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    • 59. 发明申请
    • METHOD OF FORMING A WIRE STRUCTURE
    • 形成线结构的方法
    • US20090035930A1
    • 2009-02-05
    • US12146729
    • 2008-06-26
    • Ho-Jun YiYong-ll KimBong-Soo KimDae-Young JangWoo-Jeong Cho
    • Ho-Jun YiYong-ll KimBong-Soo KimDae-Young JangWoo-Jeong Cho
    • H01L21/768
    • H01L27/105H01L23/535H01L2924/0002H01L2924/00
    • In a method of forming a wire structure, first active regions and second active regions are formed on a substrate. Each of the first active regions has a first sidewall of a positive slope and a second sidewall opposed to the first sidewall. The second active regions are arranged along a first direction. An isolation layer is between the first active regions and the second active regions. A first mask is formed on the first active regions, the second active regions and the isolation layer. The first mask has an opening exposing the first sidewall and extending along the first direction. The first active regions, the second active regions and the isolation layer are etched using the first mask to form a groove extending along the first direction and to form a fence having a height substantially higher than a bottom face of the groove. A wire is formed to fill the groove. A contact is formed on the wire. The contact is disposed toward the second active regions from the fence.
    • 在形成线结构的方法中,在衬底上形成第一有源区和第二有源区。 每个第一有源区具有正斜率的第一侧壁和与第一侧壁相对的第二侧壁。 第二有源区沿第一方向排列。 隔离层位于第一有源区和第二有源区之间。 第一掩模形成在第一有源区,第二有源区和隔离层上。 第一掩模具有暴露第一侧壁并沿着第一方向延伸的开口。 使用第一掩模蚀刻第一有源区,第二有源区和隔离层,以形成沿着第一方向延伸的凹槽,并形成具有高于凹槽的底面的高度的栅栏。 形成线以填充凹槽。 在导线上形成接触。 接触件从栅栏朝向第二活动区域设置。