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41. 发明申请

US20060205219A1 Compositions and methods for chemical mechanical polishing interlevel dielectric layers 审中-公开
标题翻译：化学机械抛光层间电介质层的组成和方法
公开(公告)号：US20060205219A1
公开(公告)日：2006-09-14
申请号：US11357538
申请日：2006-02-16
申请人： Arthur Baker , Sarah Lane , Zhendong Liu
发明人： Arthur Baker , Sarah Lane , Zhendong Liu
IPC分类号： C09K13/00 , B44C1/22 , H01L21/302
CPC分类号： C09G1/02 , H01L21/31053
摘要： The present invention provides an aqueous composition useful for polishing dielectric layers on a semiconductor wafer in interlevel dielectric processes comprising by weight percent 0.001 to 1 quaternary ammonium compound, 0.01 to 20 colloidal silica, 0 to 5 surfactant, 0 to 5 carboxylic acid polymer, and balance water.
摘要翻译：本发明提供一种水性组合物，其用于在层间电介质方法中在半导体晶片上抛光电介质层，其包含重量百分比为0.001至1的季铵化合物，0.01至20种胶体二氧化硅，0至5种表面活性剂，0至5种羧酸聚合物和平衡水。

42. 发明申请

US20060110923A1 Barrier polishing solution 审中-公开
标题翻译：阻隔抛光液
公开(公告)号：US20060110923A1
公开(公告)日：2006-05-25
申请号：US10996684
申请日：2004-11-24
申请人： Zhendong Liu , John Quanci , Robert Schmidt
发明人： Zhendong Liu , John Quanci , Robert Schmidt
IPC分类号： C09K13/00 , H01L21/302 , B44C1/22
CPC分类号： H01L21/3212 , C09G1/02
摘要： The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, inhibitor for reducing removal rate of the nonferrous interconnect metals, ammonium salt, 0.1 to 50 weight percent silica containing 0.001 to 1 ppm sodium and 0.001 to 1 ppm potassium, and balance water; and the solution having a pH of less than 3 with an inorganic acid used as a titrant.
摘要翻译：在有侵蚀电介质的有色互连金属的存在下，抛光溶液可用于优先除去阻挡材料。抛光液含有0-20％（重量）的氧化剂，用于降低有色互连金属的去除率的抑制剂，铵盐，含有0.001至1ppm的钠和0.001至1ppm的钾的0.1至50重量％的二氧化硅和余量的水; 并且使用无机酸作为滴定剂的pH小于3的溶液。

43. 发明授权

US07018560B2 Composition for polishing semiconductor layers 有权
标题翻译：用于研磨半导体层的组合物
公开(公告)号：US07018560B2
公开(公告)日：2006-03-28
申请号：US10634437
申请日：2003-08-05
申请人： Zhendong Liu , John Quanci
发明人： Zhendong Liu , John Quanci
IPC分类号： C09K13/06
CPC分类号： C09G1/02 , H01L21/31053 , H01L21/3212
摘要： An aqueous polishing composition comprises a corrosion inhibitor for limiting removal of an interconnect metal with an acidic pH. The composition includes an organic-containing ammonium salt formed with R1, R2, R3 and R4 are radicals, R1 has a carbon chain length of 2 to 15 carbon atoms. The organic-containing ammonium salt has a concentration that accelerates TEOS removal and decreases removal of at least one coating selected from the group consisting of SiC, SiCN, Si3N4 and SiCO.
摘要翻译：水性抛光组合物包含用于限制去除具有酸性pH的互连金属的腐蚀抑制剂。该组合物包括由R 1，R 2，R 3和R 4形成的含有机铵盐，是基团，R 1具有2至15个碳原子的碳链长度。含有机铵铵盐具有加速TEOS去除并降低至少一种选自由SiC，SiCN，Si 3 N 4 N和S 3组成的组中的至少一种涂层的去除的浓度， SiCO。

44. 发明授权

US08491808B2 Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride 有权
标题翻译：抛光包括多晶硅，氧化硅和氮化硅的衬底的方法
公开(公告)号：US08491808B2
公开(公告)日：2013-07-23
申请号：US12724685
申请日：2010-03-16
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon, silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; and a substance according to formula I wherein each of R1, R2, R3, R4, R5, R6 and R7 is a bridging group having a formula —(CH2)n—, wherein n is an integer selected from 1 to 10; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the silicon oxide and silicon nitride is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括多晶硅，氧化硅和氮化硅; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂烷基芳基聚醚磺酸盐化合物，其中烷基芳基聚醚磺酸盐化合物具有与芳环结合的烷基的疏水部分和具有4至100个碳原子的非离子非环状亲水部分; 和根据式I的物质，其中R1，R2，R3，R4，R5，R6和R7中的每一个是具有式 - （CH 2）n - 的桥连基团，其中n是选自1至10的整数; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中从所述衬底去除所述氧化硅和氮化硅中的至少一些。

45. 发明授权

US08444728B2 Stabilized chemical mechanical polishing composition and method of polishing a substrate 有权
标题翻译：稳定的化学机械抛光组合物和抛光基材的方法
公开(公告)号：US08444728B2
公开(公告)日：2013-05-21
申请号：US13494412
申请日：2012-06-12
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R8 is independently selected from hydrogen, a saturated or unsaturated C1-15 alkyl group, C6-15 aryl group, C6-15 aralkyl group, C6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).
摘要翻译：化学机械抛光组合物，其包含作为初始组分的水; 0.1〜20重量％的平均粒径为5〜50nm的研磨剂; 和0.001至1重量％的根据式（II）的金刚烷基物质：其中A选自N和P; 其中每个R 8独立地选自氢，饱和或不饱和的C 1-15烷基，C 6-15芳基，C 6-15芳烷基，C 6-15烷芳基; 并且其中式（II）中的阴离子可以是平衡式（II）中阳离子上的正电荷的任何阴离子。

46. 发明申请

US20120003834A1 Method Of Polishing Chalcogenide Alloy 审中-公开
标题翻译：抛光硫族化合物的方法
公开(公告)号：US20120003834A1
公开(公告)日：2012-01-05
申请号：US12828441
申请日：2010-07-01
申请人： Ja-Ho Koo , Zhendong Liu , Kaveri Sawant , Kancharla-Arun Kumar Reddy
发明人： Ja-Ho Koo , Zhendong Liu , Kaveri Sawant , Kancharla-Arun Kumar Reddy
IPC分类号： H01L21/306
CPC分类号： C09G1/02 , H01L45/06 , H01L45/144 , H01L45/1683
摘要： The invention provides a method for chemical mechanical polishing of a substrate. The invention comprises providing a substrate, wherein the substrate comprises a chalcogenide phase change alloy and providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises, by weight percent, water, 0.1 to 30 abrasive, at least one polishing agent selected from 0.05 to 5 halogen compound, 0.05 to 5 phthalic acid, 0.05 to 5 phthalic anhydride and salts, derivatives and mixtures thereof and wherein the chemical mechanical polishing composition has a pH of 2 to less than 7. A chemical mechanical polishing pad polishes the substrate with the chemical mechanical polishing pad and the chemical mechanical polishing composition to selectively or non-selectively remove the chalcogenide phase change alloy from the substrate.
摘要翻译：本发明提供了一种用于基材的化学机械抛光的方法。本发明包括提供一种基材，其中该基材包括一种硫族化物相变合金并提供一种化学机械抛光组合物，其中该化学机械抛光组合物包含按重量百分比计的水，0.1至30种研磨剂，至少一种抛光剂， 0.05至5个卤素化合物，0.05至5邻苯二甲酸，0.05至5邻苯二甲酸酐及其盐，衍生物和混合物，其中化学机械抛光组合物的pH值为2至小于7.化学机械抛光垫用化学机械抛光垫和化学机械抛光组合物，以从衬底中选择性或非选择性地除去硫族化物相变合金。

47. 发明授权

US08071479B2 Chemical mechanical polishing composition and methods relating thereto 有权
标题翻译：化学机械抛光组合物及其相关方法
公开(公告)号：US08071479B2
公开(公告)日：2011-12-06
申请号：US12332816
申请日：2008-12-11
申请人： Zhendong Liu
发明人： Zhendong Liu
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A method for chemical mechanical polishing of a substrate comprising a barrier material in the presence of at least one of an interconnect metal and a low-k dielectric material using a chemical mechanical polishing composition comprising water; 1 to 40 wt % abrasive having an average particle size of ≦100 nm; 0.001 to 5 wt % quaternary compound; a material having a formula (I): wherein R is selected from C2-C20 alkyl, C2-C20 aryl, C2-C20 aralkyl and C2-C20 alkaryl; wherein x is an integer from 0 to 20; wherein y is an integer from 0 to 20; wherein x+y≧1; and, wherein the chemical mechanical polishing composition has a pH≦5.
摘要翻译：在使用包含水的化学机械抛光组合物的介质金属和低k电介质材料中的至少一种的存在下，包括阻挡材料的基材的化学机械抛光的方法; 1至40重量％的平均粒度为＆amp; 100埃的研磨剂; 100纳米; 0.001〜5重量％的季铵化合物; 具有式（I）的材料：其中R选自C 2 -C 20烷基，C 2 -C 20芳基，C 2 -C 20芳烷基和C 2 -C 20烷芳基; 其中x是0至20的整数; 其中y是0至20的整数; 其中x +y≥1; 并且其中所述化学机械抛光组合物具有pH＆nlE; 5。

48. 发明授权

US08025813B2 Chemical mechanical polishing composition and methods relating thereto 有权
标题翻译：化学机械抛光组合物及其相关方法
公开(公告)号：US08025813B2
公开(公告)日：2011-09-27
申请号：US12617140
申请日：2009-11-12
申请人： Zhendong Liu , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Zhendong Liu , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , H01L21/31053
摘要： A chemical mechanical polishing composition useful for chemical mechanical polishing of a substrate, wherein the substrate comprises a silicon oxide material and a silicon nitride material; and methods of making and using the chemical mechanical polishing composition. The chemical mechanical polishing composition comprises, as initial components: at least one of a first substance and a second substance; wherein the first substance is according to formula I wherein the second substance is according to formula II an abrasive; and water.
摘要翻译：一种用于基材的化学机械抛光的化学机械抛光组合物，其中所述基材包括氧化硅材料和氮化硅材料; 以及制造和使用化学机械抛光组合物的方法。化学机械抛光组合物包含作为初始成分的第一物质和第二物质中的至少一种; 其中所述第一物质是根据式I，其中所述第二物质是根据式II的研磨剂; 和水。

49. 发明授权

US07981316B2 Selective barrier metal polishing method 有权
标题翻译：选择性屏障金属抛光方法
公开(公告)号：US07981316B2
公开(公告)日：2011-07-19
申请号：US11975804
申请日：2007-10-22
申请人： Zhendong Liu , Ross E. Barker, II
发明人： Zhendong Liu , Ross E. Barker, II
IPC分类号： C09K13/00 , C09K13/04 , C09K13/06 , H01L21/302
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , C23F3/06 , H01L21/3212 , H01L21/7684
摘要： The polishing method uses a polishing solution for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the group consisting of nitric acid, sulfuric acid, hydrochloric acid and phosphoric acid for adjusting a pH level of the polishing solution to less than 3, at least 0.0025 benzotriazole inhibitor for reducing removal rate of the interconnect metals, 0 to 10 surfactant, 0.01 to 10 colloidal silica having an average particle size of less than 50 nm and balance water and incidental impurities. The polishing solution has a tantalum nitride material to copper selectivity of at least 3 to 1 and a tantalum nitride to TEOS selectivity of at least 3 to 1.
摘要翻译：抛光方法使用在互连金属和电介质存在下去除阻挡材料的抛光溶液。抛光溶液以重量百分比计包含0.1至10种过氧化氢，至少一种选自硝酸，硫酸，盐酸和磷酸的pH调节剂，用于将抛光溶液的pH值调节至小于 3，至少含有0.0025的苯并三唑抑制剂，用于降低互连金属的去除速率，0至10表面活性剂，0.01至10个平均粒度小于50nm的胶体二氧化硅，余量为水和附带杂质。抛光溶液的氮化钽材料至铜选择性为至少3比1，氮化钽至TEOS选择性为至少3比1。

50. 发明授权

US07842192B2 Multi-component barrier polishing solution 有权
标题翻译：多组分屏障抛光液
公开(公告)号：US07842192B2
公开(公告)日：2010-11-30
申请号：US11349863
申请日：2006-02-08
申请人： Jinru Bian , Zhendong Liu
发明人： Jinru Bian , Zhendong Liu
IPC分类号： C09K13/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with a quanternary ammonium structure, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms in of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.
摘要翻译：在至少一种具有有限的电介质腐蚀的有色互连金属的存在下，抛光溶液可用于去除阻挡材料。该溶液含有0至20重量百分比的氧化剂，至少0.001重量％的用于降低有色互连金属去除速率的抑制剂，1ppm至4重量％的由铵季铵结构形成的含铵阳离子盐，1ppm至4重量％阴离子表面活性剂，阴离子表面活性剂具有4至25个碳原子，铵阳离子盐加阴离子表面活性剂的总碳原子数为6至40个碳原子，0至50重量％的研磨剂和余量的水; 并且该溶液的pH值小于7。

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