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41. 发明申请

US20170213689A1 CHARGED PARTICLE BEAM LENS APPARATUS, CHARGED PARTICLE BEAM COLUMN, AND CHARGED PARTICLE BEAM EXPOSURE APPARATUS 审中-公开
公开(公告)号：US20170213689A1
公开(公告)日：2017-07-27
申请号：US15335448
申请日：2016-10-27
申请人： ADVANTEST CORPORATION
发明人： Tomohiko ABE , Shinichi KOJIMA
IPC分类号： H01J37/14 , H01J37/317
CPC分类号： H01J37/14 , H01J37/141 , H01J37/3174 , H01J2237/002 , H01J2237/20285 , H01J2237/31774
摘要： Provided is a charged particle beam lens apparatus having a small size and high resolution, and a charged particle beam column and a charged particle beam exposure apparatus.A charged particle beam lens apparatus includes a lens unit positioned around a through hole through which a charged particle beam travels, where the lens unit is configured to converge or diffuse the charged particle beam, and a supporting unit surrounding the lens unit. Here, at least one of an outer peripheral portion of the lens unit that is in contact with the supporting unit and an inner peripheral portion of the supporting unit that is in contact with the lens unit includes a groove through which a coolant fluid flows along an outer periphery of the lens unit.In this way, the charged particle beam lens apparatus can achieve a small size and high resolution.

42. 发明授权

US09704691B2 Plasma generator 有权
公开(公告)号：US09704691B2
公开(公告)日：2017-07-11
申请号：US14396361
申请日：2013-03-28
申请人： Evgenij Vladimirovich Berlin , Vasily Juryevich Grigoryev
发明人： Evgenij Vladimirovich Berlin , Vasily Juryevich Grigoryev
IPC分类号： C23C16/50 , H01J37/32 , H01J37/04
CPC分类号： H01J37/3211 , H01J37/04 , H01J37/321 , H01J2237/002 , H01J2237/036
摘要： The invention relates to devices intended for treatment of materials in gas discharge plasma of low temperature, namely the induction plasma generator, placed inside the process volume (working chamber). The technical problem to be solved by the proposed invention is to increase the efficiency of the device; to improve the reliability of the device, increase purity of plasma environment and increase density of plasma generated; increase the life of device; reduce the level of noise; reduce the size of the device.

43. 发明授权

US09703213B2 Substrate processing apparatus 有权
公开(公告)号：US09703213B2
公开(公告)日：2017-07-11
申请号：US14342542
申请日：2012-09-12
申请人： Jerry Johannes Martinus Peijster , Diederik Geert Femme Verbeek
发明人： Jerry Johannes Martinus Peijster , Diederik Geert Femme Verbeek
IPC分类号： G03B27/52 , G03F7/20 , H01J37/02 , H01J37/317 , B82Y10/00 , B82Y40/00
CPC分类号： G03F7/70891 , B82Y10/00 , B82Y40/00 , G03F7/709 , H01J37/02 , H01J37/3177 , H01J2237/002 , H01J2237/0216 , H01J2237/28
摘要： The invention relates to a substrate processing apparatus (10) comprising a support frame (60), a radiation projection system (20) for projecting radiation onto a substrate to be processed, a substrate support structure (30) for supporting the substrate, and a fluid transfer system (150). The radiation projection system comprises a cooling arrangement (130) and is supported by and vibrationally decoupled from the support frame such that vibrations of the support frame above a predetermined maximum frequency are substantially decoupled from the radiation projection system. The fluid transfer system comprises at least one tube (140) fixed at two points (151,152), and comprises a flexible portion. A substantial part of the flexible portion extends over a plane substantially parallel to the substrate support structure surface. The stiffness of the flexible portion is adapted to substantially decouple vibrations at the second fixed point which are above the predetermined maximum frequency from the first fixed point.

44. 发明申请

US20170178857A1 Temperature Controlled Ion Source 有权
公开(公告)号：US20170178857A1
公开(公告)日：2017-06-22
申请号：US14977720
申请日：2015-12-22
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Scott C. Holden , Bon-Woong Koo , Brant S. Binns , Richard M. White , Kenneth L. Starks , Eric R. Cobb
IPC分类号： H01J37/30 , H01J37/317 , H01J37/08
CPC分类号： H01J37/3002 , H01J37/08 , H01J37/3171 , H01J2237/002
摘要： An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.

45. 发明授权

US09640361B2 Emitter structure, gas ion source and focused ion beam system 有权
公开(公告)号：US09640361B2
公开(公告)日：2017-05-02
申请号：US14830106
申请日：2015-08-19
申请人： HITACHI HIGH-TECH SCIENCE CORPORATION
发明人： Anto Yasaka , Yasuhiko Sugiyama , Hiroshi Oba
IPC分类号： G21K5/04 , H01J27/26 , H01J37/08 , H01J1/15 , H01J27/02 , H01J1/18 , H01J3/04
CPC分类号： H01J27/26 , H01J1/15 , H01J1/18 , H01J3/04 , H01J27/024 , H01J37/08 , H01J2237/002 , H01J2237/06316
摘要： A focused ion beam system includes a gas ion source and an emitter structure. The emitter structure includes a pair of conductive pins fixed to a base member, a filament connected between the pair of conductive pins, and an emitter which has a tip end with one atom or three atoms and which is connected to the filament. A supporting member is fixed to the base material, and the emitter is connected to the supporting member.

46. 发明申请

US20170092463A1 WAFER MANUFACTURING SYSTEM AND RELATED PROCESS 审中-公开
公开(公告)号：US20170092463A1
公开(公告)日：2017-03-30
申请号：US15376455
申请日：2016-12-12
申请人： Rayton Solar Inc.
发明人： Andrew X. Yakub , James Benjamin Rosenzweig , Mark Stanley Goorsky
IPC分类号： H01J37/31 , H01J37/20 , H01J37/305
CPC分类号： H01J37/31 , B28D5/00 , C30B13/24 , C30B29/06 , C30B29/64 , C30B33/06 , H01J37/20 , H01J37/305 , H01J2237/002 , H01L31/1804 , H01L31/184 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10T117/1088
摘要： The process for manufacturing a semiconductor wafer includes steps for mounting a semiconductor work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the semiconductor work piece, exfoliating the outer surface layer of the semiconductor work piece with the energized beam, and removing the exfoliated outer surface layer from the semiconductor work piece as the semiconductor wafer having a thickness less than 100 micrometers.

47. 发明申请

US20170069470A1 UPPER ELECTRODE STRUCTURE OF PLASMA PROCESSING APPARATUS, PLASMA PROCESSING APPARATUS, AND OPERATION METHOD THEREFOR 审中-公开
标题翻译：等离子体加工装置的上电极结构，等离子体处理装置及其操作方法
公开(公告)号：US20170069470A1
公开(公告)日：2017-03-09
申请号：US15303274
申请日：2015-04-28
申请人： Tokyo Electron Limited
发明人： Koichi Murakami , Michishige Saito , Keita Kambara , Kenji Nagai
IPC分类号： H01J37/32
CPC分类号： H01J37/32541 , H01J37/32091 , H01J37/32183 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32532 , H01J2237/002
摘要： An upper electrode structure includes a first plate, a second plate and an electrostatic attraction unit. The first plate has a first region, a second region and a third region which are concentrically arranged. Each of the regions is provided with a multiple number of gas discharge openings. The electrostatic attraction unit is provided between the first plate and the second plate and is configured to attract the first plate. The electrostatic attraction unit is equipped with a first to third heaters for the first to third regions. The electrostatic attraction unit and the second plate provide a first supply path, a second supply path and a third supply path through which gases are supplied into the first to third regions, respectively. A first gas diffusion space, a second gas diffusion space and a third gas diffusion space are formed in the electrostatic attraction unit.
摘要翻译：上电极结构包括第一板，第二板和静电吸引单元。第一板具有同心配置的第一区域，第二区域和第三区域。每个区域设置有多个气体排出口。静电吸引单元设置在第一板和第二板之间，并且被配置为吸引第一板。静电吸引单元配备有用于第一至第三区域的第一至第三加热器。静电吸引单元和第二板提供分别向第一至第三区域供应气体的第一供应路径，第二供应路径和第三供应路径。在静电吸引单元中形成第一气体扩散空间，第二气体扩散空间和第三气体扩散空间。

48. 发明授权

US09558912B2 Ion milling device 有权
标题翻译：离子铣削装置
公开(公告)号：US09558912B2
公开(公告)日：2017-01-31
申请号：US14890936
申请日：2014-04-28
申请人： Hitachi High-Technologies Corporation
发明人： Asako Kaneko , Hisayuki Takasu , Hirobumi Mutou , Toru Iwaya , Mami Konomi
IPC分类号： H01J37/20 , H01J37/305 , H01J37/302 , G01K1/14 , G01N1/32 , H01J37/30
CPC分类号： H01J37/20 , G01K1/14 , G01N1/32 , H01J37/30 , H01J37/3002 , H01J37/3023 , H01J37/3053 , H01J2237/002 , H01J2237/026 , H01J2237/08 , H01J2237/2001 , H01J2237/2007 , H01J2237/20271 , H01J2237/20285 , H01J2237/317
摘要： The present invention aims at providing an ion milling apparatus for emitting an ion beam to a sample to process the sample and capable of controlling the temperature of the sample with high accuracy regardless of deformation or the like of the sample being irradiated with the ion beam, and proposes an ion milling apparatus including at least one of a shield holding member for supporting a shield for shielding the sample from the ion beam while exposing a part of the sample to the ion beam; a shifting mechanism for shifting a surface of the sample stand in contact with the sample following deformation of the sample during irradiation with the ion beam, the shifting mechanism having a temperature control mechanism for controlling temperature of at least one of the shield holding member and the sample stand; and a sample holding member disposed between the shield and the sample, the sample holding member deforming following deformation of the sample during irradiation with the ion beam, for example.
摘要翻译：本发明的目的在于提供一种离子铣削装置，用于将离子束发射到样品以处理样品并且能够高精度地控制样品的温度，而不管样品被离子束照射的变形等，并提出了一种离子铣削装置，其包括屏蔽保持构件中的至少一个，用于支撑用于将样品从离子束屏蔽的屏蔽，同时将一部分样品暴露于离子束; 移动机构，用于使样品台的表面在与离子束照射期间发生变形之后与试样接触而移动，所述移动机构具有温度控制机构，用于控制至少一个屏蔽保持部件和样品台以及设置在所述屏蔽体和所述试样之间的样品保持部件，所述样品保持部件例如在用所述离子束照射时，随着所述样品的变形而发生变形。

49. 发明授权

US09530656B2 Temperature control in RF chamber with heater and air amplifier 有权
标题翻译：带加热器和空气放大器的RF室中的温度控制
公开(公告)号：US09530656B2
公开(公告)日：2016-12-27
申请号：US13851793
申请日：2013-03-27
申请人： Lam Research Corporation
发明人： Jon McChesney , Alex Paterson
IPC分类号： H01L21/306 , C23C16/00 , H01L21/3065 , H01J37/32
CPC分类号： H01J37/32522 , H01J37/32082 , H01J37/3211 , H01J37/32119 , H01J37/32238 , H01J2237/002 , H01J2237/334 , H01L21/3065
摘要： Systems, methods, and computer programs are presented for controlling the temperature of a window in a semiconductor manufacturing chamber. One apparatus includes an air amplifier, a plenum, a heater, a temperature sensor, and a controller. The air amplifier is coupled to pressurized gas and generates, when activated, a flow of air. The air amplifier is also coupled to the plenum and the heater. The plenum receives the flow of air and distributes the flow of air over a window of the plasma chamber. When the heater is activated, the flow of air is heated during processing, and when the heater is not activated, the flow of air cools the window. The temperature sensor is situated about the window of the plasma chamber, and the controller is defined to activate both the air amplifier and the heater based on a temperature measured by the temperature sensor.
摘要翻译：提出了用于控制半导体制造室中的窗口的温度的系统，方法和计算机程序。一种装置包括空气放大器，增压室，加热器，温度传感器和控制器。空气放大器耦合到加压气体，并在被激活时产生空气流。空气放大器还连接到增压室和加热器。增压室接收空气流并将空气流分配在等离子体室的窗口上。当加热器被激活时，在加工期间空气的流动被加热，并且当加热器未被激活时，空气的流动冷却窗口。温度传感器位于等离子体室的窗口周围，并且控制器被定义为基于由温度传感器测量的温度来激活空气放大器和加热器。

50. 发明授权

US09520204B2 Cold stripper for high energy ion implanter with tandem accelerator 有权
标题翻译：带有串联加速器的高能离子注入机的冷拔机
公开(公告)号：US09520204B2
公开(公告)日：2016-12-13
申请号：US14140893
申请日：2013-12-26
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Shengwu Chang
IPC分类号： H01J23/00 , G21K1/14 , H05H5/06 , H01J37/317 , H01L21/265 , H05H7/08
CPC分类号： G21K1/14 , H01J37/3171 , H01J2237/002 , H01J2237/0048 , H01J2237/047 , H01J2237/061 , H01J2237/082 , H01L21/265 , H05H5/063 , H05H2007/088
摘要： A cold stripper for a high-energy ion implanter system is provided. The cold stripper including a stripper tube having a hollow cavity, a first aperture in the stripper tube to admit an ion beam of positively charged ions into the hollow cavity and a second aperture in the stripper tube to discharge the ion beam from the hollow cavity, a gas pump coupled to the hollow cavity to introduce a gas into the hollow cavity, one or more cooling passages in the stripper tube, and a coolant pump coupled to the one or more cooling passages to circulate a coolant through the one or more cooling passages.
摘要翻译：提供了一种用于高能离子注入机系统的冷汽提器。所述冷汽提器包括具有中空腔的汽提管，所述汽提管中的第一孔，用于允许带正电荷的离子的离子束进入所述中空腔，并且所述汽提管中的第二孔用于从所述中空腔排出离子束，耦合到所述中空腔的气泵以将气体引入所述中空腔，所述汽提管中的一个或多个冷却通道和联接到所述一个或多个冷却通道的冷却剂泵，以使冷却剂循环通过所述一个或多个冷却通道。

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