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41. 发明申请

US20140203239A1 SOLID-STATE TRANSDUCER DEVICES WITH OPTICALLY-TRANSMISSIVE CARRIER SUBSTRATES AND RELATED SYSTEMS, METHODS, AND DEVICES 有权
标题翻译：具有光传输载体基板的固态传感器装置及相关系统，方法和装置
公开(公告)号：US20140203239A1
公开(公告)日：2014-07-24
申请号：US13747182
申请日：2013-01-22
申请人： MICRON TECHNOLOGY, INC.
发明人： Martin F. Schubert , Vladimir Odnoblyudov , Scott D. Schellhammer
IPC分类号： H01L31/02 , H01L31/0352 , H01L33/58 , H01L31/0236
CPC分类号： H01L33/0025 , H01L25/0753 , H01L25/167 , H01L27/14687 , H01L31/02 , H01L31/0236 , H01L31/035209 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. In some embodiments, the individual semiconductor structures are singulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures.
摘要翻译：具有固态换能器（SST）器件和相关半导体器件，系统的半导体器件组件，并在此公开。在一个实施例中，形成半导体器件组件的方法包括在支撑衬底和转移结构之间形成支撑衬底，转移结构和多个半导体结构。该方法还包括去除支撑衬底以暴露各个半导体结构的有源表面和各个半导体结构之间的沟槽。半导体结构可以附着到光学透射性的载体衬底上，使得有源表面可以通过载体衬底发射和/或接收光。然后可以在移除支撑衬底的情况下在载体衬底上处理各个半导体结构。在一些实施例中，各个半导体结构从半导体器件组件分离，并且包括连接到每个单个半导体结构的载体衬底的一部分。

42. 发明授权

US08766330B2 Method and system for generating a photo-response from MoS2 Schottky junctions 有权
标题翻译：用于从MoS2肖特基接头产生光响应的方法和系统
公开(公告)号：US08766330B2
公开(公告)日：2014-07-01
申请号：US13661979
申请日：2012-10-26
申请人： Makarand Paranjape , Paola Barbara , Amy Liu , Marcio Fontana
发明人： Makarand Paranjape , Paola Barbara , Amy Liu , Marcio Fontana
IPC分类号： H01L31/108
CPC分类号： H01L33/005 , H01L31/032 , H01L31/035209 , H01L31/07 , H01L31/1013 , H01L31/18 , H01L33/0041 , H01L33/06 , H01L33/28 , H01L33/40 , Y02E10/50
摘要： Devices incorporating a single to a few-layer MoS2 channels in combination with optimized substrate, dielectric, contact and electrode materials and configurations thereof, exhibit light emission, photoelectric effect, and superconductivity, respectively.
摘要翻译：结合单层至几层MoS2通道的设备与优化的基板，电介质，接触和电极材料及其构造相结合，分别显示出发光，光电效应和超导性。

43. 发明授权

US08735719B2 Leaky solar array with spatially separated collectors 有权
标题翻译：泄漏的太阳能阵列与空间分离的收集器
公开(公告)号：US08735719B2
公开(公告)日：2014-05-27
申请号：US13357451
申请日：2012-01-24
申请人： John T. Apostolos , Judy Feng , William Mouyos
发明人： John T. Apostolos , Judy Feng , William Mouyos
IPC分类号： H01L31/00 , H01L31/0232 , H01L31/052
CPC分类号： H01L31/02325 , G02B6/1228 , G02B6/34 , H01L31/0232 , H01L31/035209 , H01L31/0547 , H01L31/1085 , H01Q1/248 , H01Q13/22 , H01Q21/068 , Y02E10/52
摘要： A leaky travelling wave array of optical elements provide a solar wavelength rectenna.
摘要翻译：光学元件的泄漏行波阵列提供太阳波波长整流天线。

44. 发明申请

US20140054540A1 DEVICE INCLUDING SEMICONDUCTOR NANOCRYSTALS & METHOD 审中-公开
标题翻译：包括半导体纳米晶体和方法的器件
公开(公告)号：US20140054540A1
公开(公告)日：2014-02-27
申请号：US13900272
申请日：2013-05-22
申请人： QD Vision, Inc.
发明人： Zhaoqun Zhou , Peter T. Kazlas , Marshall Cox
IPC分类号： H01L29/06 , H01L33/06 , H01L33/00 , H01L31/0352 , H01L21/02 , H01L31/18
CPC分类号： H01L29/0665 , H01L21/02601 , H01L31/035209 , H01L31/035218 , H01L31/18 , H01L33/005 , H01L33/06 , H01L51/0036 , H01L51/0037 , H01L51/426 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： A method of making a device comprising semiconductor nanocrystals comprises forming a first layer capable of transporting charge over a first electrode, wherein forming the first layer comprises disposing a metal layer over the first electrode and oxidizing at least the surface of the metal layer opposite the first electrode to form a metal oxide, disposing a layer comprising semiconductor nanocrystals over the oxidized metal surface, and disposing a second electrode over the layer comprising semiconductor nanocrystals. A device comprises a layer comprising semiconductor nanocrystals disposed between a first electrode and a second electrode, and a first layer capable of transporting charge disposed between the layer comprising semiconductor nanocrystals one of the electrodes, wherein the first layer capable of transporting charge comprises a metal layer wherein at least the surface of the metal layer facing the layer comprising semiconductor nanocrystals is oxidized prior to disposing semiconductor nanocrystals thereover.
摘要翻译：制造包含半导体纳米晶体的器件的方法包括形成能够在第一电极上传输电荷的第一层，其中形成第一层包括在第一电极上设置金属层，并至少将金属层的表面氧化成与第一电极相对的第一层电极以形成金属氧化物，在氧化的金属表面上设置包含半导体纳米晶体的层，以及在包含半导体纳米晶体的层上设置第二电极。一种器件包括设置在第一电极和第二电极之间的包含半导体纳米晶体的层，以及能够传输设置在包括半导体纳米晶体的层之间的电荷的第一层，其中电极的一个电极包括金属层其中至少在面向包含半导体纳米晶体的层的金属层的表面在其上设置半导体纳米晶体之前被氧化。

45. 发明申请

US20130298977A1 METHOD OF FORMING AN ARRAY OF NANOSTRUCTURES 有权
标题翻译：形成纳米结构阵列的方法
公开(公告)号：US20130298977A1
公开(公告)日：2013-11-14
申请号：US13882631
申请日：2011-10-31
申请人： Yi Chen , G. Logan Liu
发明人： Yi Chen , G. Logan Liu
IPC分类号： H01L21/02 , H01L31/0352 , H01L29/06
CPC分类号： H01L21/02612 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L29/0665 , H01L31/02363 , H01L31/035209 , H01L31/035227 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming an array of nanostructures includes forming a plurality of seed points on a surface of a substrate, and growing masks from the seed points to create masked regions of the substrate underlying the masks. A remainder of the substrate comprises an unmasked region. Each mask and masked region increase in size with growth time while the unmasked region of the substrate decreases in size. During the growing, the unmasked region is etched to remove material from the substrate in a depth direction, and, simultaneously, unetched structures are formed from the masked regions of the substrate underlying the masks. Each of the unetched structures has a lateral size that increases with depth.
摘要翻译：形成纳米结构阵列的方法包括在衬底的表面上形成多个种子点，以及从种子点生长掩模以产生掩模下面的衬底的掩蔽区域。衬底的其余部分包括未掩模区域。每个掩模和掩模区域随着生长时间而增大，而衬底的未掩模区域的尺寸减小。在生长期间，蚀刻未掩模区域以在深度方向上从衬底去除材料，并且同时从掩模下面的衬底的掩蔽区域形成未蚀刻的结构。每个未蚀刻的结构具有随深度增加的横向尺寸。

46. 发明申请

US20130284270A1 COMPOUND SEMICONDUCTOR THIN FILM SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：化合物半导体薄膜太阳能电池及其制造方法
公开(公告)号：US20130284270A1
公开(公告)日：2013-10-31
申请号：US13926518
申请日：2013-06-25
申请人： TOPPAN PRINTING CO., LTD.
发明人： Yiwen ZHANG , Akira Yamada
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/0322 , H01L31/035209 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： A compound semiconductor thin film solar cell is provided, which includes a light-absorbing layer made of a compound semiconductor and a buffer layer formed on the light-absorbing layer. The buffer layer is formed with use of an ink containing nanoparticles each containing at least a metal element and an element of Group 16.
摘要翻译：提供了一种化合物半导体薄膜太阳能电池，其包括由化合物半导体制成的光吸收层和形成在光吸收层上的缓冲层。使用含有至少含有金属元素和第16族元素的含有纳米颗粒的墨水形成缓冲层。

47. 发明授权

US08569102B2 Method of manufacturing high density CIS thin film for solar cell and method of manufacturing thin film solar cell using the same 有权
标题翻译：制造太阳能电池用高密度CIS薄膜的方法及使用其制造薄膜太阳能电池的方法
公开(公告)号：US08569102B2
公开(公告)日：2013-10-29
申请号：US13695627
申请日：2011-07-19
申请人： Se-Jin Ahn , Jae-Ho Yun , Ji-Hye Gwak , Ara Cho , Kyung-Hoon Yoon , Kee-Shik Shin , Seoung-Kyu Ahn , Ki-Bong Song
发明人： Se-Jin Ahn , Jae-Ho Yun , Ji-Hye Gwak , Ara Cho , Kyung-Hoon Yoon , Kee-Shik Shin , Seoung-Kyu Ahn , Ki-Bong Song
IPC分类号： H01L21/00 , C25D21/12 , C01B19/04
CPC分类号： H01L31/035209 , B82Y30/00 , C01B19/002 , C01G15/006 , C01P2004/03 , C01P2004/64 , H01L31/0322 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： Disclosed are a high density CIS thin film and a method of manufacturing the same, which includes coating CIS nanopowders, CIGS nanopowders or CZTS nanopowders on a substrate by non-vacuum coating, followed by heat treatment with cavities between the nanopowders filled with filling elements such as copper, indium, gallium, zinc, tin, and the like. The high density CIS thin film is applied to a photo-absorption layer of a thin film solar cell, thereby providing a highly efficient thin film solar cell.
摘要翻译：公开了一种高密度CIS薄膜及其制造方法，其包括通过非真空涂覆将CIS纳米粉末，CIGS纳米粉末或CZTS纳米粉末涂覆在基材上，随后在填充有填充元素的纳米粉末之间的空腔进行热处理如铜，铟，镓，锌，锡等。将高密度CIS薄膜施加到薄膜太阳能电池的光吸收层，从而提供高效率的薄膜太阳能电池。

48. 发明申请

US20130199610A1 Process for Producing a Transparent Electrode, Method of Manufacturing a Photovoltaic Cell Array 审中-公开
标题翻译：制造透明电极的方法，制造光电池阵列的方法
公开(公告)号：US20130199610A1
公开(公告)日：2013-08-08
申请号：US13813418
申请日：2011-07-29
申请人： Kun Ho Ahn
发明人： Kun Ho Ahn
IPC分类号： H01L31/0232 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/02327 , H01L31/022466 , H01L31/035209 , H01L31/075 , H01L31/1884 , Y02E10/548
摘要： A method can be used to produce a photovoltaic cell. A first transparent electrically conductive layer is deposited over the substrate. A metal oxide layer is deposited over a surface of the electrically conductive layer facing away from the substrate. The metal oxide layer is subdivided into a number of metal particles by a thermal decomposition. A second transparent electrically conductive layer is deposited over the metal particles.
摘要翻译：可以使用一种方法来生产光伏电池。在衬底上沉积第一透明导电层。金属氧化物层沉积在远离衬底的导电层的表面上。金属氧化物层通过热分解被细分成多个金属颗粒。第二透明导电层沉积在金属颗粒上。

49. 发明授权

US08373156B2 Biological component detection device 有权
标题翻译：生物成分检测装置
公开(公告)号：US08373156B2
公开(公告)日：2013-02-12
申请号：US13122926
申请日：2009-07-30
申请人： Youichi Nagai , Yasuhiro Iguchi
发明人： Youichi Nagai , Yasuhiro Iguchi
IPC分类号： H01L29/06 , H01L31/0232 , H01L31/102
CPC分类号： A61B5/1455 , A61B5/14532 , G01J3/0218 , G01J2003/2866 , G01N21/359 , G01N21/474 , H01L27/1446 , H01L31/035209 , H01L31/1035
摘要： Provided is a biological component detection device with which a biological component can be detected at high sensitivity by using an InP-based photodiode in which a dark current is reduced without using a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more. An absorption layer 3 has a multiple quantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusing an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016/cm3 or less, the diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the absorption layer, the portion having a low impurity concentration. The biological component detection device is characterized in that an examination is conducted by receiving light having at least one wavelength of 3 μm or less, the wavelength being included in an absorption band of the biological component.
摘要翻译：本发明提供一种生物成分检测装置，其通过使用其中暗电流减小而不使用冷却机构的InP基光电二极管，以高灵敏度检测生物成分，并且灵敏度延伸至1.8μm以上的波长。吸收层3具有由III-V族半导体构成的多量子阱结构，通过选择性地扩散吸收层中的杂质元素形成pn结15，并且吸收层中杂质元素的浓度为5× 1016 / cm3以下，扩散浓度分布控制层在扩散前的n型杂质浓度为2×1015 / cm3以下，扩散浓度分布控制层具有与吸收层相邻的部分，该部分具有杂质浓度低。生物成分检测装置的特征在于，通过接收具有3μm以下的波长的波长的波长包含在生物成分的吸收带中进行检查。

50. 发明申请

US20130014814A1 NANOSTRUCTURED ARRAYS FOR RADIATION CAPTURE STRUCTURES 审中-公开
标题翻译：用于辐射捕获结构的纳米结构阵列
公开(公告)号：US20130014814A1
公开(公告)日：2013-01-17
申请号：US13513928
申请日：2011-01-10
申请人： Sang Eon Han , Anastassios Mavrokefalos , Matthew Sanders Branham , Gang Chen
发明人： Sang Eon Han , Anastassios Mavrokefalos , Matthew Sanders Branham , Gang Chen
IPC分类号： H01L31/0248
CPC分类号： H01L31/035209 , H01L31/02363 , Y02E10/50
摘要： Silicon nanohole arrays are disclosed as light absorbing structures for various devices such as solar photovoltaics. To obtain the same ultimate efficiency as a standard 300 micrometer crystalline silicon wafer, nanohole arrays require less silicon by mass. Moreover, calculations suggest that nanohole arrays may have efficiencies superior to nanorod arrays for practical thicknesses. With well-established fabrication techniques, nanohole arrays have great potential for efficient solar photovoltaics.
摘要翻译：硅纳米孔阵列被公开为用于各种装置如太阳能光伏的吸光结构。为了获得与标准300微米晶体硅晶片相同的最终效率，纳米孔阵列需要较少的硅质量。此外，计算表明，对于实际厚度，纳米孔阵列的效率优于纳米棒阵列。通过成熟的制造技术，纳米孔阵列具有高效太阳能光伏发电的巨大潜力。

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