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41. 发明申请

US20070230522A1 Optical semiconductor device 有权
标题翻译：光半导体器件
公开(公告)号：US20070230522A1
公开(公告)日：2007-10-04
申请号：US11727959
申请日：2007-03-29
申请人： Tsutomu Ishikawa
发明人： Tsutomu Ishikawa
IPC分类号： H01S3/04
CPC分类号： H01S5/0612 , H01S5/0261 , H01S5/0265 , H01S5/06258 , H01S5/1209 , H01S5/125
摘要： An optical semiconductor device has a heater, an optical waveguide layer, a first electrode and a second electrode. The heater is provided on a first semiconductor region and has more than one heater segment coupled or separated to each other. The optical waveguide layer is provided in the first semiconductor region and receives heat from the heater. The first electrode is coupled to a connecting point of the heater segments adjacent to each other. The second electrodes are electrically common and are coupled to other ends of the heater segments in opposite side of the connecting point respectively.
摘要翻译：光学半导体器件具有加热器，光波导层，第一电极和第二电极。加热器设置在第一半导体区域上，并且具有多个彼此耦合或分离的加热器段。光波导层设置在第一半导体区域中并且从加热器接收热量。第一电极耦合到彼此相邻的加热器段的连接点。第二电极是电气公共的，并且分别耦合到加热器段的连接点的相对侧的另一端。

42. 发明申请

US20070230521A1 Optical semiconductor device and controlling method of the same 有权
标题翻译：光半导体器件及其控制方法
公开(公告)号：US20070230521A1
公开(公告)日：2007-10-04
申请号：US11727953
申请日：2007-03-29
申请人： Tsutomu Ishikawa , Takuya Fujii
发明人： Tsutomu Ishikawa , Takuya Fujii
IPC分类号： H01S3/10 , H01S3/04 , H01S5/00
CPC分类号： H01S5/02276 , G02F1/0147 , H01L2224/48091 , H01S5/024 , H01S5/0261 , H01S5/028 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/06804 , H01S5/1209 , H01S5/125 , H01L2924/00014
摘要： An optical semiconductor device includes a wavelength-tunable semiconductor laser chip, a mount carrier, a first temperature sensor and a wire. The wavelength-tunable semiconductor laser chip has a first optical waveguide and a second optical waveguide. The second optical waveguide has a heater on a surface thereof and is optically coupled to the first optical waveguide. The mount carrier is for mounting the wavelength-tunable semiconductor laser chip, and has a first area arranged at a surface of the mount carrier of the first optical waveguide side when the wavelength-tunable semiconductor laser chip is mounted. The first temperature sensor is mounted on the first area. The wire couples between the heater and a second area arranged at a surface of the mount carrier of the second optical waveguide side when the wavelength-tunable semiconductor laser chip is mounted.
摘要翻译：光学半导体器件包括波长可调谐半导体激光器芯片，安装载体，第一温度传感器和导线。波长可调半导体激光器芯片具有第一光波导和第二光波导。第二光波导在其表面上具有加热器，并且光耦合到第一光波导。安装载体用于安装波长可调半导体激光器芯片，并且当安装波长可调谐半导体激光器芯片时，具有布置在第一光波导侧的安装载体的表面处的第一区域。第一温度传感器安装在第一区域上。当安装波长可调谐半导体激光器芯片时，线耦合在加热器和布置在第二光波导侧的安装载体的表面处的第二区域之间。

43. 发明申请

US20070228550A1 Optical Semiconductor device 审中-公开
标题翻译：光半导体器件
公开(公告)号：US20070228550A1
公开(公告)日：2007-10-04
申请号：US11727952
申请日：2007-03-29
申请人： Tsutomu Ishikawa
发明人： Tsutomu Ishikawa
IPC分类号： H01L33/00 , H01L23/053 , H01L23/14 , H01L31/12 , H01L23/12
CPC分类号： H01S5/0612 , H01S5/024 , H01S5/0261 , H01S5/0265 , H01S5/06258 , H01S5/1209 , H01S5/125
摘要： An optical semiconductor device has a semiconductor substrate, a semiconductor region and heater. The semiconductor region has a stripe shape demarcated with a top face and a side face thereof. The stripe shape has a width smaller than a width of the semiconductor substrate. An optical waveguide layer is located in the semiconductor region. A distance from a lower end of the side face of the semiconductor region to the optical waveguide layer is more than half of the width of the semiconductor region. The heater is provided above the optical waveguide layer.
摘要翻译：光半导体器件具有半导体衬底，半导体区域和加热器。半导体区域具有与顶面和侧面划分的条纹形状。条纹形状的宽度小于半导体衬底的宽度。光波导层位于半导体区域中。从半导体区域的侧面的下端到光波导层的距离为半导体区域的宽度的一半以上。加热器设置在光波导层上。

44. 发明授权

US07196347B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07196347B2
公开(公告)日：2007-03-27
申请号：US10876838
申请日：2004-06-25
申请人： Tsutomu Ishikawa
发明人： Tsutomu Ishikawa
IPC分类号： H01L29/06 , H01L29/12
CPC分类号： H01L33/10 , H01L33/04 , H01L33/32
摘要： In a III group nitride compound semiconductor wherein light that has been emitted in a light emitting portion formative layer is reflected by a multilayered reflection layer that is provided between the light emitting portion formative layer and sapphire substrate, it is desirable, for increasing the reflection efficiency of the light that has been emitted in the light emitting portion formative layer, that the multilayered reflection layer be provided at a position that is as near to the light emitting portion as possible. However, since the multilayered reflection layer is high in resistance value and also high in power consumption, locating the multilayered reflection layer near the light emitting portion formative layer results in that the resistance value in the vicinity of a relevant cathode electrode becomes increased. This raises the problem that emission of light occurs only in part of the light emitting portion formative layer. In the semiconductor light emitting device of the present invention, a superlattice layer is provided between the light emitting portion formative layer and the cathode electrode.
摘要翻译：在其中在发光部分形成层中发射的光被设置在发光部分形成层和蓝宝石衬底之间的多层反射层反射的III族氮化物化合物半导体中，期望提高反射效率在发光部分形成层中已经发射的光的多层反射层设置在尽可能接近发光部分的位置。然而，由于多层反射层的电阻值高，功耗高，所以将多层反射层定位在发光部形成层附近，导致相关阴极附近的电阻值上升。这就产生了仅在发光部分形成层的一部分发生光的问题。在本发明的半导体发光器件中，在发光部形成层和阴极之间设置超晶格层。

45. 发明授权

US06850550B2 Complex coupling MQW semiconductor laser 有权
标题翻译：复耦MQW半导体激光器
公开(公告)号：US06850550B2
公开(公告)日：2005-02-01
申请号：US09805182
申请日：2001-03-14
申请人： Hirohiko Kobayashi , Tsutomu Ishikawa , Hajime Shoji
发明人： Hirohiko Kobayashi , Tsutomu Ishikawa , Hajime Shoji
IPC分类号： H01L29/06 , H01S5/12 , H01S5/20 , H01S3/08 , H01S5/00
CPC分类号： H01S5/1228 , H01S5/1231 , H01S5/2086 , H01S5/209
摘要： A method of manufacturing a distributed feedback semiconductor laser, has the steps of: growing on a semiconductor substrate a lamination of alternately stacked lower barrier layer and lower well layer having a band gap narrower than the lower barrier layer, to form a lower quantum well structure; growing an intermediate layer on an uppermost lower well layer, the intermediate layer having a band gap broader than the lower well and a thickness thicker than the lower barrier layer; growing on the intermediate layer a lamination of alternately stacked upper well layer and upper barrier layer having a band gap broader than the upper well layer and a thickness thinner than the intermediate layer, to form an upper quantum well structure; forming a mask on the upper quantum well structure, the mask having periodical pattern; by using the mask as an etching mask, etching the upper quantum well structure in a periodical shape by using the intermediate layer as an etching margin layer; and removing the mask. Complex coupling DFB lasers with a small variation in characteristics can be provided.
摘要翻译：制造分布式反馈半导体激光器的方法具有以下步骤：在半导体衬底上生长具有比下阻挡层窄的带隙的交替堆叠的下阻挡层和下阱层的叠层，以形成较低量子阱结构 ; 在最上面的下阱层上生长中间层，所述中间层具有比下阱更宽的带隙和比下阻挡层厚的厚度; 在中间层上生长具有比上部阱层宽的带隙和比中间层更薄的厚度的交替层叠的上部阱层和上部阻挡层的叠层以形成上部量子阱结构; 在上量子阱结构上形成掩模，掩模具有周期性图案; 通过使用掩模作为蚀刻掩模，通过使用中间层作为蚀刻边缘层来蚀刻周期形状的上量子阱结构; 并取下面罩。可以提供具有小的特性变化的复耦合DFB激光器。

46. 发明授权

US06560266B2 Distributed feedback semiconductor laser 有权
公开(公告)号：US06560266B2
公开(公告)日：2003-05-06
申请号：US09964614
申请日：2001-09-28
申请人： Hajime Shoji , Hirohiko Kobayashi , Tsutomu Ishikawa
发明人： Hajime Shoji , Hirohiko Kobayashi , Tsutomu Ishikawa
IPC分类号： H01S5187
CPC分类号： H01S5/1228 , H01S5/2059
摘要： A DFB laser in which a thickness of an active layer changes periodically and a greater part of current injected from external sides is selectively injected into the thick regions (projected regions) of the active layer. Therefore, the ratio of the gain coupling to the refractive index coupling can be further increased, and a threshold current can be lowered, and stability of single mode oscillation can also be improved.

47. 发明授权

US5777955A Signal processing circuit for an optical disk player including data decoding based on a regenerated bit clock 失效
标题翻译：用于包括基于再生位时钟的数据解码的光盘播放器的信号处理电路
公开(公告)号：US5777955A
公开(公告)日：1998-07-07
申请号：US670797
申请日：1996-06-21
申请人： Osamu Ikeda , Naobumi Nagasawa , Tsutomu Ishikawa , Akira Tsukihashi
发明人： Osamu Ikeda , Naobumi Nagasawa , Tsutomu Ishikawa , Akira Tsukihashi
IPC分类号： G11B19/12 , G11B20/10 , G11B20/12 , G11B20/14 , G11B20/18 , G11B17/22
CPC分类号： G11B19/12 , G11B20/10 , G11B20/10527 , G11B20/1403 , G11B20/1217 , G11B20/1251 , G11B20/1876 , G11B2020/10546 , G11B2220/213 , G11B2220/2545
摘要： In a CD type disk player, main data in a digital signal, which is read from a CD type disk traced by a pickup, is decoded in a decoding means in accordance with a bit clock regenerated in a clock regenerator. Both the writing and reading of the data into and from a memory can be synchronized with the bit clock. Also, a selector can switch over the operation clock of the decoding means, thereby selecting the more important factor, either time base precision or decoding ability, in correspondence with the kind of disk. While avoiding the enlargement in size and power consumption of the disk motor, the read out of the information from the disk can be conducted at a higher speed.
摘要翻译：在CD型盘播放器中，根据在时钟再生器中再生的比特时钟，在解码装置中解码从拾取器跟踪的CD型盘读取的数字信号中的主数据。数据的写入和读取都可以与位时钟同步。此外，选择器可以切换解码装置的操作时钟，从而根据盘的种类选择更重要的因素，即时基精度或解码能力。在避免盘式电动机的尺寸和功耗的放大的同时，能够以更高的速度进行从盘的读出信息。

48. 发明授权

US5136649A FM stereophonic receiver 失效
标题翻译： FM STEREOPHONIC接收器
公开(公告)号：US5136649A
公开(公告)日：1992-08-04
申请号：US526830
申请日：1990-05-22
申请人： Tsutomu Ishikawa
发明人： Tsutomu Ishikawa
IPC分类号： H04B1/10 , H04B1/16 , H04H1/00 , H04H40/63
CPC分类号： H04H40/63 , H04B1/1669
摘要： An FM stereophonic receiver for receiving FM stereophonic broadcast signals, which includes a first comparison circuit for generating a first control signal corresponding to ratio of a left stereo signal (L) to a right stereo signal (R), a first separation circuit for separating the first control signal into a left dominant signal and a right dominant signal, a second comparison circuit for generating a second control signal corresponding to ratio of a stereo sum signal (L+R) to a stereo difference signal (L-R), a second separation circuit for separating the second control signal into a sum dominant signal and a difference dominant signal, a first level control circuit for controlling an output signal level of a stereo multiplex circuit through employment of the left and right dominant signals and the sum and difference dominant signals, a level detection device for detecting level of the second control signal, and a second level control circuit for controlling level of the difference dominant signal according to an output signal of the level detection device.
摘要翻译：一种用于接收FM立体声广播信号的FM立体声接收机，其包括用于产生对应于左立体声信号（L）与右立体声信号（R）的比率的第一控制信号的第一比较电路，用于将第一控制信号变成左主控信号和右主信号，第二比较电路，用于产生对应于立体声信号（L + R）与立体声差分信号（LR）的比率的第二控制信号;第二分离电路用于将第二控制信号分离为总主导信号和差分主导信号;第一电平控制电路，用于通过使用左和右主导信号以及和和差分主导信号来控制立体声多路复用电路的输出信号电平，用于检测第二控制信号的电平的电平检测装置，以及用于控制差的电平的第二电平控制电路根据电平检测装置的输出信号的显示信号。

49. 发明授权

US4835017A Liquid composition for forming silica-based coating film 失效
标题翻译：用于形成二氧化硅基涂膜的液体组合物
公开(公告)号：US4835017A
公开(公告)日：1989-05-30
申请号：US194248
申请日：1988-05-16
申请人： Tsutomu Ishikawa , Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura
发明人： Tsutomu Ishikawa , Muneo Nakayama , Akira Hashimoto , Toshihiro Nishimura
IPC分类号： C08L83/02 , C08K5/59 , C08L83/04 , C09D4/00 , C09D183/00 , C09D183/02 , H01L23/29
CPC分类号： H01L23/29 , C09D4/00 , H01L2924/0002
摘要： A liquid coating composition for forming a silica-based coating film on the surface of a substrate such as a semiconductor silicon wafer. A partial hydrolysis product of an alkoxy silane and an alkoxy or phenoxy compound of pentavalent antimony are dissolved in an organic solvent. As compared with a trivalent antimony compound used in the prior art, the pentavalent antimony compound as an additive is very effective in respect of the improvements in the uniformity and increased thickness of the silica-based coating film prepared from the coating composition as well as storage stability of the coating composition over time.
摘要翻译：一种用于在诸如半导体硅晶片的基板的表面上形成二氧化硅基涂层膜的液体涂料组合物。将烷氧基硅烷和五价锑的烷氧基或苯氧基化合物的部分水解产物溶解在有机溶剂中。与现有技术中使用的三价锑化合物相比，作为添加剂的五价锑化合物对于由涂料组合物制备的二氧化硅基涂层的均匀性和增加的厚度以及存储涂料组合物随时间的稳定性。

50. 发明授权

US09099841B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US09099841B2
公开(公告)日：2015-08-04
申请号：US12734665
申请日：2008-10-17
申请人： Tsuguki Noma , Miroru Murayama , Satoshi Uchida , Tsutomu Ishikawa
发明人： Tsuguki Noma , Miroru Murayama , Satoshi Uchida , Tsutomu Ishikawa
IPC分类号： H01S5/00 , H01S5/223 , H01S5/22
CPC分类号： H01S5/223 , H01S5/221 , H01S5/2219 , H01S5/2227 , H01S5/2231 , H01S5/34326
摘要： Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate (10); an n-type clad layer (12) arranged on the substrate (10); an active layer (13) arranged on the n-type clad layer (12); a p-type clad layer (14), which is arranged on the active layer (13) and composed of a compound containing Al and has a stripe-shaped ridge structure to be a current channel; a current block layer (16), which is arranged on the surface of the p-clad layer (14) excluding an upper surface of the ridge structure and composed of a compound containing Al and has an Al composition ratio not more than that of the p-type clad layer (14); and a light absorption layer (17), which is arranged on the current block layer (16) and absorbs light at the laser oscillation wavelength.
摘要翻译：提供了即使对于高温输出也具有低工作电流并稳定地振荡的半导体激光器。半导体激光器设置有基板（10）; 布置在所述基板（10）上的n型覆盖层（12）; 布置在所述n型覆层（12）上的有源层（13）; p型覆盖层（14），其配置在有源层（13）上，由含有Al的化合物构成，具有条状的脊状结构成为电流通道; 布置在p包覆层（14）的表面上的电流阻挡层（16），除了脊结构的上表面，并且由含Al的化合物构成，Al组成比不大于 p型覆层（14）; 以及布置在当前阻挡层（16）上并吸收激光振荡波长的光的光吸收层（17）。

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