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    • 47. 发明授权
    • Resin film manufacturing method, transfer belt, transfer unit, and image forming apparatus
    • 树脂膜制造方法,转印带,转印单元和成像装置
    • US08335460B2
    • 2012-12-18
    • US12553533
    • 2009-09-03
    • Nobuyuki IchizawaMasato OnoTomoko Suzuki
    • Nobuyuki IchizawaMasato OnoTomoko Suzuki
    • G03G15/01
    • B30B5/04G03G15/162G03G2215/1623Y10T428/1352
    • A tubular body 101 includes a layer containing a resin and conductive particles 112, the layer having a first region 111C that is free of conductive particles and lies at the outermost surface, and a second region 111B that has higher conductivity than other regions and lies closer to the innermost surface than the first region. A coating film of a coating liquid containing the conductive particles and resin material is dried, and then an eluting solvent for eluting the resin material from the film is applied thereto. As a result of this, the conductive particles are localized in the coating film at the side coated with the eluting solvent. Thereafter, upon drying the eluting solvent, the resin material dissolved in the eluting solvent deposits on the region where the conductive particles are localized, whereby a particle-free resin region free of the conductive particles is formed.
    • 管状体101包括含有树脂的层和导电性粒子112,该层具有不具有导电粒子且位于最外表面的第一区域111C,以及比其他区域更高的导电率的第二区域111B 到最内表面比第一区域。 将含有导电性颗粒和树脂材料的涂布液的涂膜干燥,然后向其上涂布用于从树脂材料中洗脱的洗脱溶剂。 其结果是,导电粒子位于涂布有洗脱溶剂的一侧的涂膜中。 此后,在洗脱溶剂干燥后,溶解在洗脱溶剂中的树脂材料沉积在导电颗粒定位的区域上,由此形成不含导电颗粒的无颗粒树脂区域。
    • 48. 发明授权
    • Multiphase voltage regulators and methods for voltage regulation
    • 多相电压调节器和电压调节方法
    • US07898233B2
    • 2011-03-01
    • US12101665
    • 2008-04-11
    • Tetsuo SatoMasato OnoRyotaro Kudo
    • Tetsuo SatoMasato OnoRyotaro Kudo
    • G05F1/40
    • H02M3/1584H02M1/36
    • A multiphase voltage regulator system comprises a microcontroller unit (MCU) including a reference voltage generator, and a timing generator for generating n-phase start timing signals; a load for receiving an output voltage; a comparator comparing the reference voltage and output voltage to generate a comparison result; and at least n points of load (POLs) coupled between the MCU and load for controlling output voltage in response to the n-phase start timing signals and the comparison result. Each POL may include a high-side and low-side transistor; and a D-FlipFlop, the D terminal coupled High, the clock terminal coupled to receive a control signal based on a respective one of the n-phase start timing signals, the Q terminal coupled to drive the high-side transistor, the /Q terminal coupled to drive the low-side transistor, and the reset terminal coupled to receive a reset control signal based on the comparison result.
    • 多相电压调节器系统包括一个包括参考电压发生器的微控制器单元(MCU)和用于产生n相启动定时信号的定时发生器; 用于接收输出电压的负载; 比较器比较参考电压和输出电压以产生比较结果; 以及耦合在MCU和负载之间的至少n个负载点(POL),用于响应于n相开始定时信号和比较结果来控制输出电压。 每个POL可以包括高边和低边晶体管; 和D-FlipFlop,D端耦合高电平,时钟端子被耦合以基于n相开始定时信号中的相应一个接收控制信号,Q端耦合以驱动高侧晶体管,/ Q 端子耦合以驱动低侧晶体管,并且复位端子被耦合以基于比较结果接收复位控制信号。
    • 49. 发明申请
    • III/V GROUP NITRIDE SEMICONDUCTOR, PHOTOCATALYTIC SEMICONDUCTOR DEVICE, PHOTOCATALYTIC OXIDATION-REDUCTION REACTION APPARATUS AND EXECUTION PROCESS OF PHOTOELECTROCHEMICAL REACTION
    • III / V族氮化物半导体,光电子半导体器件,光催化氧化还原反应装置和光电化学反应的执行过程
    • US20090045072A1
    • 2009-02-19
    • US12066069
    • 2006-09-06
    • Katsushi FujiiKazuhiro OhkawaMasato OnoTakashi Ito
    • Katsushi FujiiKazuhiro OhkawaMasato OnoTakashi Ito
    • C25B1/00C01B21/00C25B9/00
    • C30B29/403B01J35/004C30B29/406H01L21/0254H01L21/02576H01L21/0262
    • Provided are a III/V group nitride semiconductor causing an oxidation-reduction reaction at a high photoconversion efficiency by irradiation of light, a photocatalytic semiconductor device, a photocatalytic oxidation-reduction reaction apparatus, and an execution process of a photoelectrochemical reaction.In the III/V group nitride semiconductor, the full width at half maximum of an X-ray rocking curve on a catalytic reaction surface thereof is 400 arcsec or less, and a carrier density in a surface layer portion having the catalytic reaction surface is 1.5×1016 cm−3 or more, but 3.0×1018 cm−3 or less. The photocatalytic semiconductor device has the III/V group nitride semiconductor laminated on a substrate. In the photocatalytic oxidation-reduction reaction apparatus, one electrode of a pair of electrodes for electrolysis, which are electrically connected to each other in a state brought into contact with an electrolyte, is composed of the III/V group nitride semiconductor, and a catalytic reaction surface making up the III/V group nitride semiconductor is irradiated with light, thereby causing an oxidation reaction or reduction reaction on the catalytic reaction surface.
    • 提供一种III / V族氮化物半导体,通过光照射,光催化半导体器件,光催化氧化还原反应设备和光电化学反应的执行过程,在光转换效率高的光转换效率下进行氧化还原反应。 在III / V族氮化物半导体中,催化反应面的X射线摇摆曲线的半峰全宽为400arcsec以下,具有催化反应面的表层部的载流子密度为1.5 x1016cm -3以上,3.0×10 18 cm -3以下。 光催化半导体器件具有层叠在基板上的III / V族氮化物半导体。 在光催化氧化还原反应装置中,在与电解质接触的状态下电连接的一对电极的一个电极由III / V族氮化物半导体和催化剂 对构成III / V族氮化物半导体的反应面进行光照射,从而在催化反应面上发生氧化反应或还原反应。