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41. 发明申请

US20100060141A1 ELECTRON BEAM DEVICE AND IMAGE DISPLAY APPARATUS USING THE SAME 审中-公开
标题翻译：电子束装置和使用其的图像显示装置
公开(公告)号：US20100060141A1
公开(公告)日：2010-03-11
申请号：US12553727
申请日：2009-09-03
申请人： Ouichi Kubota , Noritake Suzuki , Hideshi Kawasaki , Tamaki Kobayashi , Toshihiko Takeda
发明人： Ouichi Kubota , Noritake Suzuki , Hideshi Kawasaki , Tamaki Kobayashi , Toshihiko Takeda
IPC分类号： H01J1/62 , H01J1/02
CPC分类号： H01J1/316 , H01J1/3046 , H01J31/127 , H01J2201/30423 , H01J2201/3165 , H01J2329/0423 , H01J2329/0489
摘要： In an electron beam device employing an electron-emitting device in which a gate and a cathode are provided to sandwich a recess portion formed on an insulating member, electrons are scattered after the collision against the gate and then extracted, it is made possible to easily obtain stable electron emission characteristics and also to prevent the electron-emitting device from being deteriorated or being fractured due to overheating even when an excessive heat has been generated. The electron-emitting device includes the cathode having a protrusion 30 positioned astride the outer surface of the insulating member and the inner surface of the recess portion formed in the insulating member, and the gate including a layered structure of at least two electroconductive layers. A thermal expansion coefficient of the electroconductive layer which is arranged at a part facing to the protrusion is larger than that of the other electroconductive layer.
摘要翻译：在使用电子发射器件的电子束器件中，其中设置有栅极和阴极以夹着形成在绝缘构件上的凹陷区域，电子在撞击栅极之后被散射，然后被抽出，使得可以容易地获得稳定的电子发射特性，并且即使当产生过多的热量时也防止电子发射器件由于过热而劣化或断裂。电子发射器件包括阴极，其具有跨过绝缘构件的外表面的突起30和形成在绝缘构件中的凹部的内表面，并且栅极包括至少两个导电层的层叠结构。布置在面向突起的部分处的导电层的热膨胀系数大于另一导电层的热膨胀系数。

42. 发明申请

US20080095315A1 Method of operating and process for fabricating an electron source 失效
公开(公告)号：US20080095315A1
公开(公告)日：2008-04-24
申请号：US12001631
申请日：2007-12-12
申请人： Heinz Busta
发明人： Heinz Busta
IPC分类号： H01J35/32 , H01J9/02
CPC分类号： H01J1/3042 , H01J1/3046 , H01J9/025 , H01J35/065 , H01J2201/30403 , H01J2201/30423
摘要： A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.

43. 发明授权

US07067971B2 Field emission element 失效
标题翻译：场发射元件
公开(公告)号：US07067971B2
公开(公告)日：2006-06-27
申请号：US10900124
申请日：2004-07-28
申请人： Masateru Taniguchi , Manabu Kitada , Kazuhito Nakamura , Satoru Kawata
发明人： Masateru Taniguchi , Manabu Kitada , Kazuhito Nakamura , Satoru Kawata
IPC分类号： H01J1/62
CPC分类号： H01J1/3046 , H01J29/04 , H01J31/127 , H01J2201/30423
摘要： A field emission element has a gate electrode stacked on a substrate, an emitter electrode stacked on the gate electrode via an interlayer insulating layer, and an anode electrode formed on another substrate facing the emitter electrode. Further, the field emission element includes an anode pixel formed by the anode electrode and a generally rectangular fluorescent body formed thereon and a plurality of wells, each being formed in the emitter electrode and the interlayer insulating layer in a form of a narrow elongated hole. Here, the wells are disposed within a generally rectangular electron emitting area and at least a majority of the wells are arranged parallel to each other, and a length direction of the majority of the wells is substantially normal to that of the fluorescent body and the electron emitting area.
摘要翻译：场致发射元件具有层叠在基板上的栅电极，经由层间绝缘层堆叠在栅电极上的发射极，以及在与发射电极相对的另一基板上形成的阳极电极。此外，场发射元件包括由阳极电极和形成在其上的大致矩形的荧光体形成的阳极像素和多个阱，每个阱形成在狭长的细长孔的发射电极和层间绝缘层中。这里，阱设置在大致矩形的电子发射区域内，并且至少大部分阱彼此平行地布置，并且大部分阱的长度方向基本上与荧光体和电子的长度方向垂直发射区域。

44. 发明授权

US06590322B2 Low gate current field emitter cell and array with vertical thin-film-edge emitter 失效
公开(公告)号：US06590322B2
公开(公告)日：2003-07-08
申请号：US10012615
申请日：2001-12-12
申请人： David S. Y. Hsu
发明人： David S. Y. Hsu
IPC分类号： H01J113
CPC分类号： B82Y30/00 , B82Y10/00 , H01J1/304 , H01J1/3046 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2201/319
摘要： A field emitter cell includes a thin-film-edge emitter normal to the gate layer. The field emitter cell may include a conductive substrate layer, an insulator layer having a perforation, a gate layer having a perforation, an emitter layer, and other optional layers. The perforation in the gate layer is larger and concentrically offset with respect to the perforation in the insulating layer and may be of a tapered construction. Alternatively, the perforation in the gate layer may be coincident with, or larger or smaller than, the perforation in the insulating layer, provided that the gate layer is shielded from the emitter from a direct line-of-sight by a nonconducting standoff layer. Optionally, the thin-film-edge emitter may include incorporated nanofilaments. The field emitter cell has low gate current, making it useful for various applications such as field emitter displays, high voltage power switching, microwave, RF amplification and other applications that require high emission currents.

45. 发明申请

US20020149322A1 Field-emission matrix display based on electron reflections 有权
标题翻译：基于电子反射的场发射矩阵显示
公开(公告)号：US20020149322A1
公开(公告)日：2002-10-17
申请号：US10102450
申请日：2002-03-20
发明人： Alexander Kastalsky , Sergey Shokhor , Frank J. DiSanto , Denis A. Krusos , Boris Gorfinkel , Nikolai Abanshin
IPC分类号： G09G003/10
CPC分类号： H01J9/025 , H01J1/3046 , H01J31/127 , H01J2201/30423
摘要： A Reflective Field Emission Display (FED) system using reflective field emission pixel elements is disclosed. In the FED system disclosed, each pixel elements is composed of at least one edge emitter that is operable to emit electrons and at least one reflector that is operable to first attract and then reflect the emitted electrons onto a transparent layer that is operable to attract the reflected electrons. The transparent anode layer is oppositely positioned with respect to the cathode or emitter edge. In a one aspect of the invention, a phosphor layer interposed between the transparent layer and the pixel element produces a light photon as reflected electrons are attracted to the transparent layer. In another aspect of the invention, a plurality of phosphor layers are applied to the transparent layer to produce a color display when reflected electrons are attracted to the transparent layer.
摘要翻译：公开了使用反射场发射像素元件的反射场发射显示（FED）系统。在所公开的FED系统中，每个像素元件由可操作以发射电子的至少一个边缘发射器和至少一个反射器组成，该至少一个反射器可操作以首先吸引然后将发射的电子反射到透明层上，该透明层可操作以吸引反射电子。透明阳极层相对于阴极或发射极边缘相对定位。在本发明的一个方面中，当反射的电子被透明层吸引时，介于透明层和像素元件之间的磷光体层产生光子。在本发明的另一方面，当反射电子被吸引到透明层时，多个磷光体层被施加到透明层以产生彩色显示。

46. 发明授权

US09805900B1 Two-dimensional graphene cold cathode, anode, and grid 有权
公开(公告)号：US09805900B1
公开(公告)日：2017-10-31
申请号：US15145955
申请日：2016-05-04
申请人： Lockheed Martin Corporation
发明人： David Glen Findley
IPC分类号： H01J1/316 , H01J1/304 , H01J9/02 , B05D1/00
CPC分类号： H01J1/3042 , B05D1/005 , B05D2203/30 , H01J1/3046 , H01J1/3048 , H01J1/48 , H01J9/025 , H01J21/105 , H01J2201/30469
摘要： In an embodiment, a method includes forming a first diamond layer on a substrate and inducing a layer of graphene from the first diamond layer by heating the substrate and the first diamond layer. The method includes forming a second diamond layer on top of the layer of graphene and applying a mask to the second diamond layer. The mask includes a shape of a cathode, an anode, and one or more grids. The method further includes forming a two-dimensional cold cathode, a two-dimensional anode, and one or more two-dimensional grids by reactive-ion electron-beam etching. Each of the two-dimensional cold cathode, the two-dimensional anode, and the one or more two-dimensional grids includes a portion of the first diamond layer, the graphene layer, and the second diamond layer such that the graphene layer is positioned between the first diamond layer and the second diamond layer.

47. 发明授权

US09793083B2 Microstructured surface with low work function 有权
公开(公告)号：US09793083B2
公开(公告)日：2017-10-17
申请号：US15396701
申请日：2017-01-02
申请人： Elwha LLC
发明人： Roderick A. Hyde , Jordin T. Kare , Tony S. Pan , Lowell L. Wood, Jr.
IPC分类号： H01L29/06 , H01J19/24 , H01J9/02 , H01J9/18
CPC分类号： H01J19/24 , H01J1/304 , H01J1/3046 , H01J1/308 , H01J9/025 , H01J9/18 , H01J2209/0223
摘要： A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each multilayer structure is configured to produce a 2-dimensional electron gas at a junction between two layers within the structure. The emitter also includes an exposed surface intersecting the 2-dimensional electron gas of each of the plurality of vertically-stacked multilayer structures to form a plurality of effectively one-dimensional horizontal line sources of electron emission.

48. 发明申请

US20170243712A1 ELECTRON EMISSION DEVICE AND TRANSISTOR PROVIDED WITH THE SAME 有权
公开(公告)号：US20170243712A1
公开(公告)日：2017-08-24
申请号：US15503539
申请日：2015-10-02
申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
发明人： Tsuyoshi ISHIKAWA , Takashi KATSUNO , Narumasa SOEJIMA
IPC分类号： H01J29/48
CPC分类号： H01J29/481 , H01J1/304 , H01J1/3046 , H01J1/34 , H01J1/35 , H01S3/1636
摘要： An electron emission device includes a substrate and an electron emission layer. The electron emission layer is provided above the substrate, and is provided with an opening. The electron emission layer has an edge defining the opening and is configured to emit electrons from the edge when the edge is irradiated with light.

49. 发明授权

US09331189B2 Low voltage nanoscale vacuum electronic devices 有权
标题翻译：低电压纳米级真空电子器件
公开(公告)号：US09331189B2
公开(公告)日：2016-05-03
申请号：US13888493
申请日：2013-05-07
申请人： UNIVERSITY OF PITTSBURGH—OF THE COMMONWEALTH SYSTEM OF HIGHER EDUCATION
发明人： Hong Koo Kim , Siwapon Srisonphan
IPC分类号： H01L29/92 , H01L29/76 , H01L29/66 , H01L29/94 , H01L31/06 , H01L31/062 , H01L31/08 , H01L31/113 , H01L27/144 , H01J3/02 , H01J1/304
CPC分类号： H01J1/3046 , H01J1/3042 , H01J3/022 , H01J19/24 , H01J2201/30423 , H01L27/1446 , H01L27/146 , H01L29/66181 , H01L29/66439 , H01L29/7613 , H01L29/94 , H01L31/022466 , H01L31/06 , H01L31/062 , H01L31/08 , H01L31/101 , H01L31/113 , Y02E10/50
摘要： An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.
摘要翻译：一种电子器件，包括设置在导电层之间的第一导电层，第二导电层和绝缘层。至少一个侧壁从第一导电层延伸到第二导电层，并且包括第一导电层，第二导电层和绝缘层的至少一部分。在第一和第二导电层之间施加偏置电压，其中响应于偏置电压，至少在第一导电层和第二导电层中的至少一个中引入二维电子系统，并且其中来自二维电子由于库仑排斥的结果，侧壁侧壁从第一导电层和第二导电层中的一个向空气移动，导致第一导电层和第二导电层中的另一个。

50. 发明授权

US09324534B2 Cold field electron emitters based on silicon carbide structures 有权
标题翻译：基于碳化硅结构的冷场电子发射体
公开(公告)号：US09324534B2
公开(公告)日：2016-04-26
申请号：US14518253
申请日：2014-10-20
申请人： THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
发明人： Fred Sharifi , Myung-Gyu Kang , Henri Lezec
IPC分类号： H01J9/00 , H01J1/304 , C25F3/02 , H01J9/02 , B82Y30/00 , B82Y40/00 , B82Y99/00
CPC分类号： H01J1/3044 , B82Y30/00 , B82Y40/00 , B82Y99/00 , C25F3/02 , H01J1/304 , H01J1/3046 , H01J9/022 , H01J9/025 , H01J2201/3048 , H01J2201/30484 , Y10S977/814 , Y10S977/888 , Y10S977/939
摘要： A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
摘要翻译：描述了能够以与热源相当的水平发射的冷阴极场致发射电子源。在宏观发射极阵列中证明了在7.5V /μm下超过6A / cm 2的发射。发射器具有均匀分布的发射位点的单片和刚性多孔半导体纳米结构，并且通过允许控制发射特性的室温工艺制造。这些电子源可用于广泛的应用，包括微波电子学和医学和安全性的x射线成像。

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