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51. 发明申请

US20090092033A1 ELECTRIC FIELD SENSOR HAVING VERTICAL STRUCTURE, FABRICATION METHOD THEREOF, AND STORAGE UNIT USING THE SAME 有权
标题翻译：具有垂直结构的电场传感器，其制造方法和使用该方法的存储单元
公开(公告)号：US20090092033A1
公开(公告)日：2009-04-09
申请号：US12138055
申请日：2008-06-12
申请人： Simon BUEHLMANN , Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong
发明人： Simon BUEHLMANN , Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong
IPC分类号： G01R27/14 , G11B9/02 , H01L21/20
CPC分类号： G11B9/02 , B82Y10/00 , G11B9/1409
摘要： An electric field sensor includes a substrate having a low resistive semiconductor layer doped with a high-density dopant as the top layer of the substrate, a high resistive semiconductor layer doped with a low-density dopant, the high resistive semiconductor layer located at a partial area on the low resistive semiconductor layer, and a conductive layer located on the high resistive semiconductor layer, wherein a change of an electric field is detected by a change of a current flowing through the low resistive semiconductor layer, the high resistive semiconductor layer, and the conductive layer.
摘要翻译：电场传感器包括具有掺杂有作为衬底的顶层的高密度掺杂剂的低电阻半导体层的衬底，掺杂有低密度掺杂剂的高电阻半导体层，位于部分低电阻半导体层上的区域和位于高电阻半导体层上的导电层，其中通过流过低电阻半导体层，高电阻半导体层和电阻半导体层的电流的变化来检测电场的变化，导电层。

52. 发明申请

US20080225678A1 FERROELECTRIC RECORDING MEDIUM AND WRITING METHOD FOR THE SAME 失效
标题翻译：电磁记录介质及其相关的书写方法
公开(公告)号：US20080225678A1
公开(公告)日：2008-09-18
申请号：US12128788
申请日：2008-05-29
申请人： Hyoung-soo KO , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
发明人： Hyoung-soo KO , Eun-sik Kim , Sung-dong Kim , Ju-hwan Jung , Hong-sik Park , Chul-min Park , Seung-bum Hong
IPC分类号： G11B7/00
CPC分类号： G11B9/02 , G11C11/5657 , Y10S977/947
摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
摘要翻译：提供铁电记录介质及其写入方法。铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。在铁电层上形成非挥发性各向异性导电层。当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。因此，可以在铁电记录介质的一个域上表示多个位。

53. 发明授权

US07419843B2 Method of manufacturing semiconductor probe having resistive tip 失效
标题翻译：制造具有电阻尖端的半导体探针的方法
公开(公告)号：US07419843B2
公开(公告)日：2008-09-02
申请号：US11212605
申请日：2005-08-29
申请人： Chul-min Park , Hong-sik Park , Hyoung-soo Ko , Seung-bum Hong
发明人： Chul-min Park , Hong-sik Park , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： H01L21/00
CPC分类号： G01Q70/10 , G01Q70/16
摘要： A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.
摘要翻译：一种制造具有电阻尖端的半导体探针的方法。该方法包括在硅衬底上形成具有矩形形状的第一和第二掩模膜，首先蚀刻硅衬底的上表面，通过蚀刻第一掩模膜形成与尖端颈部的宽度相对应的第三掩模膜，形成通过使用第三掩模膜作为掩模对硅衬底进行第二次蚀刻，使尖端颈部的宽度达到预定宽度，并且在除去第三掩模膜之后通过退火硅衬底来形成尖端的峰形成部分。可以制造具有均匀高度的半导体探针和具有均匀颈部宽度的尖端。

54. 发明申请

US20080116926A1 SEMICONDUCTOR PROBE HAVING RESISTIVE TIP AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有电阻提示的半导体探针及其制造方法
公开(公告)号：US20080116926A1
公开(公告)日：2008-05-22
申请号：US11861417
申请日：2007-09-26
申请人： Hyoung-soo KO , Ju-hwan Jung , Seung-bum Hong , Chul-min Park
发明人： Hyoung-soo KO , Ju-hwan Jung , Seung-bum Hong , Chul-min Park
IPC分类号： G01R31/02 , H01C17/00
CPC分类号： G01Q60/30 , G01Q80/00 , H01C13/00 , Y10T29/49082
摘要： Provided are a semiconductor probe having a resistive tip and a method of fabricating the semiconductor probe. The semiconductor probe includes a resistive tip which is doped with a first impurity, and of which an apex portion is doped with a low concentration of a second impurity of opposite polarity to the first impurity, wherein first and second semiconductor electrode regions doped with a high concentration of the second impurity is formed on slopes of the resistive tip; a dielectric layer formed on the resistive tip; an electric field shield which is formed on the dielectric layer, and forms a plane together with the dielectric layer on the apex portion of the resistive tip; and a cantilever having an end on which the resistive tip is located.
摘要翻译：提供了具有电阻尖端的半导体探针和制造半导体探针的方法。半导体探针包括掺杂有第一杂质的电阻尖端，并且其顶点部分掺杂有与第一杂质相反极性的低浓度第二杂质，其中掺杂高的第一和第二半导体电极区第二杂质的浓度形成在电阻尖端的斜面上; 形成在电阻尖端上的电介质层; 形成在电介质层上的电场屏蔽层，与电阻顶端的顶点上的电介质层一起形成平面; 以及具有电阻尖端所在的端部的悬臂。

55. 发明申请

US20080049589A1 High density data storage device and data recording or reproduction method using the same 失效
标题翻译：高密度数据存储设备和使用其的数据记录或再现方法
公开(公告)号：US20080049589A1
公开(公告)日：2008-02-28
申请号：US11710430
申请日：2007-02-26
申请人： Seung Bum Hong , Ju Hwan Jung , Hyoung Soo Ko
发明人： Seung Bum Hong , Ju Hwan Jung , Hyoung Soo Ko
IPC分类号： G11B9/04
CPC分类号： G11B9/04 , B82Y10/00 , G11B9/1409 , G11B9/149
摘要： A high density data storage device and a data recording or reproduction method using the same, which can record or reproduce high density data without contact, thereby preventing data errors due to contact are provided. The high density data storage device uses a recording medium and a probe. The recording medium is a thin film made from phase change material or oxide resistance change material, and the probe has a tip formed in a lower portion thereof, which moves with a spacing from the top of the recording medium. Further, recording or reproduction of data is performed through electric field or heat emission, which is generated in the tip of the probe, without direct contact between the recording medium and the probe, so that it is possible to remove instability caused by contact between the recording medium and the probe and to stably record or reproduce data in or from the recording medium without errors.
摘要翻译：提供一种高密度数据存储装置和使用该高密度数据存储装置的数据记录或再现方法，其可以不接触地记录或再现高密度数据，从而防止由于接触而引起的数据错误。高密度数据存储装置使用记录介质和探针。记录介质是由相变材料或氧化物电阻改变材料制成的薄膜，并且探针具有形成在其下部的尖端，其与记录介质的顶部间隔地移动。此外，通过在探针的尖端中产生的电场或发热进行数据的记录或再现，而不会在记录介质和探针之间直接接触，从而可以消除由于接触引起的不稳定性记录介质和探头，并且在没有错误的情况下稳定地在记录介质中记录或再现数据。

56. 发明申请

US20070042522A1 Method of fabricating resistive probe having self-aligned metal shield 有权
标题翻译：制造具有自对准金属屏蔽的电阻式探头的方法
公开(公告)号：US20070042522A1
公开(公告)日：2007-02-22
申请号：US11498095
申请日：2006-08-03
申请人： Hong-sik Park , Ju-hwan Jung , Hyoung-soo Ko , Seung-bum Hong
发明人： Hong-sik Park , Ju-hwan Jung , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： H01L21/00
CPC分类号： G11B9/1418 , G01Q70/10 , G01Q70/14 , G01Q70/16 , G01Q80/00
摘要： A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.
摘要翻译：一种制造具有自对准金属屏蔽的电阻式探头的方法。该方法包括在衬底的电阻端上顺序地形成第一绝缘层，金属屏蔽和第二绝缘层; 蚀刻第二绝缘层以在电阻区域上暴露金属屏蔽; 蚀刻暴露的金属屏蔽; 并蚀刻第一绝缘层以暴露电阻区域。

57. 发明申请

US20070040116A1 Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same 有权
标题翻译：具有低纵横比的电阻尖端的半导体探针及其制造方法
公开(公告)号：US20070040116A1
公开(公告)日：2007-02-22
申请号：US11448723
申请日：2006-06-08
申请人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
发明人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
IPC分类号： G12B21/02
CPC分类号： G01Q70/16 , G01Q70/10 , G01Q70/14 , G01Q80/00 , G11B9/02 , G11B9/1409 , Y10S977/861
摘要： A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.
摘要翻译：提供具有低纵横比的电阻尖端和制造半导体探针的方法的半导体探针。半导体探针包括电阻尖端和悬臂，其具有阻挡尖端所在的端部。掺杂有第一杂质的电阻尖端包括形成在电阻尖端的峰处的电阻区，并且轻掺杂有与第一杂质极性相反的第二杂质，以及形成在电阻尖端的倾斜表面上的第一和第二半导体电极区并重掺杂第二杂质。电阻尖端的高度小于电阻尖端的半径。因此，提高了半导体探针的空间分辨率。

58. 发明申请

US20060157440A1 Semiconductor probe with resistive tip and method of fabricating the same 有权
标题翻译：具有电阻尖端的半导体探针及其制造方法
公开(公告)号：US20060157440A1
公开(公告)日：2006-07-20
申请号：US11322340
申请日：2006-01-03
申请人： Ju-hwan Jung , Hyung-cheol Shin , Hyoung-soo Ko , Seung-bum Hong
发明人： Ju-hwan Jung , Hyung-cheol Shin , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： C23F1/00 , B44C1/22 , G01N23/00
CPC分类号： G01Q70/16 , G01Q70/14 , G01Q80/00 , G11B9/1409
摘要： A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.
摘要翻译：具有电阻尖端的半导体探针和制造半导体探针的方法。掺杂有第一杂质的电阻尖端包括在其峰上形成的电阻区，并且轻掺杂具有与第一杂质极性相反的第二杂质，以及形成在其倾斜侧上并且重掺杂有第二杂质的第一和第二半导体区。半导体探针包括电阻尖端，悬臂具有设置有电阻尖端的端部，设置在悬臂上并覆盖电阻区域的电介质层，以及设置在电介质层上的金属屏蔽层，位置对应于电阻区域。

59. 发明申请

US20060145806A1 Magnetic logic device and methods of manufacturing and operating the same 有权
公开(公告)号：US20060145806A1
公开(公告)日：2006-07-06
申请号：US11320898
申请日：2005-12-30
申请人： Sung-dong Kim , Eun-sik Kim , Ju-hwan Jung , Hyoung-soo Ko , Dong-ki Min , Hong-sik Park , Seung-bum Hong
发明人： Sung-dong Kim , Eun-sik Kim , Ju-hwan Jung , Hyoung-soo Ko , Dong-ki Min , Hong-sik Park , Seung-bum Hong
IPC分类号： H01F5/00
CPC分类号： H03K19/16 , H01L43/08
摘要： A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.

60. 发明申请

US20060060779A1 Semiconductor probe with resistive tip and method of fabricating the same 失效
标题翻译：具有电阻尖端的半导体探针及其制造方法
公开(公告)号：US20060060779A1
公开(公告)日：2006-03-23
申请号：US11219732
申请日：2005-09-07
申请人： Hong-sik Park , Kyoung-lock Baeck , Ju-hwan Jung , Hyoung-soo Ko , Chul-min Park , Seung-bum Hong
发明人： Hong-sik Park , Kyoung-lock Baeck , Ju-hwan Jung , Hyoung-soo Ko , Chul-min Park , Seung-bum Hong
IPC分类号： G21K7/00
CPC分类号： G11B9/1409 , G01Q60/30 , Y10S977/875 , Y10S977/878 , Y10S977/879
摘要： A semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist layer orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist layer on the substrate to cover a portion of the first photoresist layer and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresist layers; and removing the first and second photoresist layers, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.
摘要翻译：具有电阻尖端的半导体探针及其制造方法。该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂层，并且蚀刻所述掩模层使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂层以覆盖所述第一光致抗蚀剂层的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂层覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂层，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

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