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    • 56. 发明授权
    • Multiple irradiation effect-corrected dose determination technique for charged particle beam lithography
    • 用于带电粒子束光刻的多重照射效应校正剂量测定技术
    • US07525110B2
    • 2009-04-28
    • US11671789
    • 2007-02-06
    • Junichi SuzukiKeiko EmiTakayuki Abe
    • Junichi SuzukiKeiko EmiTakayuki Abe
    • A61N5/00
    • H01J37/3174B82Y10/00B82Y40/00
    • A charged-particle beam microlithographic apparatus is generally made up of a pattern writing unit and a system controller. The writer has an electron beam source and a pattern generator for forming a pattern image on a workpiece. The system controller includes a unit for correcting proximity and fogging effects occurrable during pattern writing. This unit has a first calculator for calculating a proximity effect-corrected dose, a functional module for calculation of a fog-corrected dose while including therein the influence of the proximity effect, and a multiplier for combining the calculated doses together to determine a total corrected dose. The module has a second calculator for calculating a variable real value representing the proximity-effect influence to be considered during fog correction, and a third calculator for calculating using this value the fog-corrected dose.
    • 带电粒子束微光刻设备通常由图案写入单元和系统控制器组成。 作者具有电子束源和用于在工件上形成图案图像的图案发生器。 系统控制器包括用于在模式写入期间发生的用于校正接近度和起雾效果的单元。 该单元具有用于计算接近效应校正剂量的第一计算器,用于计算雾化校正剂量的功能模块,同时在其中包括邻近效应的影响,以及用于将计算的剂量组合在一起以确定总校正的乘数 剂量。 该模块具有第二计算器,用于计算表示在雾化校正期间考虑的邻近效应影响的可变实数值;以及第三计算器,用于使用该值计算雾化校正剂量。
    • 57. 发明授权
    • Colorant for thermoplastic resin and uses thereof
    • 用于热塑性树脂的着色剂及其用途
    • US07473468B2
    • 2009-01-06
    • US10577060
    • 2004-09-13
    • Seiji SawadaKenichi KobayashiJunichi SuzukiMasashi Koide
    • Seiji SawadaKenichi KobayashiJunichi SuzukiMasashi Koide
    • B32B19/04B32B9/04
    • B82Y30/00C01P2004/54C01P2004/64C09C1/24Y10T428/2991Y10T428/2998
    • It is an object of the present invention to provide a thermoplastic resin coloring agent having excellent dispersibility, transparency, ultraviolet blocking properties, etc., and a thermoplastic resin composition employing same, and it is another object of the present invention to provide a thermoplastic resin molding having excellent dispersibility, transparency, ultraviolet blocking properties, stretchability, and surface smoothness.The present invention relates to a thermoplastic resin coloring agent containing a surface-treated α-ferric oxide (A) formed by coating a non-acicular α-ferric oxide having an average particle size of 0.01 to 0.06 μm and an aspect ratio of 0.2 to 1.0 with a polyhydric alcohol and an organopolysiloxane, and an oxycarboxylic acid metal salt (B1) as a dispersing agent (B) and, moreover, to the thermoplastic resin coloring agent further containing a methine-based dye (C). The present invention also relates to a thermoplastic resin composition and a molding obtained using the thermoplastic resin coloring agent. Furthermore, the present invention relates to a molding obtained by coating the molding with a carbon film.
    • 本发明的目的是提供具有优异的分散性,透明性,紫外线阻隔性等的热塑性树脂着色剂和使用该热塑性树脂的热塑性树脂组合物,本发明的另一个目的是提供一种热塑性树脂 具有优异的分散性,透明性,紫外线阻隔性,拉伸性和表面光滑性的成型品。 本发明涉及含有表面处理的α-氧化铁(A)的热塑性树脂着色剂,其通过将平均粒径为0.01〜0.06μm,宽高比为0.2的非针状α-氧化铁 1.0与多元醇和有机聚硅氧烷,和作为分散剂(B)的羟基羧酸金属盐(B1),另外还含有次甲基染料(C)的热塑性树脂着色剂。 本发明还涉及一种热塑性树脂组合物和使用该热塑性树脂着色剂获得的模制品。 此外,本发明涉及通过用碳膜涂覆成型体而得到的成型体。
    • 58. 发明授权
    • Nonvolatile semiconductor memory and driving method the same
    • 非易失性半导体存储器和驱动方法相同
    • US07355895B2
    • 2008-04-08
    • US11090273
    • 2005-03-28
    • Junichi Suzuki
    • Junichi Suzuki
    • G11C16/04
    • G11C16/10
    • A nonvolatile semiconductor memory includes a memory cell array, a control circuit and an address control circuit. In the memory cell array, a plurality of memory cells are arranged in a matrix of rows and columns. The control circuit sets a write/erase mode in response to an erase instruction, and to count the erase instruction. The address control circuit generates a write address from an input address for a write operation based on a count value from the control circuit in the write/erase mode. A write order to the memory cells accessed based on a series of the write addresses in a current write operation is different from a write order to the memory cells accessed based on a series of write addresses in a previous write operation.
    • 非易失性半导体存储器包括存储单元阵列,控制电路和地址控制电路。 在存储单元阵列中,多个存储单元以行和列的矩阵排列。 控制电路响应于擦除指令设置写/擦除模式,并对擦除指令进行计数。 地址控制电路根据来自控制电路的写入/擦除模式的计数值,从写入操作的输入地址生成写入地址。 基于当前写入操作中的一系列写入地址访问的存储器单元的写入顺序与基于先前写入操作中的一系列写入地址访问的存储器单元的写入顺序不同。