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51. 发明授权

US07537993B2 Methods of forming semiconductor devices having tunnel and gate insulating layers 失效
标题翻译：形成具有隧道和栅极绝缘层的半导体器件的方法
公开(公告)号：US07537993B2
公开(公告)日：2009-05-26
申请号：US11776297
申请日：2007-07-11
申请人： Chul-sung Kim , Young-jin Noh , Bon-young Koo , Sung-kweon Baek
发明人： Chul-sung Kim , Young-jin Noh , Bon-young Koo , Sung-kweon Baek
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L27/115
摘要： A semiconductor device includes a semiconductor substrate having a surface, buried isolation regions protruding from the surface of the semiconductor substrate, and a first insulating layer on the surface of the semiconductor substrate between the isolation regions and including a fluorine, nitrogen, and/or heavy hydrogen impurity. A floating electrode is on the first insulating layer, a second insulating layer is on the floating electrode and the isolation regions, and a control gate electrode is on the second insulating layer. Related methods of forming semiconductor devices are also disclosed.
摘要翻译：半导体器件包括具有表面的半导体衬底，从半导体衬底的表面突出的掩埋隔离区域和在隔离区域之间的半导体衬底的表面上的第一绝缘层，并且包括氟，氮和/或重的氢杂质。浮置电极位于第一绝缘层上，第二绝缘层位于浮置电极和隔离区上，而控制栅极位于第二绝缘层上。还公开了形成半导体器件的相关方法。

52. 发明申请

US20090130834A1 METHODS OF FORMING IMPURITY CONTAINING INSULATING FILMS AND FLASH MEMORY DEVICES INCLUDING THE SAME 失效
标题翻译：形成包含绝缘膜的绝缘体的方法和包括其的闪存存储器件
公开(公告)号：US20090130834A1
公开(公告)日：2009-05-21
申请号：US12188482
申请日：2008-08-08
申请人： Young-Jin Noh , Bon-Young Koo , Si-Young Choi , Ki-Hyun Hwang , Chul-Sung Kim , Sung-Kweon Baek , Jin-Hwa Heo
发明人： Young-Jin Noh , Bon-Young Koo , Si-Young Choi , Ki-Hyun Hwang , Chul-Sung Kim , Sung-Kweon Baek , Jin-Hwa Heo
IPC分类号： H01L21/4763 , H01L21/469
CPC分类号： H01L29/42324 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/28273 , H01L21/3145 , H01L21/31662
摘要： Methods of forming an insulating film include forming an insulating film on a substrate. A first impurity is injected into the insulating film using a thermal process under a first set of processing conditions to form a first impurity concentration peak in a lower portion of the insulating film. A second impurity is injected into the insulating film using the thermal process under a second set of processing conditions, different from the first set of processing conditions, to form a second impurity concentration peak in an upper portion of the insulating film. Injecting the first impurity and injecting the second impurity may be carried out without using plasma and the first impurity concentration peak may be higher than the second impurity concentration peak.
摘要翻译：形成绝缘膜的方法包括在基板上形成绝缘膜。使用第一组处理条件下的热处理将第一杂质注入绝缘膜，以在绝缘膜的下部形成第一杂质浓度峰。在与第一组处理条件不同的第二组处理条件下，使用热处理将第二杂质注入到绝缘膜中，以在绝缘膜的上部形成第二杂质浓度峰。注入第一杂质并注入第二杂质可以在不使用等离子体的情况下进行，并且第一杂质浓度峰可以高于第二杂质浓度峰。

53. 发明授权

US07419918B2 Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devices 有权
标题翻译：形成薄膜结构的方法，制造使用其的非易失性半导体器件的制造方法以及所得的非易失性半导体器件
公开(公告)号：US07419918B2
公开(公告)日：2008-09-02
申请号：US11399670
申请日：2006-04-06
申请人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Ji-Hyun Kim , Young-Jin Noh
发明人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Ji-Hyun Kim , Young-Jin Noh
IPC分类号： H01L21/31
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11568
摘要： In a method of forming a thin-film structure employed in a non-volatile semiconductor device, an oxide film is formed on a substrate. An upper nitride film is formed on the oxide film by nitrifying an upper portion of the oxide film through a plasma nitration process. A lower nitride film is formed between the substrate and the oxide film by nitrifying a lower portion of the oxide film through a thermal nitration process. A damage to the thin-film structure generated in the plasma nitration process may be at least partially cured in the thermal nitration process, and/or may be cured in a post-thermal treatment process.
摘要翻译：在非易失性半导体器件中使用的薄膜结构的形成方法中，在基板上形成氧化膜。通过等离子体硝化工艺对氧化膜的上部进行硝化，在氧化物膜上形成上部氮化物膜。通过热硝化处理使氧化膜的下部硝化，在基板和氧化膜之间形成下部氮化膜。在等离子体硝化过程中产生的薄膜结构的损坏可以在热硝化过程中至少部分地固化，和/或可以在后热处理过程中固化。

54. 发明申请

US20080164508A1 Memory devices and methods of manufacturing the same 失效
标题翻译：存储器件及其制造方法
公开(公告)号：US20080164508A1
公开(公告)日：2008-07-10
申请号：US11655689
申请日：2007-01-19
申请人： In-Sang Jeon , Sang-Bom Kang , Dong-Chan Kim , Chul-Sung Kim , Sug-Hun Hong , Sang-Jin Hyun
发明人： In-Sang Jeon , Sang-Bom Kang , Dong-Chan Kim , Chul-Sung Kim , Sug-Hun Hong , Sang-Jin Hyun
IPC分类号： H01L29/788
CPC分类号： H01L21/28282 , H01L29/513 , H01L29/792 , Y10S257/908
摘要： The memory device includes a first tunnel insulation layer pattern on a semiconductor substrate, a second tunnel insulation layer pattern having an energy band gap lower than that of the first tunnel insulation layer pattern on the first tunnel insulation layer pattern, a charge trapping layer pattern on the second tunnel insulation layer pattern, a blocking layer pattern on the charge trapping layer pattern, and a gate electrode on the blocking layer pattern. The memory device further includes a source/drain region at an upper portion of the semiconductor substrate, The upper portion of the semiconductor substrate is adjacent to the first tunnel insulation layer pattern.
摘要翻译：存储器件包括在半导体衬底上的第一隧道绝缘层图案，第二隧道绝缘层图案，其第一隧道绝缘层图案上具有比第一隧道绝缘层图案低的能带隙，第二隧道绝缘层图案，电荷俘获层图案上的阻挡层图案，以及阻挡层图案上的栅电极。存储器件还包括在半导体衬底的上部的源极/漏极区域。半导体衬底的上部与第一隧道绝缘层图案相邻。

55. 发明申请

US20070023821A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070023821A1
公开(公告)日：2007-02-01
申请号：US11494439
申请日：2006-07-27
申请人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Sung-Kweon Baek , Young-Jin Noh
发明人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Sung-Kweon Baek , Young-Jin Noh
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L29/42336
摘要： In a semiconductor device and a method of manufacturing the semiconductor device, preliminary isolation regions having protruded upper portions are formed on a substrate to define an active region. After an insulation layer is formed on the active region, a first conductive layer is formed on the insulation layer. The protruded upper portions of the preliminary isolation regions are removed to form isolation regions on the substrate and to expose sidewalls of the first conductive layer, and compensation members are formed on edge portions of the insulation layer. The compensation members may complement the edge portions of the insulation layer that have thicknesses substantially thinner than that of a center portion of the insulation layer, and may prevent deterioration of the insulation layer. Furthermore, the first conductive layer having a width substantially greater than that of the active region may enhance a coupling ratio of the semiconductor device. Thus, the semiconductor device may have improved electrical characteristics and reliability.
摘要翻译：在半导体器件和半导体器件的制造方法中，在衬底上形成具有突出的上部的预备隔离区以限定有源区。在有源区上形成绝缘层之后，在绝缘层上形成第一导电层。去除预分离区域的突出的上部，以在衬底上形成隔离区域并暴露第一导电层的侧壁，并且补偿构件形成在绝缘层的边缘部分上。补偿构件可以补充绝缘层的边缘部分，该边缘部分的厚度基本上比绝缘层的中心部分的厚度更薄，并且可以防止绝缘层的劣化。此外，具有基本上大于有源区的宽度的第一导电层可以增强半导体器件的耦合比。因此，半导体器件可以具有改善的电特性和可靠性。

56. 发明申请

US20060228841A1 Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devices 有权
标题翻译：形成薄膜结构的方法，制造使用其的非易失性半导体器件的制造方法以及所得的非易失性半导体器件
公开(公告)号：US20060228841A1
公开(公告)日：2006-10-12
申请号：US11399670
申请日：2006-04-06
申请人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Ji-Hyun Kim , Young-Jin Noh
发明人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Ji-Hyun Kim , Young-Jin Noh
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11568
摘要： In a method of forming a thin-film structure employed in a non-volatile semiconductor device, an oxide film is formed on a substrate. An upper nitride film is formed on the oxide film by nitrifying an upper portion of the oxide film through a plasma nitration process. A lower nitride film is formed between the substrate and the oxide film by nitrifying a lower portion of the oxide film through a thermal nitration process. A damage to the thin-film structure generated in the plasma nitration process may be at least partially cured in the thermal nitration process, and/or may be cured in a post-thermal treatment process.
摘要翻译：在非易失性半导体器件中使用的薄膜结构的形成方法中，在基板上形成氧化膜。通过等离子体硝化工艺对氧化膜的上部进行硝化，在氧化物膜上形成上部氮化物膜。通过热硝化处理使氧化膜的下部硝化，在基板和氧化膜之间形成下部氮化膜。在等离子体硝化过程中产生的薄膜结构的损坏可以在热硝化过程中至少部分地固化，和/或可以在后热处理过程中固化。

57. 发明授权

US06624496B2 Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer 有权
公开(公告)号：US06624496B2
公开(公告)日：2003-09-23
申请号：US10044991
申请日：2002-01-15
申请人： Ja-Hum Ku , Dong-Ho Ahn , Chul-Sung Kim , Jae-Yoon Yoo , Sug-Hun Hong , Chul-Joon Choi
发明人： Ja-Hum Ku , Dong-Ho Ahn , Chul-Sung Kim , Jae-Yoon Yoo , Sug-Hun Hong , Chul-Joon Choi
IPC分类号： H01L2176
CPC分类号： H01L29/66598 , H01L21/28518 , H01L21/76232 , H01L21/823481 , H01L29/41783 , H01L29/665 , H01L29/66636
摘要： A method of forming a T-shaped isolation layer, a method of forming an elevated salicide source/drain region using the same, and a semiconductor device having the T-shaped isolation layer are provided. In the method of forming the T-shaped isolation layer, an isolation layer having a narrow trench region in the lower portion thereof and a wide trench region in the upper portion thereof is formed on a semiconductor substrate. Also, in the method of forming the elevated salicide source/drain region, the method of forming the T-shaped isolation layer is used. In particular, conductive impurities can also be implanted into the lower portion of the wide trench region which constitutes the head of the T-shaped isolation layer and is extended to both sides from the upper end of the narrow trench region by controlling the depth of the wide trench region in an ion implantation step for forming the source/drain region.

58. 发明授权

US06442487B2 Reliability measures for statistical prediction of geophysical and geological parameters in geophysical prospecting 有权
标题翻译：地球物理勘探地球物理和地质参数统计预报的可靠性测度
公开(公告)号：US06442487B2
公开(公告)日：2002-08-27
申请号：US09729576
申请日：2000-12-04
申请人： Chul-Sung Kim
发明人： Chul-Sung Kim
IPC分类号： G01V150
CPC分类号： G01V1/50 , G01V1/32
摘要： A method for assessing reliability of a prediction model constructed from N training data attribute vectors and N associated observed values of a specified parameter. Each training data attribute vector includes seismic attributes obtained from seismic data traces located at or near a well and each associated observed value is obtained from well log or core data from the well. A predicted value of the specified parameter is determined for each of the N training data attribute vectors, from the training data attribute vectors and the prediction model. A residual is determined for each of the N training data attribute vectors, as the difference between the associated observed value and the predicted value of the specified parameter for the training data attribute vector. An attribute vector for the designated location is determined.
摘要翻译：一种用于评估由N个训练数据属性向量和指定参数的N个相关观察值构建的预测模型的可靠性的方法。每个训练数据属性向量包括从位于井或井附近的地震数据轨迹获得的地震属性，并且每个相关联的观测值从井的井测井或岩心数据获得。根据训练数据属性向量和预测模型，针对N个训练数据属性向量中的每一个确定指定参数的预测值。确定N个训练数据属性向量中的每一个的残差作为训练数据属性向量的相关观测值与指定参数的预测值之间的差。确定指定位置的属性向量。

59. 发明授权

US06435841B1 Hermetic reciprocating compressor 失效
标题翻译：密封往复式压缩机
公开(公告)号：US06435841B1
公开(公告)日：2002-08-20
申请号：US09706160
申请日：2000-11-03
申请人： Chul-sung Kim
发明人： Chul-sung Kim
IPC分类号： F04B1700
CPC分类号： F04B39/0033 , F04B39/121
摘要： A hermetic reciprocating compressor has a rigidity increasing portion for increasing the rigidity of a sealed casing of the compressor to control transmission noise that is transmitted through the sealed casing and to reduce the noise of the compressor. The rigidity increasing portion includes an elastic member which exerts elasticity between a compression device portion and a lower shell of the compressor. The elastic member increases the rigidity of the lower shell of the compressor to produce noise controlling effects similar to that which results from an increase in the thickness of the shell of the compressor itself Accordingly, noise and vibration levels are improved by the sealed casing, and the noise of the compressor can be reduced. The elastic member includes a body having an annular hole in contact with the center of the bottom of the lower shell and a plurality of supporting legs extending from the body. The lower shell of the compressor has a plurality of snubbers arranged thereon, and each supporting leg of the elastic member is connected to a respective snubber. As a result, the transmission path of the vibration, from the electronic device portion and the compression device portion to the sealed casing, is dispersed, with some of the vibration being absorbed by the sealed casing itself. Accordingly, vibration of the compressor is reduced.
摘要翻译：密封往复式压缩机具有刚性增加部分，用于增加压缩机的密封壳体的刚性，以控制通过密封壳体传递的传动噪声并降低压缩机的噪音。刚性增大部分包括在压缩机的压缩装置部分和下壳体之间施加弹性的弹性构件。弹性部件增加了压缩机的下壳体的刚性，从而产生类似于压缩机本身壳体厚度增加所产生的噪音控制效果。因此，通过密封的壳体提高噪声和振动水平，并且可以降低压缩机的噪音。弹性构件包括具有与下壳体的底部的中心接触的环形孔的主体和从主体延伸的多个支撑腿。压缩机的下壳体上设置有多个缓冲器，弹性构件的每个支撑腿连接到相应的缓冲器。结果，从电子设备部分和压缩设备部分到密封壳体的振动的传输路径被分散，其中一些振动被密封的壳体本身吸收。因此，压缩机的振动减小。

60. 发明授权

US06218690B1 Transistor having reverse self-aligned structure 有权
标题翻译：晶体管具有反向自对准结构
公开(公告)号：US06218690B1
公开(公告)日：2001-04-17
申请号：US09376041
申请日：1999-08-16
申请人： Hyoung-sub Kim , Ja-hum Ku , Chul-sung Kim , Jung-woo Park
发明人： Hyoung-sub Kim , Ja-hum Ku , Chul-sung Kim , Jung-woo Park
IPC分类号： H01L2976
CPC分类号： H01L29/66606 , H01L29/66621
摘要： A reverse self-aligned field effect transistor and a method of fabricating the same are provided. The reverse self-aligned transistor includes a source formed on an active region of a semiconductor substrate and a drain formed on the active region of the semiconductor substrate, the drain being positioned a predetermined distance from the source. A silicide film is formed on the source and the drain. Insulative film spacers are formed on sidewalls of a trench, the trench being formed by etchin the semiconductor substrate between the source and the drain. A gate insulative film is formed on a lower portion of the trench and a metal gate is formed on the gate insulative film between the insulative film spacers. The metal gate is electrically isolated from the source and the drain by the insulative film spacers.
摘要翻译：提供了反向自对准场效应晶体管及其制造方法。反向自对准晶体管包括形成在半导体衬底的有源区上的源极和形成在半导体衬底的有源区上的漏极，漏极位于与源极预定的距离处。在源极和漏极上形成硅化物膜。绝缘膜间隔物形成在沟槽的侧壁上，沟槽通过蚀刻在源极和漏极之间的半导体衬底形成。栅极绝缘膜形成在沟槽的下部，并且在绝缘膜间隔物上的栅极绝缘膜上形成金属栅极。金属栅极通过绝缘膜间隔物与源极和漏极电隔离。

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