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    • 51. 发明授权
    • Method and apparatus for etching silicon nitride film and manufacturing method of semiconductor device
    • 用于蚀刻氮化硅膜的方法和装置及半导体器件的制造方法
    • US06686294B2
    • 2004-02-03
    • US09816403
    • 2001-03-26
    • Kenji Kawai
    • Kenji Kawai
    • H01L21302
    • H01L21/31116H01L21/31612H01L21/3185
    • An etching method used to selectively etch a silicon nitride film is achieved that enables the selective ratio of the silicon nitride film relative to a silicon oxide film to be sufficiently high. The etching method uses a reactive ion etching apparatus including a process chamber holding herein a substrate to be etched, gas supply means for supplying a reactant gas into the process chamber, and an upper electrode and a lower electrode provided within the process chamber and applied with high-frequency currents. The etching is performed under the conditions that the reactant gas includes halogen-based gas, the pressure of the reactant gas in the chamber is 12.0 Pa-66.7 Pa, the flow rate of the reactant gas supplied into the chamber is 0.1 liter/min-0.55 liter/min, and the distance between the upper and lower electrodes is 50 mm-120 mm.
    • 实现了用于选择性地蚀刻氮化硅膜的蚀刻方法,其使氮化硅膜相对于氧化硅膜的选择比足够高。 蚀刻方法使用反应离子蚀刻装置,其包括在此保持要蚀刻的基板的处理室,用于将反应气体供给到处理室中的气体供给装置,以及设置在处理室内的上部电极和下部电极, 高频电流。 在反应气体包括卤素系气体,室内的反应气体的压力为12.0Pa〜66.7Pa的条件下进行蚀刻,供给到室内的反应气体的流量为0.1升/ 0.55升/分钟,上下电极之间的距离为50mm〜120mm。
    • 53. 发明授权
    • Image signal processing apparatus and image pickup device
    • 图像信号处理装置和图像拾取装置
    • US6141047A
    • 2000-10-31
    • US744272
    • 1996-11-06
    • Kenji KawaiKoji Takahashi
    • Kenji KawaiKoji Takahashi
    • H04N5/202H04N5/235H04N5/238H04N5/243H04N9/73
    • H04N5/202H04N5/235H04N5/2352H04N5/238H04N5/243
    • Fine operation processing such as nonlinear processing is performed in units of frames in correspondence with each photographing frame. In order to effectively utilize the dynamic range of a digital processing circuit, there is provided an image processing apparatus which includes a varying circuit for varying the signal level in correspondence with the photographing contents, an A/D converter for converting an output varied by the varying circuit into a digital signal, an image memory for storing image information output from the A/D converter, an evaluation circuit for evaluating the image information, an operation circuit for performing operation processing of a signal output from the image memory, and a control circuit for controlling the varying circuit and the operation circuit on the basis of the evaluation result of the evaluation circuit. There is also provided an image pickup device in which the varying circuit includes an iris control circuit, a shutter speed control circuit, or a gain control circuit, and varies the signal level using the circuit.
    • 以与各拍摄帧对应的帧为单位进行非线性处理等精细的动作处理。 为了有效地利用数字处理电路的动态范围,提供了一种图像处理装置,其包括用于根据拍摄内容改变信号电平的变化电路,用于转换由 变换电路转换为数字信号;图像存储器,用于存储从A / D转换器输出的图像信息;评估电路,用于评估图像信息;操作电路,用于执行从图像存储器输出的信号的操作处理;以及控制 电路,用于根据评估电路的评估结果控制变化电路和运行电路。 还提供了一种图像拾取装置,其中变化电路包括光圈控制电路,快门速度控制电路或增益控制电路,并且使用电路改变信号电平。
    • 56. 发明授权
    • Semantic orbject modeling system for creating relational database schemas
    • 用于创建关系数据库模式的语义对象建模系统
    • US5548749A
    • 1996-08-20
    • US145997
    • 1993-10-29
    • David M. KroenkeChristopher C. OldsKenji KawaiLee I. Eggebroten
    • David M. KroenkeChristopher C. OldsKenji KawaiLee I. Eggebroten
    • G06F12/00G06F20060101G06F17/30G06F19/00G06F15/40
    • G06F17/30595G06F17/30607Y10S707/99943
    • A computer-based system for allowing a user to create a relational database schema. The system allows a user to create a semantic object data model of the database schema. The semantic object data model is defined by one or more semantic objects, each of which includes one or more attributes that describe a characteristic of the semantic objects. The attributes are defined as being either simple value attributes that describe a single characteristic of the semantic object; group attributes that include one or more member attributes that collectively describe a characteristic of the semantic object; formula attributes that set forth a computation that describes a characteristic of a semantic object; or object link attributes that define a relationship between two or more semantic objects. Once the semantic object data model is created, the system validates the semantic objects to ensure no modeling errors have been made and transforms the semantic objects and their included attributes into a plurality of relational database tables that will store data as defined by the semantic object data model.
    • 一种基于计算机的系统,用于允许用户创建关系数据库模式。 该系统允许用户创建数据库模式的语义对象数据模型。 语义对象数据模型由一个或多个语义对象定义,每个语义对象包括描述语义对象的特征的一个或多个属性。 属性被定义为描述语义对象的单一特征的简单值属性; 组属性,其包括共同描述语义对象的特征的一个或多个成员属性; 公式属性,用于描述描述语义对象特征的计算; 或定义两个或多个语义对象之间关系的对象链接属性。 一旦语义对象数据模型被创建,系统验证语义对象,以确保没有建模错误,并将语义对象及其包含的属性转换成多个关系数据库表,其将存储由语义对象数据定义的数据 模型。
    • 58. 发明授权
    • Semiconductor wafer treating apparatus utilizing a plasma
    • 利用等离子体的半导体晶片处理装置
    • US4877509A
    • 1989-10-31
    • US269688
    • 1988-11-10
    • Toshiaki OgawaNobuo FujiwaraKenji KawaiTeruo ShibanoHiroshi MoritaKyusaku Nishioka
    • Toshiaki OgawaNobuo FujiwaraKenji KawaiTeruo ShibanoHiroshi MoritaKyusaku Nishioka
    • H01L21/302C23C16/511H01J37/32H01L21/205H01L21/3065H01L21/31
    • H01J37/32293C23C16/511H01J37/32192H01J37/32678
    • An apparatus for treating semiconductor wafers utilizing a plasma generated by electron cyclotron resonance (ECR) is disclosed in which a microwave is supplied to a plasma generating chamber via a rectangular waveguide, a rectangular-to-circular microwave converter, and a circular polarization converter. The polarization converter may comprise a phase shift plate of a dielectric material or an electrically conductive material disposed in a circular waveguide in the form of a metallic cylinder. The polarization converter transforms a circular TE.sub.11 mode microwave supplied from the rectangular-to-circular microwave converter to a circularly polarized one by rotating the direction of the electric field of the microwave in the TE.sub.11 mode one complete turn in one period of the microwave. Thus, the electric field strength of the microwave supplied to the plasma generating chamber is averaged over the time along the circumferential direction in the plasma generating chamber to make the density of plasma generation therein spatially uniform. The spatially uniformly distributed plasma generated in the plasma generating chamber is conveyed to the wafer in the wafer treating chamber to effect a treatment of the wafer.
    • 公开了一种利用电子回旋共振(ECR)产生的等离子体处理半导体晶片的装置,其中通过矩形波导,矩形到圆形微波转换器和圆偏振转换器将微波提供给等离子体发生室。 偏振转换器可以包括介电材料的相移板或设置在金属圆筒形状的圆形波导中的导电材料。 在微波的一个周期内,通过在TE11模式一周内旋转微波的电场方向,将由矩形到圆形的微波转换器提供的循环TE11模式的微波变换成圆偏振的微波。 因此,供给到等离子体发生室的微波的电场强度在等离子体发生室中沿着圆周方向的时间平均化,使得其中等离子体产生的密度在空间上均匀。 在等离子体发生室中产生的空间均匀分布的等离子体被输送到晶片处理室中的晶片,以对晶片进行处理。
    • 59. 发明授权
    • Process for producing synthetic coking coal of high volatile matter
content
    • 高挥发物含量的合成焦煤的生产工艺
    • US4257778A
    • 1981-03-24
    • US70469
    • 1979-08-28
    • Tadashi MurakamiMamoru YamaneToshio TokairinKenji Kawai
    • Tadashi MurakamiMamoru YamaneToshio TokairinKenji Kawai
    • C10B57/04C10B39/04C10B55/00C10C3/14C10C3/18C10G9/00C10G9/14C10M7/00
    • C10B55/00C10B39/04
    • A process for producing a synthetic coking coal of high volatile matter content by thermal cracking of a heavy hydrocarbon through the delayed coking process comprising heating said heavy hydrocarbon in a furnace to a temperature between about 380.degree. C. and 500.degree. C. and sufficient to initiate cracking; introducing said heated heavy hydrocarbon into a coking drum where it is maintained at a temperature and for a time sufficient to effect cracking to thereby produce a thermally cracked residue having a volatile matter content of from about 25 to 45 wt % and a Gieseler fluidity of at least about 50,000 ddpm; withdrawing said thermally cracked residue from the coking drum at a temperature selected so as to satisfy the relation:T.ltoreq.0.293x.sup.2 -26.12x+790where T is the temperature (.degree.C.) of the thermally cracked residue; x is the volatile matter content of the residue (wt %) and is in the range of from about 25 to 45 wt %, and bringing said residue into contact with water for cooling and solidification; and the synthetic coking coal product.
    • 一种通过延迟焦化工艺通过重质烃的热裂解生产高挥发物含量的合成焦煤的方法,包括将炉中的重质烃加热至约380℃至500℃之间的温度, 引发开裂; 将所述加热的重质烃引入焦化鼓中,在其中将其保持在足以实现裂化的温度和时间,从而产生挥发性物质含量为约25至45重量%的热裂解残余物,并且将Gieseler流动性为 至少约50,000点 在选择的温度下从焦化鼓中取出所述热裂化残渣,以满足以下关系:T <= 0.293×26.12×+ 790其中T是热裂化残余物的温度(℃); x是残渣的挥发物含量(重量%),在约25〜45重量%的范围内,使所述残渣与水接触以进行冷却和固化; 和合成焦煤产品。