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    • 45. 发明申请
    • Light Emitting Device and Method for Manufacturing Thereof
    • 发光装置及其制造方法
    • US20120256227A1
    • 2012-10-11
    • US13439298
    • 2012-04-04
    • Takuya TsurumeHisao Ikeda
    • Takuya TsurumeHisao Ikeda
    • H01L51/52H01L51/56
    • H01L51/5228H01L2251/5315
    • A conductive layer serving as an auxiliary wiring is formed under a first electrode with a first insulating layer interposed therebetween, and the conductive layer and a second electrode are electrically connected to each other through an opening in the first insulating layer and the first electrode. A second insulating layer is formed over a sidewall of the opening so that the first electrode is not directly in contact with the second electrode in the opening. An EL layer is formed by evaporation in a state where a deposition target substrate is inclined to an evaporation source, so that the second insulating layer serves as an obstacle and a region where the EL layer is not formed by the evaporation and the conductive layer is exposed is formed in part of the opening in a self-aligned manner.
    • 用作辅助布线的导电层形成在第一电极之下,其间介于第一绝缘层之间,并且导电层和第二电极通过第一绝缘层和第一电极中的开口彼此电连接。 在开口的侧壁上形成第二绝缘层,使得第一电极不直接与开口中的第二电极接触。 在沉积靶基板倾斜于蒸发源的状态下通过蒸发形成EL层,从而第二绝缘层用作障碍物,并且通过蒸发不形成EL层并且导电层为 以自对准的方式暴露在开口的一部分中。
    • 49. 发明授权
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US07820495B2
    • 2010-10-26
    • US11448053
    • 2006-06-07
    • Koji DairikiNaoto KusumotoTakuya Tsurume
    • Koji DairikiNaoto KusumotoTakuya Tsurume
    • H01L21/00H01L21/30
    • H01L27/1266H01L27/1285H01L27/1292
    • An object is to provide a method for manufacturing a semiconductor device which suppresses an influence on a semiconductor element due to entry of an impurity element, moisture, or the like from outside even in the case of thinning or removing a substrate after forming a semiconductor element over the substrate. A feature is to form an insulating film functioning as a protective film on at least one side of the substrate by performing surface treatment on the substrate, to form a semiconductor element such as a thin film transistor over the insulating film, and to thin the substrate. As the surface treatment, addition of an impurity element or plasma treatment is performed on the substrate. As a means for thinning the substrate, the substrate can be partially removed by performing grinding treatment, polishing treatment, or the like on the other side of the substrate.
    • 本发明的目的是提供一种用于制造半导体器件的方法,其中,即使在形成半导体元件之后减薄或去除衬底的情况下,也可以抑制由于杂质元素,水分等的进入而对半导体元件的影响 在基板上。 特征在于,在基板的至少一面上形成作为保护膜的绝缘膜,在基板上进行表面处理,在绝缘膜上形成薄膜晶体管等半导体元件,并使基板 。 作为表面处理,在基板上进行杂质元素或等离子体处理的添加。 作为使基板变薄的方法,可以在基板的另一侧进行研磨处理,研磨处理等来部分除去基板。