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    • 42. 发明授权
    • Image forming apparatus
    • 图像形成装置
    • US06809834B1
    • 2004-10-26
    • US09327507
    • 1999-06-08
    • Masaki Sato
    • Masaki Sato
    • G06F1500
    • H04N1/32358H04N1/3247H04N1/3877H04N2201/0093H04N2201/3287
    • An image forming apparatus includes an image forming section, a page memory for storing at least one page of image data to be transferred to the image forming section, and a DMA (Direct Memory Access) controller. The page memory is implemented by a DRAM (Dynamic Random Access Memory). The DMA controller continuously transfers, in response to a single DMA request received from the image forming section, a plurality of words of image data with the same row address from the DRAM to the image forming section at a time by DMA transfer. The apparatus is capable of transferring image data from the DRAM to the image forming section at a high speed by DMA transfer. This is also true when the image data are rotated by 90 degrees or 270 degrees. Further, the apparatus is capable of accurately setting a position where the image forming section starts recording image data on a line.
    • 图像形成装置包括图像形成部分,用于存储要传送到图像形成部分的图像数据的至少一页的页面存储器和DMA(直接存储器存取)控制器)。 页面存储器由DRAM(动态随机存取存储器)实现。 DMA控制器响应于从图像形成部分接收的单个DMA请求,通过DMA传输一次连续地传送具有相同行地址的多个字从DRAM到图像形成部分。 该装置能够通过DMA传输以高速将图像数据从DRAM传送到图像形成部分。 当图像数据旋转90度或270度时也是如此。 此外,该装置能够精确地设置图像形成部分开始在一行上记录图像数据的位置。
    • 46. 发明授权
    • CATV-LAN system having simple modem configuration and providing high
efficiency of transmission
    • CATV-LAN系统具有简单的调制解调器配置并提供高效率的传输
    • US5761603A
    • 1998-06-02
    • US535675
    • 1995-09-28
    • Shinji NojimaShugo HorikamiMasaki SatoHiroshi Nishikawa
    • Shinji NojimaShugo HorikamiMasaki SatoHiroshi Nishikawa
    • H04N7/18H04L12/28H04L12/40H04N7/173H04N1/00H04N7/14
    • H04L12/2801H04N7/17309
    • In a CATV-LAN in which a plurality of modems transmit messages asynchronously from respective terminal apparatuses to an upstream transmission path and receives messages from a downstream transmission path, when a modem is transmitting a message, the resultant data which are received by that modem are compared with data of that message which have already been transmitted, and transmission is interrupted if the received data do not correctly match the transmitted data, due to conflict with data transmitted by some other modem. Each message contains information specifying its length, and when a non-transmitting modem receives a set of data whose actual length does not match a length value which is specified within the data, the data are discarded. It thereby becomes unnecessary to provide beat detection circuits in the modems, for detecting data conflict, so that system cost can be reduced.
    • 在其中多个调制解调器从各个终端装置异步发送消息到上游传输路径并且从下游传输路径接收消息的CATV-LAN中,当调制解调器正在发送消息时,由该调制解调器接收的结果数据是 与已经发送的消息的数据进行比较,并且如果由于与某些其他调制解调器发送的数据的冲突,如果接收到的数据不能正确匹配发送的数据,则传输被中断。 每个消息包含指定其长度的信息,并且当非发送调制解调器接收到其实际长度与数据中指定的长度值不匹配的数据集合时,数据被丢弃。 因此,不需要在调制解调器中提供差拍检测电路,用于检测数据冲突,从而可以降低系统成本。
    • 47. 发明授权
    • Method of manufacturing solid oxide fuel cell
    • 固体氧化物燃料电池的制造方法
    • US5429644A
    • 1995-07-04
    • US285979
    • 1994-08-04
    • Toshio AraiMasaki SatoTakayoshi YoshimuraMinoru Tamura
    • Toshio AraiMasaki SatoTakayoshi YoshimuraMinoru Tamura
    • H01M8/02H01M8/12H01M8/24H01M8/00
    • H01M8/2425H01M2300/0077Y02P70/56Y10T29/49114
    • A dense substrate for a solid oxide fuel cell, comprising: a base portion, support portions and fixing portions all of which project from the base portion so as to be arranged sequentially in one direction; grooves formed between the support portions and the fixing portions or between the support portions; and mount portions which are provided on the support portions between the fixing portions for mounting and affixing at least cell sections thereon. A solid oxide fuel cell is easily manufactured at a reduced cost by arranging a plurality of cell sections and, if required, plate sections, on the mount portions of the above dense substrate; affixing the cell sections and, when used, plate sections, onto the mount portions with an insulating bonding agent; and joining adjacent cell sections together with interconnections.
    • 一种用于固体氧化物燃料电池的致密基底,包括:基部,支撑部分和固定部分,其全部从基部突出以沿一个方向依次布置; 在支撑部分和固定部分之间或支撑​​部分之间形成的凹槽; 以及安装部分,其设置在固定部分之间的支撑部分上,用于至少安装和固定其上的细胞部分。 固体氧化物型燃料电池容易通过在上述致密基板的安装部分上设置多个电池部分和需要时的板部分而以较低的成本制造。 使用绝缘粘合剂将电池部分和使用时将板部分固定到安装部分上; 并且连接相邻的单元部分和互连。
    • 48. 发明授权
    • Nonvolatile semiconductor memory
    • 非易失性半导体存储器
    • US4825271A
    • 1989-04-25
    • US50316
    • 1987-05-15
    • Sumio TanakaMasaki SatoShinji SaitoShigeru AtsumiNobuaki Ohtsuka
    • Sumio TanakaMasaki SatoShinji SaitoShigeru AtsumiNobuaki Ohtsuka
    • H01L27/115H01L29/78H01L27/20H01L29/34
    • H01L27/115Y10S257/915
    • Disclosed is a nonvolatile semiconductor memory having a high access speed and high reliability. The memory includes a source diffusion region extending in one direction, a pair of first word lines arranged in parallel with the source diffusion region, such that the source diffusion region is interposed therebetween, drain diffusion regions disposed to face the source diffusion region, with the first word lines interposed therebetween, bit lines electrically connected to the drain diffusion regions and arranged to cross the first word lines, a channel region formed below each of the first word lines and positioned between the source diffusion region and the drain diffusion region, a floating gate electrode formed in an electrically floating manner above the channel region and below one of the pair of the first word lines, and a second word line formed above the source region and positioned between and electrically connected to the pair of first word lines.
    • 公开了具有高访问速度和高可靠性的非易失性半导体存储器。 存储器包括沿一个方向延伸的源极扩散区域,与源极扩散区域平行布置的一对第一字线,使得源极扩散区域介于其间,设置成面对源极扩散区域的漏极扩散区域, 插入其间的第一字线,与漏极扩散区域电连接且布置成跨越第一字线的位线,形成在每个第一字线下方并位于源极扩散区域和漏极扩散区域之间的沟道区域,浮置 栅极电极以电浮置方式形成在沟道区域上方并且位于该对第一字线中的一个之上,以及第二字线,形成在源极区域之上并且位于第一字线对之间并电连接到该第一字线对之间。
    • 49. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US4640000A
    • 1987-02-03
    • US686375
    • 1984-12-26
    • Masaki Sato
    • Masaki Sato
    • H01L29/78H01L21/336H01L21/768H01L21/443
    • H01L29/6659H01L21/76877
    • A semiconductor device is fabricated by forming a gate structure including a gate insulating film and a gate electrode film formed thereon on a surface of an element formation region defined in a surface of a semiconductor substrate by an element isolation region. Then, an impurity having a conductivity type opposite to that of the substrate is doped by using the gate structure as a mask, thereby forming first and second semiconductor regions in the element formation region. An insulating wall is formed on a side wall of the gate structure, and an insulating film is deposited on an entire surface of the resultant semiconductor substrate structure. A portion of the insulating film which corresponds to a step portion formed by surfaces of the wall and the element formation region is selectively etched to form first and second contact holes. Finally, a wiring layer is formed on the remaining insulating film so as to electrically connect to the first and second semiconductor regions through the first and second contact holes.
    • 通过在元件隔离区域上形成在半导体衬底的表面中限定的元件形成区域的表面上形成包括栅极绝缘膜和形成在其上的栅电极膜的栅极结构来制造半导体器件。 然后,通过使用栅极结构作为掩模来掺杂具有与衬底的导电类型相反的导电类型的杂质,从而在元件形成区域中形成第一和第二半导体区域。 在栅极结构的侧壁上形成绝缘壁,并且在所得半导体衬底结构的整个表面上沉积绝缘膜。 选择性地蚀刻绝缘膜的对应于由壁和元件形成区域的表面形成的台阶部分的部分以形成第一和第二接触孔。 最后,在剩余的绝缘膜上形成布线层,以便通过第一和第二接触孔电连接到第一和第二半导体区域。