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    • 41. 发明申请
    • Aqueous dispersion for chemical mechanical polishing
    • 化学机械抛光用水分散体
    • US20020005017A1
    • 2002-01-17
    • US09820749
    • 2001-03-30
    • JSR Corporation
    • Masayuki MotonariMasayuki HattoriNobuo Kawahashi
    • C09G001/00
    • C09G1/02C09K3/1463C23F3/00H01L21/3212Y10T428/325
    • It is an object of the present invention to provides an aqueous CMP dispersion with an adequately high initial removal rate, and which, even after repeated polishing, exhibits at least one, and preferably two or more, of the following functions and effects; (1) reduction of performance of polishing pads is suppressed and an adequate removal rate is maintained, (2) generation of pits on polishing surfaces is inhibited, and (3) uneven sections on polishing surfaces are flattened, and satisfactory finished surfaces can be formed with high precision. The aqueous CMP dispersion comprises an abrasive, an organic compound and water. The organic compound with an effect of suppressing reduction of performance of polishing pads may be biphenol, bipyridyl, vinylpyridine, adenine or the like. The organic compound with an effect of inhibiting generation of pits on polishing surfaces may be biphenol, bipyridyl, vinylpyridine, hypoxanthine or the like. The organic compound with an effect of flattening uneven sections on polishing surfaces may be biphenol, bipyridyl, vinylpyridine, salicylaldoxime or the like. The aqueous CMP dispersion of the present invention that contains specific organic compounds has at least one and especially two functions and effects from among that of suppressing reduction of performance of polishing pads, that of suppressing void wearing of polishing surfaces and that of flattening polishing surfaces, as well as a combination of these three functions and effects, even with repeated polishing. The aqueous CMP dispersion is particularly useful for polishing of copper films, and can form satisfactory finished surfaces with high precision.
    • 本发明的目的是提供具有足够高的初始去除速率的水性CMP分散体,并且即使在重复抛光之后,其表现出以下功能和效果中的至少一个,优选两个或更多个。 (1)抑制抛光垫的性能降低,并且保持适当的除去速度,(2)抑制抛光面上的凹坑的产生,(3)研磨面上的不均匀部分变平,可以形成令人满意的成品表面 精度高。 水性CMP分散体包含研磨剂,有机化合物和水。 具有抑制抛光垫性能降低的效果的有机化合物可以是联苯酚,联吡啶,乙烯基吡啶,腺嘌呤等。 具有抑制在研磨面上产生凹坑的效果的有机化合物可以是联苯酚,联吡啶,乙烯基吡啶,次黄嘌呤等。 在抛光表面上具有使不平坦部分变平的效果的有机化合物可以是联苯酚,联吡啶基,乙烯基吡啶,水杨醛肟等。 含有特定有机化合物的本发明的含水CMP分散体具有抑制抛光垫的性能降低,抑制研磨面的空白磨损和抛光面平坦化的功能和效果中的至少一个以上特征, 以及这三种功能和效果的组合,即使重复抛光。 水性CMP分散体对于铜膜的研磨特别有用,可以高精度地形成令人满意的成品表面。
    • 42. 发明授权
    • Rare earth metal-based permanent magnet
    • 稀土金属永磁体
    • US09287027B2
    • 2016-03-15
    • US12990341
    • 2008-05-14
    • Yukimitsu MiyaoTsutomu Nakamura
    • Yukimitsu MiyaoTsutomu Nakamura
    • H01F1/057B32B15/04C22C9/00C22C13/00H01F41/02
    • H01F1/0577C22C9/00C22C13/00H01F41/026Y10T428/32Y10T428/325
    • An objective of the present invention is to provide a rare earth metal-based permanent magnet with improved adhesion properties. A rare earth metal-based permanent magnet of the present invention as a means for achieving the objective has a laminated plating film, and is characterized in that the plating film comprises as an outermost surface layer a SnCu alloy plating film having a film thickness in a range from 0.1 μm to 2 μm, the composition of the SnCu alloy plating film is 35 mass % or more but less than 55 mass % of Sn and the rest being Cu, and a base plating film having two or more layers including at least a Ni plating film and a Cu plating film which are formed as the lower layer under the SnCu alloy plating film, and among the base plating film, the Ni plating film is located just below the SnCu alloy plating film. A joined structure fabricated using the rare earth metal-based permanent magnet of the present invention exhibits favorable initial adhesion strength when combined with a silicone-based adhesive, and is less deteriorated in adhesion strength even after a moisture resistance test.
    • 本发明的目的是提供一种具有改进的粘合性能的稀土金属基永磁体。 本发明的稀土金属类永磁体作为实现目的的手段具有叠层电镀膜,其特征在于,所述镀膜包含作为最外表面层的SnCu合金镀膜,膜厚度为 在0.1μm〜2μm的范围内,SnCu合金镀膜的成分为Sn的35质量%以上且小于55质量%,其余为Cu,并且具有两层以上的基底镀膜至少含有 Ni镀覆膜和Cu电镀膜,在SnCu合金镀膜之下形成为下层,并且在底镀膜中,Ni镀膜位于SnCu合金镀膜的正下方。 使用本发明的稀土类金属类永磁体制造的接合结构,与硅酮类粘合剂组合时,表现出良好的初期粘合强度,即使在耐湿试验之后,粘合强度也劣化。