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51. 发明授权

US07732836B2 Compound semiconductor epitaxial substrate and method for manufacturing the same 有权
标题翻译：复合半导体外延基板及其制造方法
公开(公告)号：US07732836B2
公开(公告)日：2010-06-08
申请号：US10540513
申请日：2003-12-19
申请人： Takenori Osada , Tsuyoshi Nakano , Takayuki Inoue
发明人： Takenori Osada , Tsuyoshi Nakano , Takayuki Inoue
IPC分类号： H01L29/778
CPC分类号： H01L29/7785
摘要： In a compound semiconductor epitaxial substrate used for a strain channel high electron mobility field effect transistor which comprises an InGaAs layer as a channel layer 9 and AlGaAs layers containing n-type impurities as electron supplying layers 6 and 12, the channel layer 9 has an electron mobility at room temperature of 8300 cm2/V·s or more by adjusting an In composition of the InGaAs layer composing the channel layer 9 to 0.25 or more and optimizing the In composition and the thickness of the channel layer 9. GaAs layers 8 and 10 having a thickness of 4 nm or more each may be laminated respectively in contact with a top surface and a bottom surface of the channel layer 9.
摘要翻译：在用于包含InGaAs层作为沟道层9的应变通道高电子迁移率场效应晶体管和包含n型杂质作为电子供给层6和12的AlGaAs层的化合物半导体外延基板中，沟道层9具有电子通过将构成沟道层9的InGaAs层的In组成调整至0.25以上，使In的组成和沟道层9的厚度最优化，室温下的迁移率为8300cm2 / V·s以上。GaAs层8,10 各自的厚度为4nm以上的层叠体可分别与沟道层9的上表面和底面接触。

52. 发明申请

US20090218568A1 THIN FILM TRANSISOTR AND DISPLAY DEVICE 有权
标题翻译：薄膜透镜和显示器件
公开(公告)号：US20090218568A1
公开(公告)日：2009-09-03
申请号：US12391398
申请日：2009-02-24
申请人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
发明人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L29/78618 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
摘要翻译：为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

53. 发明授权

US07463988B2 Parameter setting method and circuit operation testing method and electronic processing device 有权
标题翻译：参数设定方法及电路运行试验方法及电子处理装置
公开(公告)号：US07463988B2
公开(公告)日：2008-12-09
申请号：US11644350
申请日：2006-12-21
申请人： Takayuki Inoue , Yoshiyuki Kurokawa
发明人： Takayuki Inoue , Yoshiyuki Kurokawa
IPC分类号： G06F17/50 , G06F17/00
CPC分类号： G06F17/5036
摘要： The invention provides a method for testing a circuit operation (circuit simulation), which is conducted by using a model of high precision. After parameters are extracted by using a model of which physical precision is low and parameter extraction time is short from measurement data, the parameters are converted to those obtained by a model of which parameter extraction time is generally long and a circuit operation test is performed by a model of high physical precision. In other words, a parameter is extracted first by a model of low physical precision and then, the extracted parameter is converted into a parameter obtained by the model of high physical precision. Finally, a circuit operation test is performed by using the model having high physical precision.
摘要翻译：本发明提供了一种通过使用高精度模型进行电路操作（电路仿真）的测试方法。通过使用物理精度低，参数提取时间短的测量数据的模型提取参数后，将参数转换为通过参数提取时间一般较长的模型获得的参数，并进行电路运行测试高度物理精度的模型。换句话说，首先通过低物理精度的模型提取参数，然后将提取的参数转换为由高物理精度的模型获得的参数。最后，通过使用具有高物理精度的模型进行电路操作测试。

54. 发明授权

US07426931B2 Dishwasher 有权
标题翻译：洗碗机
公开(公告)号：US07426931B2
公开(公告)日：2008-09-23
申请号：US10963798
申请日：2004-10-14
申请人： Takashi Miyauchi , Hiroaki Inui , Fumihiko Sasahara , Takayuki Inoue , Makoto Oyama
发明人： Takashi Miyauchi , Hiroaki Inui , Fumihiko Sasahara , Takayuki Inoue , Makoto Oyama
IPC分类号： B08B3/10
CPC分类号： B05B17/0615 , A47L15/0055 , A47L15/44 , A47L2401/09 , A47L2501/07 , A47L2501/36 , A47L2601/17
摘要： A dishwasher includes a washer tub for accommodating therein items to be cleaned, and a mist generating unit for generating a mist of wash water in the washer tub, the mist generating unit including a mist generating vibrator and a vibration transmitting medium. The vibration transmitting medium is provided on the mist generating vibrator so that the mist generating vibrator is isolated from wash water.
摘要翻译：洗碗机包括用于容纳要清洁的物品的洗涤桶和用于在洗涤桶中产生洗涤水雾的雾产生单元，所述雾生成单元包括雾产生振动器和振动传递介质。振动传递介质设置在雾产生振动器上，使得雾产生振动器与洗涤水隔离。

55. 发明申请

US20080119462A1 METHOD FOR TREATING VASCULAR HYPERPERMEABLE DISEASE 审中-公开
标题翻译：治疗血管性高血压疾病的方法
公开(公告)号：US20080119462A1
公开(公告)日：2008-05-22
申请号：US11930466
申请日：2007-10-31
申请人： Ryuji UENO , Akira Nagashima , Takayuki Inoue , Mitsuru Ohkubo , Kousei Yoshihara
发明人： Ryuji UENO , Akira Nagashima , Takayuki Inoue , Mitsuru Ohkubo , Kousei Yoshihara
IPC分类号： A61K31/541 , A61K31/426 , A61K31/5377 , A61P27/16 , A61K31/497
CPC分类号： A61K31/4162 , A61K31/426
摘要： The present invention provides a method for treating a vascular hyperpermeable disease (except macular edema), which method comprises administering to a patient in need thereof a vascular adhesion protein-1 (VAP-1) inhibitor in an amount sufficient to treat said patient for said disease.
摘要翻译：本发明提供了一种治疗血管高渗透性疾病（黄斑水肿除外）的方法，该方法包括向有需要的患者施用足以治疗所述患者的血管粘附蛋白-1（VAP-1）抑制剂，用于治疗所述疾病。

56. 发明申请

US20070273522A1 Semiconductor device and position detection system using semiconductor device 有权
标题翻译：半导体器件和使用半导体器件的位置检测系统
公开(公告)号：US20070273522A1
公开(公告)日：2007-11-29
申请号：US11802246
申请日：2007-05-21
申请人： Hiroki Dembo , Yoshiyuki Kurokawa , Takayuki Inoue
发明人： Hiroki Dembo , Yoshiyuki Kurokawa , Takayuki Inoue
IPC分类号： G08B13/14 , G08B21/00 , G08B5/22 , G01S13/08
CPC分类号： H01Q9/27 , G01S13/878 , G06K2017/0045 , H01L27/12 , H01L27/1214 , H01L27/1255 , H01L27/1266 , H01L27/13 , H01Q1/40 , H01Q7/00
摘要： A position detection system is formed by network connection of a plurality of interrogators and a server. An RFID and the interrogators communicate wirelessly, whereby a distance from each interrogator to the RFID is searched to search a position of the RFID from the distance. In order to calculate the distance from the interrogator to the RFID, a signal is oscillated with a frequency corresponding to amplitude of a signal received in the RFID from the interrogator. A frequency of a signal oscillated in the RFID is detected in the RFID or by the interrogator, whereby a distance from the interrogator to the RFID is detected.
摘要翻译：通过多个询问器和服务器的网络连接形成位置检测系统。 RFID和询问器以无线方式进行通信，从而搜索从每个询问器到RFID的距离，以从远处搜索RFID的位置。为了计算从询问器到RFID的距离，信号以对应于来自询问器的RFID中接收的信号的幅度的频率振荡。在RFID中或由询问器检测到在RFID中振荡的信号的频率，从而检测到从询问器到RFID的距离。

57. 发明授权

US07291873B2 High electron mobility epitaxial substrate 有权
标题翻译：高电子迁移率外延衬底
公开(公告)号：US07291873B2
公开(公告)日：2007-11-06
申请号：US10540514
申请日：2003-12-19
申请人： Takenori Osada , Takayuki Inoue , Noboru Fukuhara
发明人： Takenori Osada , Takayuki Inoue , Noboru Fukuhara
IPC分类号： H01L31/00
CPC分类号： H01L29/7785
摘要： A compound semiconductor epitaxial substrate for use in a strain channel high electron mobility field effect transistor, comprising an InGaAs layer as a strain channel layer 6 and AlGaAs layers containing n-type impurities as back side and front side electron supplying layers 3 and 9, wherein an emission peak wavelength from the strain channel layer 6 at 77 K is set to 1030 nm or more by optimizing the In composition and the thickness of the strain channel layer 6.
摘要翻译：一种用于应变通道高电子迁移率场效应晶体管的化合物半导体外延基板，包括作为应变通道层6的InGaAs层和含有n型杂质的AlGaAs层作为背面侧和前侧电子供给层3和9，其中通过优化应变通道层6的In组成和厚度，将77K处的应变通道层6的发射峰值波长设定为1030nm以上。

58. 发明申请

US20070150250A1 Parameter setting method and circuit operation testing method and electronic processing device 有权
标题翻译：参数设定方法及电路运行试验方法及电子处理装置
公开(公告)号：US20070150250A1
公开(公告)日：2007-06-28
申请号：US11644350
申请日：2006-12-21
申请人： Takayuki Inoue , Yoshiyuki Kurokawa
发明人： Takayuki Inoue , Yoshiyuki Kurokawa
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： The invention provides a method for testing a circuit operation (circuit simulation), which is conducted by using a model of high precision. After parameters are extracted by using a model of which physical precision is low and parameter extraction time is short from measurement data, the parameters are converted to those obtained by a model of which parameter extraction time is generally long and a circuit operation test is performed by a model of high physical precision. In other words, a parameter is extracted first by a model of low physical precision and then, the extracted parameter is converted into a parameter obtained by the model of high physical precision. Finally, a circuit operation test is performed by using the model having high physical precision.
摘要翻译：本发明提供了一种通过使用高精度模型进行电路操作（电路仿真）的测试方法。通过使用物理精度低，参数提取时间短的测量数据的模型提取参数后，将参数转换为通过参数提取时间一般较长的模型获得的参数，并进行电路运行测试高度物理精度的模型。换句话说，首先通过低物理精度的模型提取参数，然后将提取的参数转换为由高物理精度的模型获得的参数。最后，通过使用具有高物理精度的模型进行电路操作测试。

59. 发明申请

US20060276521A1 Thiazole derivatives 失效
公开(公告)号：US20060276521A1
公开(公告)日：2006-12-07
申请号：US11505321
申请日：2006-08-17
申请人： Takayuki Inoue , Takashi Tojo , Masataka Morita , Mitsuru Ohkubo , Kousei Yoshihara , Akira Nagashima
发明人： Takayuki Inoue , Takashi Tojo , Masataka Morita , Mitsuru Ohkubo , Kousei Yoshihara , Akira Nagashima
IPC分类号： A61K31/427 , A61K31/426 , C07D417/02
CPC分类号： C07D417/06 , C07D277/46 , C07D277/48 , C07D277/56 , C07D417/12
摘要： A compound of the formula (I): R1—NH—X—Y-Z (I) wherein each symbol is as defined in the specification, or a pharmaceutically acceptable salt thereof useful as a vascular adhesion protein-1 (VAP-1) inhibitor, a pharmaceutical composition, a method for preventing or treating a VAP-1 associated disease, especially macular edema, which method includes administering an effective amount of the compound or a pharmaceutically acceptable salt thereof to a mammal, and the like.

60. 发明申请

US20060128770A1 Thiazole derivatives 审中-公开
标题翻译：噻唑衍生物
公开(公告)号：US20060128770A1
公开(公告)日：2006-06-15
申请号：US11345492
申请日：2006-02-02
申请人： Takayuki Inoue , Takashi Tojo , Masataka Morita , Mitsuru Ohkubo , Kousei Yoshihara , Akira Nagashima
发明人： Takayuki Inoue , Takashi Tojo , Masataka Morita , Mitsuru Ohkubo , Kousei Yoshihara , Akira Nagashima
IPC分类号： A61K31/427 , A61K31/426 , C07D417/02
CPC分类号： C07D417/06 , C07D277/46 , C07D277/48 , C07D277/56 , C07D417/12
摘要： A compound of the formula (I): R1—NH—X—Y-Z (I) wherein each symbol is as defined in the specification, or a pharmaceutically acceptable salt thereof useful as a vascular adhesion protein-1 (VAP-1) inhibitor, a pharmaceutical composition, a method for preventing or treating a VAP-1 associated disease, especially macular edema, which method includes administering an effective amount of the compound or a pharmaceutically acceptable salt thereof to a mammal, and the like.
摘要翻译：式（I）化合物：其中各符号如说明书中所定义，或其药学上可接受的盐可用作血管粘附蛋白-1（1R） VAP-1）抑制剂，药物组合物，预防或治疗VAP-1相关疾病，尤其是黄斑水肿的方法，该方法包括将有效量的化合物或其药学上可接受的盐给予哺乳动物等。

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