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51. 发明申请

US20100270992A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20100270992A1
公开(公告)日：2010-10-28
申请号：US12767156
申请日：2010-04-26
申请人： Tetsuya KAWASHIMA , Takayuki HASHIMOTO
发明人： Tetsuya KAWASHIMA , Takayuki HASHIMOTO
IPC分类号： G05F1/10 , H01L23/538 , H01L23/52
CPC分类号： H01L23/4952 , H01L23/49524 , H01L23/49541 , H01L23/49562 , H01L23/49575 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/32245 , H01L2224/40245 , H01L2224/45014 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/49111 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H02M7/003 , H01L2924/00 , H01L2924/00012 , H01L2224/05599 , H01L2224/37099 , H01L2924/206
摘要： A semiconductor device having two semiconductor chips sealed in a sealant (2-in-1 package) is provided. A power MOSFET chip for control is disposed on an input-side plate lead portion, wherein a source electrode and a gate electrode are formed on a main surface of the chip and the source electrode is connected to an output plate lead portion. A power MOSFET chip for synchronization is disposed on an output-side plate lead portion, wherein a source electrode and a gate electrode are formed on a main surface of the chip, and the second source electrode is connected to a ground-side plate lead portion. The ground-side plate lead portion and gate-side lead portions connected to the gate electrodes, respectively, are provided between the input-side plate lead portion and the output-side plate lead portion. In this manner, heat-dissipation paths via wirings when the 2-in-1 package is mounted on a board can be wide.
摘要翻译：提供了具有密封在密封剂（2合1封装）中的两个半导体芯片的半导体器件。用于控制的功率MOSFET芯片设置在输入侧板引线部分上，其中源电极和栅电极形成在芯片的主表面上，源电极连接到输出板引线部分。用于同步的功率MOSFET芯片设置在输出侧板引线部分上，其中源电极和栅电极形成在芯片的主表面上，第二源电极连接到接地侧引线部分。分别连接到栅电极的接地侧引线部分和栅极侧引线部分设置在输入侧板引线部分和输出侧板引线部分之间。以这种方式，当将2合1封装安装在电路板上时通过布线的散热路径可以是宽的。

52. 发明申请

US20100001790A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20100001790A1
公开(公告)日：2010-01-07
申请号：US12483668
申请日：2009-06-12
申请人： Takayuki HASHIMOTO , Takashi Hirao , Noboru Akiyama
发明人： Takayuki HASHIMOTO , Takashi Hirao , Noboru Akiyama
IPC分类号： H01L25/00
CPC分类号： H01L27/0629 , H01L2924/0002 , H02M7/003 , H01L2924/00
摘要： In a semiconductor device, a high-side driver is arranged in a region closer to a periphery of a semiconductor substrate than a high-side switch, and a low-side driver is arranged in a region closer to the periphery of the semiconductor substrate than the low-side switch. By this means, a path from a positive terminal of an input capacitor to a negative terminal of the input capacitor via the high-side switch and the low-side switch is short, a path from a positive terminal of a drive capacitor to a negative terminal of the drive capacitor via the low-side driver is short, and a path from a positive terminal of a boot strap capacitor to a negative terminal of the boot strap capacitor via the high-side driver is short, and therefore, the parasitic inductance can be reduced, and the conversion efficiency can be improved.
摘要翻译：在半导体装置中，高侧驱动器配置在比高侧开关更靠近半导体基板的周围的区域，低边驱动器配置在比半导体基板的周边更靠近的区域，低端开关。通过这种方式，经由高侧开关和低侧开关从输入电容器的正极端子到输入电容器的负极端子的路径很短，从驱动电容器的正极端子到负极的路径通过低侧驱动器的驱动电容器的端子短，通过高侧驱动器从引导电容器的正极端子到引导电容器的负极端子的路径短，因此，寄生电感可以降低转换效率。

53. 发明申请

US20090140327A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090140327A1
公开(公告)日：2009-06-04
申请号：US12326392
申请日：2008-12-02
申请人： Takashi Hirao , Takayuki Hashimoto , Noboru Akiyama
发明人： Takashi Hirao , Takayuki Hashimoto , Noboru Akiyama
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41741 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： The vertical trench MOSFET comprises: an N type epitaxial region formed on an upper surface of an N+ type substrate having a drain electrode on a lower surface thereof; a gate trench extending from a front surface into the N type epitaxial region; a gate electrode positioned in the gate trench so as to interpose an insulator; a channel region formed on the N type epitaxial region; a source region formed on the channel region; a source electrode formed on the source region; a source trench extending from the front surface into the N type epitaxial region; and a trench-buried source electrode positioned in the source trench so as to interpose an insulator, wherein the source electrode contacts with the trench-buried source electrode.
摘要翻译：垂直沟槽MOSFET包括：形成在其下表面上具有漏电极的N +型衬底的上表面上的N型外延区域; 栅极沟槽，其从前表面延伸到N型外延区域; 位于所述栅极沟槽中以便插入绝缘体的栅电极; 形成在N型外延区上的沟道区; 形成在沟道区上的源极区; 形成在源极区上的源电极; 源极沟槽，其从前表面延伸到N型外延区域; 以及位于所述源极沟槽中以便插入绝缘体的沟槽埋入式源电极，其中所述源电极与所述沟槽埋入式源极接触。

54. 发明申请

US20090033377A1 Drive Circuit and Inverter for Voltage Driving Type Semiconductor Device 有权
标题翻译：用于电压驱动型半导体器件的驱动电路和逆变器
公开(公告)号：US20090033377A1
公开(公告)日：2009-02-05
申请号：US12170472
申请日：2008-07-10
申请人： Takayuki Hashimoto , Takashi Hirao , Masaki Shiraishi
发明人： Takayuki Hashimoto , Takashi Hirao , Masaki Shiraishi
IPC分类号： H03K3/012
CPC分类号： H02M3/07 , H02M1/08 , H02M7/5387 , H02M2003/071
摘要： A drive circuit for driving a semiconductor element is equipped with: a first switch connected to a positive side of a DC power supply; a second switch connected to the other terminal of the first switch and to a negative side of the DC power supply; a third switch connected to the positive side of the DC power supply; a fourth switch connected to the other terminal of the third switch; a fifth switch connected to the other terminal of the fourth switch and to the negative side of the DC power supply; and a capacitor connected to the other terminal of the first switch and to the other terminal of the fourth switch. A gate of the semiconductor element is connected to the other terminal of said third switch; and a source of the semiconductor element is connected to the negative side of the DC power supply.
摘要翻译：用于驱动半导体元件的驱动电路配备有：连接到直流电源的正侧的第一开关; 连接到第一开关的另一个端子和直流电源的负极的第二开关; 连接到直流电源的正极的第三开关; 连接到第三开关的另一个端子的第四开关; 连接到第四开关的另一个端子和直流电源的负极的第五开关; 以及电容器，连接到第一开关的另一端子和第四开关的另一端子。半导体元件的栅极连接到所述第三开关的另一个端子; 并且半导体元件的源极连接到直流电源的负极侧。

55. 发明授权

US06327457B1 Opening-closing device with limited lifting range 有权
标题翻译：开启装置，起升范围有限
公开(公告)号：US06327457B1
公开(公告)日：2001-12-04
申请号：US09549144
申请日：2000-04-13
申请人： Takayuki Hashimoto
发明人： Takayuki Hashimoto
IPC分类号： G03G1500
CPC分类号： G03G15/605 , E05Y2201/638
摘要： An opening-closing device is capable of automatically positioning an opened pressing mechanism horizontally in relation to a supporting table. A base member is provided for fixation to a body of an apparatus on which the pressing mechanism is to be used. A supporting member is secured pivotably to the base member and a lifting member is provided to which a rear portion of the pressing mechanism is fixed to a free end of the supporting member with a supporting pin reversibly in a direction in which the lifting member will overlap the supporting member. An elastic member forces the supporting member along with the lifting member in the opening direction of the pressing mechanism while forcing the lifting member in a direction in which the lifting member will overlap the supporting member. The opening-closing device further has a mechanism for limiting to a predetermined range, the range of the lifting member being reversible about the pivoted position relative to the supporting member and an adjusting mechanism abutting a part of the base member or the apparatus body to reverse the lifting member.
摘要翻译：开闭装置能够相对于支撑台水平地自动定位打开的按压机构。提供基座构件用于固定到其上将使用按压机构的装置的主体。支撑构件可枢转地固定到基部构件，并且提供提升构件，按压机构的后部通过支撑销以可提升构件将重叠的方向可逆地固定到支撑构件的自由端，支撑构件。弹性构件沿着按压机构的打开方向将提升构件沿着提升构件推压，同时迫使提升构件沿着提升构件将与支撑构件重叠的方向。开闭装置还具有用于限制在预定范围的机构，提升构件的范围围绕枢转位置相对于支撑构件是可逆的;以及调节机构，邻接基座构件或装置主体的一部分以反向提升构件。

56. 发明授权

US5635733A Semiconductor light emitting element with a current diffusing layer having a changing carrier concentration therein 失效
标题翻译：具有其中载流子浓度变化的电流扩散层的半导体发光元件
公开(公告)号：US5635733A
公开(公告)日：1997-06-03
申请号：US601279
申请日：1996-02-16
申请人： Hiroaki Okagawa , Takayuki Hashimoto , Keiji Miyashita , Tomoo Yamada , Kazuyuki Tadatomo
发明人： Hiroaki Okagawa , Takayuki Hashimoto , Keiji Miyashita , Tomoo Yamada , Kazuyuki Tadatomo
IPC分类号： H01L33/14 , H01L33/30 , H01L33/40 , H01L33/00
CPC分类号： H01L33/14
摘要： In the light emitting element comprising an n-type semiconductor substrate, a lower electrode formed on the lower surface of the substrate, and a light emitting part having a pn junction, which is composed of an InGaAlP compound semiconductor material, a p-type current diffusing layer and an upper electrode which are laminated on the upper surface of the substrate in that order from the substrate side, the improvement wherein a carrier concentration of the current diffusing layer is lower on a light emitting part side thereof than that on an upper electrode side thereof, and at least the upper electrode side of the current diffusing layer is composed of GaP. By employing such structure, diffusion of the dopant to a light emitting part can be suppressed even when the carrier concentration of the upper part of the current diffusing layer is set to be higher, thereby affording a lower resistance of the current diffusing layer as a whole. The GaP being a compound semiconductor without Al, the amount of the dopant necessary for affording the superior effects of suppressing the diffusion of the dopant to the light emitting part can be less. Consequently, the luminous efficiency can be improved as compared with conventional ones, and a light emitting element having a long service life and superior reliability can be obtained.
摘要翻译：在包含n型半导体衬底的发光元件中，形成在衬底的下表面上的下电极和由InGaAlP化合物半导体材料构成的具有pn结的发光部分，p型电流扩散层和上电极，从衬底侧依次层叠在衬底的上表面上，其中电流扩散层的发光部分侧的载流子浓度比上电极的载流子浓度低并且电流扩散层的至少上电极侧由GaP构成。通过采用这样的结构，即使将电流扩散层的上部的载流子浓度设定得较高，也能够抑制掺杂剂向发光部的扩散，从而提供整体上的电流扩散层的较低的电阻。 GaP是没有Al的化合物半导体，可以减少为了提供抑制掺杂剂向发光部的扩散的优异效果所需的掺杂剂的量。因此，与现有技术相比，能够提高发光效率，能够得到使用寿命长，可靠性优异的发光元件。

57. 发明授权

US5631475A Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US5631475A
公开(公告)日：1997-05-20
申请号：US498752
申请日：1995-07-06
申请人： Shinichi Watabe , Hiroaki Okagawa , Takayuki Hashimoto , Kazuyuki Tadatomo
发明人： Shinichi Watabe , Hiroaki Okagawa , Takayuki Hashimoto , Kazuyuki Tadatomo
IPC分类号： H01L29/205 , H01L21/20 , H01L21/205 , H01L33/12 , H01L33/30 , H01L33/40 , H01L33/00
CPC分类号： H01L33/40 , H01L33/30
摘要： A semiconductor light emitting element comprising a light emitting part comprising an AlGaInP active layer and a AlGaInP cladding layer, which is formed on a GaAs substrate, and an AlGaAs layer and a Ga.sub.x In.sub.1-x P layer (0.7.ltoreq.x.ltoreq.1.0) deposited in this order on said light emitting part, wherein said Ga.sub.x In.sub.1-x P layer has a thickness of not more than 1.0 .mu.m. According to the present invention, absorption of the emitted light by an electrode contact layer and the occurrence of an interfacial distortion between the electrode contact layer and the layer thereunder can be suppressed, and a semiconductor light emitting element permitting easy production thereof and having a high luminance and a long service life can be provided.
摘要翻译：一种半导体发光元件，包括形成在GaAs衬底上的AlGaInP有源层和AlGaInP包层的发光部分，以及AlGaAs层和GaxIn1-xP层（0.7≤x≤1.0）以上述顺序沉积在所述发光部分上，其中所述GaxIn1-xP层的厚度不大于1.0μm。根据本发明，可以抑制由电极接触层吸收发射的光，并且可以抑制电极接触层与其下面的层之间的界面变形的发生，并且可以容易地制造并具有高的半导体发光元件可以提供亮度和长的使用寿命。

58. 发明授权

US5562943A Salt compositions 失效
标题翻译：盐组成
公开(公告)号：US5562943A
公开(公告)日：1996-10-08
申请号：US288952
申请日：1994-08-11
申请人： Hen-Sik Koh , Yoshikazu Kawashima , Takayuki Hashimoto
发明人： Hen-Sik Koh , Yoshikazu Kawashima , Takayuki Hashimoto
IPC分类号： A23L1/304 , A23L1/202 , A23L1/237 , A23L1/238
CPC分类号： A23L27/50 , A23L27/40
摘要： A salt composition is provided for preventing excess intake of salt (sodium chloride) and achieving a well balanced intake of minerals. The composition which is used in the place of conventional table salt consists essentially of 100 parts by weight of a mixture containing 30 to 75% by weight of sodium chloride and 25 to 70% by weight of sylvinite admixed with 5 to 60 parts by weight of a citrate. Seasonings, such as soybean paste and soy sauce, and foods, such as pickles and kimchi, can be prepared with such a salt composition.
摘要翻译：提供了一种盐组合物，用于防止过量摄入盐（氯化钠）并实现均匀的矿物摄入。用于代替常规餐桌盐的组合物基本上由100重量份的含有30-75重量％氯化钠和25-70重量％的硅镁石的混合物与5-60重量份的柠檬酸盐可以用这样的盐组合物制备诸如大豆酱和酱油的调味料，以及腌菜和泡菜等食品。

59. 发明授权

US09595602B2 Switching device for power conversion and power conversion device 有权
标题翻译：电源转换和电源转换装置的开关装置
公开(公告)号：US09595602B2
公开(公告)日：2017-03-14
申请号：US14418610
申请日：2012-09-07
申请人： Takayuki Hashimoto , Mutsuhiro Mori , Masahiro Masunaga
发明人： Takayuki Hashimoto , Mutsuhiro Mori , Masahiro Masunaga
IPC分类号： H01L29/78 , H01L29/739 , H01L29/423 , H02M7/537 , H01L29/06 , H02M1/08 , H02M7/5387
CPC分类号： H02M1/088 , H01L29/0619 , H01L29/0696 , H01L29/0804 , H01L29/0821 , H01L29/1079 , H01L29/41708 , H01L29/4236 , H01L29/4238 , H01L29/7394 , H01L29/7396 , H01L29/7397 , H02M1/08 , H02M7/003 , H02M7/537 , H02M7/5387 , H02M2001/0054
摘要： The present invention provides a switching device (100) for power conversion in which a first gate electrode (6), a p-type channel layer (2) having an n-type emitter region (3), a second gate electrode (13), and a p-type floating layer (15) are repeatedly arranged in order on the surface side of an n-type semiconductor substrate (1). An interval a between the two gates (6, 13) that sandwich the p-type channel layer (2) is configured to be smaller than an interval b between the two gates (13, 6) that sandwich the p-type floating layer (15). The first gate electrode (6) and the second gate electrode (13) are both supplied with drive signals having a time difference in drive timing.
摘要翻译：本发明提供一种用于功率转换的开关装置（100），其中具有n型发射极区（3）的第一栅电极（6），p型沟道层（2），第二栅电极（13），并且在n型半导体衬底（1）的表面侧依次重复布置p型浮动层（15）。夹着p型沟道层（2）的两个栅极（6,13）之间的间隔a被配置为小于夹着p型浮动层的两个栅极（13,6）之间的间隔b 15）。第一栅电极（6）和第二栅电极（13）都被提供有驱动定时具有时差的驱动信号。

60. 发明授权

US08125206B2 Semiconductor device and power supply using the same 有权
标题翻译：半导体器件和电源使用相同
公开(公告)号：US08125206B2
公开(公告)日：2012-02-28
申请号：US12143305
申请日：2008-06-20
申请人： Noboru Akiyama , Takayuki Hashimoto , Takashi Hirao , Koji Tateno
发明人： Noboru Akiyama , Takayuki Hashimoto , Takashi Hirao , Koji Tateno
IPC分类号： G05F1/40
CPC分类号： H02M3/1588 , Y02B70/1466
摘要： A power-supply control IC is included in a switching power supply which drives to turn on and off a semiconductor switching device connected to a DC power supply in series to supply a predetermined constant voltage to an external load, and is a semiconductor device including a semiconductor circuit which controls on and off of the semiconductor switching device. When a current flowing through the load is abruptly increased to cause an error voltage to exceed a predetermined first threshold voltage after the end of a PWM on-pulse generated in synchronization with a switching cycle, a second PWM on-pulse is generated within the same switching cycle. Furthermore, in a plurality of switching cycles after the switching cycle in which the second PWM on-pulse is generated, the first threshold voltage for comparison with the error voltage is switched to a second threshold voltage higher than the first threshold voltage.
摘要翻译：电源控制IC包括在开关电源中，该开关电源驱动以串联连接到直流电源的半导体开关装置，以向外部负载提供预定的恒定电压，并且是包括控制半导体开关器件的导通和截止的半导体电路。当流过负载的电流突然增加以在与开关周期同步产生的PWM导通脉冲结束之后导致误差电压超过预定的第一阈值电压时，在同一时间内产生第二PWM导通脉冲开关周期。此外，在产生第二PWM导通脉冲的开关周期之后的多个开关周期中，与误差电压进行比较的第一阈值电压被切换到高于第一阈值电压的第二阈值电压。

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