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41. 发明授权

US07919784B2 Semiconductor light-emitting device and method for making same 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US07919784B2
公开(公告)日：2011-04-05
申请号：US12063978
申请日：2006-09-29
申请人： Fengyi Jiang , Li Wang , Wenqing Fang
发明人： Fengyi Jiang , Li Wang , Wenqing Fang
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/145 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers.
摘要翻译：本发明的一个实施例提供了一种半导体发光器件，其包括：上包层; 下包层; 在上和下包层之间的有源层; 形成到上包层的导电路径的上欧姆接触层; 以及形成下部包层的导电路径的下欧姆接触层。下欧姆接触层具有与上欧姆接触层的形状基本上不同的形状，从而当施加电压时，载流子转移离开有源层的基本上在上欧姆接触层下方的部分到上，下欧姆接触层。

42. 发明申请

US20110042685A1 SUBSTRATES AND METHODS OF FABRICATING EPITAXIAL SILICON CARBIDE STRUCTURES WITH SEQUENTIAL EMPHASIS 审中-公开
标题翻译：基质和方法制备具有顺序渗透性的外源性碳化硅结构
公开(公告)号：US20110042685A1
公开(公告)日：2011-02-24
申请号：US12543473
申请日：2009-08-18
申请人： Li Wang , Sima Dimitrijev , Alan Iacopi , Jisheng Han , Leonie Hold , Philip Tanner , Fred Kong , Herbert Harrison
发明人： Li Wang , Sima Dimitrijev , Alan Iacopi , Jisheng Han , Leonie Hold , Philip Tanner , Fred Kong , Herbert Harrison
IPC分类号： H01L29/24 , C30B23/00
CPC分类号： C30B25/165 , C30B29/36 , H01L21/02381 , H01L21/02447 , H01L21/02529 , H01L21/0262
摘要： Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, and methods to form silicon carbide structures, including epitaxial layers, by supplying sources of silicon and carbon with sequential emphasis. In at least some embodiments, a method of forming an epitaxial layer of silicon carbide can include depositing a layer on a substrate in the presence of a silicon source, and purging gaseous materials subsequent to depositing the layer. Further, the method can include converting the layer into a sub-layer of silicon carbide in the presence of a carbon source, and purging other gaseous materials subsequent to converting the layer. The presence of the silicon source can be independent of the presence of the carbon source. In some embodiments, dopants, such as n-type dopants, can be introduced during the formation of the epitaxial layer of silicon carbide.
摘要翻译：本发明的实施例一般涉及半导体和半导体制造技术，更具体地涉及通过以顺序强调提供硅和碳的源来形成包括外延层的碳化硅结构的器件，集成电路，衬底和方法。在至少一些实施例中，形成碳化硅外延层的方法可以包括在硅源的存在下在衬底上沉积层，以及在沉积层之后吹扫气态材料。此外，该方法可以包括在碳源的存在下将层转化为碳化硅的子层，以及在转换层之后吹扫其它气态材料。硅源的存在可以独立于碳源的存在。在一些实施例中，可以在形成碳化硅外延层期间引入掺杂剂，例如n型掺杂剂。

43. 发明申请

US20110006319A1 GALLIUM NITRIDE LIGHT-EMITTING DEVICE WITH ULTRA-HIGH REVERSE BREAKDOWN VOLTAGE 有权
标题翻译：具有超高反向断电电压的氮化钠发光装置
公开(公告)号：US20110006319A1
公开(公告)日：2011-01-13
申请号：US12159850
申请日：2007-08-31
申请人： Fengyi Jiang , Li Wang , Wenqing Fang , Chunlan Mo , Yong Pu , Chuanbing Xiong
发明人： Fengyi Jiang , Li Wang , Wenqing Fang , Chunlan Mo , Yong Pu , Chuanbing Xiong
IPC分类号： H01L33/30 , H01L33/32
CPC分类号： H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/007
摘要： One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an active layer; and a p-type GaN-based semiconductor layer (p-type layer). The n-type layer is epitaxially grown by using ammonia gas (NH3) as the nitrogen source prior to growing the active layer and the p-type layer. The flow rate ratio between group V and group III elements is gradually reduced from an initial value to a final value. The GaN-based LED exhibits a reverse breakdown voltage equal to or greater than 60 volts.
摘要翻译：本发明的一个实施例提供了一种包含n型GaN基半导体层（n型层）的基于氮化镓（GaN）的半导体发光器件（LED）。活性层和p型GaN类半导体层（p型层）。在生长活性层和p型层之前，通过使用氨气（NH 3）作为氮源，外延生长n型层。 V组和III组元件之间的流量比从初始值逐渐减小到最终值。 GaN基LED呈现等于或大于60伏的反向击穿电压。

44. 发明申请

US20100266168A1 FINGERPRINT MATCHING METHOD AND APPARATUS 有权
标题翻译：指纹匹配方法和装置
公开(公告)号：US20100266168A1
公开(公告)日：2010-10-21
申请号：US12666186
申请日：2008-06-19
申请人： Li Wang , Abhir Bhalerao , Roland Wilson
发明人： Li Wang , Abhir Bhalerao , Roland Wilson
IPC分类号： G06K9/00
CPC分类号： G06K9/001
摘要： Exemplary embodiments of method and apparatus for processing the images of fingerprints can be provided. For example, aligned images can be subjected to a tessellation process, whereas each image can be partitioned into a number of regions. Within each region at least one parameter associated with the ridges can be measured and stored. Such exemplary parameter can include, e.g., the prevailing ridge orientation, the average ridge separation and the phase of the ridges. The data can be projected and stored in a multidimensional coordinate system, whereas the representations of any two data can be separated by an amount corresponding to the dissimilarity of these data.
摘要翻译：可以提供用于处理指纹图像的方法和装置的示例性实施例。例如，对齐的图像可以经历细分过程，而每个图像可以被分割成多个区域。在每个区域内，可以测量和存储与脊相关联的至少一个参数。这种示例性参数可以包括例如主要的脊取向，脊的平均脊分离和相位。数据可以被投影并存储在多维坐标系中，而任何两个数据的表示可以被分开对应于这些数据的不相似性的量。

45. 发明申请

US20100256204A1 MOLD-RESISTANT WALLBOARD 有权
标题翻译：耐模压墙板
公开(公告)号：US20100256204A1
公开(公告)日：2010-10-07
申请号：US12523875
申请日：2008-01-18
申请人： Sheila M. Tinetti , Paul Foley , Li Wang , Michael V. Enzien , Sanjay B. Bishnoi
发明人： Sheila M. Tinetti , Paul Foley , Li Wang , Michael V. Enzien , Sanjay B. Bishnoi
IPC分类号： A01N43/78 , A01P3/00 , B32B29/00
CPC分类号： D21H21/36 , A01N25/34 , A01N47/18 , B32B13/08 , B32B29/06 , D21H27/18 , E04C2/043 , Y10T428/31982 , Y10T428/31996 , A01N25/08 , A01N37/34 , A01N41/10 , A01N43/40 , A01N43/80 , A01N47/12 , A01N47/48 , A01N2300/00
摘要： Wallboard and facing paper that provides increased mold resistance at lower biocide loadings. The biocide is: (a) an n-alkyl isothiazolinone such as octylisothiazolinone (OIT), a monohalo and dihalo substituted n-alkylisothiazolinone such as chloromethylisothiazolinone (CMIT) or dichlorooctylisothiazolinone (DCOIT), 3-iodo-2-propynyl-butylcarbamate (IPBC), chlorothalonil, methylene-bis-thiocyanate, or mixtures of two or more thereof; or (b) carbendazim and a second biocide selected from 3-iodo-2-propynyl-butylcarbamate (IPBC), diiodomethyltolylsulfone (DIMTS), sodium pyrithione, octylisothiazolinone (OIT), dichlorooctylisothiazolinone (DCOIT), and chlorothalonil.
摘要翻译：墙板和面向纸，在较低的杀菌剂负载下提供增加的抗模压性。杀生物剂是：（a）正辛基异噻唑啉酮如辛基异噻唑啉酮（OIT），单卤代和二卤代取代的正烷基异噻唑啉酮如氯甲基异噻唑啉酮（CMIT）或二氯辛基异噻唑啉酮（DCOIT），3-碘-2-丙炔基 - 丁基氨基甲酸酯），百菌清，亚甲基双硫氰酸盐，或其两种或多种的混合物; 或（b）多菌灵和选自3-碘-2-丙炔基 - 丁基氨基甲酸酯（IPBC），二碘甲基甲苯砜（DIMTS），吡啶硫酮钠，辛基异噻唑啉酮（OIT），二氯辛基异噻唑啉酮（DCOIT）和百菌清的第二种杀生物剂。

46. 发明授权

US07758695B2 Method for fabricating metal substrates with high-quality surfaces 有权
标题翻译：用于制造具有高质量表面的金属基材的方法
公开(公告)号：US07758695B2
公开(公告)日：2010-07-20
申请号：US11713423
申请日：2007-03-02
申请人： Chuanbing Xiong , Wenqing Fang , Li Wang , Guping Wang , Fengyi Jiang
发明人： Chuanbing Xiong , Wenqing Fang , Li Wang , Guping Wang , Fengyi Jiang
IPC分类号： C30B1/02
CPC分类号： C23C14/541 , C23C14/0005 , C23C14/18 , C23C14/505 , Y10S117/917 , Y10T428/12382 , Y10T428/12528
摘要： One embodiment of the present invention provides a method for fabricating a high-quality metal substrate. During operation, the method involves cleaning a polished single-crystal substrate. A metal structure of a predetermined thickness is then formed on a polished surface of the single-crystal substrate. The method further involves removing the single-crystal substrate from the metal structure without damaging the metal structure to obtain the high-quality metal substrate, wherein one surface of the metal substrate is a high-quality metal surface which preserves the smoothness and flatness of the polished surface of the single-crystal substrate.
摘要翻译：本发明的一个实施例提供了制造高品质金属基板的方法。在操作过程中，该方法包括清洗抛光的单晶衬底。然后在单晶衬底的抛光表面上形成预定厚度的金属结构。该方法还包括从金属结构中去除单晶衬底而不损坏金属结构以获得高质量的金属衬底，其中金属衬底的一个表面是高质量的金属表面，其保持了平滑度和平坦度抛光表面的单晶基板。

47. 发明授权

US07719164B2 Patterned dielectric elastomer actuator and method of fabricating the same 有权
标题翻译：图案介质弹性体致动器及其制造方法
公开(公告)号：US07719164B2
公开(公告)日：2010-05-18
申请号：US12187124
申请日：2008-08-06
申请人： Mihai Gologanu , Viorel Avramescu , Stefan Dan Costea , Li Wang
发明人： Mihai Gologanu , Viorel Avramescu , Stefan Dan Costea , Li Wang
IPC分类号： H02N1/00
CPC分类号： H01L41/082 , H01L41/45 , Y10T29/49002 , Y10T29/49226
摘要： A patterned dielectric elastomer actuator is disclosed which includes a series of thin parallel elastomer filaments, separated by certain distances sandwiched between a pair of rigid electrodes. The elastomer filaments and air acts as a patterned dielectric layer. The elastomer filaments can compress laterally from a circular cross-section to an elliptical shape when a voltage is applied between the rigid electrodes. The elastomer filaments can touch laterally, which implies no further squeezing in order to provide a minimal secure distance between the rigid electrodes. The dielectric elastomer actuator can be fabricated utilizing a reel-to-reel fabrication process with the thin elastomer filaments fabricated ahead of time, by extrusion techniques and cured completely before storing on reels.
摘要翻译：公开了一种图案化的介电弹性体致动器，其包括一系列薄的平行的弹性体细丝，其被夹在一对刚性电极之间的特定距离分开。弹性体丝和空气用作图案化的介电层。当在刚性电极之间施加电压时，弹性体长丝可以从圆形横截面横向压缩成椭圆形。弹性体长丝可以横向接触，这意味着不再进一步挤压，以便在刚性电极之间提供最小的可靠距离。电介质弹性体致动器可以利用卷对卷制造工艺制造，其中薄的弹性体细丝提前制造，通过挤出技术，并且在存储在卷轴之前完全固化。

48. 发明申请

US20100077135A1 MEMORY WEAR LEVELING METHOD, SYSTEM AND DEVICE 审中-公开
标题翻译：内存磨损方法，系统和设备
公开(公告)号：US20100077135A1
公开(公告)日：2010-03-25
申请号：US12499859
申请日：2009-07-09
申请人： Rong Li , Yuefeng Jin , Li Wang
发明人： Rong Li , Yuefeng Jin , Li Wang
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： A wear leveling method for a non-volatile memory is provided. The non-volatile memory includes a plurality of data blocks, each corresponding to a time value. The data blocks are arranged according to a sequence of the time values corresponding thereto. The arranged blocks form a key table. An erase operation is determined whether to be executed for the data blocks. When the erase operation is executed for the data blocks, the corresponding data block is erased according to a sequence of the time values of the data blocks in the key table.
摘要翻译：提供了一种用于非易失性存储器的磨损均衡方法。非易失性存储器包括多个数据块，每个数据块对应于时间值。数据块根据与其对应的时间值的顺序排列。排列的块形成关键表。确定是否对数据块执行擦除操作。当对数据块执行擦除操作时，根据密钥表中的数据块的时间值的顺序擦除对应的数据块。

49. 发明申请

US20090050927A1 METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A SILICON SUBSTRATE 有权
标题翻译：在硅衬底上制造InGaAlN膜和发光器件的方法
公开(公告)号：US20090050927A1
公开(公告)日：2009-02-26
申请号：US11910735
申请日：2006-04-14
申请人： Fengyi Jiang , Wenqing Fang , Li Wang , Chunlan Mo , Hechu Liu , Maoxing Zhou
发明人： Fengyi Jiang , Wenqing Fang , Li Wang , Chunlan Mo , Hechu Liu , Maoxing Zhou
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02658 , H01L21/78 , H01L33/0095
摘要： There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate.
摘要翻译：提供了一种在硅衬底上制造InGaAlN膜的方法，其包括以下步骤：在硅衬底上形成具有凹槽和台面的图案，并在衬底表面上沉积InGaAlN膜，其中凹槽的深度为大于6nm，并且形成在槽的两侧的台面上的InGaAlN膜在水平方向上断开。该方法可以通过简单地处理基板来生长高质量，无裂纹和大面积的InGaAlN膜。同时，还提供了通过使用硅衬底制造InGaAlN发光器件的方法。

50. 发明授权

US07480921B1 Method, system, and apparatus for customizing web parts 有权
标题翻译：用于定制Web部件的方法，系统和设备
公开(公告)号：US07480921B1
公开(公告)日：2009-01-20
申请号：US10675173
申请日：2003-09-30
申请人： Eric B. Vigesaa , Joshua Lindquist , Daniel Simmons , Li Wang
发明人： Eric B. Vigesaa , Joshua Lindquist , Daniel Simmons , Li Wang
IPC分类号： G06F13/00
CPC分类号： G06F17/3089
摘要： A method, system, and apparatus for customizing web part objects. A web part object 28 that is capable of providing a presentation is accessed. Once the web part object is accessed, a specification file 38 associated with the web part object is also accessed. The specification file contains additional code, such as HTML, JAVA Script, or other code. The additional code is applied to a web part to modify the presentation of the web part. Thus, the presentation of the web part is modified in accordance with the specification file to provide a modified presentation.
摘要翻译：用于自定义Web部件对象的方法，系统和设备。访问能够提供呈现的web部件对象28。一旦访问了Web部件对象，也访问与web部件对象相关联的规范文件38。规范文件包含其他代码，如HTML，JAVA Script或其他代码。附加的代码被应用到Web部件以修改Web部件的呈现。因此，根据规范文件修改web部分的呈现以提供修改的呈现。

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