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    • 41. 发明授权
    • System and method for making a conductive polymer coating
    • 制造导电聚合物涂层的系统和方法
    • US6083557A
    • 2000-07-04
    • US958918
    • 1997-10-28
    • James F. BelcherStephen L. Whicker
    • James F. BelcherStephen L. Whicker
    • C23C14/06G01J5/20G01J5/34H01L27/146C23C16/00
    • C23C14/06G01J5/20G01J5/34H01L27/1465
    • This is a system and method of forming a conductive polymer optical coating on an infrared detection system. The apparatus may include an upper vacuum chamber, a shutter assembly mounted inside the upper vacuum chamber, a substrate holder disposed inside the shutter assembly, wherein the shutter assembly is capable of shielding or exposing the substrate to the upper vacuum chamber, an orifice connected to the upper vacuum chamber for control of a flow rate for the upper vacuum chamber, a first mechanical pump system connected to the orifice, a lower vacuum chamber connected to the upper vacuum chamber on a side opposite the shutter assembly, an electron beam assembly for providing a low-melting-point electrical conductor vapor, disposed inside the lower vacuum chamber, wherein the electron beam assembly is directed toward the shutter assembly in the upper vacuum chamber, a second mechanical pump system and a cryopump connected to the lower vacuum chamber, a polymer generation chamber for providing polymer vapor, connected to the upper vacuum chamber on a side perpendicular to the shutter assembly, a vaporizer surrounding a first portion of the polymer generation chamber, a pyrolysis furnace surrounding a second portion of the polymer generation chamber, and a post pyrolysis heater surrounding a third portion of the polymer generation chamber.
    • 这是在红外检测系统上形成导电聚合物光学涂层的系统和方法。 该设备可以包括上真空室,安装在上真空室内部的活门组件,设置在活门组件内部的衬底保持器,其中活门组件能够将衬底屏蔽或暴露于上真空室, 用于控制上真空室的流量的上真空室,连接到孔的第一机械泵系统,在与快门组件相对的一侧连接到上真空室的下真空室,用于提供 设置在下部真空室内的低熔点电导体蒸汽,其中电子束组件指向上部真空室中的活门组件,第二机械泵系统和连接到下部真空室的低温泵, 用于提供聚合物蒸气的聚合物产生室,在垂直于活门的一侧连接到上真空室 包括围绕聚合物产生室的第一部分的蒸发器,围绕聚合物产生室的第二部分的热解炉和围绕聚合物产生室的第三部分的后裂解加热器。
    • 42. 发明授权
    • Infrared-sensitive conductive-polymer coating
    • 红外敏感导电聚合物涂层
    • US6080987A
    • 2000-06-27
    • US958955
    • 1997-10-28
    • James F. BelcherStephen L. Whicker
    • James F. BelcherStephen L. Whicker
    • G01J5/08H01L27/146
    • G01J5/02G01J5/022G01J5/024G01J5/08G01J5/0853H01L27/1462H01L27/1465H01L27/1469G01J5/046
    • This is a novel conductive-polymer optical coating for infrared detection and method of making the same. The system may comprise an integrated circuit substrate itself comprising a plurality of mesas and comprising via connections on an upper portion of each of the mesas. The system further comprises a plurality of backside electrical contacts bonded to the via connections, a plurality of infrared-sensitive pixels overlying the electrical contacts, and a conductive-polymer optical coating overlying and electrically connecting the pixels. A method of forming an embodiment of the present invention may comprise forming a conductive-polymer optical coating over a substrate, forming a contact metal on a backside of the substrate, and processing the contact metal, the substrate and the common electrode to form capacitor pixels of the contact metal, the substrate and the corresponding portion of the optical coating.
    • 这是用于红外检测的新型导电聚合物光学涂层及其制造方法。 该系统可以包括集成电路基板本身,其包括多个台面并且包括每个台面的上部上的通孔连接。 该系统还包括多个粘合到通孔连接的背面电触点,覆盖电触点的多个红外敏感像素和覆盖并电连接像素的导电聚合物光学涂层。 形成本发明的实施例的方法可以包括在衬底上形成导电聚合物光学涂层,在衬底的背面形成接触金属,以及处理接触金属,衬底和公共电极以形成电容器像素 的接触金属,基底和光学涂层的相应部分。
    • 43. 发明授权
    • Thermal detector with stress-aligned thermally sensitive element and
method
    • 具有应力对准热敏元件和方法的热探测器
    • US6020216A
    • 2000-02-01
    • US920261
    • 1997-08-22
    • Howard R. BeratanCharles M. Hanson
    • Howard R. BeratanCharles M. Hanson
    • H01L27/146H01L31/09
    • H01L27/1465
    • Method of stress-aligning a thermally sensitive element may comprise the step of forming a thin film layer of thermally sensitive material (80). The thin film layer of thermally sensitive material (80) may be crystallized. A stress alignment layer (82) may be formed in communication with the thin film layer of thermally sensitive material (80). The thin film layer of thermally sensitive material (80) may be heated above a transition temperature of the thermally sensitive material. The stress alignment layer (82) may be expanded relative to the thin film layer of thermally sensitive material (80). The thin film layer of thermally sensitive material (80) may be cooled below the transition temperature of the thermally sensitive material. The stress alignment layer (82) may be compressed relative to the thin film layer of thermally sensitive material (80) as the thin film layer of thermally sensitive material (80) cools below the transition temperature to preferentially-order crystals of the thermally sensitive material.
    • 应力对准热敏元件的方法可包括形成热敏材料薄膜层(80)的步骤。 热敏材料(80)的薄膜层可以结晶。 可以形成与热敏材料(80)的薄膜层连通的应力取向层(82)。 可以将热敏材料(80)的薄膜层加热到热敏材料的转变温度以上。 应力取向层(82)可以相对于热敏材料(80)的薄膜层膨胀。 热敏材料(80)的薄膜层可以被冷却到热敏材料的转变温度以下。 当热敏材料(80)的薄膜层冷却到转变温度以下时,应力取向层(82)可相对于热敏材料(80)的薄膜层被压缩以优先排列热敏材料的晶体 。
    • 44. 发明授权
    • Multicolor photonic radiation detector
    • 多色光子辐射探测器
    • US5981950A
    • 1999-11-09
    • US13210
    • 1998-01-26
    • Michel WolnyGerard Destefanis
    • Michel WolnyGerard Destefanis
    • H01L27/146H04N5/33H01L25/065G01J5/22
    • H04N5/332H01L27/1465H01L27/14652H04N5/33
    • A multicolor radiation detector capable of detecting at least two incident radiations with two distinct wave lengths .lambda.i1 and .lambda.s1 where wave length .lambda.s1 is greater than wave length .lambda.i1. The multicolor radiation detector includes two detection components. The first detection component is configured to detect at least the radiation with wave length .lambda.i1 and to be transparent to at least to the radiation of wave length .lambda.s1. The first detection component includes a matrix of detection pixels of n1 rows and m1 columns and a matrix of reading pixels of n1 rows and m1 columns wherein the reading pixels are transparent to the radiation with wave length .lambda.s1 in at least one portion of each pixel. The second detection component is configured to detect at least the radiation with wave length .lambda.s1. The second detection component includes a matrix of detection pixels of n2 rows and m2 columns and a matrix of reading pixels of n2 rows and m2 columns. The first detection component is configured to face incident radiation such that the first detection component receives the incident radiation of wave length .lambda.i1 before the second detection component receives the radiation of wave length .lambda.s1 and n1, m1, n2 and m2 are whole numbers equal to or greater than one.
    • 一种能够检测具有两个不同波长λ1和λ1的至少两个入射辐射的多色辐射检测器,其中波长λs1大于波长λi1。 多色辐射检测器包括两个检测部件。 第一检测部件被配置为至少检测具有波长λ1的辐射,并且至少对波长λs1的辐射是透明的。 第一检测部件包括n1行和m1列的检测像素的矩阵以及n1行和m1列的读取像素的矩阵,其中读取像素对于每个像素的至少一部分中的具有波长λs1的辐射是透明的 。 第二检测部件被配置为至少检测具有波长λs1的辐射。 第二检测部件包括n2行和m2列的检测像素矩阵和n2行和m2列的读取像素的矩阵。 第一检测部件被配置为面对入射辐射,使得第一检测部件在第二检测部件接收到波长λs1的辐射之前接收波长λ1的入射辐射,并且n1,m1,n2和m2是整数相等 到或大于1。
    • 45. 发明授权
    • Double sided interdiffusion process and structure for a double layer
heterojunction focal plane array
    • 双层异质结焦平面阵列的双面相互扩散过程和结构
    • US5846850A
    • 1998-12-08
    • US706583
    • 1996-09-05
    • Peter D. DreiskeChang-Feng Wan
    • Peter D. DreiskeChang-Feng Wan
    • H01L27/146H01L31/18
    • H01L27/1465
    • This invention relates to a process and structure for performing a high temperature or other process on both sides of a thin slice of material or die prior to being placed onto a integrated circuit or multi-chip module. In a particular embodiment, a process and structure is given to provide for double sided interdiffusion for passivation of a Mercury Cadmium Telluride (MCT) film which is mounted to a read-out integrated circuit (ROIC) face side up in order to fabricate vertically integrated Focal Plane Arrays (FPAs) with reduced dark currents and improved performance. The process of the present invention also allows for the insertion of novel materials such as Double Layer Heterojunction (DLHJ), MBE, MOCVD, etc. in the vertical integrated approach to FPAs.
    • 本发明涉及一种用于在被放置在集成电路或多芯片模块上之前在薄片材料或管芯的两侧执行高温或其它工艺的工艺和结构。 在特定实施例中,提供了一种工艺和结构来提供用于钝化碲化汞碲化镉(MCT)膜的双面相互扩散,其将面向一侧的面向上安装到读出集成电路(ROIC),以制造垂直集成 焦平面阵列(FPA)具有降低的暗电流和改进的性能。 本发明的方法还允许在垂直集成方法中插入诸如双层异质结(DLHJ),MBE,MOCVD等的新型材料。
    • 46. 发明授权
    • Two-color infrared detector
    • 双色红外探测器
    • US5751049A
    • 1998-05-12
    • US305639
    • 1994-09-14
    • Michael W. Goodwin
    • Michael W. Goodwin
    • H01L27/146H01L27/14H01L31/00
    • H01L27/1465H01L27/14652
    • A two-color infrared detector (50) is provided comprising elements (10, 110, or 210) having one or more diodes (58, 158 and 168) and a metal insulator semiconductor ("MIS") device (56 and 156). The infrared detector (50) may be referred to as a vertically integrated capacitor diode. The diodes comprise regions (12, 14, 16, 112, 114, and 116) of semiconductor materials which are operable to generate electron-hole pairs when struck by infrared radiation (40) having first and second wavelengths. The capacitor (156) includes a gate (24) provided by the MIS device which is operable to generate a potential well in the first semiconductor region (12 and 112) in conjunction with an insulator layer (22) and collect charges generated by the first wavelength of infrared radiation (40). The layers of semiconductor material may be varied to enhance the performance of the resulting infrared detector.
    • 提供了包括具有一个或多个二极管(58,158和168)和金属绝缘体半导体(“MIS”)器件(56和156)的元件(10,110或210)的双色红外检测器(50)。 红外检测器(50)可以被称为垂直集成的电容器二极管。 二极管包括半导体材料的区域(12,14,16,112,114和116),当被具有第一和第二波长的红外辐射(40)击打时,半导体材料可操作以产生电子 - 空穴对。 电容器(156)包括由MIS器件提供的栅极(24),其可操作以在第一半导体区域(12和112)中结合绝缘体层(22)产生势阱,并收集由第一 红外辐射波长(40)。 可以改变半导体材料层以增强所得到的红外检测器的性能。
    • 47. 发明授权
    • Self-focusing detector pixel structure having improved sensitivity
    • 具有提高灵敏度的自聚焦检测器像素结构
    • US5721429A
    • 1998-02-24
    • US685363
    • 1996-07-23
    • William A. RadfordJerry A. Wilson
    • William A. RadfordJerry A. Wilson
    • H01L27/146H01L31/0232H01L31/0352
    • H01L27/1465H01L27/14603H01L27/1462H01L27/14627
    • An array of photodetectors is constructed of IR radiation-responsive Group II-VI alloy semiconductor material, such as HgCdTe. A novel photodetector structure utilizes internal reflections from mesa (10, 10') sidewalls and/or from reflective material (22) that is applied to the mesa sidewalls to achieve a concentration of incident infrared radiation into a significantly smaller radiation absorbing region (16). The resulting self-focusing or light piping effect enables the leakage current and other noise-generating processes to be minimized, while providing an effective large optical collection area. The fabrication of specular, flat, sloped mesa sidewalls is preferably accomplished by a reactive ion etch process. Signal crosstalk between photodetectors is reduced or eliminated since the radiation absorbing regions are fully delineated and isolated from one another by deep trenches that define the mesa sidewalls. Thus, the diffusion of optically generated carriers from one photodetector to an adjacent photodetector is prevented.
    • 一组光电探测器由IR辐射响应II-VI族合金半导体材料构成,如HgCdTe。 新颖的光电检测器结构利用来自台面(10,10')侧壁和/或反射材料(22)的内部反射,其被施加到台面侧壁,以将入射的红外辐射的浓度实现为明显较小的辐射吸收区域(16) 。 由此产生的自聚焦或光线管道效应可以使泄漏电流和其他噪声产生过程最小化,同时提供有效的大的光学收集区域。 镜面,平坦,倾斜的台面侧壁的制造优选通过反应离子蚀刻工艺来实现。 减少或消除了光电检测器之间的信号串扰,因为辐射吸收区域通过限定台面侧壁的深沟槽彼此完全描绘和隔离。 因此,防止光学生成的载体从一个光电检测器扩散到相邻的光电检测器。
    • 49. 发明授权
    • Imbalanced layered composite focal plane array structure
    • 不平衡层状复合焦平面阵列结构
    • US5714760A
    • 1998-02-03
    • US669076
    • 1996-06-24
    • Rolin K. Asatourian
    • Rolin K. Asatourian
    • G01J5/06H01L27/146G01J5/16
    • G01J5/06H01L27/1465
    • A focal plane array (FPA) including a layered composite structure having several layers of materials with differing thermal expansion coefficients (TECs) and thicknesses to stabilize and maintain FPA performance during thermal cycling and excursions. An optical substrate is coupled to a multiplexer through a network of indium bumps. The typical TEC mismatch of the layered materials is offset by particularly selecting the types of materials used and the thicknesses of the individual layers of the FPA. Consequently, undesirable deflections and distortion of the multiplexer and the indium bumps are minimized, thereby substantially improving FPA reliability.
    • 焦平面阵列(FPA),包括具有不同热膨胀系数(TEC)和厚度的多层材料的分层复合结构,以在热循环和偏移期间稳定和维持FPA性能。 光学衬底通过铟凸块的网络耦合到多路复用器。 通过特别选择使用的材料类型和FPA的各层的厚度来抵消层状材料的典型TEC失配。 因此,多路复用器和铟凸块的不期望的偏转和失真被最小化,从而显着提高了FPA的可靠性。