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41. 发明授权

US07772594B2 High-heat-resistive semiconductor device 失效
标题翻译：高耐热半导体器件
公开(公告)号：US07772594B2
公开(公告)日：2010-08-10
申请号：US11661778
申请日：2005-09-06
申请人： Yoshitaka Sugawara , Yoshikazu Shoji
发明人： Yoshitaka Sugawara , Yoshikazu Shoji
IPC分类号： H01L29/12 , C08G77/12 , C08G77/20
CPC分类号： C08L83/04 , C08G77/12 , C08G77/14 , C08G77/20 , C08G77/70 , H01L23/04 , H01L23/045 , H01L23/145 , H01L23/295 , H01L23/296 , H01L23/3121 , H01L23/48 , H01L24/45 , H01L24/48 , H01L25/0657 , H01L33/56 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/4823 , H01L2224/48465 , H01L2224/8592 , H01L2225/0651 , H01L2225/06555 , H01L2225/06582 , H01L2924/01012 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/12036 , H01L2924/12043 , H01L2924/12044 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/14 , H01L2924/16152 , H01L2924/00014 , H01L2924/00
摘要： The outer surface of a wide-gap semiconductor device is coated with a synthetic polymer compound containing one or more silicon-containing polymer having a bridged structure formed by a siloxane (Si—O—Si bond structure). The synthetic polymer compound may include, for example, a silicon-containing polymer which has one or more reactive groups (A′) selected from Si—R1, Si—O—R2 and Si—R3—OCOC(R4)═CH2, has a bridged structure formed by an Si—O—Si bond in one or more locations, and contains components having weight average molecular weights of not more than 1000 in an amount of 20% or less by weight.
摘要翻译：宽间隙半导体器件的外表面涂覆有含有一种或多种具有由硅氧烷（Si-O-Si键结构）形成的桥连结构的含硅聚合物的合成高分子化合物。合成高分子化合物可以包括例如具有选自Si-R1，Si-O-R2和Si-R3-OCOC（R4）= CH2中的一个或多个反应性基团（A'）的含硅聚合物，具有在一个或多个位置由Si-O-Si键形成的桥连结构，并且包含重量平均分子量为不超过20％或更少的重量的组分。

42. 发明授权

US07544970B2 Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device 失效
公开(公告)号：US07544970B2
公开(公告)日：2009-06-09
申请号：US10530883
申请日：2004-08-19
申请人： Yoshitaka Sugawara
发明人： Yoshitaka Sugawara
IPC分类号： H01L27/082
CPC分类号： H01L29/8613 , H01L23/045 , H01L23/34 , H01L23/345 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L29/0619 , H01L29/1608 , H01L29/2003 , H01L29/744 , H01L2224/04042 , H01L2224/05556 , H01L2224/05599 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/4823 , H01L2224/48465 , H01L2224/48599 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/73265 , H01L2224/85399 , H01L2224/8592 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01031 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/10157 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12043 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/15312 , H01L2924/16152 , H01L2924/181 , H01L2924/19107 , H01L2924/20758 , H01L2924/3025 , H01L2924/00 , H01L2924/00012
摘要： The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperature is set at a temperature higher than the temperature at which the decrement of the steady loss of the wide-gap bipolar semiconductor element corresponding to the decrement of the built-in voltage lowering depending on the temperature rising of the wide-gap bipolar semiconductor element is larger than the increment of the steady loss corresponding to the increment of the ON resistance increasing depending on the temperature rising.

43. 发明申请

US20080042142A1 Highly Heat-Resistant Synthetic Polymer Compound and High Withstand Voltage Semiconductor Device 审中-公开
标题翻译：高耐热合成高分子化合物和高耐压半导体器件
公开(公告)号：US20080042142A1
公开(公告)日：2008-02-21
申请号：US11795086
申请日：2006-01-25
申请人： Yoshitaka Sugawara , Yoshikazu Shoji
发明人： Yoshitaka Sugawara , Yoshikazu Shoji
IPC分类号： C08G77/44 , C08L83/10 , H01L23/29 , H01L23/31 , H01L29/744 , H01L29/861 , H01L31/12 , H01L33/00
CPC分类号： H01L23/3135 , C08G77/04 , C08G77/44 , H01L23/04 , H01L23/045 , H01L23/24 , H01L23/3121 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/074 , H01L25/167 , H01L31/0203 , H01L33/56 , H01L2224/04042 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/4823 , H01L2224/48465 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12036 , H01L2924/12043 , H01L2924/12044 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/16152 , H01L2924/00014 , H01L2924/00 , H01L2924/20758
摘要： The outer surface of a wide-gap semiconductor device is covered with a synthetic polymer compound. The synthetic polymer compound is formed by linking a plurality of third organosilicon polymers through covalent bonding which is formed by addition reaction, and has a three-dimensional steric structure. The third organosilicon polymers are obtained by liking one or more kinds of first organosilicon polymers having a bridge structure formed by siloxane bonds (Si—O—Si bonds) with one or more kinds of second organosilicon polymers having a linear structure formed by siloxane bonds. Insulating ceramic fine particles having high heat conductivity are preferably mixed with the synthetic polymer compound.
摘要翻译：宽间隙半导体器件的外表面被合成高分子化合物覆盖。合成高分子化合物通过通过加成反应形成的共价键连接多个第三有机硅聚合物而形成，并且具有三维空间结构。第三有机硅聚合物是通过一种或多种具有由硅氧烷键（Si-O-Si键）形成的桥连结构的第一有机硅聚合物与一种或多种具有由硅氧烷键形成的线性结构的第二有机硅聚合物而获得的。具有高导热性的绝缘陶瓷微粒优选与合成高分子化合物混合。

44. 发明授权

US06342709B1 Insulated gate semiconductor device 失效
标题翻译：绝缘栅半导体器件
公开(公告)号：US06342709B1
公开(公告)日：2002-01-29
申请号：US09117997
申请日：1998-08-11
申请人： Yoshitaka Sugawara , Katsunori Asano
发明人： Yoshitaka Sugawara , Katsunori Asano
IPC分类号： H01L3300
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/1095 , H01L29/1608 , H01L29/42368 , H01L29/7397 , H01L29/7809 , H01L29/7813
摘要： In a semiconductor device having a trench type insulated gate structure, in the case where a drift layer 2 of an n− conduction type has a high carrier density, when a high voltage is applied between a drain and a source in such a manner that a channel is not formed, the electric field strength of an insulator layer 9 below the trench type insulated gate is increased, thus causing breakdown. The withstand voltage of the semiconductor device is limited by the breakdown of the insulator layer 9, and it is difficult to realize high withstand voltage. In the characteristic of the present invention, a field relaxation semiconductor region 1 of a conduction type opposite to the conduction type of the drift layer 2 is formed within the drift layer 2 below the insulator layer 9 in the trench of the trench type insulated gate semiconductor device. Also, the thickness of a bottom portion of the insulator layer 9 provided in the trench of the trench type insulated gate semiconductor device is made significantly greater than the thickness of a lateral portion thereof.
摘要翻译：在具有沟槽型绝缘栅极结构的半导体器件中，在n型导电型漂移层2具有高载流子密度的情况下，当在漏极和源极之间施加高电压时，通道不形成，沟槽型绝缘栅下方的绝缘体层9的电场强度增加，从而导致击穿。半导体器件的耐电压受绝缘体层9击穿的限制，难以实现高耐压。在本发明的特征中，与导通相反的导电类型的场弛豫半导体区域1 在沟槽型绝缘栅半导体器件的沟槽中的绝缘体层9下方的漂移层2内形成漂移层2的类型。此外，设置在沟槽型绝缘栅极半导体器件的沟槽中的绝缘体层9的底部的厚度显着大于其侧面部分的厚度。

45. 发明授权

US5463243A Dielectric isolated high voltage semiconductor device 失效
标题翻译：绝缘隔离高压半导体器件
公开(公告)号：US5463243A
公开(公告)日：1995-10-31
申请号：US147314
申请日：1993-11-05
申请人： Naoki Sakurai , Yoshitaka Sugawara
发明人： Naoki Sakurai , Yoshitaka Sugawara
IPC分类号： H01L21/762 , H01L27/06 , H01L29/06 , H01L29/10 , H01L29/40 , H01L29/78 , H01L29/861 , H02P6/08 , H01L27/12
CPC分类号： H01L29/402 , H01L21/76297 , H01L27/0623 , H01L29/0611 , H01L29/1083 , H01L29/7813 , H01L29/7824 , H01L29/8611 , H02P6/085 , H01L2924/0002
摘要： A dielectric isolated high voltage semiconductor device having an arrangement for extending a depletion layer of a main junction beyond an insulating layer containing an island to a semiconductor supporter by applying the same reverse biasing voltage to the supporter and the islands. That is, in the structure, an electrode is provided at the back surface of the supporter and connected to a main electrode of the selected island. The above-mentioned main junction is the pn junction to which the reverse biasing voltage for securing the withstand voltage of the semiconductor device is applied.
摘要翻译：一种电介质隔离型高电压半导体器件，其具有通过向支撑体和岛施加相同的反向偏置电压而将主结的耗尽层延伸超过包含岛的绝缘层至半导体支撑体的布置。也就是说，在该结构中，电极设置在支撑体的后表面并连接到所选择的岛的主电极。上述主结是施加用于确保半导体器件的耐受电压的反向偏置电压的pn结。

46. 发明授权

US4212024A Solid-state switching circuit employing photon coupling suitable for construction in form of integrated circuit 失效
标题翻译：采用光耦合的固态开关电路适用于集成电路形式的结构
公开(公告)号：US4212024A
公开(公告)日：1980-07-08
申请号：US902498
申请日：1978-05-03
申请人： Yoshitaka Sugawara , Tatsuya Kamei
发明人： Yoshitaka Sugawara , Tatsuya Kamei
IPC分类号： H02H7/12 , H01L31/167 , H02M1/08 , H02M1/32 , H01L29/74
CPC分类号： H01L31/167
摘要： A solid-state switching circuit employing photon coupling, which is controlled by a control signal, comprises a control portion which includes at least one light-emitting diode and a load current carrying portion which is formed on a di-electric isolated substrate. The load current carrying portion has a light-activated silicon controlled rectifier, the switching operation of which is controlled by photons emitted from the light-emitting diode. A transistor and a resistor are connected between the gate terminal and the cathode terminal of the light-activated silicon controlled rectifier in parallel to each other. Between the base and the emitter electrodes of the transistor, a photodiode is connected, and between the electrode connected to the n-base layer and the gate electrode of the light-activated silicon controlled rectifier, a diode is connected. And the photodiode is also activated by the photons emitted from the light-emitting diode.
摘要翻译：使用由控制信号控制的光子耦合的固态开关电路包括控制部分，该控制部分包括形成在二电隔离基板上的至少一个发光二极管和负载电流承载部分。负载电流承载部分具有光激活的可控硅整流器，其开关操作由从发光二极管发射的光子控制。晶体管和电阻器彼此平行地连接在光激活的可控硅整流器的栅极端子和阴极端子之间。在晶体管的基极和发射极之间连接有光电二极管，并且连接到n基极的电极和光激活的可控硅整流器的栅电极之间连接二极管。并且光电二极管也被从发光二极管发射的光子激活。

47. 发明授权

US4122479A Optoelectronic device having control circuit for light emitting element and circuit for light receiving element integrated in a semiconductor body 失效
标题翻译：具有用于发光元件的控制电路和集成在半导体本体中的用于光接收元件的电路的光电子器件
公开(公告)号：US4122479A
公开(公告)日：1978-10-24
申请号：US737267
申请日：1976-11-01
申请人： Yoshitaka Sugawara , Tatsuya Kamei
发明人： Yoshitaka Sugawara , Tatsuya Kamei
IPC分类号： H01L31/167 , H01L31/12
CPC分类号： H01L31/167 , H01L2224/16145 , H01L2224/16225 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265
摘要： An optoelectronic device comprises a light emitting element having a source from which a light signal is emitted, a semiconductor body having a light receiving element, a control circuit for the emitting element, and a circuit for the receiving element which are integrated in the semiconductor body. The light emitting element is electrically connected to the control circuit and optically coupled to the receiving element through a transparent medium for the light signal. The optoelectronic device has an increased integration density and photocoupling efficiency.
摘要翻译：光电子器件包括发光元件，发光元件的源极，具有光接收元件的半导体本体，用于发光元件的控制电路和集成在半导体本体中的接收元件电路。发光元件电连接到控制电路，并通过用于光信号的透明介质光耦合到接收元件。光电子器件具有增加的集成密度和光耦合效率。

48. 发明授权

US08896084B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08896084B2
公开(公告)日：2014-11-25
申请号：US13578434
申请日：2011-02-23
申请人： Yoshitaka Sugawara
发明人： Yoshitaka Sugawara
IPC分类号： H01L29/47 , H01L29/06 , H01L29/872 , H01L29/861 , H01L29/20 , H01L29/16
CPC分类号： H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/8611 , H01L29/872
摘要： A semiconductor device includes a first semiconductor region of a first conductivity type and formed of a material having a band gap wider than that of silicon; a first layer selectively disposed on a surface of and forming a first junction with the first semiconductor region; a second layer selectively disposed on the first semiconductor region and forming a second junction with the first semiconductor region; a first diode formed by a region including the first junction; a second diode formed by a region including the second junction; and a fourth semiconductor region of a second conductivity type and disposed in the first semiconductor region, between and contacting the first and second junctions. A recess and elevated portion are disposed on the first semiconductor region. The first and the second junctions are formed at different depths. The second diode has a lower built-in potential than the first diode.
摘要翻译：半导体器件包括第一导电类型的第一半导体区域，并且由具有比硅的带隙宽的带隙的材料形成; 选择性地设置在与所述第一半导体区域形成第一结的表面上的第一层; 选择性地设置在所述第一半导体区域上并与所述第一半导体区域形成第二结的第二层; 由包括第一结的区域形成的第一二极管; 由包括所述第二结的区域形成的第二二极管; 以及第二导电类型的第四半导体区域，并且设置在第一半导体区域中，并且与第一和第二结点接触。凹部和升高部分设置在第一半导体区域上。第一和第二接头形成在不同的深度。第二个二极管的内置电位低于第一个二极管。

49. 发明申请

US20100182813A1 PN DIODE, ELECTRIC CIRCUIT DEVICE AND POWER CONVERSION DEVICE 审中-公开
标题翻译： PN二极管，电路设备和电源转换器件
公开(公告)号：US20100182813A1
公开(公告)日：2010-07-22
申请号：US12665482
申请日：2008-06-17
申请人： Katsunori Asano , Yoshitaka Sugawara , Atsushi Tanaka
发明人： Katsunori Asano , Yoshitaka Sugawara , Atsushi Tanaka
IPC分类号： H02M7/06 , H01L29/20 , H01L29/24 , H01L29/16 , H01L21/26 , H02M7/12
CPC分类号： H01L27/0814 , H01L21/8213 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/32 , H01L29/861 , H02M1/34 , H02M7/003 , Y02B70/1483
摘要： In a SiC pn diode, the lifetime is controlled by electron beam irradiation of about 3×1013 cm−2 or more. As a result of the life time control, as shown by a current-voltage characteristic (K10) in FIG. 1, the current started to flow at about 32 V and the on-voltage at an applied current of 100 A was 50 V in the SiC pn diode. In this case, the SiC pn diode has a resistance of 0.5Ω when the SiC pn diode is turned on. The conducting region of the SiC pn diode is 0.4 cm2, and is reduced to 0.2 Ωcm2 by increasing the on-resistance by the lifetime control. Therefore, for instance, in an electric circuit device using a diode and a resistor connected in series in prior arts, the resistor can be eliminated.
摘要翻译：在SiC pn二极管中，寿命由大约3×1013 cm -2以上的电子束照射控制。作为寿命控制的结果，如图1中的电流 - 电压特性（K10）所示。如图1所示，电流在大约32V开始流动，并且在SiC pn二极管中在100A的施加电流下的导通电压为50V。在这种情况下，SiC pn二极管的电阻为0.5＆OHgr; 当SiC pn二极管导通时。 SiC pn二极管的导电区域为0.4平方厘米，通过寿命控制增加导通电阻，将其减小到0.2和OHgr。因此，例如，在现有技术中使用二极管和电阻串联连接的电路装置中，可以消除电阻。

50. 发明申请

US20100179283A1 SILICON-CONTAINING COMPOUND, CURABLE COMPOSITION AND CURED PRODUCT 失效
标题翻译：含硅化合物，可固化组合物和固化产品
公开(公告)号：US20100179283A1
公开(公告)日：2010-07-15
申请号：US12596933
申请日：2008-04-21
申请人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Seiichi Saito , Yoshitaka Sugawara
发明人： Takashi Sueyoshi , Ken-ichiro Hiwatari , Tadashi Janado , Yoshikazu Shoji , Seiichi Saito , Yoshitaka Sugawara
IPC分类号： C08L83/00 , C07F7/02 , C08G77/12
CPC分类号： C08G77/50 , C08L83/14 , C08L83/00
摘要： A silicon-containing compound of formula (1), and a curing composition containing a silicon-containing compound of formula (1) wherein Z is hydrogen, a silicon-containing compound of formula (1) wherein Z is C2-C4 alkenyl or alkynyl and a hydrosilylation catalyst. The composition has excellent handling and curing properties and provides a cured product with excellent heat resistance and flexibility. In formula (1), Ra—Rg=C1-C12 saturated aliphatic hydrocarbon group or C6-C12 aromatic hydrocarbon group. Re and Rf do not simultaneously represent C1-C12 saturated aliphatic hydrocarbon group; Y═C2-C4 alkylene; Z=hydrogen or C2-C4 alkenyl or alkynyl; K is 2-7; T is 1-7; P is 0-3; and M and N are numbers selected such that N:M=1:1 to 1:100, that all M's and N's total at least 15, and that the mass average molecular weight of the compound of formula (1) is 3,000 to 1,000,000.
摘要翻译：一种式（1）的含硅化合物和含有其中Z是氢的式（1）的含硅化合物的固化组合物，其中Z是C 2 -C 4烯基或炔基的式（1）的含硅化合物和氢化硅烷化催化剂。该组合物具有优异的处理和固化性能，并提供具有优异的耐热性和柔韧性的固化产物。在式（1）中，Ra-Rg = C1-C12饱和脂族烃基或C6-C12芳族烃基。 Re和Rf不同时代表C1-C12饱和脂族烃基; Y = C 2 -C 4亚烷基; Z =氢或C 2 -C 4烯基或炔基; K为2-7; T为1-7; P为0-3; 并且M和N是选择为N:M = 1:1至1:100的数字，所有M和N的总数至少为15，并且式（1）化合物的质均分子量为3,000至1,000,000 。

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