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51. 发明授权

US06653714B2 Lateral bipolar transistor 失效
标题翻译：侧面双极晶体管
公开(公告)号：US06653714B2
公开(公告)日：2003-11-25
申请号：US10300440
申请日：2002-11-20
申请人： Toshinobu Matsuno , Takeshi Fukuda , Katsunori Nishii , Kaoru Inoue , Daisuke Ueda
发明人： Toshinobu Matsuno , Takeshi Fukuda , Katsunori Nishii , Kaoru Inoue , Daisuke Ueda
IPC分类号： H01L27082
CPC分类号： H01L29/66242 , H01L29/7317
摘要： A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to substantially cover the first semiconductor region; and a second semiconductor region of a second conductivity type different from the first conductivity type, a second semiconductor region being selectively formed, wherein: the second insulative region has a first opening which reaches a surface of the first semiconductor region, and the first semiconductor region has a second opening which reaches the underlying first insulative region, the second opening being provided in a position corresponding to the first opening of the second insulative region; the second semiconductor region is formed so as to fill the first opening and the second opening, thereby functioning as a base region; a lower portion of the second semiconductor region which at least fills the second opening is formed by lateral growth from a face of the first semiconductor region defining a side wall of the second opening; and the first semiconductor region includes an emitter region and a collector region formed therein.
摘要翻译：横向双极晶体管包括：衬底; 形成在所述基板上的第一绝缘区域; 选择性地形成在所述第一绝缘区域上的第一导电类型的第一半导体区域; 形成为基本上覆盖所述第一半导体区域的第二绝缘区域; 以及与第一导电类型不同的第二导电类型的第二半导体区域，选择性地形成第二半导体区域，其中：第二绝缘区域具有到达第一半导体区域的表面的第一开口，第一半导体区域具有到达下面的第一绝缘区域的第二开口，第二开口设置在与第二绝缘区域的第一开口对应的位置; 第二半导体区域形成为填充第一开口和第二开口，从而起基底区域的作用; 至少填充第二开口的第二半导体区域的下部通过从限定第二开口的侧壁的第一半导体区域的表面横向生长形成; 并且第一半导体区域包括形成在其中的发射极区域和集电极区域。

52. 发明授权

US06503808B1 Lateral bipolar transistor and method for producing the same 失效
标题翻译：侧面双极晶体管及其制造方法
公开(公告)号：US06503808B1
公开(公告)日：2003-01-07
申请号：US09687251
申请日：2000-10-13
申请人： Toshinobu Matsuno , Takeshi Fukuda , Katsunori Nishii , Kaoru Inoue , Daisuke Ueda
发明人： Toshinobu Matsuno , Takeshi Fukuda , Katsunori Nishii , Kaoru Inoue , Daisuke Ueda
IPC分类号： H01L21331
CPC分类号： H01L29/66242 , H01L29/7317
摘要： A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to substantially cover the first semiconductor region; and a second semiconductor region of a second conductivity type different from the first conductivity type, a second semiconductor region being selectively formed, wherein: the second insulative region has a first opening which reaches a surface of the first semiconductor region, and the first semiconductor region has a second opening which reaches the underlying first insulative region, the second opening being provided in a position corresponding to the first opening of the second insulative region; the second semiconductor region is formed so as to fill the first opening and the second opening, thereby functioning as a bass region; a lower portion of the second semiconductor region which at least fills the second opening is formed by lateral growth from a face of the first semiconductor region defining a side wall of the second opening; and the first semiconductor region includes an emitter region and a collector region formed therein.
摘要翻译：横向双极晶体管包括：衬底; 形成在所述基板上的第一绝缘区域; 选择性地形成在所述第一绝缘区域上的第一导电类型的第一半导体区域; 形成为基本上覆盖所述第一半导体区域的第二绝缘区域; 以及与第一导电类型不同的第二导电类型的第二半导体区域，选择性地形成第二半导体区域，其中：第二绝缘区域具有到达第一半导体区域的表面的第一开口，第一半导体区域具有到达下面的第一绝缘区域的第二开口，第二开口设置在与第二绝缘区域的第一开口对应的位置; 第二半导体区域形成为填充第一开口和第二开口，从而起低音区域的作用; 至少填充第二开口的第二半导体区域的下部通过从限定第二开口的侧壁的第一半导体区域的表面横向生长形成; 并且第一半导体区域包括形成在其中的发射极区域和集电极区域。

53. 发明授权

US6072350A Electrostatic breakdown protection for a semiconductor device 有权
标题翻译：半导体器件的静电击穿保护
公开(公告)号：US6072350A
公开(公告)日：2000-06-06
申请号：US335725
申请日：1999-06-18
申请人： Takeshi Fukuda
发明人： Takeshi Fukuda
IPC分类号： H01L21/822 , H01L27/02 , H01L27/04 , H03K5/08
CPC分类号： H01L27/0255 , H01L27/0259
摘要： A SUB wiring provided outside of a common discharge line formed on outer periphery of a chip in parallel to the latter. To the common discharge line, only voltage clamping elements and diode elements as electrostatic protection elements are connected. The common discharge line is in floating condition for rising withstanding voltage. On the other hand, to the SUB wiring, additional circuits, such as BBG circuit and so forth, consisting of transistors are connected to connect the latter to the substrate. With these two wirings, the width of the common discharge line can be made narrower to limit an increase of a chip area. By this, it is possible to improve resistance to electrostatic breakdown without increasing chip area.
摘要翻译：设置在与芯片的外周平行的芯片的外周上形成的公共放电线的外侧的SUB布线。对于公共放电线，仅连接作为静电保护元件的电压钳位元件和二极管元件。普通放电线处于浮动状态，以提高耐压。另一方面，对于SUB布线，由晶体管构成的诸如BBG电路等的附加电路被连接以将后者连接到基板。通过这两条布线，可以使公共放电线的宽度变窄以限制芯片面积的增加。由此，可以在不增加芯片面积的情况下提高抗静电电击。

54. 发明授权

US5954267A Method for spraying starting material particles in continuous hydrothermal reaction and apparatus therefor 失效
标题翻译：在连续水热反应中喷射原料颗粒的方法及其设备
公开(公告)号：US5954267A
公开(公告)日：1999-09-21
申请号：US974854
申请日：1997-11-20
申请人： Nakamichi Yamasaki , Tsuneaki Mochida , Akihiro Maeda , Takeshi Fukuda , Tsuyoshi Morimura
发明人： Nakamichi Yamasaki , Tsuneaki Mochida , Akihiro Maeda , Takeshi Fukuda , Tsuyoshi Morimura
IPC分类号： B01F5/18 , B01J3/00 , B01J3/02 , B01J19/26 , B05B7/16 , C01F7/02 , C01G1/02 , C30B7/10 , B05B1/24 , B05B15/00
CPC分类号： B05B7/16 , B01J19/26 , B01J3/008 , B01J3/02 , B01J2219/00094 , B01J2219/00105 , B01J2219/00108 , B01J2219/00119 , B01J2219/00155 , B01J2219/00162 , Y02P20/544
摘要： A method for spraying starting material particles in a continuous hydrothermal reaction, comprising spraying an aqueous fluid pressurized and heated in excess of the saturated vapor temperature and a starting material slurry pressurized at ordinary temperature. A starting material slurry feed orifice is provided in a central portion of an aqueous fluid spray orifice to spray and mix the aqueous fluid and the staring material slurry. In order to avoid entry of heat into the starting material fluid from the aqueous fluid, a heat-insulating layer is provided between feed paths for the respective two fluids. According to the above method, the starting material slurry is sprayed particularly under subcritical to supercritical conditions beyond the saturated vapor temperature to form fine particles without agglomeration thereof, whereby a hydrothermal reaction can be continuously and efficiently effected.
摘要翻译：一种用于在连续水热反应中喷射原料颗粒的方法，包括喷雾加压和加热超过饱和蒸汽温度的水溶液和在常温下加压的原料浆料。在水性流体喷射孔的中心部分提供原料浆料进料孔，以喷射和混合含水流体和起始材料浆料。为了避免从含水流体引入原料流体中的热量，在相应的两种流体的进料路径之间设置绝热层。根据上述方法，将原料浆料特别是在亚临界状态下超过饱和蒸汽温度的超临界条件下喷涂，形成细小颗粒而不凝聚，由此可以连续有效地进行水热反应。

55. 发明授权

US5889709A Data latch circuit device with flip-flop of semi-conductor memory of synchronous DRAM 失效
标题翻译：具有同步DRAM半导体存储器触发器的数据锁存电路器件
公开(公告)号：US5889709A
公开(公告)日：1999-03-30
申请号：US25999
申请日：1998-02-19
申请人： Takeshi Fukuda
发明人： Takeshi Fukuda
IPC分类号： G11C11/409 , H03K3/037 , H03K3/3562 , G11C16/04
CPC分类号： H03K3/0375 , H03K3/35625
摘要： A data latch circuit device consists of synchronous dynamic random access memory, in which it causes number of elements and bus line wiring to reduce to be prevented floating state of DFF circuit in stand-by state at the time putting power supply to work. In the data latch circuit device, there is provided transfer gates for switching so as to supply pulse signal PC to clock signal CK instead of clock signal CLK within active period of the reset signal in answer to provision of the reset signal RP.
摘要翻译：数据锁存电路装置由同步动态随机存取存储器构成，其中使得元件数量和总线布线减少，以防止DFF电路的浮置状态在待机状态下工作。在数据锁存电路装置中，设置有用于切换的传送门，以便在复位信号RP的提供时，将复位信号的有效期内的脉冲信号PC提供给时钟信号CK而不是时钟信号CLK。

56. 发明授权

US5483495A Semiconductor memory device having dummy digit lines 失效
标题翻译：具有虚拟数字线的半导体存储器件
公开(公告)号：US5483495A
公开(公告)日：1996-01-09
申请号：US285291
申请日：1994-08-03
申请人： Takeshi Fukuda
发明人： Takeshi Fukuda
IPC分类号： G11C11/401 , G11C7/10 , G11C7/18 , H01L21/8242 , H01L27/108 , G11C7/02
CPC分类号： G11C7/1075 , G11C7/18
摘要： A semiconductor memory device as a video memory is disclosed. The video memory includes a first memory cell array plate having a plurality of first pairs of digit lines and a plurality of second pairs of digit lines, a plurality of first sense amplifiers arranged along one side of the first array plate and provided for the first pairs of digit lines, a plurality of second sense amplifiers arranged along an opposite side of the first array plate and provided for the second pairs of digit lines, a second memory cell array plate having a plurality of third pairs of digit lines, and a plurality of third sense amplifier provided for the third pairs of digit lines. A plurality of pairs of dummy digit lines are further provided in the second memory cell array plate so that the first and second cell array plates has the pairs of digit lines equal in number to each other.
摘要翻译：公开了一种作为视频存储器的半导体存储器件。视频存储器包括具有多个第一对数字线和多个第二对数字线的第一存储单元阵列板，多个第一读出放大器，沿第一阵列板的一侧布置并且为第一对配置数字线的多个第二读出放大器，沿着第一阵列板的相对侧布置并提供用于第二对数字线的多个第二读出放大器，具有多个第三对数字线的第二存储单元阵列板，以及多个第为第三对数字线提供第三感测放大器。在第二存储单元阵列板中进一步设置多对虚拟数字线，使得第一和第二单元阵列板具有彼此数量相等的数字线对。

57. 发明授权

US5337913A Lunch box with utensil pocket 失效
标题翻译：午餐盒用具口袋
公开(公告)号：US5337913A
公开(公告)日：1994-08-16
申请号：US37631
申请日：1993-03-26
申请人： Takeshi Fukuda
发明人： Takeshi Fukuda
IPC分类号： A45C11/20 , E05C19/06 , B65D45/16
CPC分类号： E05C19/06 , A45C11/20
摘要： A lunch box including a tray and a removable lid with a rear, separable hinge assembly and a forward manually releasable latch assembly. The latch assembly includes a front panel on the tray with longitudinally spaced pressure pads and forwardly projecting detents which engage with corresponding detents on the depending front wall of the lid. Simultaneous rearward pressure on the two pressure pads rearwardly release the tray detents from the lid detents and free the lid for removal.
摘要翻译：包括托盘和可拆卸盖子的午餐盒，其具有后部可分离铰链组件和向前可手动拆卸的闩锁组件。闩锁组件包括在托盘上的前面板，其具有纵向间隔开的压力垫和向前突出的棘爪，其与盖的悬挂前壁上的相应棘爪接合。两个压力垫上的同时向后的压力向后释放托盘棘爪从盖子制动器中释放并释放盖子。

58. 发明授权

US5315138A Semiconductor memory apparatus 失效
标题翻译：半导体存储装置
公开(公告)号：US5315138A
公开(公告)日：1994-05-24
申请号：US826419
申请日：1992-01-27
申请人： Takeshi Fukuda
发明人： Takeshi Fukuda
IPC分类号： G11C5/02 , G11C11/4097 , H01L29/92
CPC分类号： G11C5/025 , G11C11/4097 , Y10S257/922
摘要： A semiconductor memory apparatus according to the present invention consists of memory cell forming regions, each formed in a rectangular plane form, a plurality of bit line pairs connected to a plurality of memory cells arranged and formed in these memory cell forming regions, and first and second peripheral circuits formed outside said memory cell forming regions, wherein said first and second peripheral circuits are formed and arranged symmetrically with respect to the point of intersection of two centerlines connecting the middle points of two opposite ones of the four sides of each of said memory cell forming regions, and said bit line pairs are connected to the first and second peripheral circuits. This configuration makes it possible to match the constituent elements of the peripheral circuits with each other and balance the bit line pairs, and thereby to prevent the drop in writing or reading rate and erroneous operations, to which semiconductor memory apparatuses according to the prior art are susceptible.
摘要翻译：根据本发明的半导体存储装置由以矩形平面形式形成的存储单元形成区域，与在这些存储单元形成区域中布置和形成的多个存储单元连接的多个位线对构成，第一和形成在所述存储单元形成区域之外的第二外围电路，其中所述第一和第二外围电路相对于连接每个所述存储器的四个相反侧的两个中间点的两个中心线的交点形成和布置单元形成区域和所述位线对连接到第一和第二外围电路。这种配置使得可以将外围电路的组成元件彼此匹配并平衡位线对，从而防止写入或读取速率下降以及错误操作，根据现有技术的半导体存储器件是易感。

59. 外观设计

USD346936S Food preparation container 失效
公开(公告)号：USD346936S
公开(公告)日：1994-05-17
申请号：US2053
申请日：1992-12-01
申请人： Augusto A. Picozza , Takeshi Fukuda
设计人： Augusto A. Picozza , Takeshi Fukuda

60. 发明授权

US5312690A Self-adhesive silicone rubber composition and silicone rubber coated-fabric material 失效
标题翻译：自粘硅橡胶组合物和硅橡胶涂层织物材料
公开(公告)号：US5312690A
公开(公告)日：1994-05-17
申请号：US944630
申请日：1992-09-14
申请人： Takeshi Fukuda , Shiniti Ide , Motoo Fukushima
发明人： Takeshi Fukuda , Shiniti Ide , Motoo Fukushima
IPC分类号： C08K5/544 , C08L83/04 , B32B9/04 , C08G77/26
CPC分类号： C08K5/544 , C08L83/04 , C08G77/12 , C08G77/20 , Y10T428/31663
摘要： A novel self-adhesive silicone rubber composition is disclosed which gives a cured silicone rubber capable of being firmly bonded to the surface of various kinds of substrate materials even without the pre-treatment of the substrate surface with a primer so that the composition is useful as a coating material in the preparation of a silicone rubber-coated cloth advantageous in respect of the firm adhesion of the cured silicone rubber layer to the substrate cloth. The composition is characterized by the formulation of a unique component which is an organosilane compound having an isocyanato-containing group and a hydrolyzable group in a molecule such as 3-isocyanatopropyl trimethoxy silane.
摘要翻译：公开了一种新型的自粘性硅橡胶组合物，其即使不用基材表面预处理底漆，也能够使固化的硅橡胶牢固地粘合到各种基材的表面上，使得该组合物可用作在制备硅橡胶涂布布时有利于固化的硅橡胶层与基底布的牢固粘合的涂料。该组合物的特征在于制备独特的组分，其是在分子中具有异氰酸酯基的基团和可水解基团如3-异氰酸根合丙基三甲氧基硅烷的有机硅烷化合物。

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