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    • 43. 发明申请
    • RADIATION DETECTOR
    • 辐射探测器
    • US20150255636A1
    • 2015-09-10
    • US14715614
    • 2015-05-19
    • FUJIFILM CORPORATION
    • Seiji YAMASHITAToshihiro ISE
    • H01L31/0272H01L31/117
    • H01L31/0272H01L27/14676H01L31/085H01L31/095H01L31/115H01L31/117H01L31/20H01L51/0037H01L51/0046H01L51/4213H01L2031/0344Y02E10/549
    • A radiation detector (10) which has a multilayer structure that includes: a first electrode (34); a second electrode (49) that is disposed so as to face the first electrode; a selenium layer (48) that is disposed between the first electrode and the second electrode and contains amorphous selenium; a first blocking organic layer (38) that is adjacent to the selenium layer, between the first electrode and the selenium layer, and that contains a hole transport material having an electron affinity of 3.7 eV or less; and a second blocking organic layer (37) that is adjacent to the selenium layer, between the second electrode and the selenium layer, and that contains an electron transport material having an ionization potential of 5.9 eV or more. This radiation detector (10) has low dark current, excellent durability, and less afterimages.
    • 一种具有多层结构的放射线检测器(10),包括:第一电极(34); 设置成与第一电极相对的第二电极(49); 设置在第一电极和第二电极之间并含有非晶硒的硒层(48); 位于第一电极和硒层之间的与硒层相邻的第一阻挡有机层(38),并且包含电子亲和力为3.7eV以下的空穴传输材料; 以及与第二电极和硒层之间的硒层相邻的第二阻挡有机层(37),并且包含电离势为5.9eV以上的电子传输材料。 该辐射检测器(10)具有低暗电流,优异的耐久性和较少的残影。