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41. 发明授权

US09712128B2 Microelectromechanical resonator 有权
公开(公告)号：US09712128B2
公开(公告)日：2017-07-18
申请号：US15186510
申请日：2016-06-19
申请人： SiTime Coporation
发明人： Joseph C. Doll , Nicholas Miller , Charles I. Grosjean , Paul M. Hagelin , Ginel C. Hill
IPC分类号： H01L41/047 , H03H3/007 , H03H9/17 , H03H9/15 , H03H3/02
CPC分类号： H03H3/0077 , H03H9/02259 , H03H9/02401 , H03H9/02448 , H03H9/1057 , H03H9/17 , H03H9/2463 , H03H2003/027 , H03H2009/02307 , H03H2009/155
摘要： In a MEMS device having a substrate and a moveable micromachined member, a mechanical structure secures the moveable micromachined member to the substrate, thermally isolates the moveable micromachined member from the substrate and provides a conduction path to enable heating of the moveable micromachined member to a temperature of at least 300 degrees Celsius.

42. 发明授权

US09705469B2 Nano- and micro-electromechanical resonators 有权
公开(公告)号：US09705469B2
公开(公告)日：2017-07-11
申请号：US15240356
申请日：2016-08-18
申请人： Northeastern University
发明人： Matteo Rinaldi , Zhenyun Qian , Yu Hui
IPC分类号： H03H9/02 , H03H9/13 , H03H9/15 , G01J5/44 , H03H9/17 , G01J5/04 , H03H3/02 , H01L41/18 , H03H9/24
CPC分类号： H03H9/02244 , G01J5/046 , G01J5/44 , H01L41/18 , H01L41/1873 , H03H3/02 , H03H9/13 , H03H9/15 , H03H9/17 , H03H9/19 , H03H2003/027 , H03H2009/155 , H03H2009/241
摘要： A resonator including a piezoelectric plate and an interdigital electrode is provided. A ratio between a thickness of the plate and a pitch of the interdigital electrode may be from about 0.5 to about 1.5. A radiation detector including a resonator and an absorber layer capable of absorbing at least one of infrared and terahertz radiation is provided. A resonator including a piezoelectric plate and a two-dimensional electrically conductive material is provided.

43. 发明授权

US09673778B2 Solid mount bulk acoustic wave resonator structure comprising a bridge 有权
公开(公告)号：US09673778B2
公开(公告)日：2017-06-06
申请号：US13337458
申请日：2011-12-27
申请人： Chris Feng , John Choy , Phil Nikkel
发明人： Chris Feng , John Choy , Phil Nikkel
IPC分类号： H03H9/15 , H03H9/13 , H03H9/02 , H03H9/17
CPC分类号： H03H9/132 , H03H9/02118 , H03H9/02149 , H03H9/175
摘要： A solid mount bulk acoustic wave resonator, comprises a first electrode; a second electrode; a piezoelectric layer disposed between the first and second electrodes; and an acoustic reflector comprising a plurality of layers and disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the acoustic reflector, the first electrode, the second electrode and the piezoelectric layer defines an active area of the acoustic resonator, and the piezoelectric layer extends over an edge of the first electrode. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. The bridge overlaps a portion of the first electrode.

44. 发明申请

US20170134001A1 ACOUSTIC RESONATOR DEVICES AND FABRICATION METHODS PROVIDING HERMETICITY AND SURFACE FUNCTIONALIZATION 审中-公开
公开(公告)号：US20170134001A1
公开(公告)日：2017-05-11
申请号：US15334528
申请日：2016-10-26
申请人： Qorvo US, Inc.
发明人： John Belsick , Rick Morton , Matthew Ryder
IPC分类号： H03H9/02 , G01N29/036 , H03H9/13 , H03H9/15 , H03H3/02 , H03H3/007
CPC分类号： G01N29/022 , G01N29/222 , G01N29/2437 , G01N2291/012 , G01N2291/014 , G01N2291/015 , G01N2291/0255 , G01N2291/0256 , G01N2291/0426 , H03H9/175
摘要： A micro-electrical-mechanical system (MEMS) resonator device includes a top side electrode overlaid with a low water permeability hermeticity layer and an interface layer including a material (e.g., gold or a hydroxylated oxide surface) suitable for receiving a self-assembled monolayer (SAM) that may be functionalized with a functionalization (e.g., specific binding) material, with the foregoing layers being designed to have insubstantial impact on sensor performance. Atomic layer deposition may be used for deposition of the hermeticity and/or interface layers. The hermeticity layer protects the electrode material from attack in corrosive liquid environments, and the interface layer facilitates proper chemical binding of the SAM. Sensors and microfluidic devices incorporating MEMS resonator devices are also provided.

45. 发明授权

US09645117B2 Piezoelectric unit, piezoelectric device, piezoelectric determination apparatus, and state determination method 有权
公开(公告)号：US09645117B2
公开(公告)日：2017-05-09
申请号：US14409265
申请日：2013-05-21
申请人： SEIKO INSTRUMENTS INC.
发明人： Sachiko Tanabe , Masayuki Suda , Hiroshi Muramatsu
IPC分类号： G01N29/02 , G01N11/16 , G01N29/028 , H01L41/047 , H03H9/15 , H03H9/25 , H03H9/17 , G01N5/02 , G01N9/34
CPC分类号： G01N29/022 , G01N5/02 , G01N9/34 , G01N11/16 , G01N29/028 , G01N2291/022 , G01N2291/0256 , G01N2291/02818 , G01N2291/0422 , G01N2291/0426 , H01L41/047 , H03H9/15 , H03H9/177 , H03H9/25
摘要： A piezoelectric unit 1 includes a piezoelectric element that causes thickness shear vibration, a first electrode provided on one surface of the piezoelectric element, a second electrode and a third electrode which are provided on an opposite surface to the one surface which is provided with the first electrode of the piezoelectric element and are electrically insulated from each other, and a switching portion that is connected to the first electrode, the second electrode, and the third electrode, in which the switching portion can switch measurement modes between a mass/viscoelasticity measurement mode for measuring mass of a substance which is in contact with the piezoelectric element or viscoelasticity by vibrating the piezoelectric element, and an electrical characteristic measurement mode for measuring electrical characteristics between the second electrode and the third electrode.

46. 发明授权

US09491550B2 Piezoelectric stack transducer 有权
标题翻译：压电叠层传感器
公开(公告)号：US09491550B2
公开(公告)日：2016-11-08
申请号：US14100299
申请日：2013-12-09
申请人： Foundation of Soongsil University-Industry Cooperation
发明人： Jin Oh Kim , Dae Jong Kim
IPC分类号： H03H9/15 , H04R17/10 , H04R1/24
CPC分类号： H04R17/10 , H03H9/15 , H04R1/24
摘要： Provided is a piezoelectric stack transducer. In a transducer portion, a plurality of piezoelectric transducers which output maximum amplitude at different frequencies are continuously stacked. A stacked electrode portion is provided on both surfaces of each of the plurality of continuously stacked piezoelectric transducers and supplies an electric signal so that vibration is generated. In this case, the plurality of piezoelectric transducers have different diameters. According to the present invention, it is possible to implement a piezoelectric stack transducer which exhibits constant amplitude (output) at different frequencies by piezoelectric transducers exhibiting different amplitudes at respective frequencies according to natural frequencies supplementing amplitude of a different piezoelectric transducer.
摘要翻译：提供了一种压电叠层传感器。在换能器部分中，以不同频率输出最大振幅的多个压电换能器被连续堆叠。在多个连续堆叠的压电换能器的每一个的两个表面上设置堆叠的电极部分，并且提供电信号以产生振动。在这种情况下，多个压电换能器具有不同的直径。根据本发明，可以实现按照补偿不同压电换能器的振幅的固有频率，在各个频率下呈现不同振幅的压电换能器在不同频率下呈现恒定振幅（输出）的压电叠层换能器。

47. 发明授权

US09385303B2 Resonator and fabricating method thereof 有权
标题翻译：谐振器及其制造方法
公开(公告)号：US09385303B2
公开(公告)日：2016-07-05
申请号：US14073509
申请日：2013-11-06
申请人： Samsung Electronics Co., Ltd.
发明人： In Sang Song , Ho Soo Park , Duck Hwan Kim , Chul Soo Kim , Sang Uk Son , Jea Shik Shin , Moon Chul Lee
IPC分类号： H03H9/15 , H03H9/00 , H01L41/22 , H01L41/314 , H03H9/13 , H03H9/17
CPC分类号： H01L41/314 , H03H9/132 , H03H9/174 , H03H9/175
摘要： Provided are a resonator and a method of fabricating the same. The resonator may include a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a control layer disposed on the second electrode and having a frame with an uneven surface.
摘要翻译：提供一种谐振器及其制造方法。谐振器可以包括设置在基板上的第一电极，设置在第一电极上的压电层，设置在压电层上的第二电极，以及设置在第二电极上并具有不平坦表面的框架的控制层。

48. 发明授权

US09225313B2 Bulk acoustic wave resonator having doped piezoelectric layer with improved piezoelectric characteristics 有权
标题翻译：具有具有改进的压电特性的掺杂压电层的体声波谐振器
公开(公告)号：US09225313B2
公开(公告)日：2015-12-29
申请号：US13662425
申请日：2012-10-27
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Paul Bradley , John D. Larson, III , Steve Gilbert , Kevin J. Grannen , Ivan Ionash , Chris Feng , Tina Lamers , John Choy
IPC分类号： H03H9/15 , H03H9/02 , H03H9/13 , H03H9/17
CPC分类号： H03H9/02015 , H03H9/02031 , H03H9/132 , H03H9/173 , H03H9/175
摘要： A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with one of erbium or yttrium at an atomic percentage of greater than three for improving piezoelectric properties of the piezoelectric layer.
摘要翻译：体声波（BAW）谐振器结构包括设置在衬底上的第一电极，设置在第一电极上的压电层和设置在第一压电层上的第二电极。压电层由掺杂有铒或钇中的一种的原子百分比大于3的压电材料形成，以改善压电层的压电性能。

49. 发明授权

US09059396B2 Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure 有权
标题翻译：具有单晶束的集成半导体器件，制造方法和设计结构
公开(公告)号：US09059396B2
公开(公告)日：2015-06-16
申请号：US14024171
申请日：2013-09-11
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： David L. Harame , Stephen E. Luce , Anthony K. Stamper
IPC分类号： H01L21/76 , H01L21/70 , H01L41/09 , G06F17/50 , H01L21/84 , H01L27/12 , H03H3/02 , H03H9/10 , H03H9/17 , H01L41/332 , H03H1/00 , H03H9/15
CPC分类号： H01L41/083 , G06F17/5068 , H01L21/84 , H01L27/1203 , H01L41/081 , H01L41/094 , H01L41/332 , H03H3/02 , H03H9/1007 , H03H9/173 , H03H2001/0064 , H03H2003/027 , H03H2009/155
摘要： Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes providing further sacrificial material in a trench of a lower wafer. The method further includes bonding the lower wafer to the insulator, under the single crystalline beam. The method further includes venting the sacrificial material and the further sacrificial material to form an upper cavity above the single crystalline beam and a lower cavity, below the single crystalline beam.
摘要翻译：提供了与CMOS器件集成的体声波滤波器和/或体声波谐振器，制造方法和设计结构。该方法包括从绝缘体上的硅层形成单晶束。该方法还包括在单晶束上提供绝缘体材料涂层。该方法还包括通过绝缘体材料形成通孔。该方法还包括在通孔和绝缘体材料上提供牺牲材料。该方法还包括在牺牲材料上提供盖子。该方法还包括在下晶片的沟槽中提供另外的牺牲材料。该方法还包括在单晶束下将下晶片接合到绝缘体。该方法还包括排出牺牲材料和另外的牺牲材料，以在单晶束之下形成单结晶束上方的上空腔和在单晶束下方的下腔。

50. 发明授权

US08966993B2 Three dimensional piezoelectric MEMS 有权
标题翻译：三维压电MEMS
公开(公告)号：US08966993B2
公开(公告)日：2015-03-03
申请号：US13719588
申请日：2012-12-19
申请人： U.S. Army Research Laboratory
发明人： Jeffrey S. Pulskamp , Ronald G. Polcawich
IPC分类号： G01N3/00 , H03H9/205 , G01L1/00 , H03H3/02 , H03H9/15
CPC分类号： H03H9/205 , G01L1/005 , G01L1/16 , H03H3/02 , H03H2009/155 , Y10T29/42
摘要： Method and apparatus for a piezoelectric apparatus are provided. In some embodiments, a method for fabricating a piezoelectric device may include etching a series of vertical trenches in a top substrate portion, depositing a first continuous conductive layer over the trenches and substrate, depositing a continuous piezoelectric layer over the first continuous conductive layer such that the piezoelectric material has trenches and sidewalls, depositing a second continuous conductive layer over the continuous piezoelectric layer, etching through the vertical trenches of the first continuous conductive layer, continuous piezoelectric layer, second continuous conductive layer, and top substrate portion into a bottom substrate portion, etching a series of horizontal trenches in the bottom substrate portion such that the horizontal trenches and vertical trenches occupy a continuous free space and allow movement of a piezoelectric MEMS device created by the above method in three dimensions.
摘要翻译：提供了压电装置的方法和装置。在一些实施例中，用于制造压电器件的方法可以包括蚀刻顶部衬底部分中的一系列垂直沟槽，在沟槽和衬底上沉积第一连续导电层，在第一连续导电层上沉积连续的压电层，使得压电材料具有沟槽和侧壁，在连续压电层上沉积第二连续导电层，通过第一连续导电层，连续压电层，第二连续导电层和顶部衬底部分的垂直沟槽蚀刻成底部衬底部分蚀刻底部衬底部分中的一系列水平沟槽，使得水平沟槽和垂直沟槽占据连续的自由空间，并允许通过上述方法在三维中产生的压电MEMS器件的移动。

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