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51. 发明授权

US07485507B2 Organic thin-film transistor, method of fabricating the same, and flat panel display having the same 有权
标题翻译：有机薄膜晶体管，其制造方法以及具有该有机薄膜晶体管的平板显示器
公开(公告)号：US07485507B2
公开(公告)日：2009-02-03
申请号：US11150179
申请日：2005-06-13
申请人： Taek Ahn , Jae-Bon Koo , Min-Chul Suh
发明人： Taek Ahn , Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L51/0541 , H01L27/3244
摘要： The present invention relates to an organic thin film transistor (OTFT), a method of fabricating the OTFT, and an organic electroluminescent display that has the OTFTs. The invention prevents surface damage of an organic semiconductor layer and reduces an off-current. The OTFT includes a substrate, a source electrode and a drain electrode formed on the substrate, and a semiconductor layer formed on the substrate that has a channel layer disposed over and between the source electrode and drain electrode. In addition, the OTFT includes a gate insulating layer formed on the semiconductor layer, a separation pattern formed through the semiconductor layer and the gate insulating layer to separate the channel layer, and a gate electrode formed on the gate insulating layer over the channel layer.
摘要翻译：本发明涉及有机薄膜晶体管（OTFT），制造OTFT的方法以及具有OTFT的有机电致发光显示器。本发明可防止有机半导体层的表面损伤并减少断流。 OTFT包括形成在基板上的基板，源电极和漏电极，以及形成在基板上的半导体层，该半导体层具有设置在源电极和漏电极之间和之间的沟道层。此外，OTFT包括形成在半导体层上的栅极绝缘层，通过半导体层形成的分离图案和用于分离沟道层的栅极绝缘层，以及在沟道层上形成在栅极绝缘层上的栅电极。

52. 发明申请

US20070099356A1 Flat panel display device and method of manufacturing the same 审中-公开
标题翻译：平板显示装置及其制造方法
公开(公告)号：US20070099356A1
公开(公告)日：2007-05-03
申请号：US11588362
申请日：2006-10-27
申请人： Jin-Seong Park , Taek Ahn , Min-Chul Suh
发明人： Jin-Seong Park , Taek Ahn , Min-Chul Suh
IPC分类号： H01L21/84 , H01L21/00 , G02F1/1335
CPC分类号： H01L51/5237 , H01L51/5253 , H01L2251/5315
摘要： A flat panel display device of which a display unit is efficiently sealed and which has good flexibility, and a method of manufacturing the flat panel display. The flat panel display device includes a substrate, a display unit formed on the substrate, and a sealing part formed so as to cover the display unit using an atomic layer deposition (ALD) method.
摘要翻译：显示单元被有效地密封并且具有良好的柔性的平板显示装置以及制造平板显示器的方法。平板显示装置包括基板，形成在基板上的显示单元和形成为使用原子层沉积（ALD）方法覆盖显示单元的密封部。

53. 发明申请

US20070090349A1 Organic thin film transistor, flat panel display apparatus comprising the same, and method of manufacturing the organic thin film transistor 失效
标题翻译：有机薄膜晶体管，包括该有机薄膜晶体管的平板显示装置以及制造该有机薄膜晶体管的方法
公开(公告)号：US20070090349A1
公开(公告)日：2007-04-26
申请号：US11546342
申请日：2006-10-12
申请人： Min-Chul Suh , Taek Ahn , Jin-Seong Park
发明人： Min-Chul Suh , Taek Ahn , Jin-Seong Park
IPC分类号： H01L29/08 , H01L29/76 , H01L21/00 , H01L35/24 , H01L29/10 , H01L51/00 , H01L31/036 , H01L31/112
CPC分类号： H01L51/0545 , B82Y10/00 , B82Y30/00 , H01L27/3274 , H01L51/0012 , H01L51/0541 , H01L51/105
摘要： An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.
摘要翻译：一种能够降低源极和漏极之间的接触电阻以及有机半导体层并且可以容易地制造的有机薄膜晶体管，利用有机薄膜晶体管的平板显示装置和制造有机薄膜晶体管的方法。有机薄膜晶体管包括：基板; 设置在栅极绝缘膜上的源电极和漏电极; 导电聚合物层，设置成覆盖源电极和漏电极中的每一个的至少一部分; 设置在基板上的疏水性材料层以及除了形成导电性聚合物层的区域之外的源极和漏极电极; 电连接到源极和漏极的有机半导体层; 设置为覆盖有机半导体层的栅极绝缘膜; 以及设置在栅极绝缘膜上的栅电极。

54. 发明申请

US20070040169A1 Organic thin film transistor and manufacturing method thereof 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20070040169A1
公开(公告)日：2007-02-22
申请号：US11505912
申请日：2006-08-18
申请人： Sung Kim , Taek Ahn , Min-Chul Suh , Sin-Doo Lee
发明人： Sung Kim , Taek Ahn , Min-Chul Suh , Sin-Doo Lee
IPC分类号： H01L29/08
CPC分类号： H01L51/0004 , H01L21/268 , H01L51/0545
摘要： An organic thin film transistor includes a substrate, a gate electrode, a gate insulating layer, a first electrode, and a second electrode disposed on the substrate, a first layer disposed on the substrate, the first layer being photosensitive, a second layer disposed on the first layer, the second layer being hydrophobic, an opening defined in the first and second layers, the opening corresponding to the gate electrode, and a hydrophilic organic semiconductor disposed in the opening.
摘要翻译：有机薄膜晶体管包括基板，栅电极，栅极绝缘层，第一电极和设置在基板上的第二电极，设置在基板上的第一层，第一层是感光的，第二层设置在第一层，第二层是疏水性的，限定在第一层和第二层中的开口，对应于栅电极的开口和设置在开口中的亲水性有机半导体。

55. 发明申请

US20060145146A1 Method of forming conductive pattern, thin film transistor, and method of manufacturing the same 有权
公开(公告)号：US20060145146A1
公开(公告)日：2006-07-06
申请号：US11296874
申请日：2005-12-08
申请人： Min-Chul Suh , Jae-Bon Koo , Taek Ahn , Hye-Dong Kim , Fischer Joerg , Werner Humbs
发明人： Min-Chul Suh , Jae-Bon Koo , Taek Ahn , Hye-Dong Kim , Fischer Joerg , Werner Humbs
IPC分类号： H01L29/08 , B05D5/06
CPC分类号： H01L51/0022 , B82Y10/00 , B82Y30/00 , H01L21/31691 , H01L51/0005 , H01L51/0021 , H01L51/0023 , H01L51/0097 , H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/102 , Y02E10/549 , Y02P70/521
摘要： A method of forming a conductive pattern in which the conductive pattern can be easily formed at a low temperature without a photolithography process by forming the conductive pattern using a laser ablation method and an inkjet method, an organic thin film transistor manufactured using the method, and a method of manufacturing the organic thin film transistor. The method of forming a conductive pattern in a flat panel display device includes preparing a base member, forming a groove having the same shape as the conductive pattern in the base member, and forming the conductive pattern by applying a conductive material into the groove. The base member has one of a structure including a plastic substrate having the groove and a structure including a substrate and an insulating layer which is arranged on the substrate and which has the groove.

56. 发明申请

US20060118789A1 Thin film transistor, method of manufacturing the same, and flat panel display using the thin film transistor 审中-公开
标题翻译：薄膜晶体管，其制造方法和使用薄膜晶体管的平板显示器
公开(公告)号：US20060118789A1
公开(公告)日：2006-06-08
申请号：US11291928
申请日：2005-12-02
申请人： Min-Chul Suh , Jae-Bon Koo , Yeon-Gon Mo , Taek Ahn , Jong-Han Jeong
发明人： Min-Chul Suh , Jae-Bon Koo , Yeon-Gon Mo , Taek Ahn , Jong-Han Jeong
IPC分类号： H01L29/04
CPC分类号： H01L51/0541 , H01L51/0021 , H01L51/0036 , H01L51/0097 , H01L51/0516
摘要： A thin film transistor, a method of manufacturing the same, and a flat panel display including the thin film transistor. The thin film transistor includes a gate electrode, a source electrode and a drain electrode, a first conductive layer connected to the gate electrode, a second conductive layer connected to one of the source and drain electrodes, an organic semiconductor layer that contacts the source and drain electrodes and an insulating layer insulating the source and drain electrodes and the organic semiconductor layer from the gate electrode, wherein at least one of the gate electrode, the first conductive layer, the source and drain electrodes, and the second conductive layer includes conductive nano-particles and a cured resin. Conductive layers of the thin film transistor can have precise patterns. The thin film transistor can be manufactured by low-cost, low-temperature processes.
摘要翻译：薄膜晶体管，其制造方法和包括薄膜晶体管的平板显示器。薄膜晶体管包括栅电极，源电极和漏电极，连接到栅电极的第一导电层，连接到源极和漏极之一的第二导电层，接触源极的有机半导体层和漏电极和绝缘层，其将源极和漏极以及有机半导体层与栅电极绝缘，其中栅电极，第一导电层，源极和漏极以及第二导电层中的至少一个包括导电纳米颗粒和固化树脂。薄膜晶体管的导电层可以具有精确的图案。薄膜晶体管可以通过低成本，低温工艺制造。

57. 发明申请

US20060108581A1 Organic thin film transistor, method of manufacturing the same, and flat panel display device with the organic thin film transistor 有权
标题翻译：有机薄膜晶体管，其制造方法以及具有有机薄膜晶体管的平板显示装置
公开(公告)号：US20060108581A1
公开(公告)日：2006-05-25
申请号：US11282633
申请日：2005-11-21
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
IPC分类号： H01L29/08
CPC分类号： B82Y30/00 , H01L51/0036 , H01L51/0037 , H01L51/0052 , H01L51/0078 , H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.
摘要翻译：具有良好的粘合性和良好的接触电阻以及有机半导体层与源电极和漏电极之间的欧姆接触的有机薄膜晶体管及其制造方法。还提供了使用有机薄膜晶体管的平板显示装置。有机薄膜晶体管包括在基板上形成的源电极，漏电极，有机半导体层，栅极绝缘层和栅电极，以及载体中继层，其至少形成在有机半导体层和源电极或有机半导体层和漏电极。

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