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41. 发明授权

US08791464B2 Nonvolatile semiconductor memory device and method for manufacturing same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08791464B2
公开(公告)日：2014-07-29
申请号：US12820371
申请日：2010-06-22
申请人： Tomoko Fujiwara , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
发明人： Tomoko Fujiwara , Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
IPC分类号： H01L29/792
CPC分类号： H01L29/792 , H01L27/11526 , H01L27/11551 , H01L27/11556 , H01L27/11573 , H01L27/11578 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/7926
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a stacked structure, a semiconductor pillar, a memory layer and an outer insulating film. The stacked structure includes a plurality of electrode films and a plurality of interelectrode insulating films alternately stacked in a first direction. The semiconductor pillar pierces the stacked structure in the first direction. The memory layer is provided between the electrode films and the semiconductor pillar. The outer insulating film is provided between the electrode films and the memory layer. The device includes a first region and a second region. An outer diameter of the outer insulating film along a second direction perpendicular to the first direction in the first region is larger than that in the second region. A thickness of the outer insulating film along the second direction in the first region is thicker than that in the second region.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括堆叠结构，半导体柱，存储层和外部绝缘膜。堆叠结构包括沿第一方向交替堆叠的多个电极膜和多个电极间绝缘膜。半导体柱沿第一方向刺穿层叠结构。存储层设置在电极膜和半导体柱之间。外绝缘膜设置在电极膜和存储层之间。该装置包括第一区域和第二区域。沿着与第一区域的第一方向垂直的第二方向的外绝缘膜的外径大于第二区域的外径。第一区域中沿着第二方向的外绝缘膜的厚度比第二区域厚。

42. 发明授权

US08653582B2 Nonvolatile semiconductor memory device and method for manufacturing same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08653582B2
公开(公告)日：2014-02-18
申请号：US12724713
申请日：2010-03-16
申请人： Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Junya Matsunami , Tomoko Fujiwara , Hideaki Aochi , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
发明人： Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Junya Matsunami , Tomoko Fujiwara , Hideaki Aochi , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
IPC分类号： H01L29/788
CPC分类号： H01L27/11582 , H01L21/223 , H01L21/265 , H01L27/11578 , H01L29/04 , H01L29/1037 , H01L29/16 , H01L29/42344 , H01L29/4916 , H01L29/66666 , H01L29/66833 , H01L29/7827 , H01L29/792 , H01L29/7926
摘要： A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.
摘要翻译：一种非易失性半导体存储器件，包括：堆叠结构单元，包括在第一方向上交替地堆叠有多个电极膜的多个绝缘膜; 选择栅极电极，其沿所述第一方向堆叠在所述层叠结构单元上; 绝缘层，其沿所述第一方向堆叠在所述选择栅电极上; 第一半导体柱在第一方向上穿透层叠结构单元，选择栅电极和绝缘层，第一半导体柱的第一截面具有环形构造，第一横截面在垂直于第一方向第一核心单元，其被埋在第一半导体柱的内侧，第一芯单元从绝缘层的上表面凹入; 以及设置在所述第一芯单元上以接触所述第一芯单元的所述第一半导体柱的第一导电层。

43. 发明授权

US08569133B2 Nonvolatile semiconductor memory device and method of manufacturing the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08569133B2
公开(公告)日：2013-10-29
申请号：US13366509
申请日：2012-02-06
申请人： Masaru Kito , Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kidoh , Hiroyasu Tanaka , Megumi Ishiduki , Yosuke Komori , Hideaki Aochi
发明人： Masaru Kito , Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kidoh , Hiroyasu Tanaka , Megumi Ishiduki , Yosuke Komori , Hideaki Aochi
IPC分类号： H01L21/336
CPC分类号： H01L27/11578 , H01L27/11582 , H01L29/66833 , H01L29/792 , H01L29/7926
摘要： A nonvolatile semiconductor memory device includes a plurality of memory strings, each of which has a plurality of electrically rewritable memory cells connected in series; and select transistors, one of which is connected to each of ends of each of the memory strings. Each of the memory strings is provided with a first semiconductor layer having a pair of columnar portions extending in a perpendicular direction with respect to a substrate, and a joining portion formed so as to join lower ends of the pair of columnar portions; a charge storage layer formed so as to surround a side surface of the columnar portions; and a first conductive layer formed so as to surround the side surface of the columnar portions and the charge storage layer, and configured to function as a control electrode of the memory cells. Each of the select transistors is provided with a second semiconductor layer extending upwardly from an upper surface of the columnar portions; and a second conductive layer formed so as to surround a side surface of the second semiconductor layer with a gap interposed, and configured to function as a control electrode of the select transistors.
摘要翻译：非易失性半导体存储器件包括多个存储串，每个存储串具有串联连接的多个电可重写存储单元; 并选择晶体管，其中一个连接到每个存储器串的每一端。每个存储器串都具有第一半导体层，该第一半导体层具有相对于基板在垂直方向上延伸的一对柱状部分，以及形成为连接该一对柱状部分的下端的接合部分; 形成为围绕所述柱状部的侧面的电荷存储层; 以及形成为围绕柱状部分的侧面和电荷存储层的第一导电层，并且被配置为用作存储单元的控制电极。每个选择晶体管设置有从柱状部分的上表面向上延伸的第二半导体层; 以及第二导电层，其被形成为以间隔开的方式围绕所述第二半导体层的侧表面，并且被配置为用作所述选择晶体管的控制电极。

44. 发明授权

US08440528B2 Method for manufacturing a vertical nonvolatile semiconductor memory device including forming floating gates within the recesses created on the interlayer insulating films 有权
标题翻译：一种用于制造垂直非易失性半导体存储器件的方法，包括在层间绝缘膜上形成的凹槽内形成浮栅
公开(公告)号：US08440528B2
公开(公告)日：2013-05-14
申请号：US12638480
申请日：2009-12-15
申请人： Masaru Kito , Masaru Kidoh , Tomoko Fujiwara , Yosuke Komori , Megumi Ishiduki , Hiroyasu Tanaka , Yoshiaki Fukuzumi , Ryota Katsumata , Ryouhei Kirisawa , Junya Matsunami , Hideaki Aochi
发明人： Masaru Kito , Masaru Kidoh , Tomoko Fujiwara , Yosuke Komori , Megumi Ishiduki , Hiroyasu Tanaka , Yoshiaki Fukuzumi , Ryota Katsumata , Ryouhei Kirisawa , Junya Matsunami , Hideaki Aochi
IPC分类号： H01L21/336 , H01L21/4763
CPC分类号： H01L29/788 , G11C16/0458 , H01L27/11551 , H01L27/11556 , H01L27/1156 , H01L29/42324 , H01L29/66825 , H01L29/7881 , H01L29/7889
摘要： A nonvolatile semiconductor memory device includes: forming a stacked body by alternately stacking a plurality of interlayer insulating films and a plurality of control gate electrodes; forming a through-hole extending in a stacking direction in the stacked body; etching a portion of the interlayer insulating film facing the through-hole via the through-hole to remove the portion; forming a removed portion; forming a first insulating film on inner faces of the through-hole and the portion in which the interlayer insulating films are removed; forming a floating gate electrode in the portion in which the interlayer insulating films are removed; forming a second insulating film so as to cover a portion of the floating gate electrode facing the through-hole; and burying a semiconductor pillar in the through-hole.
摘要翻译：非易失性半导体存储器件包括：通过交替堆叠多个层间绝缘膜和多个控制栅电极来形成堆叠体; 在层叠体中形成沿堆叠方向延伸的通孔; 通过通孔蚀刻面向通孔的层间绝缘膜的一部分以除去该部分; 形成去除部分; 在通孔的内表面和除去层间绝缘膜的部分之间形成第一绝缘膜; 在除去层间绝缘膜的部分中形成浮栅电极; 形成第二绝缘膜，以覆盖面对通孔的浮栅电极的一部分; 并将半导体柱埋在通孔中。

45. 发明授权

US08372720B2 Non-volatile semiconductor storage device and method of manufacturing the same 有权
公开(公告)号：US08372720B2
公开(公告)日：2013-02-12
申请号：US12679991
申请日：2008-12-09
申请人： Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kidoh , Masaru Kito , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi
发明人： Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kidoh , Masaru Kito , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi
IPC分类号： H01L21/336 , H01L29/792
CPC分类号： H01L27/11582 , G11C16/0483 , H01L27/1052 , H01L27/11551 , H01L27/11556 , H01L27/11573 , H01L27/11575 , H01L27/11578 , H01L29/513
摘要： A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.

46. 发明授权

US08361862B2 Method for manufacturing nonvolatile semiconductor memory device and nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件和非易失性半导体存储器件的制造方法
公开(公告)号：US08361862B2
公开(公告)日：2013-01-29
申请号：US12714905
申请日：2010-03-01
申请人： Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Junya Matsunami , Tomoko Fujiwara , Hideaki Aochi , Ryouhei Kirisawa
发明人： Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Junya Matsunami , Tomoko Fujiwara , Hideaki Aochi , Ryouhei Kirisawa
IPC分类号： H01L21/336
CPC分类号： H01L27/11578 , H01L21/28282 , H01L27/11582
摘要： A method for manufacturing a nonvolatile semiconductor memory device, the device including a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction and a semiconductor pillar piercing the stacked structural unit in the first direction, the method includes: forming a stacked unit including a core material film alternately stacked with a sacrificial film on a major surface of a substrate perpendicular to the first direction; making a trench in the stacked unit, the trench extending in the first direction and a second direction in a plane perpendicular to the first direction; filling a filling material into the trench; removing the sacrificial film to form a hollow structural unit, the hollow structural unit including a post unit supporting the core material film on the substrate, the post unit being made of the filling material; and forming the stacked structural unit by stacking one of the insulating films and one of the electrode films on a surface of the core material film exposed by removing the sacrificial film.
摘要翻译：一种用于制造非易失性半导体存储器件的方法，该器件包括层叠结构单元，该堆叠结构单元包括在第一方向上交替堆叠多个电极膜的多个绝缘膜，以及沿第一方向穿透层叠结构单元的半导体柱，方法包括：在垂直于第一方向的基板的主表面上形成包括交替堆叠有牺牲膜的芯材膜的堆叠单元; 在所述堆叠单元中形成沟槽，所述沟槽在垂直于所述第一方向的平面中沿所述第一方向延伸并且沿第二方向延伸; 将填充材料填充到沟槽中; 去除所述牺牲膜以形成中空结构单元，所述中空结构单元包括支撑所述芯材膜的柱单元，所述柱单元由所述填充材料制成; 以及通过将绝缘膜和其中一个电极膜层叠在通过去除牺牲膜而暴露的芯材膜的表面上来形成层叠结构单元。

47. 发明授权

US08217446B2 Nonvolatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08217446B2
公开(公告)日：2012-07-10
申请号：US12559865
申请日：2009-09-15
申请人： Yoshiaki Fukuzumi , Masaru Kito , Ryota Katsumata , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi
发明人： Yoshiaki Fukuzumi , Masaru Kito , Ryota Katsumata , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Megumi Ishiduki , Hideaki Aochi
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L27/11578 , H01L21/28282 , H01L27/11582 , H01L29/66833 , H01L29/792 , H01L29/7926
摘要： Each of memory strings is provided with a first semiconductor layer having a pair of columnar portions extending in a perpendicular direction with respect to a substrate; a charge storage layer formed to surround a side surface of the columnar portions; and a first conductive layer formed to surround the charge storage layer. Each of the select transistors is provided with a second semiconductor layer extending upwardly from an upper surface of the columnar portions; a gate insulating layer formed to surround a side surface of the second semiconductor layer; and a second conductive layer formed to surround the gate insulating layer. An effective impurity concentration of the second semiconductor layer is less than or equal to an effective impurity concentration of the first semiconductor layer.
摘要翻译：每个存储器串都具有第一半导体层，该第一半导体层具有相对于衬底在垂直方向上延伸的一对柱状部分; 形成为围绕所述柱状部的侧面的电荷存储层; 以及形成为围绕电荷存储层的第一导电层。每个选择晶体管设置有从柱状部分的上表面向上延伸的第二半导体层; 形成为围绕所述第二半导体层的侧表面的栅极绝缘层; 以及形成为围绕所述栅极绝缘层的第二导电层。第二半导体层的有效杂质浓度小于或等于第一半导体层的有效杂质浓度。

48. 发明授权

US08199573B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08199573B2
公开(公告)日：2012-06-12
申请号：US12694677
申请日：2010-01-27
申请人： Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Tomoko Fujiwara , Megumi Ishiduki , Yosuke Komori , Yoshimasa Mikajiri , Shigeto Oota , Ryouhei Kirisawa , Hideaki Aochi
发明人： Yoshiaki Fukuzumi , Ryota Katsumata , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Tomoko Fujiwara , Megumi Ishiduki , Yosuke Komori , Yoshimasa Mikajiri , Shigeto Oota , Ryouhei Kirisawa , Hideaki Aochi
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C11/34 , G11C5/02 , G11C16/26
摘要： A nonvolatile semiconductor memory device comprises: a bit line; a source line; a memory string having a plurality of electrically data-rewritable memory transistors connected in series; a first select transistor provided between one end of the memory string and the bit line; a second select transistor provided between the other end of the memory string and the source line; and a control circuit configured to control a read operation. A plurality of the memory strings connected to one bit line via a plurality of the first select transistors. During reading of data from a selected one of the memory strings, the control circuit renders conductive the first select transistor connected to an unselected one of the memory strings and renders non-conductive the second select transistor connected to unselected one of the memory strings.
摘要翻译：非易失性半导体存储器件包括：位线; 源线; 具有串联连接的多个电数据可重写存储晶体管的存储器串; 设置在存储器串的一端和位线之间的第一选择晶体管; 设置在存储器串的另一端与源极线之间的第二选择晶体管; 以及控制电路，被配置为控制读取操作。经由多个第一选择晶体管连接到一个位线的多个存储器串。在从选择的一个存储器串读取数据期间，控制电路使连接到未选择的一个存储器串的第一选择晶体管导通，并且使第二选择晶体管连接到未选择的一个存储器串。

49. 发明授权

US08198667B2 Semiconductor memory device and method for manufacturing same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US08198667B2
公开(公告)日：2012-06-12
申请号：US12808321
申请日：2008-12-25
申请人： Takuji Kuniya , Yosuke Komori , Ryota Katsumata , Yoshiaki Fukuzumi , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Megumi Ishiduki , Hideaki Aochi
发明人： Takuji Kuniya , Yosuke Komori , Ryota Katsumata , Yoshiaki Fukuzumi , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Megumi Ishiduki , Hideaki Aochi
IPC分类号： H01L27/115 , H01L21/8247 , H01L29/792 , H01L29/788
CPC分类号： H01L29/792 , H01L27/115 , H01L27/11556 , H01L27/11568 , H01L29/66833 , H01L29/7926
摘要： A laminated body is formed by alternately laminating a plurality of dielectric films and electrode films on a silicon substrate. Next, a through hole extending in the lamination direction is formed in the laminated body. Next, a selective nitridation process is performed to selectively form a charge layer made of silicon nitride in a region of an inner surface of the through hole corresponding to the electrode film. Next, a high-pressure oxidation process is performed to form a block layer made of silicon oxide between the charge layer and the electrode film. Next, a tunnel layer made of silicon oxide is formed on an inner side surface of the through hole. Thus, a flash memory can be manufactured in which the charge layer is split for each electrode film.
摘要翻译：通过在硅衬底上交替层叠多个电介质膜和电极膜来形成层叠体。接下来，在层叠体中形成在层叠方向上延伸的贯通孔。接下来，进行选择性氮化处理，以在对应于电极膜的通孔的内表面的区域中选择性地形成由氮化硅制成的电荷层。接下来，进行高压氧化处理以在电荷层和电极膜之间形成由氧化硅制成的阻挡层。接下来，在通孔的内侧表面上形成由氧化硅制成的隧道层。因此，可以制造其中为每个电极膜分裂电荷层的快闪存储器。

50. 发明授权

US08169826B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08169826B2
公开(公告)日：2012-05-01
申请号：US12726858
申请日：2010-03-18
申请人： Tomoo Hishida , Yoshihisa Iwata , Megumi Ishiduki , Ryota Katsumata , Yoshiaki Fukuzumi , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Junya Matsunami , Tomoko Fujiwara , Hideaki Aochi , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
发明人： Tomoo Hishida , Yoshihisa Iwata , Megumi Ishiduki , Ryota Katsumata , Yoshiaki Fukuzumi , Masaru Kito , Masaru Kidoh , Hiroyasu Tanaka , Yosuke Komori , Junya Matsunami , Tomoko Fujiwara , Hideaki Aochi , Ryouhei Kirisawa , Yoshimasa Mikajiri , Shigeto Oota
IPC分类号： G11C16/04 , H01L29/792 , H01L29/66
CPC分类号： G11C5/025 , G11C5/02 , G11C5/04 , G11C16/0483 , H01L27/11573 , H01L27/11578 , H01L27/11582
摘要： A nonvolatile semiconductor memory device comprises: a plurality of first memory strings; a first select transistor having one end thereof connected to one end of the first memory strings; a first line commonly connected to the other end of a plurality of the first select transistors; a switch circuit having one end thereof connected to the first line; and a second line commonly connected to the other end of a plurality of the switch circuits. The switch circuit controls electrical connection between the second line and the first line.
摘要翻译：非易失性半导体存储器件包括：多个第一存储器串; 第一选择晶体管，其一端连接到第一存储器串的一端; 通常连接到多个第一选择晶体管的另一端的第一线; 开关电路，其一端连接到第一线; 以及通常连接到多个开关电路的另一端的第二线。开关电路控制第二线和第一线之间的电连接。

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