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41. 发明申请

US20070057235A1 Additives to prevent degradation of cyclic alkene derivatives 有权
标题翻译：用于防止环烯衍生物降解的添加剂
公开(公告)号：US20070057235A1
公开(公告)日：2007-03-15
申请号：US11519579
申请日：2006-09-12
申请人： Daniel Teff , John Chagolla
发明人： Daniel Teff , John Chagolla
IPC分类号： C09K15/00
CPC分类号： C07C39/06 , C07C7/20 , C07C39/04 , C07C13/64 , C07C13/00
摘要： A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one antioxidant compound having the formula (I), wherein R1 through R5 can each independently be H, OH, C1-C8 linear, branched, or cyclic alkyl, C1-C8 linear, branched, or cyclic alkoxy or substituted or unsubstituted aryl, and wherein the antioxidant compound is present in an amount between 1 ppm and 200 ppm and has a boiling point lower than 265° C. A method for forming a layer of carbon-doped silicon oxide on a substrate, which uses the stabilized alkene composition and a silicon containing compound.
摘要翻译：包含一种或多种环状烯烃的稳定的环烯烃组合物和至少一种具有式（I）的抗氧化剂化合物，其中R 1至R 5各自独立地为H ，OH，C 1 -C 8直链，支链或环状烷基，C 1 -C 8直链，支链或环状烷氧基或取代或未取代的芳基，并且其中抗氧化剂化合物的存在量为1ppm至200ppm，沸点低于265℃。一种形成碳掺杂硅层的方法氧化物，其使用稳定的烯烃组合物和含硅化合物。

42. 发明申请

US20070057234A1 Additives to prevent degradation of cyclic alkene derivatives 有权
标题翻译：用于防止环烯衍生物降解的添加剂
公开(公告)号：US20070057234A1
公开(公告)日：2007-03-15
申请号：US11519524
申请日：2006-09-12
申请人： Daniel Teff , John Chagolla
发明人： Daniel Teff , John Chagolla
IPC分类号： C09K15/00
CPC分类号： C09K15/08 , C07C7/20 , C07C39/04 , C07C39/06 , C07C13/64
摘要： A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one antioxidant compound having the formula (I), wherein R1 through R5 can each independently be H, OH, C1-C8 linear, branched, or cyclic alkyl, C1-C8 linear, branched, or cyclic alkoxy or substituted or unsubstituted aryl, and wherein the antioxidant compound is present in an amount between 1 ppm and 200 ppm, and wherein said composition is purged with at least one inert gas after said composition is introduced to a container intended for storage or shipping of said composition. A method for forming a layer of carbon-doped silicon oxide on a substrate, which uses the stabilized alkene composition and a silicon containing compound.
摘要翻译：包含一种或多种环状烯烃的稳定的环烯烃组合物和至少一种具有式（I）的抗氧化剂化合物，其中R 1至R 5各自独立地为H ，OH，C 1 -C 8直链，支链或环状烷基，C 1 -C 8直链，支链或环状烷氧基或取代或未取代的芳基，并且其中所述抗氧化剂化合物的存在量为1ppm至200ppm，并且其中所述组合物在所述组合物被引入到预期的容器中之后用至少一种惰性气体吹扫用于存储或运输所述组合物。在基板上形成碳掺杂氧化硅层的方法，该方法使用稳定的烯烃组合物和含硅化合物。

43. 发明申请

US20060240358A1 Pretreatment compositions 审中-公开
标题翻译：预处理组合物
公开(公告)号：US20060240358A1
公开(公告)日：2006-10-26
申请号：US11386958
申请日：2006-03-22
申请人： David Powell , Ahmad Naiini , N. Metivier , Donald Perry
发明人： David Powell , Ahmad Naiini , N. Metivier , Donald Perry
IPC分类号： G03C5/00
CPC分类号： G03F7/11 , G03F7/038 , G03F7/039 , G03F7/09 , G03F7/16
摘要： A pretreatment composition for treating a substrate to be subjected to forming a relief pattern thereon by exposure to actinic radiation, the pretreatment composition comprising: (a) at least one compound having Structure VI wherein, V is selected from CH and N, Y is selected from O and NR3 wherein R3 is selected from H, CH3 and C2H5, R1 and R2 are each independently selected from H, a C1-C4 alkyl group, a C1-C4 alkoxy group, cyclopentyl and cyclohexyl, or alternatively, R1 and R2 can be fused to produce a substituted or unsubstituted benzene ring, with the proviso that the substituent is not an electron withdrawing group, (b) at least one organic solvent, and optionally, (c) at least one adhesion promoter; wherein the amount of the compound of Structure VI present in the composition effective to inhibit residue from forming when the photosensitive composition is coated on a substrate and the coated substrate is subsequently processed to form an image on the substrate. Processes for pretreatment of substrates and processes for forming relief images on pretreated substrates are disclosed.
摘要翻译：一种预处理组合物，用于通过暴露于光化辐射来处理待形成浮雕图案的基底，所述预处理组合物包含：（a）至少一种具有结构VI的化合物，其中V选自CH和N，Y被选择其中R 3选自H，CH 3和C 2 H 3，其中R 3选自H，CH 3和C 2 H 3， 5个，R 1和R 2各自独立地选自H，C 1 -C 4 - C 1 -C 4烷基，C 1 -C 4烷氧基，环戊基和环己基，或者R 1和R 2 可以融合以产生取代或未取代的苯环，条件是取代基不是吸电子基团，（b）至少一种有机溶剂，和任选地（c）至少一种粘合促进剂; 其中存在于组合物中的结构VI的化合物有效地抑制当将光敏组合物涂覆在基底上时形成的残留物和涂覆的基底，随后被处理以在基底上形成图像。公开了用于预处理基板的处理和用于在预处理的基板上形成浮雕图像的工艺。

44. 发明申请

US20050238997A1 Thermally cured undercoat for lithographic application 有权
标题翻译：用于光刻应用的热固化底漆
公开(公告)号：US20050238997A1
公开(公告)日：2005-10-27
申请号：US11075518
申请日：2005-03-09
申请人： Binod De , Sanjay Malik , J. Kocab , Thomas Sarubbi
发明人： Binod De , Sanjay Malik , J. Kocab , Thomas Sarubbi
IPC分类号： G03C1/492 , G03F7/09
CPC分类号： G03F7/094 , C09D133/14 , Y10S430/11 , Y10S430/111 , Y10S430/128
摘要： Thermally curable undercoat composition comprising for producing a bilayer relief image comprising: a) a polymer of Structure I comprising repeating units of Structure II, III, and IV b) a phenolic crosslinker; c) a thermal acid generator (TAG); and d) a solvent.
摘要翻译：包含用于制备双层浮雕图像的可热固化底涂层组合物，其包含：a）结构I的聚合物，其包含结构II，III和IV的重复单元b）酚交换剂; c）热酸生成器（TAG）; 和d）溶剂。

45. 发明授权

US12104108B2 Etching compositions 有权
公开(公告)号：US12104108B2
公开(公告)日：2024-10-01
申请号：US17102961
申请日：2020-11-24
申请人： Fujifilm Electronic Materials U.S.A., Inc.
发明人： Tomonori Takahashi , Frank Gonzalez
IPC分类号： C09K13/06 , C09K13/00 , C23F1/10 , C23F1/44 , H01L21/02 , H01L21/3213
CPC分类号： C09K13/06 , C09K13/00 , C23F1/10 , C23F1/44 , H01L21/02068 , H01L21/32134
摘要： The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tungsten (W) and/or titanium nitride (TiN) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

46. 发明授权

US12065587B2 Polishing compositions for reduced defectivity and methods of using the same 有权
公开(公告)号：US12065587B2
公开(公告)日：2024-08-20
申请号：US17868203
申请日：2022-07-19
申请人： FUJIFILM ELECTRIC MATERIALS U.S.A., INC.
发明人： James McDonough , Saul Alvarado
IPC分类号： C09G1/02 , C09G1/04 , H01L21/306 , H01L21/321
CPC分类号： C09G1/02 , C09G1/04 , H01L21/30625 , H01L21/3212
摘要： Chemical mechanical polishing compositions include an abrasive, an additive, and water. The polishing compositions have a value of less than 800,000 for the relation: large particle counts/weight percent abrasive, when measured using a 0.2 μm bin size.

47. 发明公开

US20240248400A1 DIELECTRIC FILM FORMING COMPOSITION CONTAINING ACYL GERMANIUM COMPOUND 审中-公开
公开(公告)号：US20240248400A1
公开(公告)日：2024-07-25
申请号：US18542862
申请日：2023-12-18
申请人： Fujifilm Electronic Materials U.S.A., Inc.
发明人： Binod B. De , Sanjay Malik , William A. Reinerth , Stephanie Dilocker
IPC分类号： G03F7/031 , C08G73/10 , C08J5/18 , G03F7/037 , G03F7/20
CPC分类号： G03F7/031 , C08G73/1032 , C08G73/1067 , C08J5/18 , G03F7/037 , G03F7/2002 , C08J2379/08 , H01L21/31144
摘要： This disclosure relates to a dielectric film forming composition that includes at least one resin; and at least one acyl germanium compound, as well as related processes, films, dry film structures, and articles.

48. 发明公开

US20240174924A1 ETCHING COMPOSITIONS 审中-公开
公开(公告)号：US20240174924A1
公开(公告)日：2024-05-30
申请号：US18386364
申请日：2023-11-02
申请人： Fujifilm Electronic Materials U.S.A., Inc.
发明人： Emil A. Kneer , William A. Wojtczak
IPC分类号： C09K13/00 , C23F11/14 , H01L21/306
CPC分类号： C09K13/00 , C23F11/149 , H01L21/30612
摘要： The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing titanium nitride (TiN) from a semiconductor substrate without substantially forming a cobalt oxide hydroxide layer.

49. 发明公开

US20240117270A1 CLEANING COMPOSITIONS AND METHODS OF USE THEREOF 审中-公开
公开(公告)号：US20240117270A1
公开(公告)日：2024-04-11
申请号：US18544841
申请日：2023-12-19
申请人： Fujifilm Electronic Materials U.S.A., Inc.
发明人： Zachary L. Schaefer , Eric Turner , Carl Ballesteros
IPC分类号： C11D1/66 , C11D1/00 , C11D3/20 , H01L21/02
CPC分类号： C11D2111/22 , C11D1/008 , C11D1/662 , C11D3/2075 , H01L21/02065 , H01L21/02074
摘要： The present disclosure relates to cleaning compositions that are used to clean semiconductor substrates. These cleaning compositions can remove the defects/contaminants arising from previous processing on the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one pH adjusting agent and at least one biosurfactant.

50. 发明授权

US11912921B2 Etching compositions 有权
公开(公告)号：US11912921B2
公开(公告)日：2024-02-27
申请号：US17398181
申请日：2021-08-10
申请人： Fujifilm Electronic Materials U.S.A., Inc.
发明人： Mick Bjelopavlic , Carl Ballesteros
IPC分类号： C09K13/10 , H01L21/306 , C09K13/08
CPC分类号： C09K13/10 , C09K13/08 , H01L21/30604
摘要： The present disclosure is directed to etching compositions that are useful for, e.g., selectively removing silicon germanium (SiGe) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

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