , Ellie Y. Yieh , Hien-Minh Huu Le , Anjana M. Patel , Sudhir R. Gondhalekar
IPC分类号： B08B6/00
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
摘要翻译：一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

57. 发明授权

US07704897B2 HDP-CVD SiON films for gap-fill 失效
标题翻译：用于间隙填充的HDP-CVD SiON膜
公开(公告)号：US07704897B2
公开(公告)日：2010-04-27
申请号：US12035603
申请日：2008-02-22
申请人： Hemant P. Mungekar , Young S. Lee , Agnieszka Jakubowicz , Zhong Qiang Hua , Rionard Purnawan , Sanjay Kamath , Walter Zygmunt
发明人： Hemant P. Mungekar , Young S. Lee , Agnieszka Jakubowicz , Zhong Qiang Hua , Rionard Purnawan , Sanjay Kamath , Walter Zygmunt
IPC分类号： H01L21/316
CPC分类号： C23C16/045 , C23C16/308 , C23C16/507 , H01L21/3145 , H01L27/14627 , H01L27/14629 , Y10T29/41
摘要： The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.
摘要翻译：本发明涉及使用HDP-CVD工艺在衬底上沉积低应力/高折射率多层膜的方法。多层膜包括两个衬里层和大块间隙填充层，并且HDP-CVD工艺在沉积至少第二衬里层期间采用降低的衬底偏置功率。在降低的沉积温度下发生三层沉积，这进一步降低了多层膜的应力。较低的应力导致较少的缺陷率，这提高了膜保持辐射的光学限制的能力。

58. 发明申请

US20090215281A1 HDP-CVD SION FILMS FOR GAP-FILL 失效
标题翻译：用于GAP-FILL的HDP-CVD SION膜
公开(公告)号：US20090215281A1
公开(公告)日：2009-08-27
申请号：US12035603
申请日：2008-02-22
申请人： HEMANT P. MUNGEKAR , Young S. Lee , Agnieszka Jakubowicz , Zhong Qiang Hua , Rionard Purnawan , Sanjay Kamath , Walter Zygmunt
发明人： HEMANT P. MUNGEKAR , Young S. Lee , Agnieszka Jakubowicz , Zhong Qiang Hua , Rionard Purnawan , Sanjay Kamath , Walter Zygmunt
IPC分类号： H01L21/469 , H01L21/00 , H05H1/24
CPC分类号： C23C16/045 , C23C16/308 , C23C16/507 , H01L21/3145 , H01L27/14627 , H01L27/14629 , Y10T29/41
摘要： The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.
摘要翻译：本发明涉及使用HDP-CVD工艺在衬底上沉积低应力/高折射率多层膜的方法。多层膜包括两个衬里层和大块间隙填充层，并且HDP-CVD工艺在沉积至少第二衬里层期间采用降低的衬底偏置功率。在降低的沉积温度下发生三层沉积，这进一步降低了多层膜的应力。较低的应力导致较少的缺陷率，这提高了膜保持辐射的光学限制的能力。

59. 发明申请

US20090163041A1 LOW WET ETCH RATE SILICON NITRIDE FILM 失效
标题翻译：低湿蚀刻硅氮化硅膜
公开(公告)号：US20090163041A1
公开(公告)日：2009-06-25
申请号：US11962674
申请日：2007-12-21
申请人： Hemant P. Mungekar , Jing Wu , Young S. Lee , Anchuan Wang
发明人： Hemant P. Mungekar , Jing Wu , Young S. Lee , Anchuan Wang
IPC分类号： H01L21/31
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/505 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/31111
摘要： The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.
摘要翻译：本发明涉及在低于600℃的衬底温度下使用高密度等离子体化学气相沉积技术在衬底上沉积低湿蚀刻速率的氮化硅膜的方法。该方法还涉及维持相对较高的氮与硅比例等离子体和低过程压力。

60. 发明申请

US20080121179A1 GAS BAFFLE AND DISTRIBUTOR FOR SEMICONDUCTOR PROCESSING CHAMBER 失效
标题翻译：用于半导体加工室的气体和分配器
公开(公告)号：US20080121179A1
公开(公告)日：2008-05-29
申请号：US11564150
申请日：2006-11-28
申请人： SOONAM PARK , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
发明人： SOONAM PARK , Farhan Ahmad , Hemant P. Mungekar , Sanjay Kamath , Young S. Lee , Siqing Lu
IPC分类号： C23C16/52 , C23C16/44
CPC分类号： C23C16/4405 , C23C16/45563 , C23C16/45591 , H01J37/3244 , H01J37/32449
摘要： Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.
摘要翻译：提供了用于在半导体处理室中分配气体的装置和方法。在一个实施例中，用于气体处理室的气体分配器包括主体。主体包括具有气体偏转表面的挡板以将气体的流动从第一方向转移到第二方向。气体偏转表面包括凹面。凹面包括至少约75％的气体偏转表面的表面积。凹面大致使气体朝向室壁偏转，并且提供了来自挡板的减少的金属原子污染物，从而可以减少季节时间。

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