专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20220123195A1 SACRIFICIAL MATERIAL FACILITATING PROTECTION OF A SUBSTRATE IN A QUBIT DEVICE 有权
公开(公告)号：US20220123195A1
公开(公告)日：2022-04-21
申请号：US17071528
申请日：2020-10-15
申请人： International Business Machines Corporation
发明人： Vivekananda P. Adiga , Martin S. Sandberg , Jeng-Bang Yau , David L. Rath , John Bruley , Cihan Kurter , Kenneth P. Rodbell , Hongwen Yan
IPC分类号： H01L39/24 , H01L39/02 , H01L39/08
摘要： Devices, systems, methods, and/or computer-implemented methods that can facilitate protection of a substrate in a qubit device using sacrificial material are provided. According to an embodiment, a device can comprise a superconducting lead provided on a pillar of a sacrificial material provided on a substrate. The device can further comprise a collapsed superconducting junction provided on the substrate and coupled to the superconducting lead.

42. 发明申请

US20220102425A1 FABRICATION METHODS 有权
公开(公告)号：US20220102425A1
公开(公告)日：2022-03-31
申请号：US17382174
申请日：2021-07-21
申请人： Microsoft Technology Licensing, LLC
发明人： Kevin Van Hoogdalem , Leonardus Kouwenhoven , Pavel Aseev , Peter Krogstrup Jeppesen
IPC分类号： H01L27/18 , C23C14/28 , C30B11/12 , C30B23/06 , H01L29/06 , H01L39/22 , H01L39/24 , H01L39/06
摘要： Various fabrication methods are disclosed. In one such method, at least one structure is formed on a substrate which protrudes outwardly from a plane of the substrate. A beam is used to form a layer of material, at least part of which is in direct contact with a semiconductor structure on the substrate, the semiconductor structure comprising at least one nanowire. The beam has a non-zero angle of incidence relative to the normal of the plane of the substrate such that the beam is incident on one side of the protruding structure, thereby preventing a portion of the nanowire in a shadow region adjacent the other side of the protruding structure in the plane of the substrate from being covered with the material.

43. 发明授权

US11289638B2 Superconducting qubit lifetime and coherence improvement via backside etching 有权
公开(公告)号：US11289638B2
公开(公告)日：2022-03-29
申请号：US16908704
申请日：2020-06-22
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Douglas Max Gill , Martin O. Sandberg , Vivekananda P. Adiga , Yves Martin , Hanhee Paik
IPC分类号： H01L39/02 , H01L39/22 , H01L27/18 , H01L39/24 , H01L39/12
摘要： A method for improving lifetime and coherence time of a qubit in a quantum mechanical device is provided. The method includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit having capacitor pads. The method further includes at least one of removing an amount of substrate material from the backside of the substrate at an area opposite the at least one qubit or depositing a superconducting metal layer at the backside of the substrate at the area opposite the at least one qubit to reduce radiofrequency electrical current loss due to at least one of silicon-air (SA) interface, metal-air (MA) interface or silicon-metal (SM) interface so as to enhance a lifetime (T1) and a coherence time (T2) in the at least one qubit.

44. 发明授权

US11289637B2 Transmon qubits with trenched capacitor structures 有权
公开(公告)号：US11289637B2
公开(公告)日：2022-03-29
申请号：US16381563
申请日：2019-04-11
申请人： International Business Machines Corporation
发明人： Vivekananda P. Adiga , Martin O. Sandberg , Jerry M. Chow , Hanhee Paik
IPC分类号： H01L39/22 , H01L39/02 , G06N10/00 , H01L39/12 , H01L39/24
摘要： A qubit includes a substrate, and a first capacitor structure having a lower portion formed on a surface of the substrate and at least one first raised portion extending above the surface of the substrate. The qubit further includes a second capacitor structure having a lower portion formed on the surface of the substrate and at least one second raised portion extending above the surface of the substrate. The first capacitor structure and the second capacitor structure are formed of a superconducting material. The qubit further includes a junction between the first capacitor structure and the second capacitor structure. The junction is disposed at a predetermined distance from the surface of the substrate and has a first end in contact with the first raised portion and a second end in contact with the second raised portion.

45. 发明授权

US11271125B2 Complementary metal-oxide semiconductor compatible patterning of superconducting nanowire single-photon detectors 有权
公开(公告)号：US11271125B2
公开(公告)日：2022-03-08
申请号：US16848662
申请日：2020-04-14
申请人： PSIQUANTUM CORP.
发明人： Faraz Najafi , Mark Thompson , Damien Bonneau , Joaquin Matres Abril
IPC分类号： H01L31/0352 , H01L31/18 , H01L31/0232 , H01L31/109 , H01L39/24 , G01J1/42 , H01L39/10 , G01J1/44
摘要： A device includes a first semiconductor layer; a portion of a second semiconductor layer disposed on the first semiconductor layer; and a third semiconductor layer including a first region disposed on the portion of the second semiconductor layer and a second region disposed on the first semiconductor layer. A thickness of the first region is less than a predefined thickness. The device also includes an etch stop layer disposed on the third semiconductor layer; a plurality of distinct portions of a fourth semiconductor layer disposed on the etch stop layer and exposing one or more distinct portions of the etch stop layer over the portion of the second semiconductor layer; and a plurality of distinct portions of a superconducting layer disposed on the plurality of distinct portions of the fourth semiconductor layer and the exposed one or more distinct portions of the etch stop layer.

46. 发明授权

US11264150B2 Method for producing an at least two-part structure, in particular a semifinished product for a superconducting wire 有权
公开(公告)号：US11264150B2
公开(公告)日：2022-03-01
申请号：US15877936
申请日：2018-01-23
申请人： Bruker EAS GmbH
发明人： Klaus Schlenga , Vital Abaecherli , Bernd Sailer , Manfred Thoener , Matheus Wanior
IPC分类号： H01B12/04 , H01L39/24 , H01L39/12 , B33Y10/00
摘要： A method for producing an at least two-part structure, such as a semifinished product for a superconducting wire is provided. A first structure and a second structure are separately produced, and the first structure and the second structure are then inserted one into the other. The first structure and the second structure are respectively produced in layers by selective laser melting or selective electron beam melting of a powder. The method produces two-part structures for semifinished products of superconducting wires.

47. 发明申请

US20220028927A1 HEAVY-HEX CONNECTION TOPOLOGY TO RECTILINEAR PHYSICAL LAYOUT 有权
公开(公告)号：US20220028927A1
公开(公告)日：2022-01-27
申请号：US16935698
申请日：2020-07-22
申请人： International Business Machines Corporation
发明人： Isaac Lauer , Neereja Sundaresan
IPC分类号： H01L27/18 , G06N10/00 , H01L39/22 , H01L39/24
摘要： Systems and techniques that facilitate mapping a heavy-hex qubit connection topology to a rectilinear physical qubit layout are provided. In various embodiments, a device can comprise a qubit lattice on a substrate. In various aspects, the qubit lattice can comprise one or more first qubit tiles. In various cases, the one or more first qubit tiles can have a first shape. In various instances, the qubit lattice can further comprise one or more second qubit tiles. In various cases, the one or more second qubit tiles can have a second shape. In various aspects, the one or more first qubit tiles can be tessellated with the one or more second qubit tiles. In various embodiments, the qubit lattice can exhibit a rectilinear physical layout. In various embodiments, the one or more first qubit tiles tessellated with the one or more second qubit tiles can form a heavy-hex qubit connection topology in the rectilinear physical layout of the qubit lattice. In various embodiments, one of the one or more first qubit tiles can have twelve qubits and twelve interqubit connection buses. In various cases, one of the one or more second qubit tiles can have twelve qubits and twelve interqubit connection buses. In various embodiments, adjacent qubit tiles in the heavy-hex qubit connection topology can share three qubits. In various embodiments, a qubit tile in the heavy-hex qubit connection topology can be adjacent to four qubit tiles having a different shape than the qubit tile. In various cases, the qubit tile can be adjacent to two qubit tiles having a same shape as the qubit tile.

48. 发明申请

US20210408356A1 Diode Devices Based on Superconductivity 有权
公开(公告)号：US20210408356A1
公开(公告)日：2021-12-30
申请号：US17114062
申请日：2020-12-07
申请人： PsiQuantum Corp.
发明人： Faraz Najafi , Syrus Ziai
IPC分类号： H01L39/08 , H01L39/14 , H01L29/861 , H01L39/24 , H01L39/06 , H01L39/16 , B32B17/10 , B32B37/26 , H01L21/683 , H01L23/24 , H01L27/12
摘要： An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. For a range of current magnitudes, when a magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.

49. 发明申请

US20210399193A1 QUANTUM DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20210399193A1
公开(公告)日：2021-12-23
申请号：US17349180
申请日：2021-06-16
申请人： NEC Corporation
发明人： Kenji NANBA , Ayami YAMAGUCHI , Akira MIYATA , Katsumi KIKUCHI , Suguru WATANABE , Takanori NISHI , Hideyuki SATOU
IPC分类号： H01L39/04 , H01L39/24
摘要： A quantum device (100) includes: an interposer (112); a quantum chip (111); a first connection part (130) that is provided between the interposer (112) and the quantum chip (111) and electrically connects a wiring layer of the interposer (112) to a wiring layer of the quantum chip (111); and a second connection part (140) that is provided on a main surface of the interposer (112) where the first connection part (130) is arranged and is connected to a cooling plate (115).

50. 发明申请

US20210391525A1 SUPERCONDUCTING STRESS-ENGINEERED MICRO-FABRICATED SPRINGS 有权
公开(公告)号：US20210391525A1
公开(公告)日：2021-12-16
申请号：US16897667
申请日：2020-06-10
申请人： PALO ALTO RESEARCH CENTER INCORPORATED
发明人： CHRISTOPHER L. CHUA , EUGENE M. CHOW
IPC分类号： H01L39/08 , H01L39/24 , H01R13/03 , H01R13/24
摘要： A structure has a substrate, and a spring structure disposed on the substrate, the spring structure having an anchor portion disposed on the substrate, an elastic material having an intrinsic stress profile that biases a region of the elastic material to curl away from the substrate, and a superconductor film in electrical contact with a portion of the elastic material. A method of manufacturing superconductor structures includes depositing a release film on a substrate, forming a stack of films comprising an elastic material and a superconductor film, releasing a portion of the elastic material by selective removal of the release film so that portion lifts out of the substrate plane to form elastic springs. A method of manufacturing superconductor structures includes depositing a release film on a substrate, forming a stack of films comprising at least an elastic material, releasing a portion of the elastic material so that portion lifts out of a plane of the substrate to form elastic springs, and coating the elastic springs with a superconductor film.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式