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    • 41. 发明授权
    • Magnetic detecting element provided with free layer having layered-ferri configuration
    • 磁性检测元件设置有具有层状结构的自由层
    • US07397639B2
    • 2008-07-08
    • US11194090
    • 2005-07-28
    • Tomohiro YamashitaNaoya HasegawaEiji UmetsuRyo NakabayashiAkira Takahashi
    • Tomohiro YamashitaNaoya HasegawaEiji UmetsuRyo NakabayashiAkira Takahashi
    • G11B5/39
    • B82Y25/00B82Y10/00G01R33/093G11B5/3903G11B5/3945
    • A magnetic detecting element, which can suppress change in output asymmetry even if the magnetization direction of a pinned magnetic layer is changed 180°, is provided. The magnetic-film-thickness of a second free magnetic layer is increased so as to be greater than that of a first free magnetic layer and offset the torque applied to the second free magnetic layer with that applied to the first free magnetic layer when the sensing current magnetic field occurs. Thus, change in the magnetization direction of the free magnetic layer before and after a sensing current is applied in the magnetic detecting element can be suppressed. The orthogonal state between the free magnetic layer and the pinned magnetic layer is maintained even when a sensing current in the same direction as that before the occurrence is applied in the magnetic detecting element wherein pin inversion occurred, and the output asymmetry is maintained suitably.
    • 即使磁性层的磁化方向为180°,也能够抑制输出不对称的变化的磁性检测元件。 第二自由磁性层的磁膜厚度增加到大于第一自由磁性层的磁膜厚度,并且当施加到第一自由磁性层时,施加到第二自由磁性层上的扭矩偏移到第一自由磁性层 发生电流磁场。 因此,可以抑制在磁检测元件中施加感测电流之前和之后的自由磁性层的磁化方向的变化。 即使当在发生针反转的磁检测元件中施加与发生前相同的方向的感测电流时,也保持自由磁性层和被钉扎磁性层之间的正交状态,并且适当地保持输出不对称性。
    • 45. 发明申请
    • Floating Lock Device
    • 浮动锁定装置
    • US20080019229A1
    • 2008-01-24
    • US11547180
    • 2005-03-31
    • Hiroto HandaAkira Takahashi
    • Hiroto HandaAkira Takahashi
    • G11B7/00
    • G11B17/051G11B17/021G11B17/223
    • To provide a floating lock device which can smoothly and continuously perform an operation of swinging-in and swinging-out a drive unit and switching between a floating state and lock state with a reduced space and simple configuration. The floating lock device comprises: a pick arm 130 which can be swung into and swung out of a space created by splitting trays 250 capable of housing a plurality of disks D; a drive chassis 120 which is mounted on the pick arm 130 and which has a drive unit playing the disk D; a drive mechanism which drives the pick arm 130; a floating lock mechanism of the drive chassis 120; a turning table 123 on which the disk D is mounted; and a control plate 136 which transmits drive power of the drive mechanism to the floating lock mechanism.
    • 提供一种浮动锁定装置,其可以平滑且连续地执行驱动单元的摆动和摆动的操作,并且以缩小的空间和简单的配置在浮动状态和锁定状态之间切换。 浮动锁定装置包括:拾取臂130,其能够摆动并从能够容纳多个盘D的分离盘250产生的空间摆动; 驱动机架120,其安装在拾取臂130上,并且具有播放盘D的驱动单元; 驱动拾取臂130的驱动机构; 驱动底盘12​​0的浮动锁定机构; 安装有盘D的转台123; 以及将驱动机构的驱动力传递到浮动锁定机构的控制板136。
    • 47. 发明申请
    • Disk Device
    • 磁盘设备
    • US20080019227A1
    • 2008-01-24
    • US10594860
    • 2005-03-31
    • Hiroto HandaAkira Takahashi
    • Hiroto HandaAkira Takahashi
    • G11B17/22
    • G11B17/021G11B17/225
    • To provide a disk device, which can reliably lead and house a disk into a disk housing section requiring only a small space. The disk device is provided with: a pick arm 130 which swings and inserts a drive unit for playing a disk D into a space created by splitting a plurality of trays 250; and a loading arm 256 which can move between a leading position for abutting on the disk D inserted/ejected with respect to the tray 250 and leading the disk D, and a withdrawing position for withdrawing from the disk to be played. A pick swing cam plate 138, which controls the drive of the pick arm 130 and the loading arm 256, is provided so as to be slidingly moved by a drive mechanism.
    • 为了提供一种磁盘装置,其可以可靠地将磁盘引导并容纳在仅需要较小空间的磁盘容纳部分中。 磁盘装置设置有:拾取臂130,其将用于播放盘D的驱动单元摆动并插入到通过分割多个托盘250而产生的空间中; 以及装载臂256,其可以在相对于托盘250插入/排出并引导盘D的盘D上的前导位置之间移动,以及用于从要播放的盘中取出的退回位置。 控制拾取臂130和装载臂256的驱动的拾取摆动凸轮板138被设置成由驱动机构滑动移动。
    • 49. 发明授权
    • Etching method, gate etching method, and method of manufacturing semiconductor devices
    • 蚀刻方法,栅极蚀刻方法以及半导体器件的制造方法
    • US07291559B2
    • 2007-11-06
    • US11011947
    • 2004-12-15
    • Akira Takahashi
    • Akira Takahashi
    • H01L21/302
    • H01L21/28123H01L21/0276H01L21/32137H01L21/32139
    • In a method of manufacturing a semiconductor device, a dummy sample and an actual device are prepared. The dummy sample and the actual device have substantially an identical layer and an identical resist pattern formed on the layer. Then, a dummy discharge is carried out. The layer and the resist pattern of the dummy sample are etched in an etching device so that the layer and the resist pattern of the dummy device are simultaneously slimmed. Finally, the layer and the resist pattern of the actual device are etched in the etching device after the etching of the dummy sample so that the layer and the resist pattern of the actual device are simultaneously slimmed.
    • 在制造半导体器件的方法中,制备虚拟样品和实际器件。 虚拟样品和实际器件具有基本上相同的层和形成在该层上的相同抗蚀剂图案。 然后,进行虚拟放电。 在蚀刻装置中蚀刻伪样品的层和抗蚀剂图案,使得虚设装置的层和抗蚀剂图案同时变薄。 最后,在对虚拟样品进行蚀刻之后,在蚀刻装置中蚀刻实际器件的层和抗蚀剂图案,使得实际器件的层和抗蚀剂图案同时变薄。