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41. 发明授权

US11463063B2 Method for packaging an electronic component in a package with an organic back end 有权
公开(公告)号：US11463063B2
公开(公告)日：2022-10-04
申请号：US16521727
申请日：2019-07-25
申请人： Zhuhai Crystal Resonance Technologies Co., Ltd.
发明人： Dror Hurwitz , BawChing Perng , Duan Feng
IPC分类号： G11C16/04 , H03H3/02 , H01L41/313 , H01L41/319 , H01L41/332 , H01L41/337 , H01L41/338 , H03H9/05 , H03H9/10 , H03H9/17
摘要： A method for fabricating an array of front ends for an array of packaged electronic components that each comprise:
an electrical element packaged within a package comprising
a front part of a package comprising an inner section with a cavity therein opposite the resonator defined by the raised frame and an outer section sealing said cavity; and
a back part of the package comprising a back cavity in an inner back section, and an outer back section sealing the cavity, said back package further comprising a first and a second via through the back end around said at least one back cavity for coupling to front and back electrodes of the electronic component; the vias terminating in external contact pads that are coupleable in a ‘flip chip’ configuration to a circuit board; the method comprising the stages of: i. Obtaining a carrier substrate having an active membrane layer attached thereto by its rear surface, with a front electrode on the front surface of the active membrane layer; ii. Obtaining an inner front end section; iii. Attaching the inner front end section to the exposed front surface of the front electrode; iv. Detaching the carrier substrate from the rear surface of the active membrane layer; v. Optionally thinning the inner front section; vi. Processing the rear surface by removing material to create an array of at least one island of active membrane on at least one island of front electrode; vii. Creating an array of at least one front cavity by selectively removing at least outer layer of the inner front end section, such that there is one cavity opposite each island of membrane on the front side of the front electrode on the opposite side to the island of active membrane; viii. Applying an outer front end section to the inner front end section and bonding the outer front end section to an outer surface of the inner front end section such that the outer front end section spans across and seals the at least one cavity of the array of front cavities.

42. 发明授权

US11335848B2 Production of lead-free piezoceramics in aqueous surroundings 有权
公开(公告)号：US11335848B2
公开(公告)日：2022-05-17
申请号：US15750728
申请日：2016-08-08
申请人： CeramTec GmbH
发明人： Hans-Jürgen Schreiner , Tanja Einhellinger-Müller , Friederike Assmann
IPC分类号： H01L41/187 , H01L41/43 , C04B35/626 , H01L41/318 , C04B35/475 , C04B35/462 , C04B35/624 , C04B35/64 , H01L41/257 , H01L41/337 , C04B35/495
摘要： The invention relates to a method for producing ceramics having piezoelectric properties in predominantly aqueous suspending agents.

43. 发明申请

US20210226600A1 RESONATOR AND FABRICATION METHOD THEREOF 有权
公开(公告)号：US20210226600A1
公开(公告)日：2021-07-22
申请号：US17203041
申请日：2021-03-16
申请人： Ningbo Semiconductor International Corporation (Shanghai Branch)
发明人： Guohuang YANG
IPC分类号： H03H3/02 , H01L41/27 , H01L41/08 , H01L41/047 , H01L41/313 , H01L41/337
摘要： The present disclosure provides a resonator and its fabrication method. The method includes providing a first substrate; forming a piezoelectric stacked layer-structure on the first substrate; forming a sacrificial layer covering the piezoelectric stacked layer-structure on a working region; providing a second substrate; forming an adhesive layer on the second substrate; attaching a second back surface of the adhesive layer to the sacrificial layer and the piezoelectric stacked layer-structure exposed by the sacrificial layer, where the adhesive layer covers sidewalls of the sacrificial layer and is filled between the second substrate and the piezoelectric stacked layer-structure; removing the first substrate to expose a first front surface of the piezoelectric stacked layer-structure; forming release holes passing through the piezoelectric stacked layer-structure, or forming release holes passing through the second substrate; and removing the sacrificial layer through the release holes to form a cavity.

44. 发明授权

US10964882B2 Bonding method 有权
公开(公告)号：US10964882B2
公开(公告)日：2021-03-30
申请号：US16135689
申请日：2018-09-19
申请人： NGK INSULATORS, LTD.
发明人： Tomoyoshi Tai , Yuji Hori , Keiichiro Asai , Takashi Yoshino , Masashi Goto , Masahiko Namerikawa
IPC分类号： H01L41/313 , H01L41/187 , H03H3/08 , H01L41/39 , H01L41/337 , H03H9/25 , H03H9/02 , H03H9/05 , H03H9/145 , H03H9/17 , H01L23/00 , C08J5/18 , H01L51/56 , C09J7/35
摘要： A bonding layer 3 is formed over a piezoelectric material substrate, and the bonding layer is made of one or more materials selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentoxide, mullite, niobium pentoxide and titanium oxide. A neutralized beam is irradiated onto a surface of the bonding layer and a surface of a supporting body to activate the surface of the bonding layer and the surface of the supporting body. The surface of the bonding layer and the surface of the supporting body are bonded by direct bonding.

45. 发明申请

US20200304087A1 PIEZOELECTRIC ACOUSTIC RESONATOR WITH IMPROVED TCF MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS 审中-公开
公开(公告)号：US20200304087A1
公开(公告)日：2020-09-24
申请号：US16893026
申请日：2020-06-04
申请人： Akoustis, Inc.
发明人： Dae Ho KIM , Frank BI , Mary WINTERS , Ramakrishna VETURY , Abhay KOCHHAR
IPC分类号： H03H3/02 , H03H9/05 , H03H9/10 , H03H9/13 , H03H9/17 , H03H9/54 , H01L41/047 , H01L41/053 , H01L41/08 , H01L41/18 , H01L41/23 , H01L41/29 , H01L41/317 , H01L41/337 , H03H9/02
摘要： A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include temperature compensation layers (TCL) that improve the device TCF. These layers can be thin layers of oxide type materials and can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, between two or more piezoelectric layers, and any combination thereof. In an example, the TCLs can be configured from thick passivation layers overlying the top electrode and/or underlying the bottom electrode.

46. 发明授权

US10771032B2 Method for manufacturing piezoelectric thin-film element 有权
公开(公告)号：US10771032B2
公开(公告)日：2020-09-08
申请号：US15750821
申请日：2016-07-25
申请人： PIEZO STUDIO INC. , TOHOKU UNIVERSITY
发明人： Kenji Inoue , Akira Yoshikawa , Yuji Ohashi , Yuui Yokota , Kei Kamada , Shunsuke Kurosawa
IPC分类号： H03H3/04 , H03H3/02 , H01L41/337 , H03H9/13 , H03H9/17 , H01L41/29 , H03H9/05 , H03H9/56
摘要： To improve the Q value of a piezoelectric thin-film element in a state in which unnecessary vibration is suppressed, an acoustic reflection film (104) is affixed to a first electrode (102), a piezoelectric single-crystal substrate (101) is thinned by polishing from the other surface (101b) of the piezoelectric single-crystal substrate (101), such that the first electrode (102) and piezoelectric thin film (105) are piled on the piezoelectric single-crystal substrate (101). In this polishing, a pressure (polishing pressure) to the surface (101b) during polishing in an electrode formation region where the first electrode (102) is formed differs from that in a non-electrode formation region around the electrode formation region. Consequently, the electrode formation region of the piezoelectric thin film (105), where the first electrode (102) is formed, is made thinner than the non-electrode formation region around the electrode formation region.

47. 发明申请

US20200220514A1 PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS 审中-公开
公开(公告)号：US20200220514A1
公开(公告)日：2020-07-09
申请号：US16822689
申请日：2020-03-18
申请人： Akoustis, Inc.
发明人： Dae Ho KIM , Mary WINTERS , Ramakrishna VETURY , Jeffrey B. SHEALY
IPC分类号： H03H3/02 , H03H9/02 , H03H9/13 , H03H9/17 , H03H9/10 , H03H9/05 , H01L41/337 , H01L41/317 , H01L41/29 , H01L41/23 , H01L41/18 , H01L41/08 , H01L41/053 , H01L41/047 , H03H9/54
摘要： A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

48. 发明授权

US10601389B2 Elastic wave device 有权
公开(公告)号：US10601389B2
公开(公告)日：2020-03-24
申请号：US15586315
申请日：2017-05-04
申请人： Murata Manufacturing Co., Ltd.
发明人： Daisuke Sekiya , Taku Kikuchi , Hiroshi Tanaka
IPC分类号： H03H9/25 , H03H3/10 , H03H3/08 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/145 , H03H9/64 , H01L23/367 , H01L41/297 , H01L41/337 , H01L41/338 , H01L41/053
摘要： An elastic wave device includes IDT electrodes on a first main surface of a piezoelectric substrate and a heat dissipating film on a second main surface and including a pair of opposing main surfaces and side surfaces connecting the pair of main surfaces. At least a portion of the side surfaces of the heat dissipating film is located in an inner side portion relative to the outer circumference of the second main surface of the piezoelectric substrate on an arbitrary cross section along a direction connecting the pair of main surfaces of the heat dissipating film.

49. 发明申请

US20200021269A1 ELECTRONIC DEVICES FORMED IN A CAVITY BETWEEN SUBSTRATES 审中-公开
公开(公告)号：US20200021269A1
公开(公告)日：2020-01-16
申请号：US16582010
申请日：2019-09-25
申请人： SKYWORKS SOLUTIONS, INC.
发明人： Atsushi Takano
IPC分类号： H03H9/10 , H03H9/17 , H01L25/065 , H01L21/18 , B23K20/16 , H01L41/337 , H01L23/00 , H01L41/338 , H01L41/313 , H03H9/05 , H03H3/02 , B23K26/402 , B23K1/00 , B23K26/382
摘要： An electronic device includes a first substrate and a second substrate. A side wall joins the first substrate to the second substrate. The side wall includes a first alloy layer of a first metal and a second metal bonded directly to an upper surface of the first substrate and a second alloy layer of the first metal and a third metal disposed on top of the first alloy layer and bonded directly to a lower surface of the second substrate, the second metal and the third metal being different from each other and from the first metal. An electronic circuit is disposed on the lower surface of the second substrate within a cavity defined by the lower surface of the first substrate, the upper surface of the second substrate, and the side wall.

50. 发明申请

US20190288658A1 PIEZOELECTRIC ACOUSTIC RESONATOR MANUFACTURED WITH PIEZOELECTRIC THIN FILM TRANSFER PROCESS 审中-公开
公开(公告)号：US20190288658A1
公开(公告)日：2019-09-19
申请号：US16433849
申请日：2019-06-06
申请人： Akoustis, Inc.
发明人： Dae Ho KIM , Mary WINTERS , Ramakrishna VETURY , Jeffrey B. SHEALY
IPC分类号： H03H3/02 , H03H9/17 , H03H9/02 , H03H9/13 , H03H9/10 , H03H9/05 , H01L41/337 , H01L41/317 , H01L41/29 , H01L41/23 , H01L41/18 , H01L41/08 , H01L41/053 , H01L41/047 , H03H9/54
摘要： A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

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