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51. 发明申请

US20080036889A1 Solid-state imaging device and driving method for a solid-state imaging device 有权
标题翻译：固态成像装置及其固体成像装置的驱动方法
公开(公告)号：US20080036889A1
公开(公告)日：2008-02-14
申请号：US11889202
申请日：2007-08-09
申请人： Takayoshi Yamada , Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga
发明人： Takayoshi Yamada , Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga
IPC分类号： H04N5/335 , H04N3/14
CPC分类号： H04N5/35572 , H04N5/374 , H04N5/37452
摘要： A solid-state imaging device that enables more images to be photographed and a reading time to be shortened by effectively using storage cells is provided. By combining pieces of information which correspond to signal charges output from a photoelectric converter and are sequentially stored in storage cells, it is possible to store more pieces of information than the number of storage cells. Also, by reading the combined information stored in one storage cell, it is possible to read more pieces of information by a single reading operation.
摘要翻译：提供一种能够通过有效地使用存储单元来拍摄更多图像并缩短读取时间的固态成像装置。通过组合对应于从光电转换器输出的信号电荷的信息并且顺序地存储在存储单元中，可以存储比存储单元数更多的信息。此外，通过读取存储在一个存储单元中的组合信息，可以通过单次读取操作读取更多的信息。

52. 发明授权

US07262404B2 Photodetector manufacturable by semiconductor processes 有权
标题翻译：光电探测器可通过半导体工艺制造
公开(公告)号：US07262404B2
公开(公告)日：2007-08-28
申请号：US10990679
申请日：2004-11-18
申请人： Takumi Yamaguchi , Shigetaka Kasuga , Takahiko Murata
发明人： Takumi Yamaguchi , Shigetaka Kasuga , Takahiko Murata
IPC分类号： H01L31/00 , H01L31/0232
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L31/02327
摘要： A photodetector includes a semiconductor substrate having photo-cells (1a, 1b, 1c). Each photo-cell is provided with a filter layer 20 that transmits light in a wavelength range predetermined for the photo-cell, and a photoelectric converter 17 that generates a signal charge according to an intensity of the light transmitted through the filter layer 20. Thickness (ta, tb, tc) of the filter layers 20 are corresponding to the wavelength ranges predetermined for respective photo-cells. By such a structure, it is possible to provide cost effective photodetectors that can be manufactured without managing materials for pigments and dyestuff for different colors when making color filters.
摘要翻译：光检测器包括具有光电池（1a，1b，1c）的半导体衬底。每个光电池设置有透射对于光电池预定的波长范围的光的滤光层20以及根据透过滤光层20的光的强度产生信号电荷的光电转换器17。滤光层20的厚度（ta，tb，tc）对应于各光电池的波长范围。通过这样的结构，可以提供成本有效的光电检测器，其可以在制造滤色器时不管理颜料和用于不同颜色的染料的材料来制造。

53. 发明申请

US20070122935A1 Manufacturing method of solid-state imaging device, solid-state imaging device, and camera 审中-公开
标题翻译：固态成像装置，固态成像装置和相机的制造方法
公开(公告)号：US20070122935A1
公开(公告)日：2007-05-31
申请号：US11602179
申请日：2006-11-21
申请人： Masahiro Kasano , Yuichi Inaba , Keisuke Tanaka , Takumi Yamaguchi
发明人： Masahiro Kasano , Yuichi Inaba , Keisuke Tanaka , Takumi Yamaguchi
IPC分类号： H01L21/00
CPC分类号： H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14685 , H01L27/14687
摘要： A manufacturing method of a solid-state imaging device prevents generation of a space due to insufficient filling of a conductive material. Materials constituting a multilayer film 41 are sequentially deposited on a semiconductor substrate, and portions respectively included in a plug formation intended region and a surrounding region that surrounds the plug formation intended region are removed from the deposited multilayer film 41. Next, the plug formation intended region and the surrounding region from which the portions have been removed is refilled with a single insulating material, and a hole is formed on the plug formation intended region by etching. Then, the formed hole is filled with a conductive material to therefore form a plug.
摘要翻译：固态成像装置的制造方法防止由于导电材料的填充不充分而产生空间。构成多层膜41的材料依次沉积在半导体衬底上，并且从沉积的多层膜41中去除分别包含在插塞形成预期区域中的部分和围绕插塞形成区域的周围区域。接下来，使用单个绝缘材料重新填充已经去除了部分的插塞形成预期区域和周围区域，并且通过蚀刻在插塞形成预期区域上形成孔。然后，形成的孔填充有导电材料，从而形成插头。

54. 发明授权

US07199411B2 Solid-state imaging device and camera 有权
标题翻译：固态成像装置和相机
公开(公告)号：US07199411B2
公开(公告)日：2007-04-03
申请号：US10930814
申请日：2004-09-01
申请人： Shinji Yoshida , Mitsuyoshi Mori , Takumi Yamaguchi
发明人： Shinji Yoshida , Mitsuyoshi Mori , Takumi Yamaguchi
IPC分类号： H01L31/062
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/1463
摘要： A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of a first conductivity type, a transistor and a device isolation region whose depth is less than a depth of the charge accumulation region of the first conductivity type, at which an impurity density is at maximum.
摘要翻译：在硅基板上形成固态成像装置，用于提供具有器件隔离结构并导致少量泄漏电流的MOS型固态成像器件。固态成像装置包括：对于每个像素，成像区域包括具有第一导电类型的电荷累积区域的光电二极管，晶体管和器件隔离区域，其深度小于电荷累积区域的深度杂质密度最大的第一导电类型。

55. 发明申请

US20070020795A1 Solid-state imaging device and its manufacturing method 审中-公开
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20070020795A1
公开(公告)日：2007-01-25
申请号：US10568961
申请日：2005-01-07
申请人： Mitsuyoshi Mori , Takumi Yamaguchi , Shinji Yoshida
发明人： Mitsuyoshi Mori , Takumi Yamaguchi , Shinji Yoshida
IPC分类号： H01L21/00
CPC分类号： H01L27/1463 , H01L21/76205 , H01L27/14689
摘要： In a method for manufacturing a solid-state imaging device of the present invention, a pad insulting film 2 made of an oxide film and an anti-oxidizing film 3 made of a nitride film are deposited on a n-type semiconductor substrate 1. Then, an opening 4 is formed to expose an element isolation formation region of the semiconductor substrate 1. Next, an anti-oxidizing film (not shown) for burying the opening 4 is formed on the substrate and anisotropic etching is performed to form a sidewall 5. Subsequently, a trench 6 is formed using the anti-oxidizing film 3 and the sidewall 5 as a mask. Then, a p-type impurity is implanted into a part of the semiconductor substrate 1 which is exposed at the side face of the trench 6 and a thermal oxide film is formed in the surface portion of the trench 6 in the semiconductor substrate 1. Thereafter, the trench 6 is buried with a burying film 8.
摘要翻译：在本发明的固体摄像装置的制造方法中，在n型半导体基板1上沉积由氧化膜构成的焊盘绝缘膜2和由氮化物膜构成的抗氧化膜3。然后，形成开口4以露出半导体衬底1的元件隔离形成区域。接下来，在基板上形成用于埋入开口4的抗氧化膜（未示出），并执行各向异性蚀刻以形成侧壁5。随后，使用抗氧化膜3和侧壁5作为掩模形成沟槽6。然后，将p型杂质注入到在沟槽6的侧面露出的半导体衬底1的一部分中，并且在半导体衬底1中的沟槽6的表面部分中形成热氧化膜。此后，沟槽6被埋入掩埋膜8。

56. 发明申请

US20060278948A1 SOLID-STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：固态图像传感器及其制造方法
公开(公告)号：US20060278948A1
公开(公告)日：2006-12-14
申请号：US11422708
申请日：2006-06-07
申请人： Takumi YAMAGUCHI , Takahiko MURATA , Shigetaka KASUGA
发明人： Takumi YAMAGUCHI , Takahiko MURATA , Shigetaka KASUGA
IPC分类号： H01L31/00
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.
摘要翻译：本发明的目的是提供一种实现敏感度显着提高的小型固态图像传感器。本发明的固态图像传感器包括形成有光电转换单元的半导体衬底，形成在半导体衬底之上并具有形成为位于各个光电转换单元之上的孔的遮光膜，以及形成在孔中的高折射率层。这里，每个孔径在从通过孔进入光电转换单元的光的波长转换的真空中的光波长中的最大波长较小，高折射率由高折射率材料具有折射率，其允许通过孔径传输具有最大波长的光。

57. 发明申请

US20060268133A1 Noise reduction circuit 审中-公开
标题翻译：降噪电路
公开(公告)号：US20060268133A1
公开(公告)日：2006-11-30
申请号：US11378392
申请日：2006-03-20
申请人： Takahiko Murata , Takumi Yamaguchi , Shigetaka Kasuga
发明人： Takahiko Murata , Takumi Yamaguchi , Shigetaka Kasuga
IPC分类号： H04N5/217
CPC分类号： H04N5/365 , H04N5/347
摘要： A noise reduction circuit includes a plurality of electric charge accumulating sections and a plurality of switching sections. In the noise reduction circuit, electric charge in an amount corresponding to a signal containing a noise is accumulated in each of the electric charge accumulating sections, and thereafter the switching sections are turned on to connect the electric charge accumulating sections in parallel or in series with each other, thereby outputting a signal corresponding to the average of, or the sum total of, the amounts of electric charge accumulated in the respective electric charge accumulating sections.
摘要翻译：噪声降低电路包括多个电荷累积部分和多个切换部分。在降噪电路中，在每个电荷累积部分中累积与包含噪声的信号相对应的量的电荷，此后开关部分被接通以将电荷累积部分并联或串联连接从而输出与累积在各个电荷累积部分中的电荷量的平均值或总和相对应的信号。

58. 发明申请

US20060205107A1 Solid-state imaging device, manufacturing method of solid-state imaging device, and camera employing same 有权
标题翻译：固态成像装置，固态成像装置的制造方法以及使用该装置的相机
公开(公告)号：US20060205107A1
公开(公告)日：2006-09-14
申请号：US10536962
申请日：2004-09-13
申请人： Yuuichi Inaba , Masahiro Kasano , Shinji Yoshida , Takumi Yamaguchi
发明人： Yuuichi Inaba , Masahiro Kasano , Shinji Yoshida , Takumi Yamaguchi
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L27/14685 , G02B5/201 , G02B5/285 , H01L27/14621 , H04N5/2254
摘要： A solid-state imaging device includes a color filter that selectively transmits incoming light. The color filter includes two λ/4 multilayer films, and an insulation layer sandwiched between the two λ/4 multilayer films. Here, each of the λ/4 multilayer films is constituted by a plurality of dielectric layers, and the optical thickness of the insulation layer is not λ/4. Since this color filter has a smaller thickness, the solid-state imaging device has a smaller size.
摘要翻译：固态成像装置包括选择性地传输入射光的滤色器。滤色器包括两个λ/ 4多层膜和夹在两个λ/ 4多层膜之间的绝缘层。这里，每个λ/ 4多层膜由多个电介质层构成，绝缘层的光学厚度不是λ/ 4。由于该滤色器具有较小的厚度，所以固态成像装置具有较小的尺寸。

59. 发明申请

US20060163628A1 Solid state imaging apparatus and method for fabricating the same 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20060163628A1
公开(公告)日：2006-07-27
申请号：US11335533
申请日：2006-01-20
申请人： Mitsuyoshi Mori , Mikiya Uchida , Kazuo Fujiwara , Takumi Yamaguchi
发明人： Mitsuyoshi Mori , Mikiya Uchida , Kazuo Fujiwara , Takumi Yamaguchi
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14685 , H01L27/14689 , H01L31/02164
摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
摘要翻译：本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。

60. 发明申请

US20060152611A1 Image pickup device 审中-公开
标题翻译：图像拾取装置
公开(公告)号：US20060152611A1
公开(公告)日：2006-07-13
申请号：US10534892
申请日：2003-11-17
申请人： Koujirou Yoneda , Toshiya Fujii , Takahiro Iwasawa , Takumi Yamaguchi
发明人： Koujirou Yoneda , Toshiya Fujii , Takahiro Iwasawa , Takumi Yamaguchi
IPC分类号： H04N5/335
CPC分类号： H04N5/3741 , H04N5/359
摘要： An imaging element includes a photoelectric conversion element, a readout transistor, an accumulated element, a detection transistor, and a reset transistor. The readout transistor reads a signal charge when a gate potential to be supplied to the gate terminal is changed from a first state to a second state. The detection transistor detects a voltage signal after the gate potential to be supplied to the gate terminal of the readout transistor is changed from the second state to the first state. A reset potential supplied from the reset transistor to the accumulated element has an intermediate potential between the gate potential in the first state that is supplied to the gate terminal of the readout transistor and a predetermined VDD potential.
摘要翻译：成像元件包括光电转换元件，读出晶体管，累积元件，检测晶体管和复位晶体管。当提供给栅极端子的栅极电位从第一状态改变到第二状态时，读出晶体管读取信号电荷。在提供给读出晶体管的栅极端子的栅极电位从第二状态变为第一状态之后，检测晶体管检测电压信号。从复位晶体管向累积元件提供的复位电位在提供给读出晶体管的栅极端子的第一状态下的栅极电位与预定的VDD电位之间具有中间电位。

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