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41. 发明申请

US20150243308A1 MAGNETIC RECORDING AND REPRODUCING DEVICE 有权
标题翻译：磁记录和再现设备
公开(公告)号：US20150243308A1
公开(公告)日：2015-08-27
申请号：US14627003
申请日：2015-02-20
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Masayuki TAKAGISHI , Hitoshi IWASAKI , Kenichiro YAMADA , Yousuke ISOWAKI , Kohsuke HARADA
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G11B5/11 , G11B5/3909 , G11B2005/3996
摘要： According to one embodiment, a magnetic recording and reproducing device includes magnetic recording medium and a magnetic head. The magnetic recording medium includes a first surface. A plurality of bits is provided in the first surface. Each of the bits has a direction of magnetization corresponding to recorded information. The magnetic head includes a reproducing unit. The reproducing unit senses the direction of magnetization. The reproducing unit includes a first shield, a second shield, a first magnetic layer, a second magnetic layer, a third magnetic layer, a fourth magnetic layer, an intermediate layer, a first nonmagnetic layer, and a second nonmagnetic layer. The first and the second nonmagnetic layers include at least one selected from ruthenium, copper, and tantalum. A distance between the first shield and the second shield is not less than 3 times and not more than 7 times a length of each of the bits.
摘要翻译：根据一个实施例，磁记录和再现装置包括磁记录介质和磁头。磁记录介质包括第一表面。在第一表面中提供多个位。每个位具有对应于记录信息的磁化方向。磁头包括再现单元。再现单元感测磁化方向。再现单元包括第一屏蔽，第二屏蔽，第一磁性层，第二磁性层，第三磁性层，第四磁性层，中间层，第一非磁性层和第二非磁性层。第一和第二非磁性层包括选自钌，铜和钽中的至少一种。第一屏蔽和第二屏蔽之间的距离不小于每个位的长度的3倍且不超过7倍。

42. 发明授权

US09117465B2 Non-local spin valve element with three terminals, hard disk head, and magnetic recording and reproducing apparatus 有权
标题翻译：具有三个端子，硬盘头和磁记录和再现装置的非局部自旋阀元件
公开(公告)号：US09117465B2
公开(公告)日：2015-08-25
申请号：US14338481
申请日：2014-07-23
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yuuzo Kamiguchi , Satoshi Shirotori , Shinobu Sugimura , Masayuki Takagishi , Hitoshi Iwasaki
IPC分类号： G11B5/39 , G11B5/35 , H01F10/08 , G01R33/09 , G01R33/12
CPC分类号： G11B5/35 , G01R33/093 , G01R33/098 , G01R33/1284 , G11B5/3909 , G11B2005/3996 , H01F10/08 , H01F10/1936 , H01F10/3254
摘要： A spin valve element according to an embodiment includes: a nonmagnetic base layer; a first terminal including a first magnetic layer connecting to a portion near one of opposing end faces of the nonmagnetic base layer; a second terminal including a second magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at a distance from the first terminal; a third terminal including a third magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at distances from the first and second terminals, the second terminal and the third terminal connecting to a current source that passes a sense current, and the first terminal and one of the second terminal and the third terminal connecting to a voltage detection unit that detects a voltage.
摘要翻译：根据实施例的自旋阀元件包括：非磁性基底层; 第一端子，包括连接到非磁性基底层的相对端面中的一个附近的部分的第一磁性层; 第二端子，包括设置并连接到所述非磁性基底层以与所述第一端子相距一定距离的第二磁性层; 第三端子，包括设置并连接到非磁性基底层的第三磁性层，以便与第一和第二端子相距一定距离，第二端子和第三端子连接到通过感测电流的电流源，第一端子并且连接到检测电压的电压检测单元的第二端子和第三端子之一。

43. 发明申请

US20150221328A1 MAGNETIC READ SENSOR WITH BAR SHAPED AFM AND PINNED LAYER STRUCTURE AND SOFT MAGNETIC BIAS ALIGNED WITH FREE LAYER 审中-公开
标题翻译：磁性读取传感器，带有形状的AFM和PINNED层结构和软磁性偏置与自由层对齐
公开(公告)号：US20150221328A1
公开(公告)日：2015-08-06
申请号：US14170495
申请日：2014-01-31
申请人： HGST Netherlands B.V.
发明人： Quang Le , Simon H. Liao , Guangli Liu , Stefan Maat , Shuxia Wang
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , G01R33/098 , G11B5/3163 , G11B5/398 , G11B2005/3996
摘要： A magnetic sensor having a structure that optimizes magnetic pinning strength and magnetic free layer stability. The sensor includes a sensor stack having a magnetic free layer that extends to a first stripe height and a pinned layer that extends beyond the first stripe height to a second stripe height. Magnetic bias structures are formed at the sides of the free layer and are each formed upon a non-magnetic fill layer that raises the bias layer to the level of the free layer, the non-magnetic fill layer being at the level of the pinned layer in the sensor stack. The fill layer allows the free layer stripe height to be defined in a partial mill process while allowing the pinned layer to extend beyond the free layer stripe height and also advantageously allows the bias layers to have a stripe height that is aligned with the free layer stripe height.
摘要翻译：具有优化磁性钉扎强度和磁自由层稳定性的结构的磁传感器。传感器包括具有延伸到第一条带高度的无磁性层和延伸超过第一条纹高度至第二条纹高度的钉扎层的传感器堆叠。磁偏置结构形成在自由层的侧面，并且各自形成在非磁性填充层上，该非磁性填充层将偏置层升高到自由层的高度，非磁性填充层处于被钉扎层的水平在传感器堆栈中。填充层允许在部分研磨过程中限定自由层条纹高度，同时允许钉扎层延伸超过自由层条纹高度，并且还有利地允许偏置层具有与自由层条纹对准的条纹高度高度。

44. 发明授权

US09099123B1 Magnetic sensor having optimal free layer back edge shape and extended pinned layer 有权
标题翻译：磁传感器具有最佳的自由层后边缘形状和延伸的钉扎层
公开(公告)号：US09099123B1
公开(公告)日：2015-08-04
申请号：US14178179
申请日：2014-02-11
申请人： HGST Netherlands B.V.
发明人： Takashi Wagatsuma , Yukimasa Okada , Katsumi Hoshino , Kouji Kataoka
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , G11B5/3909 , G11B5/398 , G11B5/6082 , G11B2005/3996
摘要： A magnetic read sensor having an extended pinned layer and having a free layer structure with a back edge formed at an angle for optimizing sensor performance and pinned layer pinning. The magnetic free layer has a back edge that is formed at an angle of between 6 and 10 degrees relative to a plane parallel with the air bearing surface plane. The magnetic sensor can be formed by forming the free layer stripe height with an ion milling that is performed at an angle of 6 to 10 degrees relative to normal.
摘要翻译：磁读取传感器，其具有延伸的被钉扎层并且具有自由层结构，其具有以一定角度形成的后边缘，以优化传感器性能和固定层钉扎。磁性层具有相对于与空气支承面平面平行的平面以6度至10度的角度形成的后缘。磁性传感器可以通过用相对于法线以6至10度的角度执行的离子铣削形成自由层条纹高度而形成。

45. 发明授权

US09099121B2 Current-perpendicular-to-plane magnetoresistive read sensor with grooved contact and free layers 有权
标题翻译：电流垂直于平面的磁阻读取传感器，带有沟槽接触和自由层
公开(公告)号：US09099121B2
公开(公告)日：2015-08-04
申请号：US14293199
申请日：2014-06-02
申请人： International Business Machines Corporation
发明人： Giovanni Cherubini , Simeon Furrer , Jens Jelitto , Mark A. Lantz
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , G11B5/3909 , G11B5/3912 , G11B5/3929 , G11B5/3948 , G11B5/3958 , G11B2005/3996 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129
摘要： A current-perpendicular-to-plane magnetoresistive read sensor includes a stack of layers extending along a stacking direction, and an edge surface parallel to the stacking direction that forms at least part of a bearing surface of the read sensor, the bearing surface designed to face a recording medium. The stack of layers includes a first contact layer, a ferromagnetic free layer whose magnetic orientation varies according to an applied magnetic field, above the first contact layer, a non-magnetic layer above the ferromagnetic layer, a ferromagnetic spin injection layer above the non-magnetic layer, and a second contact layer above the spin injection layer, such that a current can flow between the second contact layer and the first contact layer along a current-perpendicular-to-plane direction, parallel to the stacking direction. The stack of layers further includes a series of structures extending along a direction parallel to the bearing surface and perpendicular to the stacking direction.
摘要翻译：电流垂直于平面的磁阻读取传感器包括沿堆叠方向延伸的层叠层，以及平行于层叠方向的边缘表面，其形成读取传感器的支承表面的至少一部分，该轴承表面被设计为面对记录介质。层叠层包括第一接触层，铁磁自由层，其磁取向根据所施加的磁场而变化，在第一接触层上方，铁磁层上方的非磁性层，非磁性层上方的铁磁自旋注入层，磁性层和自旋注入层上方的第二接触层，使得电流可以沿平行于堆叠方向的电流垂直于平面的方向在第二接触层和第一接触层之间流动。层叠层还包括沿着平行于支承表面并垂直于层叠方向的方向延伸的一系列结构。

46. 发明授权

US09087527B1 Apparatus and method for middle shield connection in magnetic recording transducers 有权
标题翻译：磁记录传感器中屏蔽连接的装置和方法
公开(公告)号：US09087527B1
公开(公告)日：2015-07-21
申请号：US14526335
申请日：2014-10-28
申请人： Western Digital (Fremont), LLC
发明人： Shaoping Li , Steven C. Rudy , Gerardo A. Bertero , Yunfei Ding , Christopher L. Beaudry
IPC分类号： G11B5/187 , G11B5/33
CPC分类号： G11B5/02 , G11B5/11 , G11B5/3909 , G11B5/3912 , G11B5/3958 , G11B5/4886 , G11B2005/3996
摘要： A read transducer having a first read sensor, a second read sensor, and a first middle shield is provided. The second read sensor is disposed in a down track direction from the first read sensor. The first middle shield is disposed between the first read sensor and the second read sensor. The first middle shield includes a first metallic middle shield layer disposed between the first read sensor and the second read sensor, a second metallic middle shield layer disposed between the first metallic middle shield layer and the second read sensor, and a first magnetic-spacer layer disposed between the first metallic middle shield layer and the second metallic middle shield layer. The first metallic middle shield layer and the second metallic middle shield layer have substantially the same polarity.
摘要翻译：提供具有第一读取传感器，第二读取传感器和第一中间屏蔽的读取传感器。第二读取传感器沿着第一读取传感器的向下的轨道方向设置。第一中间屏蔽设置在第一读取传感器和第二读取传感器之间。第一中间屏蔽包括设置在第一读取传感器和第二读取传感器之间的第一金属中间屏蔽层，设置在第一金属中间屏蔽层和第二读取传感器之间的第二金属中间屏蔽层，以及第一磁性间隔层设置在第一金属中间屏蔽层和第二金属中间屏蔽层之间。第一金属中间屏蔽层和第二金属中间屏蔽层具有大致相同的极性。

47. 发明授权

US09087525B2 Layered synthetic anti-ferromagnetic upper shield 有权
标题翻译：分层合成反铁磁上护罩
公开(公告)号：US09087525B2
公开(公告)日：2015-07-21
申请号：US14067456
申请日：2013-10-30
申请人： Seagate Technology LLC
发明人： Zhengqi Lu , Daniel Hassett , Paula McElhinney , Jiansheng Xu
IPC分类号： G11B5/11 , G11B5/33
CPC分类号： G11B5/11 , G11B5/33 , G11B5/3909 , G11B5/3912 , G11B2005/3996
摘要： A magneto-resistive (MR) sensor may include a variety of individual functional layers whereby an electrical resistance throughout the layers of the sensor stack varies according to the polarity of a pinned layer within the sensor stack. A layered synthetic anti-ferromagnetic (SAF) upper shield of the MR sensor includes an upper SAF layer and a lower SAF layer separated by a shield anti-ferromagnetic (AFM) layer. The lower SAF layer is in contact with a side shield of the MR sensor, which provides a side shield biasing field to the MR sensor. The upper SAF layer separates the lower SAF layer from a top shield and/or domain control structure (DCS) magnet(s) of the MR sensor and shields the lower SAF layer and the sensor stack from DCS stray field(s), thereby reducing noise.
摘要翻译：磁阻（MR）传感器可以包括各种单独的功能层，由此传感器堆叠的各层的电阻根据传感器堆叠内的被钉扎层的极性而变化。 MR传感器的分层合成反铁磁（SAF）上屏蔽包括由屏蔽反铁磁（AFM）层隔开的上SAF层和下SAF层。较低的SAF层与MR传感器的侧屏蔽接触，其向MR传感器提供侧屏偏置场。上部SAF层将下部SAF层与MR传感器的顶部屏蔽和/或域控制结构（DCS）磁体分开，并将下部SAF层和传感器堆叠屏蔽到DCS杂散场，从而减少噪声。

48. 发明授权

US09082958B2 Tunneling magneto-resistive sensors with buffer layers 有权
标题翻译：隧道磁阻传感器与缓冲层
公开(公告)号：US09082958B2
公开(公告)日：2015-07-14
申请号：US14568645
申请日：2014-12-12
申请人： SEAGATE TECHNOLOGY LLC
发明人： Bin Lu , Qing He , Mark Covington , Yunhao Xu , Wei Tian
IPC分类号： G11B5/39 , H01L43/08 , H01L43/02
CPC分类号： H01L43/08 , G01R33/098 , G11B5/3909 , G11B2005/3996 , H01L43/02
摘要： In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.
摘要翻译：在某些实施例中，隧道磁阻（TMR）传感器包括位于种子层和覆盖层之间的传感器堆叠。种子层包括包含非磁性镍合金的第一缓冲层。在某些实施例中，传感器堆叠包括顶部和底部屏蔽以及邻近底部屏蔽定位的种子层。种子层具有包括镍合金的第一缓冲层。

49. 发明申请

US20150192648A1 Magnetoresistance Element with Improved Response to Magnetic Fields 有权
标题翻译：具有改善磁场响应的磁阻元件
公开(公告)号：US20150192648A1
公开(公告)日：2015-07-09
申请号：US14529564
申请日：2014-10-31
申请人： Allegro MicroSystems, LLC
发明人： Paolo Campiglio , Bryan Cadugan , Claude Fermon , REMY LASSALLE-BALIER
IPC分类号： G01R33/09 , G01R33/00
CPC分类号： G11B5/3932 , G01R33/0052 , G01R33/09 , G01R33/093 , G01R33/098 , G11B5/39 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/3263 , H01F10/3272 , H01F41/306 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/41
摘要： A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.
摘要翻译：磁阻元件具有钉扎布置，其具有两个反铁磁钉扎层，两个钉扎层和自由层。两个反铁磁钉扎层之一和自由层之间的间隔层具有被选择为允许两个反铁磁钉扎层中的一个的可控部分钉扎的材料。

50. 发明申请

US20150147481A1 METHOD FOR MAKING A SCISSORING-TYPE CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH EXCHANGE-COUPLED SOFT SIDE SHIELDS 审中-公开
标题翻译：用于形成交换型电流 - 平面到平面（CPP）磁性传感器的交换耦合软边框的方法
公开(公告)号：US20150147481A1
公开(公告)日：2015-05-28
申请号：US14085593
申请日：2013-11-20
申请人： HGST Nertherlands B..V.
发明人： Patrick Mesquita Braganca , Jordan Asher Katine , Neil Smith
IPC分类号： G11B5/39 , C25D7/00 , C25D5/48
CPC分类号： C25D7/001 , C25D5/48 , G11B5/3163 , G11B5/3909 , G11B5/3912 , G11B2005/3996
摘要： A method for making a scissoring type current-perpendicular-to-the-plane magnetoresistive sensor with exchange-coupled soft side shields uses oblique angle ion milling to remove unwanted material from the side edges of the upper free layer. All of the layers making up the sensor stack are deposited as full films. The sensor stack is then ion milled to define the sensor side edges. The side regions are then refilled by deposition of an insulating layer. Next, the lower soft magnetic layers of the exchange-coupled side shields are deposited, which also coats the insulating layer up to and past the side edges of the upper free layer. The soft magnetic material adjacent the side edges of the upper free layer is removed by oblique angle ion beam milling. The material for the antiparallel-coupling (APC) layers is deposited, followed by deposition of the material for the upper soft magnetic layers of the exchange-coupled side shields.
摘要翻译：制造具有交换耦合软侧屏蔽的剪切型电流 - 垂直于平面的磁阻传感器的方法使用斜角离子铣削从上自由层的侧边缘去除不需要的材料。构成传感器堆叠的所有层都作为完整的膜沉积。然后将传感器堆叠离散研磨以限定传感器侧边缘。然后通过沉积绝缘层来重新填充侧面区域。接下来，沉积交换耦合侧屏蔽的下软磁层，其也将绝缘层涂覆到上自由层的侧边缘并经过上自由层的侧边缘。通过倾斜角离子束研磨去除与上部自由层的侧边缘相邻的软磁性材料。沉积用于反平行耦合（APC）层的材料，随后沉积用于交换耦合侧屏蔽的上软磁层的材料。

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